For Crystallization From Liquid Or Supercritical State Patents (Class 117/206)
  • Patent number: 10450669
    Abstract: A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SixNyOz, 1?x?2, 1?y?2, and 0.1?z?1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: October 22, 2019
    Assignee: AUO Crystal Corporation
    Inventors: Chang-Ho Yu, Yen-Ming Chen
  • Patent number: 10258990
    Abstract: An imaging plate includes a plurality of wells individually accommodating little fishes, and the little fishes inside the wells are imaged from bottom portions of the wells. In order to adjust imaging posture or imaging positions of the little fishes inside the wells, an imaging little fish management device includes a water unit which supplies and discharges water into and from each well of the imaging plate. The water inside each well flows through a discharge hole provided laterally at a lowermost portion of each well. The water unit is also used to breed the little fishes of the wells of the imaging plate.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: April 16, 2019
    Assignee: NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY
    Inventors: Toshio Tanaka, Yasuhito Shimada, Noriko Umemoto, Masaru Obata, Masatoshi Hashimoto
  • Patent number: 10233561
    Abstract: An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: March 19, 2019
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Geun-Woo Lee, Soo Heyong Lee
  • Patent number: 10145022
    Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: December 4, 2018
    Assignees: Osaka University, Panasonic Corporation
    Inventors: Yusuke Mori, Mamoru Imade, Shinsuke Komatsu, Michirou Yoshino
  • Patent number: 9945046
    Abstract: The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.
    Type: Grant
    Filed: September 3, 2012
    Date of Patent: April 17, 2018
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Fabrice Coustier, Denis Camel, Anis Jouini, Etienne Pihan
  • Patent number: 9895669
    Abstract: A mixing assembly includes an inlet, an outlet and a mixing chamber, the inlet is fluidly connected to the outlet through a plurality of micro fluid flow paths in a direction perpendicular from the inlet. The micro fluid flow paths fluidly connect to the perpendicular inlet via a curved transition portion. The curved transition portion provides a more efficient flow path for the fluid to travel from the inlet to the micro fluid flow paths to the mixing chamber. By transitioning the direction change, flow resistance is decreased, and the fluid flow rate and shear rate is increased. Increased fluid flow rate and shear rate helps to increase consistency and quality of mixing, and to reduce particle size of the fluid in the mixing chamber.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: February 20, 2018
    Assignee: MICROFLUIDICS INTERNATIONAL CORPORATION
    Inventors: Renqiang Xiong, John Michael Bernard
  • Patent number: 9731289
    Abstract: The present invention relates to the automation of incubation, processing, harvesting and analysis of samples in a multi-cell plate. In particular, a multi-cell plate including a body with a plurality of cells is presented. Furthermore, an automated crystal harvesting and processing system with a cutting unit, a fluid unit and a removing device is presented. The multi-cell plate further includes a sealing film for sealing the cells on a first side of the body and a sample film for sealing the cells on a second side of the body. The sample film is adapted for accommodating a biological material for crystallization. Furthermore, the sample film is of a thickness and composition that makes it compatible with x-rays and also with laser ablation. The design of the multi-cell plate and the automated crystal harvesting and processing system allows for several steps of incubation, processing, harvesting and analysis of the samples to be automated.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: August 15, 2017
    Assignee: EUROPEAN MOLECULAR BIOLOGY LABORATORY
    Inventors: Florent Cipriani, Jose Antonio Marquez
  • Patent number: 9388507
    Abstract: A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm?X<30 mm), a second zone from X to Y in height (30 mm?Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h?V1?20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h?V2?5 mm/h.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: July 12, 2016
    Assignees: MITSUBISHI MATERIALS CORPORATION, MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.
    Inventors: Koji Tsuzukihashi, Hiroshi Ikeda, Masahiro Kanai, Saburo Wakita
  • Patent number: 9194903
    Abstract: An apparatus for measuring a surface potential of an object on an underlying structure is disclosed. A relatively-moving mechanism moves a probe and a second support member relative to each other until the probe faces a reference structure on the second support member, an electric potential measuring device measures the surface potential of the reference structure through the probe, the controller calibrates the electric potential measuring device such that a measured value of the surface potential of the reference structure becomes 0, the relatively-moving mechanism moves the probe and a first support member relative to each other until the probe faces the object on the first support member after the calibration, and the electric potential measuring device measures the surface potential of the object through the probe.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: November 24, 2015
    Assignee: Ebara Corporation
    Inventor: Tomoatsu Ishibashi
  • Patent number: 9192910
    Abstract: To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: November 24, 2015
    Assignees: Mitsubishi Chemical Corporation, Tohoku University
    Inventors: Yutaka Mikawa, Makiko Kiyomi, Yuji Kagamitani, Toru Ishiguro
  • Patent number: 9187843
    Abstract: A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.
    Type: Grant
    Filed: July 23, 2010
    Date of Patent: November 17, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Takashi Sakurada, Tomohiro Kawase
  • Patent number: 9174210
    Abstract: A self-contained apparatus for isolating nucleic acid, cell lysates and cell suspensions from unprocessed samples apparatus, to be used with an instrument, includes at least one input, and: (i) a macrofluidic component, including a chamber for receiving an unprocessed sample from a collection device and at least one filled liquid purification reagent storage reservoir; and (ii) a microfluidic component in communication with the macrofluidic component through at least one microfluidic element, the microfluidic component further comprising at least one nucleic acid purification matrix; and (iii) at least one interface port to a drive mechanism on the instrument for driving said liquid purification reagent, through the microfluidic element and the nucleic acid purification matrix, wherein the only inputs to the apparatus are through the chamber and the interface port to the drive mechanism.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: November 3, 2015
    Assignee: NetBio, Inc.
    Inventors: Richard F. Selden, Eugene Tan
  • Patent number: 9170217
    Abstract: A molecular structure determination facility includes a first X-ray source capable of emitting a pulsed coherent X-ray beam along a first emission direction and a plurality of first measurement stations aligned along the first emission direction. Each of the first measurement stations comprises a sample injector device for injecting a sample beam of a liquid into an interaction region, a focusing unit for focusing an X-ray beam, and a detector arranged around and comprising a central opening aligned with the emission direction, and being sensitive to X-rays emerging from the interaction region. A method uses the facility by emitting a coherent X-ray beam pulse using the first X-ray source, triggering the injector devices to inject sample beams of liquid into the interaction regions such that the coherent X-ray pulse intersects the sample beams of liquid in the interaction regions, and detecting X-rays emerging from the interaction regions using the detectors.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: October 27, 2015
    Assignee: Deutsches Elektronen-Synchrotron DESY
    Inventor: Henry N. Chapman
  • Patent number: 9017479
    Abstract: The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: April 28, 2015
    Assignees: NGK Insulators, Ltd., Osaka University, Toyoda Gosei Co., Ltd.
    Inventors: Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Shiro Yamasaki
  • Patent number: 9017478
    Abstract: Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold crucible is melted, a primary extraction apparatus vertically movably installed in the chamber and configured to solidify the molten silicon to extract the silicon ingot, a movable apparatus configured to horizontally move the primary extraction apparatus, and a secondary extraction apparatus vertically movably installed under the chamber and configured to extract the silicon ingot in a state in which the primary extraction apparatus is moved to one side. Therefore, as the height of the extraction apparatus is reduced, manufacturing cost of equipment can be reduced and installation space of the extraction apparatus can also be reduced.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: April 28, 2015
    Assignee: KCC Corporation
    Inventors: Ki Hyun Chang, Dong Hyun Nam
  • Patent number: 8986447
    Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: March 24, 2015
    Assignee: Soraa, Inc.
    Inventor: Mark P. D'Evelyn
  • Patent number: 8968471
    Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: March 3, 2015
    Assignee: Korea Institute of Energy Research
    Inventors: Bo-Yun Jang, Jin-Seok Lee, Joon-Soo Kim
  • Patent number: 8956455
    Abstract: A seed crystal holder for growing single crystals, such as for use in scintillation detectors for nuclear medicine. The holder includes a cooling shaft, a fastener attached to the cooling shaft, and a gasket for separating the cooling shaft from the seed crystal. The gasket is made of a heat-transferable material such as steel wool or metallic foil to conduct heat from the seed crystal to the cooling shaft, while also providing a cushioning effect to cushion the seed crystal against potentially damaging motion forces.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: February 17, 2015
    Assignee: Siemens Medical Solutions USA, Inc.
    Inventors: Olexy V. Radkevich, Volodimir Protsenko
  • Patent number: 8951345
    Abstract: This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: February 10, 2015
    Assignee: AMG Idealcast Solar Corporation
    Inventors: Roger F. Clark, James A. Cliber, Nathan G. Stoddard, Jesse I. Gerber, Raymond J. Roberts, Mark A. Wilmerton
  • Patent number: 8940095
    Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: January 27, 2015
    Assignee: Rensselaer Polytechnic Institute
    Inventor: Partha Dutta
  • Publication number: 20150020730
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 22, 2015
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
  • Patent number: 8936679
    Abstract: According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: January 20, 2015
    Assignee: Globalwafers Japan Co., Ltd
    Inventors: Hironori Banba, Hiromichi Isogai, Yoshiaki Abe, Takashi Ishikawa, Shingo Narimatsu, Jun Nakao, Hiroyuki Abiko, Michihiro Ohwa
  • Patent number: 8936684
    Abstract: The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: January 20, 2015
    Assignee: Japan Super Quartz Corporation
    Inventors: Toshiaki Sudo, Hiroshi Kishi, Ken Kitahara
  • Publication number: 20150013590
    Abstract: The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft.
    Type: Application
    Filed: December 27, 2012
    Publication date: January 15, 2015
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Motohisa Kado, Kazuhiko Kusunoki
  • Patent number: 8920561
    Abstract: A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces.
    Type: Grant
    Filed: July 28, 2009
    Date of Patent: December 30, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Yasuhito Narushima, Shinichi Kawazoe, Fukuo Ogawa, Toshimichi Kubota, Tomohiro Fukuda
  • Patent number: 8900981
    Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: December 2, 2014
    Assignees: Apollon Solar, Siltronix
    Inventors: Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray
  • Patent number: 8888911
    Abstract: The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: November 18, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Masayuki Uto, Tuneaki Tomonaga, Toshimichi Kubota, Fukuo Ogawa, Yasuhito Narushima
  • Patent number: 8888912
    Abstract: In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: November 18, 2014
    Assignee: Ricoh Company, Ltd.
    Inventors: Seiji Sarayama, Hirokazu Iwata, Akihiro Fuse
  • Patent number: 8882912
    Abstract: Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: November 11, 2014
    Assignee: Silicor Materials Inc.
    Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Dieter Linke, Jean Patrice Rakotoniana, Kamel Ounadjela
  • Patent number: 8871026
    Abstract: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 ?m, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: October 28, 2014
    Assignee: Japan Super Quartz Corporation
    Inventor: Hiroshi Kishi
  • Patent number: 8864908
    Abstract: A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly. In a crucible having an inner crucible 2 and an outer crucible 3, the crucible protection sheet is arranged between the two crucibles and is made of expanded graphite. The planar thermal conductivity is 120 W/(m·K) or higher, the gas permeability is less than 1.0×10?4 cm2/s, and the compression ratio is 20% or higher when the sheet is compressed in a thickness direction at a pressure of 34.3 MPa. Since the compression ratio is high, the effect of preventing breakage is great when inserting the inner crucible, improving workability and preventing the inner crucible from tilting inside the outer crucible.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: October 21, 2014
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Yoshiaki Hirose, Tetsuya Yuki
  • Publication number: 20140305367
    Abstract: The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.
    Type: Application
    Filed: April 8, 2014
    Publication date: October 16, 2014
    Applicant: KLA-Tencor Corporation
    Inventors: Yung-Ho Alex Chuang, Vladimir Dribinski
  • Publication number: 20140261157
    Abstract: A method for producing a group 13 nitride crystal, comprises a crystal growth step of reacting nitrogen and a mixed melt containing at least a group 13 metal and at least one of an alkali metal and an alkaline earth metal, in the mixed melt, to grow a nitride crystal on a seed crystal, wherein at least one of the mixed melt and the seed crystal is rotated in the crystal growth step, a relative speed between the mixed melt and the seed crystal in the crystal growth step is repeatedly fluctuated in accordance with one or a plurality of types of predetermined patterns, and a maximum value of the relative speed indicated by the pattern is 0.01 m/s or more.
    Type: Application
    Filed: March 4, 2014
    Publication date: September 18, 2014
    Applicant: RICOH COMPANY, LTD.
    Inventors: Takashi Satoh, Seiji Sarayama, Masahiro Hayashi, Naoya Miyoshi
  • Patent number: 8821634
    Abstract: A high temperature furnace comprising hot zone insulation having at least one shaped thermocouple assembly port to reduce temperature measurement variability is disclosed. The shaped thermocouple assembly port has an opening in the insulation facing the hot zone that is larger than the opening on the furnace shell side of the insulation. A method for producing a crystalline ingot in a high temperature furnace utilizing insulation having a shaped thermocouple assembly port is also disclosed.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: September 2, 2014
    Assignee: GTAT Corporation
    Inventors: Ning Duanmu, Dean C. Skelton, Menahem Lowy, Dzung Duc Nguyen
  • Patent number: 8795432
    Abstract: An apparatus for pulling a silicon single crystal, comprising: a crucible that stores a silicon melt; a heater that heats the crucible; a crucible driving unit for rotating and/or lifting up and down the crucible; a chamber that holds the crucible and the heater; and a magnetic field applying unit that is provided outside the chamber and applies a magnetic field to the chamber, wherein the magnetic field applying unit is formed along the outer peripheral surface of the chamber such that substantially concentric circle-shaped equi-strength lines of the magnetic field are formed about a center axis of the crucible.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: August 5, 2014
    Assignee: Sumco Corporation
    Inventor: Jun Furukawa
  • Patent number: 8741060
    Abstract: This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: June 3, 2014
    Assignee: AMG IdealCast Solar Corporation
    Inventors: James A. Cliber, Roger F. Clark, Nathan G. Stoddard, Paul Von Dollen
  • Patent number: 8728238
    Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: May 20, 2014
    Assignee: H.C. Materials Corporation
    Inventors: Pengdi Han, Jian Tian
  • Patent number: 8729672
    Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: May 20, 2014
    Assignee: NGK Insulators, Ltd.
    Inventors: Takanao Shimodaira, Takayuki Hirao, Katsuhiro Imai
  • Patent number: 8715416
    Abstract: A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: May 6, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Yasuhito Narushima, Shinichi Kawazoe, Fukuo Ogawa, Toshimichi Kubota
  • Patent number: 8702863
    Abstract: A method for the evaporative production of phenol-BPA adduct crystals in a crystallizer is provided. First, a supersaturated BPA solution is introduced into a crystallizer that includes a cylindrical vessel and a concentrically-disposed draft tube that defines an annular space between the vessel and tube. Next, the BPA solution is circulated through the draft tube and annular space while a coolant is uniformly distributed in the circulating flow by radially injecting a volatile hydrocarbon compound at between about 30% and 60% of a radial extent of the annular space of to form a BPA mixture. Phenol-BPA adduct crystals are produced in the vessel by evaporating the volatile hydrocarbon compound out of the BPA mixture. The method provides a consistent and uniform concentration of coolant across the surface of the boiling zone that prevents or at least reduces unwanted crystal nucleation.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: April 22, 2014
    Assignee: Badger Licensing LLC
    Inventor: Stephen W. Fetsko
  • Patent number: 8691013
    Abstract: A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.
    Type: Grant
    Filed: May 9, 2011
    Date of Patent: April 8, 2014
    Assignee: MEMC Singapore Pte Ltd
    Inventors: Benjamin Michael Meyer, Hariprasad Sreedharamurthy, Steven Lawrence Kimbel
  • Publication number: 20140083352
    Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
    Type: Application
    Filed: November 27, 2013
    Publication date: March 27, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Frederick F. Lange
  • Patent number: 8673075
    Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: March 18, 2014
    Assignees: Sumco Phoenix Corporation, Sumco Corporation
    Inventors: Benno Orschel, Andrzej Buczkowski, Joel Kearns, Keiichi Takanashi, Volker Todt
  • Publication number: 20140069324
    Abstract: A crucible for producing a silicon block comprises a crucible wall surrounding an interior and an opening for filling silicon melt into the interior, wherein the crucible wall comprises at least one doping means for providing dopant for the silicon melt.
    Type: Application
    Filed: September 7, 2012
    Publication date: March 13, 2014
    Inventor: Bjoern SEIPEL
  • Patent number: 8657957
    Abstract: A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: February 25, 2014
    Assignee: Japan Super Quartz Corporation
    Inventors: Hiroshi Kishi, Masanori Fukui, Masaki Morikawa
  • Patent number: 8652257
    Abstract: A melting furnace, mounted adjacent a growth furnace, comprises a receiving container for melting therein raw material in a particle or powder form falling in it from a feeder. The receiving container accommodates a set of slope-wise plates providing a distributed sliding of partially melted raw material particles over the surface of these plates and their complete melting while moving downward; eventually the melted raw material flows into the crucible of the growth furnace through a conveying tube extending slantingly from the bottom of the receiving container to the crucible through coaxial openings in housings of both furnaces. The rate of feeding is given solely by the feeder, and at continuous feeding the raw material flows continuously by gravity from the feeder to the crucible of the growth furnace, first in a solid state (powder, granules, pellets, etc.) and then in a liquid state.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: February 18, 2014
    Inventors: Lev George Eidelman, Vladimir Ilya Zheleznyak
  • Patent number: 8652253
    Abstract: An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity. Additionally or alternatively, the arrangement may comprise a device for generating magnetic migration fields, both the filling material having the anisotropic heat conductivity and the device for generating magnetic migration fields being suited to compensate or prevent the formation of asymmetric phase interfaces upon freezing of the raw melt.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: February 18, 2014
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Stefan Eichler, Thomas Bünger, Michael Butter, Rico Rühmann, Max Scheffer-Czygan
  • Patent number: 8647432
    Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: February 11, 2014
    Assignee: GTAT Corporation
    Inventors: Yuepeng Wan, Santhana Raghavan Parthasarathy, Carl Chartier, Adrian Servini, Chandra P Khattak
  • Patent number: 8641821
    Abstract: Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: February 4, 2014
    Assignees: National Institute of Advanced Industrial Science and Technology, Fujikura Ltd.
    Inventors: Tomohisa Katou, Ichirou Nagai, Tomonori Miura, Hiroyuki Kamata
  • Patent number: 8641822
    Abstract: An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed.
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: February 4, 2014
    Assignee: Sumco Phoenix Corporation
    Inventors: Benno Orschel, Joel Kearns, Keiichi Takanashi, Volker Todt