Abstract: In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of the respective measuring lines and the fusion ring, on the opposite sides of the fusion ring, are detected, and the central position of the single crystal is calculated based on the intervals between the intersections on the opposite sides of the fusion ring, whereby the position of the liquid surface of the melt is determined.

Abstract: A single crystal pulling apparatus for a metal fluoride comprising a crucible provided in a chamber for filling with a molten solution of a single crystal material, a melting heater provided to surround the crucible, a vertically movable single crystal pulling bar for attaching a seed crystal on a tip thereof for coming in contact with the molten solution of the single crystal material in the crucible, a heat insulating wall provided in the chamber to surround at least a peripheral side portion of a single crystal pulling region in an upper part of the crucible, a ceiling board for closing an opening portion of an upper end in an upper part of the heat insulating wall, and a single crystal pulling chamber surrounded by the heat insulating wall and the ceiling board, wherein the ceiling board is provided with at least an inserting hole for inserting the single crystal pulling bar, and wherein a coefficient of thermal conductivity in a direction of a thickness of the ceiling board is 1000 to 50000 W/m2·K.

Abstract: In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downward in the vertical charging tube working in such a way that a predetermined amount of the polycrystalline raw material is accumulated in the raw material accumulating section and the polycrystalline raw material in excess of the predetermined amount falls down. The polycrystalline raw material falling down in the vertical charging tube strikes against the accumulated raw material in the raw material accumulating section, thereby absorbing a shock of the falling raw material. The accumulated raw material works simultaneously as a protective member, thereby preventing breakage of the tube accompanying absorption of the shock from occurring.

Abstract: In supplying crystalline materials in the Czochralski method, it is made use of an apparatus equipped with an inner vessel having an opening portion at the lower part or bottom thereof, which is to be charged with a granular solid material, an outer vessel containing the inner vessel therein with the function of sliding movement and thus closing the opening portion, and pull-up means for suspending the inner vessel and outer vessel in a manner causing them to ascend or descend, wherein the opening portion is opened through a sliding motion of the inner vessel or outer vessel for additional charging or recharging of the solid material into the molten material in the crucible, with the result that the molten material in the crucible can be prevented from splashing, the additional charging can be carried out in a static manner, the material cost becomes low and there is no risk of cracking due to rapid heating.

Abstract: In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Abstract: A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidified in batches or sintered before charged in the long crucible to obtain substantially stoichiometric solids. The separation member divides the long crucible into a melting zone and a feeding zone located under the melting zone, and it could effectively prevent bubble formation in the growing crystal. The stoichiometry of the axial and radial composition can be well controlled, and the control of the diameter of the crystal body is easily achieved as well.

Abstract: Additional charge of a solid raw material 13 in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material 14 in a crucible in a static manner without solidifying a surface of the molten raw material 14 in the crucible 3. A bottom of a cylindrical raw material vessel 10 made of a material non-meltable when being in contact with the molten raw material 14 in the crucible 3 is closed with a bottom cover 11 made of a material meltable and removable when being in contact with the molten raw material 14 in the crucible 3. The raw material vessel 10 in a state of being filled with the solid raw material 13 in the shapes of granules/lumps is hung down above the crucible 3 to immerse the lower portion thereof into the molten raw material 14 in the crucible 3.

Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed.

Abstract: A raw material feeder apparatus for industrial crystal growth systems includes a hopper disposed within a vacuum chamber and adapted to hold a quantity of raw material therein. A slide is disposed adjacent to an opening of the hopper and configured to receive the raw material from the hopper thereon. The slide is selectively moved between an open feeding position and a closed non-feeding position. The slide and a door cooperatively close the opening of the hopper, or in their open state, control the flow of raw material from the hopper. A vibrator associated with the slide feeds the raw material from the slide into an outlet tube for conveyance of the raw material to the crystal growth system.

Abstract: Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. Above the initially charged poly-silicon raw material, a heat resistant tubular container is placed. The granules/lumps poly-silicon raw material for use in additional charging is charged inot the tubular container. The poly-silicon raw material initially charged into the crucible is melted. The poly-silicon raw material in the tubular container gradually and spontaneously comes down into the crucible, as the bulk of poly-silicon raw material is decreased according to the melting of the initially charged raw material.

Abstract: An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.

Abstract: A method for doping a melt with a dopant has the melt being provided in a crucible. The dopant is introduced into a vessel and the vessel is immersed in the melt, the dopant being transferred into the melt through an opening which forms in the vessel. There is also an apparatus which comprises a vessel containing the dopant and a device which is connected to the vessel, for lowering the vessel into a melt and for lifting the vessel out of the melt, the vessel being provided with an opening which is blocked by a closure piece which is of the same type of material as the melt and melts when it is brought into contact with the melt.

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract: The present invention aims to prevent solidification of a melt in a feeding pipe without providing heating means such as heater or heat keeping means such as heat insulating material on outer periphery of the feeding pipe when the melt is supplied from an auxiliary crucible into a main crucible via the feeding pipe by overflow. At the center of the auxiliary crucible 1 made of quartz, a pipe 1a for feeding the melt from the auxiliary crucible 1 to the main crucible 11 by overflow is formed. When the raw material in the auxiliary crucible is melted, it is designed in such manner that the raw material is not continuously supplied to the auxiliary crucible but it is supplied in such quantity that the melt overflows intermittently into an opening on the upper end of the pipe 1a from the auxiliary crucible 1 into the main crucible 11.

Abstract: The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity is relatively low, a conductive carbon cylinder 2 is arranged at such a height as to cover the entire side wall of the auxiliary crucible 1, and when high frequency current is applied on a high frequency coil 3, secondary induction current is generated on the carbon cylinder 2. Then, Joule heat is generated on the carbon cylinder 2 by the secondary induction current, and heat of the carbon cylinder 2 is transmitted to the raw material inside via the auxiliary crucible 1. Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base 4 is arranged at such a position as to cover the entire side wall of the auxiliary crucible 1.

Abstract: A crystal pulling unit for the production of a crystal block has a recharging tube (7), via which granulate (17) is introduced into a crucible (2) with a melt (3), located inside a container (1). A fine-dust separator (8) is located in the recharging tube (7) outside the container (1); the separator works like an air classifier and, by means of a protective gas cushion, removes fine dusts from the granulate (17). This counters the danger of clogging of the recharging tube (7) by the caking of the recharging material.

Abstract: The invention features a method of controlling the depth of a melt for or crystal growth. According to the method, an input signal is applied through a crucible and a material disposed within the crucible. An output signal generated in response to the input signal is measured. The output signal relates to the depth of the melt. An amount of the source material introduced into the melt is adjusted to maintain the depth of the melt at a substantially constant level using the output signal.

Abstract: A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of time such that a controlled amount of dopant and, more typically, a substantially constant amount of dopant can be incorporated into the ingot over its length. By controlling the doping level in the ingot, the resistivity profile of the ingot can also be controlled over its length. In order to provide controlled dopant delivery, the dopant delivery system generally includes a vessel defining an internal cavity within which the dopant is disposed and an orifice through which the dopant, typically a molten dopant, is released. The dopant delivery system can also include means for submerging the vessel within the melt such that heat from the melt melts and therefore releases the dopant into the melt.

Abstract: A method of an apparatus for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. After a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.

Abstract: The amount of silicon feed material supplied to a silicon melt furnace in a silicon crystal web growing installation is controlled by providing a melt level reference signal, generating a melt level signal representative of the level of the molten silicon in the silicon melt furnace, and providing a feed rate control signal representative of the difference between the melt level signal and the melt level reference signal. The feed rate control signal is used in a open loop mode to advise an operator of the amount of adjustment needed to correct the melt level; and is used in a closed loop mode to control the feed rate of the silicon feed material to the furnace. The laser beam reflected off the melt surface is passed through a narrow bandpass filter to remove noise due to thermal radiation from the furnace. The melt level signals generated by a position detector are averaged and digitally filtered to eliminate erroneous data caused by mechanical vibrations and other noise sources.

Abstract: the present invention provides an improved method and apparatus for doping silicon and other crystals made by the Czochralski process wherein the surface of the melt is partially enclosed or covered in order to capture the dopant vapors and improve the efficiency with which they are dissolved in the melt. In accordance with the invention the dopant is suspended in a vapor retention vessel such as a quartz bell jar which is suspended above the melt so that the heat from the melt causes the dopant to vaporize. In accordance with the invention, an annular baffle is provided around the mouth of the vessel or the rim of the crucible containing the melt such that the amount of uncovered open area on the surface of the melt is reduced and the dopant vapor is retained in contact with the surface of the melt such that it dissolves more efficiently in the melt.

Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

Abstract: For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid on the surface of the cooling body. The top surface of the seed body (25) is melted, and the ingot is grown on top of it as the cooling body is lowered by relative motion with respect to the crystallization chamber (9, 41) at a rate which is dependent on the supply of additional silicon and the solidification rate. For the purpose of producing large ingots with a coarsely crystalline to monocrystalline structure, a seed body (25) with a crystalline structure selected from the group ranging from coarsely crystalline to monocrystalline is used. Either lump silicon is placed on top of the seed body (25) and melted by induction, or molten silicon is produced in a forehearth (37) and poured onto the seed body (25). The seed body (25) has a thickness of 0.

Abstract: A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the melt without providing additional orifices in the apparatus or by opening the interior of the apparatus to the atmosphere.

Abstract: The process of manufacturing silicon single crystals by the CZ method is significantly improved by the present apparatus wherein raw material (polycrystalline silicon) is automatically loaded into a quartz crucible. After a protection sheet (15) is employed to cover the inner side wall of the container (3), which has an inner diameter smaller than that of the quartz crucible (10), a present amount of polycrystalline silicon (17) is loaded from the loading means (6) into the container (3). The container (3) is then filled with pure water that is thereafter frozen into an ice block (22). Subsequently, the ice block (22) is raised up from the container (3). Thereafter, the protection sheet (15) is removed from the ice block (22) and the ice block (22) is loaded into the quartz crucible (10). The ice block (22) is then caused to melt and the quartz crucible (10) and polycrystalline silicon are caused to dry up. The above operations are performed by the conveying apparatus (1).

Abstract: The invention is to provide a method for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. For example, after a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.

Abstract: A Czochralski crystal growing system includes components for adding dopants to semiconductor materials and for growing single crystals. The components comprise a portion formed of a material that is chemically compatible with the semiconductor material. The portion includes a cavity sized to contain a desired amount of dopant. The cavity protects the dopant from exposure to contaminants, gas flows and heat in crystal growing furnaces. The portion is dipped into a melt to release the dopant. The portion can be a seed crystal which can further be used to grow a single crystal from the melt after doping. The components can include separate first and second portions formed of materials that are chemically compatible with the melt so that the portions can be placed into the melt. At least one of the first and second portions can contain a dopant. The second portion can be a seed crystal for growing a single crystal.

Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

Abstract: A crystal-growing machine (10) includes a furnace chamber (12) and two loading chambers (14 and 16) that permit simultaneous processing operations. At least one of the two loading chambers (14 and 16) includes a lifting mechanism (36) for pulling a crystal (40) from a melt (20) in the furnace chamber (12). A positioning mechanism (60) disengages one of the loading chambers (14 and 16) from the furnace chamber (12) for cooling the crystal (40) in an evacuated environment and engages the other of the loading chambers (14 and 16) for simultaneously recharging the melt (20) or starting growth of another crystal.

Abstract: A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).

Abstract: A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient.

Abstract: A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264<N<0.07P, where P (Torr) is the internal pressure inside said gas tight container.

Abstract: A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.

Abstract: A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.

Abstract: A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.

Abstract: A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

Abstract: A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

Abstract: A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.

Abstract: The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible.

Abstract: A source (1) is equipped with a conveying device (4) for discharging the particles (2, 2a) at adjustable rates per unit time. A crystal (16), formed from doped particles, is withdrawn from the melting crucible (13) at a predetermined rate per unit time. So that the control process can be conducted smoothly over prolonged periods of time with precise doping, the particles (2, 2a) are fed single file to the melting crucible (13) and counted by at least one sensor (21, 22). The sequence of count pulses is sent to a counter (25) and compared there with a corresponding sequence of reference input pulses. The comparison signal formed from the count pulses and the reference input pulses is used, in accordance with its sign, as a control signal for adjusting the amount of particles being discharged per unit time from source (1) to correspond to the reference value.

Abstract: There is disclosed a static mixer for intimate mixing of granular solids, a solids flow controller and a solids transfer tube which are useful to mix polycrystalline material with dopant solids, and to feed the resultant mixture continuously and accurately into a modified Czochralski-type furnace for growing single crystal material. The static mixer is a series of conical funnel plates interspaced by thieving divider plates that are formed by a plurality of triangular V-shaped, radial sectors. Contiguous to the static mixer is a storage hopper which has sufficient storage capacity for all the polycrystalline feed material required in a single run of the furnace. Located beneath the hopper is a solids flow controller that is a V-shaped trough which is vibrated along its longitudinal axis. At one end, the trough has a transverse baffle located with a gap between its bottom edge and the bottom of the trough that controls the rate of flow of the solids.

Abstract: In a process and a device for the controlled feeding of a melting crucible (13) with doped particles (2, 2a) during the drawing of a crystal (16) by the Czochralski method by the control of a flow of particles (2, 2a) from a source (1) to the melting crucible (13), the source (1) is equipped with a conveying device (4) for discharging the particles (2, 2a) at adjustable rates per unit time. A crystal (16), formed from the particles, is withdrawn from the melting crucible (13) at a predetermined rate per unit time. So that the control process can be conducted smoothly over prolonged periods of time with precise doping, the particles (2, 2a) are separated into individuals on their way to the melting crucible (13) and counted by at least one sensor (21, 22). The sequence of count pulses is sent to a counter (25) and compared there with a corresponding sequence of reference input pulses.

Abstract: A hopper is sized and shaped for reception in a crystal pulling apparatus for use in charging semiconductor source material to a crucible of the crystal pulling apparatus. The crystal pulling apparatus includes a pulling chamber, a growth chamber, an isolation valve operable to seal the growth chamber from the pulling chamber, and a crucible in the growth chamber. The hopper includes a bin constructed for containing a quantity of semiconductor source material. The bin has an opening in its bottom for delivery of the semiconductor source material from the bin to the crucible. A stopper constructed for closing the opening to prohibit passage of semiconductor source material from the bin is moved by a stopper actuating mechanism between a closed position and an open position. A connector attached to the hopper is constructed for temporarily mounting the hopper in the crystal pulling apparatus.

Abstract: A crucible is situated in a vacuum chamber and provided with a feeder for granulate material, heating elements for melting the material, and a crystal puller above the crucible. Measuring elements provide signals for a controller including a fuzzy processor utilizing an empirically determined data field to output a signal for the material feeder.

Abstract: There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.

Abstract: An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.

Abstract: The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater.

Abstract: A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.

Abstract: A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals. The method includes the steps of growing at least one crystal from the source material in the crucible, extracting a portion of a volume of the melt remaining in the crucible, adding high-purity source material to the melt, and growing at least one more single crystal. Extractor apparatus used in the method includes an insulated receptacle having an inlet tube for conducting molten source material into the receptacle. A vacuum attached to the receptacle is used to draw the source material into the receptacle.

Abstract: A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrystal material is supplied, (ii) a flat ring having heat reflecting and insulating property held horizontally above the melt, and (iii) a vertically shiftable purge tube suspended centrally into the heating chamber adapted to enter into the inner hole of the flat ring.