Abstract: A coating composition that contains at least one degradable coating layer and at least one layer of barrier coating is disclosed. The coating composition can be used to make a coated substrate having improved performance over conventional coated substrates after exposure to heat and certain chemicals like halides such as chlorides, sulfur, salt, chlorine, alkali, and enamels.

Abstract: A growth chamber or a Czochralski crystal growth station has one or more re-sealable caps that are inserted into the chamber body. An O-ring seals the cap within its mating portion of the chamber body. The re-sealable caps facilitate re-use of the chamber body for a future crystal growth cycle.

Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Abstract: Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12).

Abstract: Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure. Additionally, the method includes pulling the crystal structure away from crucible and feeding the crystal structure out of the growth chamber.

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.

Abstract: During a CZ or similar process, a silica crucible is held in a graphite or similar susceptor while being heated to above between about 1580 and 1620 degrees C. Vents or grooves formed in at least one of the outer surface of the crucible and the inner surface of the susceptor permit gasses to vent upwardly and out from between the crucible and susceptor. This permits gas evolved from the crucible as a result of the heat to be vented rather than expanding between the crucible and susceptor thereby deforming the crucible.

Abstract: An electrode anchoring structure in a crystal-growing furnace includes at least one graphite electrode pillar, at least one metal electrode pillar, at least one anchoring base, and at least one locking nut, wherein the graphite electrode pillar is engaged with a nut base of the metal electrode pillar, and the at least one metal electrode pillar is, through the anchoring base, is secured to furnace wall. Therefore, the at least one graphite electrode pillar acts both as weight support and electrical-conducting electrode. Since the flange welded on furnace wall has a greater area exposed to the atmosphere, a desirable cooling effect can be achieved, and temperature drop can be expedited if water spray is performed. The anchoring base is provided with a resilient washer, such that a resilient force can be employed to adjust loading of each graphite electrode pillar in an axial direction.

Abstract: A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.

Abstract: Disclosed is a mold wherein one bottom surface member (2) and four lateral surface members (3) are assembled. The sides of each lateral surface member (3) are respectively provided with a projection (5) and a recess (6) for combining the lateral surface members together, and the projection (5) of one lateral surface member (3) is engaged with the recess (6) of the adjacent lateral surface member (3). By using the one bottom surface member (2) and four lateral surface members (3), a mold can be assembled or disassembled without using screw or bolts. Consequently, the assembly or disassembly work of the mold is dramatically simplified, thereby improving work efficiency significantly.

Abstract: A supporting table having heaters inside a crystal-growing furnace includes a table plate and a plurality of supporting posts, wherein the supporting posts support the table plate and are, respectively, electrically connected with the heaters. Each supporting post includes, among others, a graphite electrode post, a metal electrode post, and an anchoring base. The supporting posts are each with its graphite electrode post screwed to a nut portion of the metal electrode post, and with the metal electrode post fixed to a wall of the crystal-growing furnace. The anchoring base includes, among others, a flange and an elastic washer, where the flange is welded to the wall of the furnace, and with the help of elasticity adjustment of the elastic washer, the supporting table can bear an equal distribution of loading from the supporting posts.

Abstract: A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

Abstract: A raw material feeder apparatus for industrial crystal growth systems includes a hopper disposed within a vacuum chamber and adapted to hold a quantity of raw material therein. A slide is disposed adjacent to an opening of the hopper and configured to receive the raw material from the hopper thereon. The slide is selectively moved between an open feeding position and a closed non-feeding position. The slide and a door cooperatively close the opening of the hopper, or in their open state, control the flow of raw material from the hopper. A vibrator associated with the slide feeds the raw material from the slide into an outlet tube for conveyance of the raw material to the crystal growth system.

Abstract: An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.

Abstract: An electrode assembly for use with an electrical resistance heater mounted in a housing of a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises an electrode having a first end in electrical connection with the heater within the housing and an outer end. The electrode extends through the crystal puller housing such that the outer end of the electrode is generally external of the housing. The portion of the electrode within the housing is generally solid in cross-section along the entire length of said portion and free of any internal cooling passages. An electrical conductor is electrically connected to a portion of the electrode extending externally of the housing for supplying electrical current to the electrode from a source of electrical current for conduction inward along the electrode to the heater located in the housing.

Abstract: A process for growing single crystal silicon ingots which are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. No portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown. The achievement of defect free ingots is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.

Abstract: In a heating furnace which holds at least one end of a glass rod with a holding portion and elongates the glass rod by softening the glass rod successively from the other end portion thereof with heating while applying a tensile force thereto, the heating furnace comprises a tubular portion through which the glass rod to be elongated is inserted such as to be longitudinally movable; heater, positioned within the tubular portion such as to circumferentially surround the glass rod, for heating the glass rod; a moving portion through which one end of the glass rod is inserted; bellows the ends of which are respectively secured to the moving portion and the tubular portion and which is longitudinally expandable and contractible and composed of at least a double cylinder surrounding the part of the glass rod such as to block an outside air from flowing into the heating furnace; and gas supply line for supplying, for purging, an inert gas into a space within the tubular portion and the inner bellows as well as the

Abstract: A puller apparatus for a Czochralski crystal puller system is provided which includes a primary puller chuck and a secondary puller chuck. The primary puller chuck is attached to a seed crystal. The secondary puller chuck is shaped to enclose and retain a portion of a growing crystal so that the growing crystal can be pulled by the secondary puller chuck.

Abstract: A crucible is mounted on a crucible support bolt (11, 34) in a vacuum chamber (33) resting on a base stand (32) and can be heated by the thermal radiation of a heating element. A drawing element (35) is provided above the melt, by means of which the crystal can be drawn up from the surface of the melt into a transfer lock chamber (36), which can be pivoted laterally with respect to the base stand (32). A separating device is provided between the crystal and the drawing element (35) to separate the crystal from the drawing element (35). The base stand (32) is formed by a platform (38) supported by four posts (37) three additional legs (39) of equal length extend upward from three of the four corners of the rectangular platform (38) holding the vacuum chamber (33), these (39) being held together at their top ends by a horizontal frame (40), which forms a right triangle.

Abstract: A process for the preparation of substantially hexagonal crystals of metal-free alpha phthalocyanine, said crystals ranging in size from about 1 micron to about 75 microns is disclosed. Photoelectrophoretic and manifold processes employing said crystals are also disclosed.

Abstract: Process for direct alpha to X phase conversion of metal-free phthalocyanine. In this process, the alpha polymorph of a metal-free phthalocyanine pigment can be directly converted to the X form by depositing the alpha form of the pigment on a suitable substrate followed by in situ conversion of this deposit by controlled heating. The X form of metal-free phthalocyanine is known to possess good electrophotographic speed, and, thus, can be used either alone or in combination with other photoconductive materials in electrophotography.