Abstract: A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal. An apparatus for stabilizing dendritic web growth is also described. The apparatus includes a crucible including a feed compartment for receiving pellets to facilitate melt replenishment and a growth compartment designed to hold a melt for dendritic web growth. The apparatus further includes a magnetic field generator configured to provide a magnetic field during dendritic web growth.

Abstract: The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon.

Abstract: A method for producing piezoelectric lanthanide gallium crystals includes pulling a crystal through a forming mould dipped into a crucible containing a melt, which controls a heat and mass transfer, as the crystal is grown. While a lanthanide gallium single crystal is growing, a charge of mixed oxides, having a composition of the melt may be continuously added to the melt such that the quantity of melt is maintained substantially stable. Crystals produced by this method exhibit less variability in piezoelectric properties. The growth direction of the crystal is aligned along an axis perpendicular to such a crystallographic plane of lanthanide gallium crystal that an improved temperature stability, lowered power flow angle, and reduced diffraction would be present in surface acoustic wave (SAW) devices made in this crystallographic plane. Such crystals are more suitable for the mass-production slicing wafers, for example over 2 inches in diameter, for SAW devices.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.

Abstract: A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the firs

Abstract: When producing an oxide-series single crystal by continuously pulling downwardly by .mu. pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

Abstract: An apparatus for growing hollow crystalline bodies by the EFG process, comprising an EFG die having a top surface shaped for growing a hollow crystalline body having a cross-sectional configuration in the shape of a polygon having n faces, and a radiation shield adjacent to and surrounded by the top end surface of the die, characterized in that the shield has an inner edge defining a similar polygon with n sides, and the inner edge of the shield is notched so that the spacing between the n faces and the n sides is greatest between the central portions of the n faces and the n sides, whereby the greater spacing at the central portions helps to reduce lateral temperature gradients in the crystalline body that is grown by use of the die.

Abstract: A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.

Abstract: A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.