Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: A single crystal silicon plate-shaped body as cut out from an upper portion of a straight body portion of a CZ method single crystal silicon ingot has an interstitial oxygen concentration in a crystal is 25 ppma to 45 ppma and a substitutional carbon concentration is 0.5 ppma or less in a radial center. In the radial center, oxygen precipitates are not observed in a bulk in an image of 200,000 times by a transmission electron microscope, and after heating the single crystal silicon plate-shaped body at 950° C. for 60 minutes, oxygen precipitates are observed in an image of the 200,000 times, and a shape of the oxygen precipitates is observed in a polyhedral structure in an image of 2,000,000 times.

Abstract: A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

Abstract: A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. To form the shoulder, a crucible is heated such that a heating ratio, which is calculated by dividing a volume of heat from a lower heater by a volume of heat from an upper heater, increases from a predetermined value of 1 or more.

Abstract: A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Abstract: A radiation image acquisition system includes a radiation source that outputs radiation toward an object, a scintillator that has an input surface to which the radiation output from the radiation source and transmitted through the object is input, converts the radiation input to the input surface into scintillation light, and is opaque to the scintillation light, an image capturing means that includes a lens portion focused on the input surface and configured to image the scintillation light output from the input surface and an image capturing unit configured to capture an image of the scintillation light imaged by the lens portion and outputs radiation image data of the object A, and an image generating unit that generates a radiation image of the object based on the radiation image data output from the image capturing means.

Abstract: A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.

Abstract: A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

Abstract: The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the PV region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

Abstract: A radiation image acquisition system includes a radiation source that outputs radiation toward an object, a scintillator that has an input surface to which the radiation output from the radiation source and transmitted through the object is input, converts the radiation input to the input surface into scintillation light, and is opaque to the scintillation light, an image capturing means that includes a lens portion focused on the input surface and configured to image the scintillation light output from the input surface and an image capturing unit configured to capture an image of the scintillation light imaged by the lens portion and outputs radiation image data of the object A, and an image generating unit that generates a radiation image of the object based on the radiation image data output from the image capturing means.

Abstract: The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.

Abstract: A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.

Abstract: An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (?·cm), the slope of resistivity is 0 to ?1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.

Abstract: A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.

Abstract: A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

Abstract: A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.

Abstract: The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface.

Abstract: The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

Abstract: Provided is a silicon single crystal ingot growing apparatus of an embodiment, including: a chamber; a crucible provided inside the chamber to accommodate silicon melt; a rotating shaft and a crucible support disposed at a lower portion of the crucible; a heater provided inside the chamber to heat the silicon melt; a pulling unit for rotating and pulling up an ingot grown from the silicon melt; and a magnetic field generating unit for applying a horizontal magnetic field to the crucible, wherein a first direction in which the rotating shaft rotates the crucible and a second direction in which the pulling unit rotates the ingot are the same.

Abstract: A manufacturing method of a monocrystal includes: a shoulder-formation step to form a shoulder of the monocrystal; and a straight-body-formation step to form a straight body of the monocrystal, in which, in the shoulder-formation step, providing that a distance from a lowermost portion inside the crucible to a top surface of the dopant-added melt is defined as H (mm) and a radius of the top surface of the dopant-added melt is defined as R (mm), the shoulder starts to be formed in a condition that a relationship of 0.4<H/R<0.78 is satisfied.

Abstract: Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.

Abstract: A method for producing a silicon ingot, provided with symmetrical grain boundaries, including at least steps made of: (i) providing crucible with longitudinal axis, bottom of which includes a paving formed from monocrystalline cuboid silicon seeds with a square or rectangular base and arranged contiguously, the paving, when viewed according to axis, being in shape of a grid of orthogonal directions (x) and (y) parallel to edges of seeds; and (ii) proceeding with controlled solidification of silicon by growth on seeds in a growth direction collinear to axis; wherein paving in step (i) is produced from identical silicon seeds, with two seeds contiguous in direction (x) being images of each other by turning axis (y) and two seeds contiguous in direction (y) being images of each other by turning axis (x), and misorientation 2? between crystalline arrays of two contiguous seeds being greater than 4°.

Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.

Abstract: A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.

Abstract: A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.

Abstract: A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 m?·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.

Abstract: A method of growing a single-crystal, silicon carbide epitaxial film on a silicon carbide substrate by chemical vapor deposition is disclosed that results in a stress value of the epitaxial film within ±7.8 MPa. For example, from the start of the growth of the epitaxial film until completion, introduction of a source gas including a gas containing silicon, a gas containing carbon, and a gas containing chlorine into a reaction chamber and performing epitaxial growth is alternately performed with suspension of the supply of the gas containing silicon and the gas containing carbon into the reaction chamber while furnace temperature is maintained as is during performing processing in a gas atmosphere containing only hydrogen, or hydrogen and hydrogen chloride, whereby the epitaxial film is grown. Employing such a method enables manufacture of a substrate having a silicon carbide epitaxial film with minimal warpage.

Abstract: A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.

Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Abstract: A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.

Abstract: A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.

Abstract: A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×1017 atoms/cm3 (ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.

Abstract: The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Abstract: There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio (“the area of the gap portion”/“the area of a cross-sectional of the single crystal”). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.

Abstract: The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 ?cm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle ? such that a ratio of the total of individual lengths of areas each having a taper angle ? ranging from 25° to 45° to length L of a cone side surface is 20% or less, where ? being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.

Abstract: An AFS system for a vehicle may include a motor which has a hollow motor shaft, an input shaft connected with a steering wheel and rotatably and penetratively inserted into the motor shaft, a planetary gear set including a sun gear formed at a lower end portion of the motor shaft, upper planet gears that engage with the sun gear, lower planet gears connected coaxially with the upper planet gears, a ring gear that engages with the lower planet gears, a carrier connected with a lower end portion of the input shaft so as to transmit power and connected to the lower planet gears so as to transmit power, and an output shaft formed integrally with the ring gear and extending toward a lower side of the ring gear.

Abstract: A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

Abstract: A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm2 or less.

Abstract: A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

Abstract: Compositions and methods are described for a temporary coating and adhesive with adjustable acidity for use in coating work units as a planarization coating over high topography and also for affixing thin units onto a carrier whereby such compositions provide sufficient properties to support a manufacturing process, and upon completion, the compositions are removed by an aqueous detergent that dissolves and releases the work unit within a rapid time frame without harm to its integrity. The temporary adhesive provides a tunable acidity based upon Lewis acid represented as its acid dissociative constant, Ka, where it is preferred to have Ka?1×10?6 (pKa?6), more preferred Ka?1×10?5 (pKa?5), and most preferred Ka?1×10?4 (pKa?4). The temporary coating and adhesive may be applied and cured in a variety of ways that meet the needs of the work unit and objectives of the manufacturing process.

Abstract: A method for evaluating concentration of defect in silicon single crystal substrate, defect being formed by particle beam irradiation in silicon single crystal substrate, including the steps of: measuring a resistivity of silicon single crystal substrate, followed by irradiating silicon single crystal substrate with particle beam, re-measuring resistivity of silicon single crystal substrate after irradiation; determining each carrier concentration in silicon single crystal substrate before and after irradiation on basis of measured results of resistivity before and after particle beam irradiation to calculate rate of change of carrier concentration; and evaluating concentration of VV defect on basis of rate of change of carrier concentration, VV defect being made of a silicon atom vacancy and being formed by particle beam irradiation in silicon single crystal substrate. The method can simply evaluate concentration of VV defect formed in silicon single crystal substrate by particle beam irradiation.

Abstract: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator.

Abstract: A method of manufacturing of a vitreous silica crucible includes: fusing silica powder under a reduced pressure of ?50 kPa or more and less than ?95 kPa to form a transparent vitreous silica layer as an inner layer; fusing silica powder under a reduced pressure of 0 kPa or more and less than ?10 kPa to form a bubble-containing vitreous silica layer as an intermediate layer; and fusing silica powder under a reduced pressure of ?10 kPa or more and less than ?50 kPa to form a semi-transparent vitreous silica layer as an outer layer.