Abstract: A method and an apparatus for pulling a silicon monocrystal from a melt iudes the pulling of a conical portion in each case at the beginning and at the end of the monocrystal and the pulling of a cylindrical portion between the conical portions. In this method, the surface of the conical portion at the beginning of the monocrystal is shielded by a shielding means spaced apart from the monocrystal.

Abstract: A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

Abstract: A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an apparatus including a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a conical shaped heat resistant and heat insulating component below the protective gas inlet pipe.

Abstract: A monitor wafer used to determine the cleanliness of a wafer fabrication environment requires a surface having a minimum of light scattering anomalies so that contamination deposited by the environment is not confused with light scattering anomalies initially on the monitor wafers. In the present invention, ingots of a single-crystal semiconductor are grown at a reduced pull rate and wafers produced from the ingot are annealed within a preferred temperature range that varies with the pull rate to produce wafers having reduced light-scattering anomalies on their surfaces. The number of light-scattering anomalies increases at a slower rate upon repetitive cleaning cycles than does the number of light-scattering anomalies of prior art wafers.

Abstract: An improved system and process for growing crystal fibers comprising a means for creating a laser beam having a substantially constant intensity profile through its cross sectional area, means for directing the laser beam at a portion of solid feed material located within a fiber growth chamber to form molten feed material, means to support a seed fiber above the molten feed material, means to translate the seed fiber towards and away from the molten feed material so that the seed fiber can make contact with the molten feed material, fuse to the molten feed material and then be withdrawn away from the molten feed material whereby the molten feed material is drawn off in the form of a crystal fiber.

Abstract: Apparatus for preparing a single crystal made of silicon is according to Czochralski method, which includes a tubular to the conical body which shields the growing single crystal and divides the receiver chamber above the melt into an inner portion and an outer portion, the body having at least one orifice through which inert gas which is conducted into the inner portion of the receiver chamber is able to pass directly into the outer portion of the receiver chamber. The method for preparing a single crystal made of silicon is in accordance with the Czochralski method, wherein a portion of an inert gas stream is conducted through at least one orifice in the tubular to conical body from the inner portion into the outer portion of the receiver chamber.

Abstract: The invention defines an apparatus for controlling oxygen content in Czochralski silicon crystal pullers in which silicon is melted in a quartz crucible. The apparatus includes a susceptor 10, a quartz crucible 12 in said susceptor, a cable 16 for lowering a seed crystal 14 into silicon melted in said crucible, and a combination spiral heater/magnetic coil 25 for heating and melting silicon in said crucible, and for producing a magnetic field around the crucible.

Abstract: Process for direct alpha to X phase conversion of metal-free phthalocyanine. In this process, the alpha polymorph of a metal-free phthalocyanine pigment can be directly converted to the X form by depositing the alpha form of the pigment on a suitable substrate followed by in situ conversion of this deposit by controlled heating. The X form of metal-free phthalocyanine is known to possess good electrophotographic speed, and, thus, can be used either alone or in combination with other photoconductive materials in electrophotography.

Abstract: A process for the preparation of substantially hexagonal crystals of metal-free alpha phthalocyanine, said crystals ranging in size from about 1 micron to about 75 microns is disclosed. Photoelectrophoretic and manifold processes employing said crystals are also disclosed.

Abstract: A high polymer compound containing therein the reactive group represented by the following general formula; ##SPC1##Wherein X represents O or S; Y represents a hydrogen atom or a cyano group; and R.sub.2 represents a hydrogen atom, an alkyl group having not more than 4 carbon atoms, a halogen atom or a nitro group.