Abstract: A method of fabricating a turbine engine part, the method including fabricating an ingot out of ceramic material of eutectic composition by performing the Czochralski process including putting a seed of the ingot that is to be obtained into contact with a molten bath of a mixture of eutectic composition in order to initiate the formation of the ingot on the seed, the mixture including at least two ceramic compounds; drawing the ingot from the molten bath while imposing on the ingot that is being formed a drawing speed less than or equal to 10 mm/h together with rotation at a speed of rotation less than or equal to 50 rpm; and machining the ingot as fabricated in this way in order to obtain the turbine engine part.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: [Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Abstract: To provide a dense beta-alumina-based sintered compact having a high ionic conductivity as a solid electrolyte by firing at a low temperature to suppress the volatilization of Na2O and its production method. By adding RNbO3 which is a material having a low melting point to a beta-alumina powder, followed by firing, it is possible to obtain a beta-alumina-based sintered compact having a low firing temperature and containing, as the main component, dense ?? alumina crystals which are free from anomalous grain growth during the firing process.

Abstract: A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).

Abstract: In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La2O3, Ta2O5, Ga2O3, and Al2O3, wherein a mixture having a composition represented by y(La2O3)+(1?x?y?z)(Ta2O5)+z(Ga2O3)+x(Al2O3) (in the formula, 0<x?0.40/9, 3.00/9<y?3.23/9, and 5.00/9?z<5.50/9) is used as the polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis. The grown LTGA single crystal is preferably subjected to a vacuum heat treatment. The single LTGA crystal grown by the method according to the present invention, which is highly insulative and highly stable, can be utilized in such applications as a piezoelectric element of a highly reliable combustion pressure sensor useful in measurement of a combustion pressure in a combustion chamber of an internal combustion engine.

Abstract: Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.

Abstract: The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: The invention relates to a method of fabricating at least one polycrystalline silicon plate (68, 70) with one (64, 66) of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon (60, 62) is deposited on at least one (56, 58) of the two faces of a support (50). The method comprises the steps of embossing said face (52, 54) of the support (50) to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer (60, 62) on said embossed face (56, 58) of the support (50), the surface (64 or 66) of said polycrystalline silicon layer situated in contact with said embossed face (56 or 58) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (68 or 70). The invention is applicable to fabricating solar cells.

Abstract: An oxide single crystal having a composition represented by RExSi6O1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation coincides with the c-axis direction. The solidification rate (the weight of the grown crystal÷the weight of the charged raw material) in the crystal growth is less than 45%.

Abstract: The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.

Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Abstract: A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of ?c plane, of the single crystal grown by the liquid phase epitaxial growth method.

Abstract: A production method of a zinc oxide single crystal, comprising depositing a crystal of zinc oxide on a seed crystal from a mixed melt of zinc oxide and a solvent capable of melting zinc oxide and having a higher average density than zinc oxide in the melt. Preferably, a zinc oxide single crystal is continuously pulled while supplying the same amount of a zinc oxide raw material as that of the pulled zinc oxide. A single crystal excellent in the crystal quality and long in the pulling direction can be continuously produced.

Abstract: A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.

Abstract: There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growing a single crystal according to a single crystal pulling method, wherein a growth rate and/or a temperature fluctuation period are controlled so that V×F/sin ? may be in a certain range when a growth rate at the time of growing a single crystal is defined as V (mm/min), a temperature fluctuation period of crystal melt is defined as F (min), and an angle to the level surface of a crystal-growth interface is defined as ?.

Abstract: An epitaxial layer regrowth method and device. A single crystal seed layer is deposited on a support wafer. An exfoliation layer is implanted in the single crystal seed layer. Trenches are etched in a portion of the single crystal seed layer and a portion of the exfoliation layer. The single crystal seed layer, on the support wafer, is bonded to a substrate. The support wafer and the exfoliation layer are removed leaving behind one or more single crystal seeds, generated from the single crystal seed layer, on the substrate. A first epitaxial layer is grown on the substrate from the single crystal seeds and a device layer is grown on the first epitaxial layer. In an alternative embodiment, a single crystal seed layer is deposited on a support wafer comprising an etch stop.

Abstract: A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.

Abstract: The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 ?·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 ?·cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods.

Abstract: The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pulling-up Langasite is within a range of ±0.05% with respect to the target amounts at all measured locations, and because of having a superior homogeneity in the content of components over the entire ingot, when used, for example, in a piezoelectric device such as an surface acoustic wave filter, has properties for industrial application that contribute to the stabilization of characteristics as well as reducing the costs.

Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.

Abstract: A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

Abstract: A method for growing solid state laser crystal boules is disclosed that when made into laser rods do not need separate end caps attached to the laser rods. The crystal boule is grown as a single integral unit with three segments. Two segments, the end segments, are un-doped or non-laser active, and they flank a central segment of the boule that is doped with an active laser ion. A first end segment of the crystal boule is first grown from un-doped melt material in a first crucible by slowly withdrawing its growing end from the first melt. The boule is then transferred to a doped melt in a second crucible where its growing end is submersed therein to grow the doped, laser active central segment. The temperature of the melt in the second crucible is initially higher than the growing temperature of the first melt and causes the growing end of the boule to melt.

Abstract: A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Abstract: A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Abstract: A method for producing a transparent white large single crystal of zinc oxide includes the steps of mixing zinc oxide as a solute with molybdenum oxide as a solvent, heating the resultant mixture till fusion, and thereafter keeping the temperature of the produced melt intact or lowering the temperature thereof, thereby inducing deposition and growth of a microcrystal represented by the general formula, ZnO, on a seed crystal or substrate.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The high quality silicon wafer of large diameter is invented by mainly paying attention to the particles ascribed to the crystal and the wafer is optimal for manufacturing ultra highly integrated devices. The silicon wafer is of diameter of 300 mm and larger sliced from a single-crystal silicon ingot pulled by CZ method, the surface is mirror-polished and cleaned with ammonia based cleaning solution, and the number of particles of 0.083 &mgr;m and larger in size detected on its main surface is 120 and smaller and/or particles of 0.090 &mgr;m and larger in size is smaller than 80.

Abstract: An oxide single crystal having a nominal composition expressed BaM.sub.2 O.sub.4 (M is at least an element selected from the group consisting of Al and Ga), M of which is partially substituted with B, is provided. The BaM.sub.2 O.sub.4 oxide single crystal has an asymmetric central portion formed around B and thereby exhibits a non-linear optical property.

Abstract: A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably silicon nitride powder, to the vessel, and heating the vessel for a time sufficient to melt the silicon material and to dissolve the nitrogen-containing in the silicon material in order to form the melt. A nitrogen-doped silicon single crystal is then produced from the melt by the Czochralski method by pulling the silicon single crystal from the melt with a seed crystal.

Abstract: A process for preparing an oxide crystal by means of solution growth in the presence of a solvent is provided. The solvent includes a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal, a halide containing at least one member of those elements which constitute the oxide crystal, and metallic silver.

Abstract: The present invention relates to single crystals of CsB.sub.3 O.sub.5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB.sub.3 O.sub.5 are useful as NLO materials. The NLO devices made of CsB.sub.3 O.sub.5 single crystals can be used in a laser system of high power density and relatively large divergence and posses a character of high SHG conversion efficiency. Moreover, the NLO devices of the present invention are capable of producing coherent harmonics of wavelength as short as 170 nm and tolerating larger processing error of crystals.

Abstract: According to the process of the present invention for producing a garnet single crystal fiber, a crystal is grown while the direction of a seed crystal, corresponding to the direction of growth, is set in a direction having angles of at least 10.degree. from a direction equivalent to the <100> orientation, at least 20.degree. from a direction equivalent to the <110> orientation and at least 20.degree. from a direction equivalent from the <211> orientation. The resulting garnet single crystal fiber does not include a core, which is formed due to facet formation, and has an excellent optical homogeneity necessary for use in an optical device such as a laser device or an isolator.

Abstract: A low-temperature phase oxide single crystal having a nominal composition of Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 is synthesized by partially substituting B of BaB.sub.2 O.sub.4 with one or more additive elements M and by growing the single crystal in a Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 composition compound (where M is one or more additive elements selected from the group consisting of Al, Ga and In, and 0.001<x<0.15).

Abstract: Disclosed are a process for the production of solid solution single crystals of KTiOPO.sub.4 wherein a part or all of at least one of the elements, K, Ti and P is substituted with one or more other elements, which comprises moving a grown part(s) of crystal(s) to outside of a melt for the crystal growth while maintaining contact of a growing part(s) of the crystal(s) with said melt to obtain the above solid solution single crystals, wherein the moving is carried out while maintaining the temperature of the melt substantially constant and maintaining said melt at a substantially constant composition at which the solid solution single crystal(s) with the desired composition is precipitated at the above maintained temperature and a solid solution single crystal of KTiOPO4 wherein a part or all of at least one of the elements, K, Ti and P is substituted with one or more other elements and its composition is substantially homogeneous within its cubic portions of a side length of 1 cm.

Abstract: In a single-crystal manufacturing method, after a single crystal is grown, the crystal is separated from the molten melt and gradually cooled while suspended immediately above the surface of the melt. During this cooling, a measure, which produces solidification of the melt, is locally applied. As a result, the solidification of the melt is selectively forced so that at least the melt forms a crust and prevents the crystal, should it fall, from becoming immersed in molten melt. This measure also protects the crystal from any sudden release of heat such as tends to occur if the melt becomes supercooled prior to the onset of crystallization.

Abstract: The material of the present invention is a mixture of catalytically active material and carrier materials, which may be catalytically active themselves. Hence, the material of the present invention provides a catalyst particle that has catalytically active material throughout its bulk volume as well as on its surface. The presence of the catalytically active material throughout the bulk volume is achieved by chemical combination of catalytically active materials with carrier materials prior to or simultaneously with crystallite formation.

Abstract: In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature.

Abstract: A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the substrate contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the substrate and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the substrate as primary crystals.

Abstract: A surface-cooled fluid bed crystallizer apparatus and method are disclosed wherein submerged heat exchanger surfaces (typically heat exchanger tubes or plates through which a coolant is passed) are bathed with a stream of gas bubbles (preferably air). The gas bubbles increase localized velocity at the heat exchanger surfaces, improves heat transfer, reduces crystallization on the heat exchanger surfaces and gently keeps the crystals in suspension, thereby avoiding unwanted nucleation as is characterized by the use of mechanical circulation devices. By continuously removing the depleted magma and crystals, the crystallizer can be operated in a continuous mode.

Abstract: In growing a single crystal of .beta.-BaB.sub.2 O.sub.4 from a melt of BaB.sub.2 O.sub.4 by the Czochralski method, crushed single crystal particles of either .beta.-BaB.sub.2 O.sub.4 or .alpha.-BaB.sub.2 O.sub.4 are used as the starting material of the melt. The primary advantage of using the crushed single crystal particles resides in that transformation of a polycrystal initially nucleated on a platinum rod, which is brought into contact with the melt in place of a seed crystal, to single crystal can be accomplished in a greatly shortened time. In consequnce, high quality single crystals are obtained at good yield.

Abstract: A method of pulling a crystal of a metal oxide is disclosed, in which the growth of the crystal is performed in a liquid phase having a composition which is different from the metal oxide and which contains components constituting the metal oxide. The liquid phase is in contact with a solid phase located at a position separated from the position at which the crystal of the metal oxide grows. The solid phase has a composition different from that of the metal oxide and supplies components constituting the metal oxide to the liquid phase.

Abstract: The present invention relates to single crystals of CsB.sub.3 O.sub.5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB.sub.3 O.sub.5 are useful as NLO materials. The NLO devices made of CsB.sub.3 O.sub.5 single crystals can be used in a laser system of high power density and relatively large divergence and posses a character of high SHG conversion efficiency. Moreover, the NLO devices of the present invention are capable of producing coherent harmonics of wavelength as short as 170 nm and tolerating larger processing error of crystals.