Abstract: A crystal growth apparatus according to the present embodiment includes a crucible, a heater which is installed on an outward side of the crucible and surrounds the crucible, and a coil which is installed on an outward side of the heater and surrounds the heater, in which an inner surface of the heater on the crucible side includes a first region, and a second region which is further away from an outer side surface of the crucible than the first region is.

Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single

Abstract: Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

Abstract: Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.

Abstract: Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass.

Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

Abstract: A crystallization apparatus is provided. The crystallization apparatus includes a visible light source capable of obtaining high energy density output therein. A visible light irradiation system is formed by a plurality of visible laser beam sources arranged in a two-dimensional array. The visible light irradiation system includes a light intensity distribution forming apparatus for patterning light intensity distribution of a plurality of visible laser beams emitted by each visible laser beam source, and an imaging optical system for imaging the light having the light intensity distribution patterned by the light intensity distribution forming apparatus onto an irradiated region on the processed substrate. The visible laser beams emitted by a plurality of solid lasers or semiconductor lasers are overlapped in the light intensity distribution forming apparatus that satisfies an imaging position relationship in an optical axis with respect to the processed substrate.

Abstract: A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate.

Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

Abstract: A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: The invention provides a method of manufacturing a doped i X—Ba—Cu—O material, the method comprising the steps of: a) mixing an X—Ba—L—O or X—Ba—Cu—L—O material with an X—1 Ba—Cu—O material; and b) crystallising the mixture; 1 wherein each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and L is selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn. The invention further provides a doped material manufactured by the method of the invention.

Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.

Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.

Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.

Abstract: A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by building from feedstock on top of and upward from a heated base element. The top of the structure is also heated with a scanning beam as it is built. The higher temperatures near the melting alloy tend to promote crystal growth rather than nucleation as the grain grows toward the heat of the scanning beam. This allows a two-dimensional thermal gradient to be formed in the build direction, which allows the solid crystal to maintain one orientation during the deposition process. As the material initially solidifies, it nucleates off of a desired grain that is designated by a grain selector. This method eliminates the need for expensive mold cavities and segmented furnaces that are typically required by prior art processes for producing some components.

Abstract: There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.

Abstract: A method of manufacturing a semiconductor device, including depositing a gate oxide film over a substrate and conditioning the deposited gate oxide film using laser thermal annealing in a single process chamber, and depositing a gate electrode film over the conditioned gate oxide film.

Abstract: A sequential lateral solidification mask having a first region with a plurality of first stripes that are separated by a plurality of first slits. The mask further includes a second region having a plurality of second stripes separated by a plurality of second slits. The second stripes are perpendicular to the first stripes. A third region having a plurality of third stripes separated by a plurality of third slits, with the third stripes being transversely arranged relative to the first stripes. A fourth region having a plurality of fourth stripes and a plurality of fourth slits between the fourth stripes, with the fourth stripes being transversely arranged relative to the second stripes. Sequential lateral solidification is performed using the mask by multiple movements of the mask and multiple, overlapping irradiations.

Abstract: A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing the laser beam. Each stripe-shaped light transmitting portion is rectangular-shaped, and each light-transmitting portion includes triangular-shaped or semicircular-shaped edges on both sides. The distance between the adjacent light transmitting portions is less than the width of the light transmitting portion. The width of the light transmitting portions is less than or equal to twice the maximum length of lateral grain growth that is to be grown by sequential lateral solidification (SLS).

Abstract: The present invention relates to the manufacturing of high purity optical flouride crystals, the making of purified optical flouride crystal feedstocks and to the anionic purification of optical fluoride crystalline materials. The invention relates generally to methods for removing oxide impurities from optical fluoride crystal feedstocks. More specifically, the invention relates to a method for preparing purified optical fluoride crystal feedstocks and the use of the feedstock in manufacturing VUV<200 nm transmission optical fluoride crystals for VUV lithography/laser systems.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: A process of preparing aligned, in-situ, two-phase single crystal alloys of titanium, aluminum and niobium which comprises growing the alloys at rates of about 3.0 mm. to about 6.0 mm. per hour by rotating a seed rod alloy consisting essentially of Ti-43 to 45 Al-10 to 12 Nb+0.5 Si, in atomic percent, at about 7.75 to 8.25 RPM while in contact with a rotating feed rod alloy consisting essentially of Ti-43 to 45 Al-10 to 12 Nb, in atomic-percent, rotating at about 5.75 to 6.25 RPM in an atmosphere of substantially pure argon at melt temperatures ranging from about 1650° C. to 1750° C. to obtain two-phase single crystal alloys of Ti-43 to 45Al-10 to 12 Nb characterized as having improved ductility, excellent oxidation resistance, and high-temperature creep strength. These alloys are particularly useful for manufacturing high-temperature material components for internal combustion engines, gas turbines, and advanced aircraft engines.

Abstract: A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth of the single crystal is lower than about 10% by volume.

Abstract: A new ingot of a desired orientation formed from an original ingot of a different orientation by cutting the new ingot from within the original ingot. In one aspect, to form a <110> ingot from a <100> ingot, a {110} flat is formed on the <100> ingot. The flat is used as a reference for cutting the <100> ingot. The <100> ingot is cut into sections by cutting in a plane perpendicular to the <100> ingot's longitudinal axis and to the flat. A <110> ingot can be formed by grinding a section of the <100> ingot to form a new cylinder. The new cylinder has a longitudinal axis which is perpendicular to the <100> ingot's longitudinal axis and to the flat. The resulting cylinder is a <110> ingot.

Abstract: In a method of drawing single crystals from a body of highly pure polycrystalline material molten by inductive heating, a solid body of the polycrystalline material is first heated by direct induction heating at a frequency >200 KHz to increase its conductivity and is then further heated by direct induction heating at a frequency <20 KHz to melt the center of the body of polycrystalline material to form a molten pool contained by a marginal solid zone of the polycrystalline material from which the single crystal is drawn.

Abstract: The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of the melt and the solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.

Abstract: For the solution growth, a solvent is used which is composed of a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal and a halide containing at least one member of those elements which constitute the oxide crystal. The process enables the temperature of crystal growth to be lowered to a significant extent, avoids inclusions such as impure anionic elements from getting intruded into the oxide crystal, while retaining adequate crystal growth through solution growth, and affords, in spite of an atmospheric mode of crystal growth and with the pinning force of magnetic flux used to advantage, the same level of beneficial effects as in a mode of crystal growth at a low oxygen pressure.

Abstract: A neutron radiation detector is described. A semiconductor material is populated with helium three (.sup.3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a .sup.3 He atom, a tritium ion and a proton are generated with energies of 0.191 and 0.573 MeV, respectively. These energies are deposited in the semiconductor material creating electron-hole pairs. The electron-hole pairs are withdrawn from the material by the application of an electric field and are collected as charges at the terminals. The associated circuitry processes the charges into pulses with these being counted and their sizes measured. The results are recorded and displayed. The number of pulses are a measure of the number of neutrons absorbed in the detector and of the neutron flux of interest. In many instances the detector can also be used to detect and display non-neutron type radiation or simultaneously neutron and non-neutron forms of radiative activity.

Abstract: A surface-cooled fluid bed crystallizer apparatus and method are disclosed wherein submerged heat exchanger surfaces (typically heat exchanger tubes or plates through which a coolant is passed) are bathed with a stream of gas bubbles (preferably air). The gas bubbles increase localized velocity at the heat exchanger surfaces, improves heat transfer, reduces crystallization on the heat exchanger surfaces and gently keeps the crystals in suspension, thereby avoiding unwanted nucleation as is characterized by the use of mechanical circulation devices. By continuously removing the depleted magma and crystals, the crystallizer can be operated in a continuous mode.

Abstract: High purity semiconductor foils, such as silicon foils useful in solar energy cells, are produced by treating an impure semiconductor foil with at least one reactive gas while in the crystallizing state.

Abstract: A method of manufacturing a superconductor by applying a floating zone method to a raw material sintered ingot. This method is adapted to obtain an elongated superconductor which can provide high critical current density. A floating zone is moved along the raw material sintered ingot with such speed difference that the speed in its forward end portion is higher than that in its rear end portion, thereby to obtain a superconductor having a smaller diameter. In order to attain a higher crystal orientation property, it is preferable to select the product of the diameter (D mm) of a superconductor provided with a crystal orientation property, which is produced after passage of the floating zone, and the speed (V mm/h) for moving the floating zone in a range of 0.5.ltoreq.DV.ltoreq.20 and to select pressure P of an atmosphere encircling the floating zone in a range of 0<P.ltoreq.3 [kgf/cm.sup.2 ] as well as to pass the floating zone along the raw material sintered ingot at least twice.

Abstract: A single crystal of a compound comprises which easily decomposes at a temperature around the melting point and evaporates at least a part of the compound having a volume of 5 cc or more and a composition deviation of respective elements from the stoichiometric composition of the compound being within the range of .+-.5% in terms of weight ratio.

Abstract: Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising an initial step of low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by comminution of the diamond thus obtained and conversion thereof to single-crystal diamond under high pressure conditions.