Abstract: An electron beam of more than 1.times.10.sup.19 e/cm.sup.2 .multidot.sec is irradiated to metastable metal oxide particles such as .theta.-Al.sub.2 O.sub.3 particles or the like disposed on an amorphous carbon film. A phase transformation or the like of the metastable metal oxide particles is occurred by the electron beam irradiation. Thus, stable metal oxide ultrafine particles such as an .alpha.-Al.sub.2 O.sub.3 ultrafine particle 2 whose diameter is more tiny than the metastable metal oxide particles used, and a metal ultrafine particle composed of an oxide such as Al ultrafine particles are produced.

Abstract: A method for forming an optical device includes the steps of providing a first plate having a first face defining a recess, filling the recess with a material which can be crystallized, and covering the first face and the recess with a second plate having a second face, so that the second face is in contact with the first face and the material in the recess is completely enclosed by the first and second plates. The material in the recess is thereby protected from chemical and mechanical damage, as well as evaporation. In addition, the plates can be transparent, allowing the material in the recess to be visually monitored. A grown crystalline film packed in the cell can be used as a non-liner and/or electro-optical device.

Abstract: Process for controlling the density of oxygen precipitate nucleation centers in single crystal silicon. In the process, the single crystal silicon is annealed at a temperature of at least about 350.degree. C. to cause the formation of oxygen precipitate nucleation centers in the single crystal silicon. During the annealing step, the single crystal silicon is heated (or cooled) to achieve a first temperature, T.sub.1, which is between about 350.degree. C. and about 500.degree. C. The temperature is then increased from T.sub.1 to a second temperature, T.sub.2, which is between about 500.degree. C. and about 750.degree. C. with the average rate of temperature increase from T.sub.1 to T.sub.2 being less than about 25.degree. C. per minute. The annealing is terminated at a point in time when the oxygen precipitate nucleation centers are capable of being dissolved by heat-treating the silicon at a temperature not in excess of about 1150.degree. C.

Abstract: A method for producing a crystal film of an organic compound from a molten liquid or solution of the organic compound on a substrate or between a pair of substrates, the substrate or at least one of the pair of substrates having on a part of the surface thereof a three-dimensional geometrical structure capable of controlling the direction of the crystal growth of the organic compound, and the other part of the surface thereof than the part having a three-dimensional geometrical structure being smooth. The resulting crystal film comprises a sufficiently large single crystal for application to a practical element with its orientation controlled in an arbitrarily selected direction.

Abstract: A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, andsaid powder material is brought under high pressure by applying a gradient pressure to the material, while the portion of the powder material to which maximum pressure is applied is irradiated by a laser beam optionally through a diamond window material. An apparatus for fabricating diamond is also described.