Including A Vertical Dipping System Patents (Class 117/60)
  • Patent number: 11655561
    Abstract: In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: May 23, 2023
    Assignee: SHOWA DENKO K.K.
    Inventors: Hiromasa Suo, Kazuma Eto, Tomohisa Kato
  • Patent number: 10177534
    Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: January 8, 2019
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
  • Patent number: 10145025
    Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: December 4, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kazuaki Seki, Kazuhiko Kusunoki, Kazuhito Kamei, Katsunori Danno, Hironori Daikoku, Masayoshi Doi
  • Patent number: 10119199
    Abstract: A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: November 6, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kazuaki Seki, Kazuhito Kamei, Kazuhiko Kusunoki, Katsunori Danno, Hironori Daikoku, Masayoshi Doi
  • Patent number: 10094044
    Abstract: A SiC single crystal comprising no polycrystals, and no cracking other than at the side edges is provided. A method for producing SiC single crystal in which seed crystal held at bottom end face of holding shaft is contacted with Si—C solution having temperature gradient to grow SiC single crystal, wherein the contour of the end face of the holding shaft is smaller than the contour of the top face of the seed crystal, the top face of the seed crystal has center section held in contact with the entire surface of the end face of the holding shaft and outer peripheral section that is not in contact with the end face of the holding shaft, and carbon sheet is disposed on the top face of the seed crystal so as to cover at least the outer peripheral section, among the center section and the outer peripheral section.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: October 9, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Katsunori Danno
  • Patent number: 9530642
    Abstract: Provided is a method for producing an SiC single crystal, which is capable of greatly increasing the growth rate in a solution technique in comparison to conventional methods. A method for producing an SiC single crystal, wherein an SiC single crystal is grown by bringing a seed crystal substrate into contact with an Si—C solution that is put in a crucible and has a temperature gradient decreasing from the inside to the liquid level, and wherein the value of depth/inner diameter of the crucible is less than 1.71 and the temperature gradient of the Si—C solution from the liquid level to 10 mm below the liquid level is larger than 42° C./cm.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: December 27, 2016
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Motohisa Kado, Kazuhiko Kusunoki, Kazuhito Kamei
  • Patent number: 9429662
    Abstract: A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: August 30, 2016
    Assignees: Consolidated Nuclear Security, LLC, Fisk University
    Inventors: Ashley C. Stowe, Arnold Burger, Michael Groza
  • Patent number: 9334581
    Abstract: A method for synthesizing I-III-VI2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: May 10, 2016
    Assignees: Consolidated Nuclear Security, LLC, Fisk University
    Inventors: Ashley Stowe, Arnold Burger
  • Publication number: 20150075419
    Abstract: A method for producing a SiC single crystal having a large growth thickness of 10 mm or greater by a solution process is provided. This is achieved by a method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater.
    Type: Application
    Filed: September 11, 2014
    Publication date: March 19, 2015
    Inventors: Motohisa Kado, Hironori Daikoku, Kazuhiko Kusunoki, Kazuhito Kamei
  • Patent number: 8940095
    Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: January 27, 2015
    Assignee: Rensselaer Polytechnic Institute
    Inventor: Partha Dutta
  • Publication number: 20150013590
    Abstract: The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft.
    Type: Application
    Filed: December 27, 2012
    Publication date: January 15, 2015
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Motohisa Kado, Kazuhiko Kusunoki
  • Publication number: 20140261156
    Abstract: The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 ?m, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (1), in such a way that each of the surfaces of the substrates (1) that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface (3) of the liquid bath (2) and the gas atmosphere (4) contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (3); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the
    Type: Application
    Filed: October 2, 2012
    Publication date: September 18, 2014
    Inventors: Virginie Brize, Jean-Paul Garandet, Stephen Giraud, Etienne Pihan
  • Publication number: 20140158041
    Abstract: The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.
    Type: Application
    Filed: July 25, 2012
    Publication date: June 12, 2014
    Applicant: SOITEC
    Inventor: Michel Bruel
  • Patent number: 8702864
    Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: April 22, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Yukio Terashima, Yasuyuki Fujiwara
  • Patent number: 8480803
    Abstract: A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: July 9, 2013
    Assignee: Corning Incorporated
    Inventors: Glen Bennett Cook, Prantik Mazumder, Balram Suman, Christopher Scott Thomas
  • Publication number: 20130042802
    Abstract: The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.
    Type: Application
    Filed: July 17, 2009
    Publication date: February 21, 2013
    Inventors: Katsunori Danno, Akinori Seki, Hiroaki Saitoh, Kawai Yoichiro
  • Patent number: 8287644
    Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: October 16, 2012
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Yukio Terashima, Yasuyuki Fujiwara
  • Publication number: 20120097092
    Abstract: A crystal growth apparatus includes a vacuum sealable container, a crucible in the vacuum sealable container. The crucible can receive a polycrystalline material. The crucible comprises a seed well configured to hold a seed crystal. The wall of the crucible can include a base layer of a first material and a coated layer of a second material. The base layer provides mechanical strength to the crucible. A heater can heat the polycrystalline material to form a melt in contact with the seed crystal. The coated layer of the crucible allows a single crystal to grow in the melt.
    Type: Application
    Filed: October 20, 2010
    Publication date: April 26, 2012
    Inventor: Meng Zhu
  • Patent number: 8163083
    Abstract: A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 ?m/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.
    Type: Grant
    Filed: July 9, 2008
    Date of Patent: April 24, 2012
    Assignees: Japan Super Quartz Corporation, Sumco Corporation
    Inventors: Hiroshi Kishi, Minoru Kanda
  • Publication number: 20110198614
    Abstract: A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10?3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
    Type: Application
    Filed: February 24, 2011
    Publication date: August 18, 2011
    Applicants: SUMITOMO METAL INDUSTRIES, LTD., Mitsubishi Electric Corporation
    Inventors: Kazuhiko KUSUNOKI, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori
  • Patent number: 7588636
    Abstract: A method of production of a silicon carbide single crystal enabling fast, stable, and continuous growth of a high quality silicon carbide single crystal and enabling both an increase in size of the bulk single crystal and an improvement of quality of a thin film single crystal, comprising stacking, in order from the bottom, a silicon carbide source material rod, a solvent, a seed crystal, and a support rod supporting the seed crystal at its bottom end so as to form a columnar workpiece, heating a bottom end of the source material rod as a bottom end of the columnar workpiece, and cooling a top end of the support rod as the top end of the columnar workpiece so as to form a temperature gradient inside the columnar workpiece so that the top end face becomes lower in temperature than the bottom end face of the solvent; and causing a silicon carbide single crystal to grow continuously downwardly starting from the seed crystal, wherein said method further comprises using an inside cylindrical susceptor tightly surr
    Type: Grant
    Filed: November 19, 2004
    Date of Patent: September 15, 2009
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventor: Masateru Nakamura
  • Publication number: 20090000540
    Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
    Type: Application
    Filed: July 7, 2008
    Publication date: January 1, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Masaki MIZUTANI, Katsumi NAKAGAWA, Takehito YOSHINO, Shoji NISHIDA
  • Patent number: 7351283
    Abstract: A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using a crystal grower (116, 200). In one embodiment, the crystal grower comprises a solution (124) containing the molecular precursor in a solvent (140). Molecules are added to the lateral growth front by moving one or both of the free surface (120, 120?) of the solution and deposition surface relative to the other at a predetermined rate. In another embodiment, the crystal grower comprises a mask (212) that includes at least one opening (216). Precursor molecules are vacuum deposited via a molecular beam (236) at the growth front (228) of the crystalline thin structure (204) as one or both of the opening and surface are moved relative to the other at a predetermined rate.
    Type: Grant
    Filed: March 11, 2005
    Date of Patent: April 1, 2008
    Assignee: The University of Vermont and State Agricultural College
    Inventor: Randall L. Headrick
  • Patent number: 7118625
    Abstract: With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: October 10, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shoji Nishida, Takehito Yoshino, Masaaki Iwane, Masaki Mizutani
  • Patent number: 7048797
    Abstract: A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epitaxy which comprises a crystallizing material dissolved in a solvent in a supersaturated state and which is flowing in a solution flow passage, and while said plurality of substrates being moved by virtue of said flowing solution in said solution flow passage, a crystal film is grown on the surfaces of said plurality of substrates which are in contact with said flowing solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
    Type: Grant
    Filed: September 22, 2003
    Date of Patent: May 23, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Mizutani, Takehiko Yoshino, Shoji Nishida
  • Patent number: 7022181
    Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: April 4, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Masaki Mizutani
  • Patent number: 6951584
    Abstract: An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
    Type: Grant
    Filed: February 12, 2003
    Date of Patent: October 4, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noritaka Ukiyo, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Masaaki Iwane, Masaki Mizutani
  • Patent number: 6946029
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Grant
    Filed: February 25, 2004
    Date of Patent: September 20, 2005
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Patent number: 6902619
    Abstract: The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate, providing at least a first growth solution and optionally one or more further growth solutions, and (i) exposing the substrate to the first growth solution, the growth solution being under a supersaturated condition such that a first layer grows on the surface of the substrate; and, (ii) optionally exposing the substrate to one or more further growth solutions, the further growth solutions being under a supersaturated condition such that one or more further layers grow on the surface of the first layer; and (iii) varying the pressure of the system to change the degree of supersaturation of the first growth solution or one or more further growth solutions to affect the growth of the first layer or one or more further layers.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: June 7, 2005
    Assignee: NTU Ventures PTE. Ltd.
    Inventors: Yuen Chuen Chan, Xiangjun Mao
  • Patent number: 6869863
    Abstract: Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: March 22, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventor: Shoji Nishida
  • Patent number: 6387780
    Abstract: Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.
    Type: Grant
    Filed: September 18, 1997
    Date of Patent: May 14, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventor: Shoji Nishida
  • Patent number: 6338755
    Abstract: An amorphous film 2 is formed on a single crystalline substrate 1. Then, the amorphous film is selectively removed by photolithography to form windows 3. Subsequently, the windows 3 are contacted with a supersaturated solution 5 dissolving a given element in supersaturation and thereby, single crystals containing the given element as a constituting element are epitaxially grown in a perpendicular direction to a surface of the single crystalline substrate from the windows. Then, after a given time elapsed, the epitaxial growth is stopped by finishing the contact of the windows with the supersaturated solution 5 and single crystalline members 6 having given sizes and shapes are obtained.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: January 15, 2002
    Assignee: The University of Tokyo
    Inventor: Tatau Nishinaga
  • Patent number: 6231667
    Abstract: A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber.
    Type: Grant
    Filed: November 27, 1998
    Date of Patent: May 15, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Isao Tanikawa, Katsumi Nakagawa, Tatsumi Shoji, Shoji Nishida, Noritaka Ukiyo
  • Patent number: 5922126
    Abstract: The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness, the thermal deterioration of the substrate, etc. The wafer holder comprises a holder body (11) formed with at least one wafer accommodating space in which at least two semiconductor wafers (15) can be held in such a way that reverse surfaces of the two wafers are brought into contact with two opposing inner side walls of the wafer holder and right surfaces of the two wafers are opposed to each other with a predetermined space between the two; and a holder cover (12) for covering an open surface of the holder body (11). Further, the holder body (11) is formed with an inlet port (16) for injecting a source into the wafer accommodating space and an outlet port (13) for exhausting the source from the wafer accommodating space.
    Type: Grant
    Filed: May 30, 1997
    Date of Patent: July 13, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuyoshi Furukawa, Masami Iwamoto
  • Patent number: 5846319
    Abstract: A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperature while causing Hg to vaporize and rise within the growth solution vessel. A water-cooling jacket causes the Hg to condense and form on the walls of the growth solution vessel. The Hg condensate is directed into a calibrated reservoir. HgCdTe growth continues as the Hg is depleted from the growth solution and fills the reservoir. The reservoir is calibrated to hold the specific amount of Hg condensate corresponding to the desired layer of HgCdTe. The reservoir overflows when full and directs the overflow into the growth solution, causing HgCdTe formation to cease. The volume of the reservoir may be altered to capture more or less Hg condensate, as desired, in order to change the amount of HgCdTe formed on the CdTe substrate.
    Type: Grant
    Filed: March 13, 1996
    Date of Patent: December 8, 1998
    Assignee: Amber Engineering, Inc.
    Inventor: Jeffrey Brian Barton
  • Patent number: 5616176
    Abstract: A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formulaGd.sub.a Ho.sub.b Eu.sub.d Bi.sub.3-a-b-d Fe.sub.5-c M.sub.c O.sub.12,in which M is an element or a combination of elements selected from the group consisting of aluminum, scandium, gallium and indium, the subscript a is a positive number in the range from 1.1 to 2.1, the subscript b is a positive number in the range from 0.1 to 0.9, the subscript c is 0 or a positive number not exceeding 0.5 and the subscript d is zero or a positive number not exceeding 0.6 or, in particular, in the range from 0.03 to 0.6 with the proviso that 3-a-b-d is in the range from 0.7 to 1.2.
    Type: Grant
    Filed: June 28, 1995
    Date of Patent: April 1, 1997
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Satoru Fukuda, Masayuki Tanno, Toshihiko Ryuo
  • Patent number: 5603762
    Abstract: A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: February 18, 1997
    Assignee: NGK Insulators, Ltd.
    Inventors: Nobuyuki Kokune, Kazuaki Yamaguchi, Shoji Sogo, Ryuichi Ohuchi, Tatsuo Kawaguchi, Minoru Imaeda
  • Patent number: 5544616
    Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
    Type: Grant
    Filed: May 27, 1994
    Date of Patent: August 13, 1996
    Assignee: Midwest Research Institute
    Inventors: Theodore F. Ciszek, Tihu Wang
  • Patent number: 5539569
    Abstract: According to the invention, a film of optoelectric single crystal may be formed on a substrate made of optoelectric single crystal by a liquid phase epitaxial process. The process comprises the steps of producing a melt of a solute and a melting medium, a solid phase and a liquid phase coexisting in the melt; then cooling the liquid phase for producing super cooling state in the liquid phase; and contacting the substrate to the liquid phase to form the film on the substrate by an epitaxial growing process. The film may be produced on the substrate, the film having a half value width of an X-ray rocking curve not more than that of the substrate.
    Type: Grant
    Filed: March 27, 1995
    Date of Patent: July 23, 1996
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuguo Fukuda, Tatsuo Kawaguchi, Minoru Imaeda
  • Patent number: 5362683
    Abstract: To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
    Type: Grant
    Filed: March 4, 1994
    Date of Patent: November 8, 1994
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Takao Takenaka, Masahisa Endo, Masato Yamada
  • Patent number: 5314571
    Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
    Type: Grant
    Filed: May 13, 1992
    Date of Patent: May 24, 1994
    Assignee: Midwest Research Institute
    Inventor: Theodore F. Ciszek