Quartz (sio2) Product Patents (Class 117/72)
  • Patent number: 10660557
    Abstract: Systems and method are disclosed for determining a concentration of an analyte in a fluid (e.g., blood). The system can draw blood from a patient and deliver the blood to a sample cell. A particular component of the fluid (e.g., plasma) may be separated and/or positioned such that the concentration of the analyte is measured in the particular component of the fluid (e.g., plasma). The sample cell can include a sample container that has two window pieces. The system can have a fluid passage having a tip configured to mate with a multi-lumen catheter without leaking. The multi-lumen catheter can have proximal and distal ports. A fluid pressure system can be configured to periodically draw fluid from vasculature through a proximal intravascular opening and the proximal port while maintaining a low pressure and/or flow rate to thereby reduce risk of reversing the fluid flow in a vessel and drawing infusates upstream into another intravascular opening.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: May 26, 2020
    Assignee: OptiScan Biomedical Corporation
    Inventors: Eugene Lim, Roger Tong, Peter Rule, James R. Braig, Richard Keenan, David N. Callicoat
  • Patent number: 10526239
    Abstract: A highly purified quartz powder having a low level of naturally occurring lithium modified for cladding a fiber optic cable, said modified quartz powder having an increased total amount of lithium in solid solution in said powder, said increased total amount being in the range of more than 0.50 ppm and less than 1.00 ppm and a method of modifying an highly purified quartz powder to make the same.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: January 7, 2020
    Assignee: SIBELCO NORTH AMERICA, INC.
    Inventors: Paul Calderone, Brian Mosher, Chris Capobianco
  • Patent number: 10201303
    Abstract: Systems and method are disclosed for determining a concentration of an analyte in a fluid (e.g., blood). The system can draw blood from a patient and deliver the blood to a sample cell. A particular component of the fluid (e.g., plasma) may be separated and/or positioned such that the concentration of the analyte is measured in the particular component of the fluid (e.g., plasma). The sample cell can include a sample container that has two window pieces. The system can have a fluid passage having a tip configured to mate with a multi-lumen catheter without leaking. The multi-lumen catheter can have proximal and distal ports. A fluid pressure system can be configured to periodically draw fluid from vasculature through a proximal intravascular opening and the proximal port while maintaining a low pressure and/or flow rate to thereby reduce risk of reversing the fluid flow in a vessel and drawing infusates upstream into another intravascular opening.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: February 12, 2019
    Assignee: OptiScan Biomedical Corporation
    Inventors: Eugene Lim, Roger Tong, Peter Rule, James R. Braig, Richard Keenan, David N. Callicoat
  • Patent number: 9554742
    Abstract: Systems and method are disclosed for determining a concentration of an analyte in a fluid (e.g., blood). The system can draw blood from a patient and deliver the blood to a sample cell. A particular component of the fluid (e.g., plasma) may be separated and/or positioned such that the concentration of the analyte is measured in the particular component of the fluid (e.g., plasma). The sample cell can include a sample container that has two window pieces. The system can have a fluid passage having a tip configured to mate with a multi-lumen catheter without leaking. The multi-lumen catheter can have proximal and distal ports. A fluid pressure system can be configured to periodically draw fluid from vasculature through a proximal intravascular opening and the proximal port while maintaining a low pressure and/or flow rate to thereby reduce risk of reversing the fluid flow in a vessel and drawing infusates upstream into another intravascular opening.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: January 31, 2017
    Assignee: OptiScan Biomedical Corporation
    Inventors: Eugene Lim, Roger Tong, Peter Rule, James R. Braig, Richard Keenan, David N. Callicoat
  • Patent number: 9556064
    Abstract: A method of making a strengthened glass article includes providing a flat glass article having a select contour and a glass surface covered by a protective coating layer. The protective coating layer is removed from the glass surface without touching the glass surface with any solid object. Immediately after the protective coating layer is removed from the glass surface, the flat glass article is subjected to an ion-exchange process to strengthen the flat glass article and improve the resistance of the flat glass article to subsequent damage.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: January 31, 2017
    Assignee: Corning Incorporated
    Inventors: Thomas George Capek, Gregory Scott Glaesemann, Jeffrey Todd Kohli
  • Patent number: 9190605
    Abstract: A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: November 17, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-nam Cha, Sung-min Kim, Jung-inn Sohn
  • Patent number: 8979999
    Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: March 17, 2015
    Assignee: Soraa, Inc.
    Inventor: Mark P. D'Evelyn
  • Patent number: 8834629
    Abstract: Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Grant
    Filed: March 1, 2010
    Date of Patent: September 16, 2014
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen
  • Patent number: 8653722
    Abstract: The present disclosure provides a manufacturing method of a quartz-crystal device, in which its lid and base is manufactured with smaller thermal expansion coefficient between AT-cut quartz-crystal wafer.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: February 18, 2014
    Assignee: Nihon Dempa Kogyo Co., Ltd.
    Inventor: Shuichi Mizusawa
  • Patent number: 8603242
    Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: December 10, 2013
    Inventors: Uri Cohen, Michael Roitberg
  • Patent number: 8574344
    Abstract: The present invention relates to template-free clathrasils whose framework comprises essentially SiO2, wherein the crystals of the clathrasils have the platelet-like morphology of a sheet silicate. The present invention further relates to a process for preparing these template-free clathrasils and also to their use as absorbent, as seed crystals for the synthesis of clathrasil membranes of the same zeolite type and in the form of dense layers which function as gas separation membranes having a molecular sieving action.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: November 5, 2013
    Assignee: BASF SE
    Inventors: Hartwig Voβ, Jörg Therre, Hermann Gies, Bernd Marler
  • Patent number: 8361224
    Abstract: The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution containing the colloidal nanoparticles when preparing the colloidal photonic crystals, a uniform volume contraction occurs due to the elasticity of the viscoelastic material even when a nonuniform volume contraction occurs while drying a dispersion medium in the colloidal solution. Thus, it is possible to prepare 2 or 3 dimensional colloidal photonic crystals of large scale with no defects in less time.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: January 29, 2013
    Assignee: LG Chem, Ltd.
    Inventors: Young-jun Hong, Sang-hyuk Im
  • Patent number: 8353985
    Abstract: A process for producing colloidal crystals immobilized with a polymer, comprising the steps of: preparing a monomer-dispersion in which colloidal crystals having a three-dimensionally ordered array state are formed by adding, to a monomer-containing liquid containing at least one kind of monomers, colloidal particles having an average particle size in a range from 0.01 ?m to 10 ?m and a degree of monodispersity expressed by a following equation (1) of 20% or below, [Degree of monodispersity (unit: %)]=([Standard deviation of particle size]/[Average particle size])×100??(1) and then by dispersing the colloidal particles so as to arrange the colloidal particles in a three-dimensionally ordered array state at which a reflection spectrum thereof exhibits a reflection peak; and obtaining the colloidal crystals immobilized with a polymer by polymerizing the monomers in the monomer-dispersion.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: January 15, 2013
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Hiroshi Nakamura, Masahiko Ishii
  • Patent number: 8257675
    Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: September 4, 2012
    Assignees: Tokyo Denpa Co., Ltd., Asahi Glass Company, Limited
    Inventors: Noriyuki Agata, Shinya Kikugawa, Yutaka Shimizu, Kazumi Yoshida, Masatoshi Nishimoto
  • Patent number: 8088221
    Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: January 3, 2012
    Inventor: Zalman M. Shapiro
  • Patent number: 8057596
    Abstract: Disclosed is a carbon-based composite particle for an electron emission source comprising: a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and a carbon-based material such as a carbon nanotube which is partially buried inside of the particle and which partially protrudes from the surface of the particle.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: November 15, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Tae-Ill Yoon, Jong-Woon Moon, Sung-Hee Cho, Sung-Kee Kang, Hun-Young Kim, Hyun-Jung Lee
  • Publication number: 20110197762
    Abstract: The present invention relates to template-free clathraslls whose framework comprises essentially SO2, wherein the crystals of the ciathrasils have the platelet-like morphology of a sheet silicate. The present invention further relates to a process for preparing these template-free clathrasils and also to their use as absorbent, as seed crystals for the synthesis of ciathrasil membranes of the same zeolite type and in the form of dense layers which function as gas separation membranes having a molecular sieving action.
    Type: Application
    Filed: September 28, 2009
    Publication date: August 18, 2011
    Applicant: BASF SE
    Inventors: Hartwig Voss, Jörg Therre, Hermann Gies, Bernd Marler
  • Patent number: 7981214
    Abstract: In the case of a device for the melting and/or crystallizing of non-ferrous metals, especially of silicon, provision is made, for improving the quality of the crystallized and block-shaped non-ferrous metal, for there to be arranged around a container for receiving the non-ferrous metal at least one controllable cooling element for the active removal of heat from the non-ferrous metal.
    Type: Grant
    Filed: March 11, 2006
    Date of Patent: July 19, 2011
    Assignee: Deutsche Solar GmbH
    Inventors: Armin Müller, Michael Ghosh, Jens Seidel, Bert Geyer
  • Patent number: 7892355
    Abstract: A high quality single-crystalline polyalkylthiophene structure can be easily prepared by the inventive method which comprises: (i) dissolving polyalkylthiophene in an organic solvent at a temperature ranging from 50 to 100° C., sequentially quenching the polyalkylthiophene solution at a temperature ranging from 25 to 40° C. and then at ?5 to 15° C., to obtain a self-seeding polyalkylthiophene solution; and (ii) applying the self-seeding polyalkylthiophene solution obtained in step (i) to one surface of a nano-template having a hydrophobic supramolecule coating layer formed thereon to induce self-assembly and crystallization of polyalkylthiophene on the surface.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: February 22, 2011
    Assignees: Postech Foundation, Postech Academy-Industry Foundation
    Inventors: Kilwon Cho, Do Hwan Kim
  • Patent number: 7850777
    Abstract: A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: December 14, 2010
    Assignee: Evident Technologies
    Inventors: Adam Peng, Margaret Hines, Susanthri Perera
  • Patent number: 7828895
    Abstract: The invention relates to a method of producing an optical element using a garnet single crystal for the purpose of providing an optical element with a reduced Pb content or from which Pb can preliminarily be removed completely. By growing a garnet single crystal by using a solution containing Na, Bi and B by the LPE process and thermally treating the garnet single crystal in reducing atmosphere prepared by using nitrogen gas and/or hydrogen gas, the resulting thermally treated garnet single crystal is used to prepare an optical element.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: November 9, 2010
    Assignee: TDK Corporation
    Inventor: Atsushi Ohido
  • Patent number: 7591896
    Abstract: Single, acentric, hexagonal, beryllium borate crystals having the formula Sr2Be2B2O7 and of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method. Alternate structures are formed by partially substituting the strontium ion with at least one other divalent metal ion.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: September 22, 2009
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen, Henry G. Giesber, III
  • Patent number: 7540917
    Abstract: Single, acentric, rhombohedral, potassium fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: June 2, 2009
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen, Henry G. Giesber, III
  • Patent number: 7527690
    Abstract: The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]?x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: May 5, 2009
    Assignee: Ibule Photonics Co., Ltd.
    Inventors: Sang-Goo Lee, Min-Chan Kim, Byung-Ju Choi, Min-Chul Shin, Su-Han Yu
  • Patent number: 7435295
    Abstract: The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: October 14, 2008
    Assignees: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Hisashi Minemoto, Isao Kidoguchi, Yasuhito Takahashi, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
  • Patent number: 7435296
    Abstract: The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: October 14, 2008
    Inventor: Chien-Min Sung
  • Patent number: 7410539
    Abstract: The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.
    Type: Grant
    Filed: December 11, 2003
    Date of Patent: August 12, 2008
    Assignees: Ammono Sp. z o.o., Nichia Corporation
    Inventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
  • Patent number: 7244471
    Abstract: A method and apparatus for surface treating metal pipes includes introducing a treatment liquid into a first distribution chamber having a flat bottom surface, and dropping the treatment liquid onto at least a portion of the outer peripheral surface of the metal pipe through a plurality of holes formed in the bottom surface of the first distribution chamber. Preferably, a distance between the bottom surface of the first distribution chamber and the metal pipe is maintained constant as the outer diameter of the pipe varies. The treatment liquid may be introduced into a second distribution chamber having a flat bottom surface, and the treatment liquid may then be introduced into the first distribution chamber through a plurality of holes formed in the bottom surface of the second distribution chamber. It is possible for the first distribution chamber to simultaneously drop the treatment liquid onto at least two metal pipes.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: July 17, 2007
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Takahiro Takano, Mituo Watanabe
  • Patent number: 7153360
    Abstract: A self-assembled photonic crystal is formed using a template made by nanoimprint lithography. A layer of imprintable material is deposited on a substrate, a pattern is imprinted in the imprintable material to form a template (the pattern of the template being adapted to substantially constrain colloidal particles to a predetermined lattice), and colloidal particles are introduced onto the template, substantially filling the predetermined lattice.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: December 26, 2006
    Assignee: Hewlett-Packard Development Company, LP.
    Inventors: Gregory S Herman, David Champion, James E. Ellenson
  • Patent number: 6238480
    Abstract: A method and apparatus for hydrothermally growing crystals in a pressure vessel containing feed crystals immersed in a mineralizing solution. The apparatus is disposed in the pressure vessel, above the mineralizing solution. The apparatus includes an enclosure having opposing major walls with passages extending therethrough. The enclosure completely surrounds a seed plate having opposing major faces. A restraining structure holds the seed plate within the enclosure such that the major faces of the seed plate are spaced inwardly from the major walls.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: May 29, 2001
    Assignee: Sawyer Research Products, Inc.
    Inventor: Vladimir A. Klipov
  • Patent number: 6048396
    Abstract: This invention provides a method for producing calcite-type calcium carbonate single crystal available for optical elements, which can be carried out under relatively low temperature and low pressure conditions. The crystal growth process which comprises; a first step of filling a sealed pressure container of an autoclave with solvent and calcium carbonate as a raw material for growth, a second step of dissolving the starting rate in the solvent under predetermined conditions of pressure and temperature, a third step of crystallizing the calcium carbonate on a seed crystal suspended in the upper portion of the pressure container, on account of the difference of solubility caused by temperature gradient in the container; the method is characterized by that the aqueous solution of ammonium salt of mono-carboxylic acid is used as the solvent.
    Type: Grant
    Filed: July 3, 1997
    Date of Patent: April 11, 2000
    Assignee: Toyo Denka Kogyo Co., Ltd.
    Inventors: Kazumichi Yanagisawa, Isao Matsushita
  • Patent number: 6017390
    Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.
    Type: Grant
    Filed: July 22, 1997
    Date of Patent: January 25, 2000
    Assignee: The Regents of the University of California
    Inventors: Deborah H. Charych, Amir Berman
  • Patent number: 6001171
    Abstract: ST-cut and AT-cut quartz seed bodies (18,40) for quartz crystal synthesis and method (100) for making the same are disclosed. An extended quartz seed body (18) having an angle of about 42.75.degree. rotated about a X axis (20) from a +Z axis (22) to a -Y axis (24) and defining a ST-cut is provided and a quartz crystal bar (32) is grown thereupon. Analogously, an extended quartz seed body (40) having an angle of about 35.25.degree. rotated about a X axis (20) from a +Z axis (22) to a -Y axis (24) and defining an AT-cut is provided and a quartz crystal bar (48) is grown thereupon. In each case, the subsequent quartz crystal bar (32,48) may be wafered parallel to the seed body (18,40) thereby; reducing waste (68), recovering the seed body (18,40) for reuse, producing wafers (70) without intervening seed portions, and increasing factory capacity.
    Type: Grant
    Filed: December 15, 1997
    Date of Patent: December 14, 1999
    Assignee: CTS Corporation
    Inventors: Joseph F. Balascio, Thien T. Nguyen, David J. Weary, Theodore E. Lind
  • Patent number: 5902396
    Abstract: Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof, an acidic mineralizer, and anhydrous ammonia to where the fill factor in the reaction vessel is 30-95%; sealing the reaction vessel to the outside atmosphere; heating the contents of the reaction vessel to a temperature of at least 300.degree. C. until single crystal materials visible to the eye form in the reaction vessel; cooling the contents of the reaction vessel; and extracting the single crystal materials from the reaction vessel.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: May 11, 1999
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Andrew P. Purdy
  • Patent number: 5714005
    Abstract: ST-cut and AT-cut quartz seed bodies (18,40) for quartz crystal synthesis and method for making the same are disclosed. An extended quartz seed body (18) having an angle of about 42.75.degree. rotated about a X axis (20) from a +Z axis (22) to a -Y axis (24) and defining a ST-cut is provided and a quartz crystal bar (32) is grown thereupon. Analogously, an extended quartz seed body (40) having an angle of about 35.25.degree. rotated about a X axis (20) from a +Z axis (22) to a -Y axis (24) and defining an AT-cut is provided and a quartz crystal bar (48) is grown thereupon. In each case, the subsequent quartz crystal bar (32,48) may be wafered parallel to the seed body (18,40) thereby; reducing waste (68), recovering the seed body (18,40) for reuse, producing wafers (70) without intervening seed portions, and increasing factory capacity.
    Type: Grant
    Filed: December 20, 1995
    Date of Patent: February 3, 1998
    Assignee: Motorola Inc.
    Inventors: Joseph F. Balascio, Thien T. Nguyen, David J. Weary, Theodore E. Lind
  • Patent number: 5533465
    Abstract: A seal apparatus is disclosed for sealing an outlet of a pressurized chamber from fluid loss from the chamber and contamination to the chamber. The apparatus includes certain combinations of (a) a chamber outlet structure; (b) a removable cover; (c) means for reversibly connecting the cover to the chamber outlet structure; and (d) a compressible self-energizing ring having a surface which consists essentially of a material selected from the group consisting of noble metals, noble metal alloys and polytetrafluoroethylene, which has a hardness selected to substantially avoid deformation when the cover is sealed to the chamber outlet structure.Also disclosed are certain pressure vessels for hydrothermal crystal growth using a crystal growth media, which comprise (a) a vessel base and (b) a removable vessel cover.
    Type: Grant
    Filed: January 20, 1995
    Date of Patent: July 9, 1996
    Assignee: E. I. Du Pont de Nemours and Company
    Inventors: August Ferretti, Oral R. Van Buskirk
  • Patent number: 5456204
    Abstract: The present invention is a filtering flow guide for hydrothermal reaction vessels--such as crystal growth apparatus--which improves crystal production efficiency and crystal quality without significantly slowing down flow velocities or crystal growth times. One embodiment of the flow guide fits inside a conventional hydrothermal autoclave for crystal growth, and includes at least one central inlet conduit by which crystal nutrient solution flows from the autoclave's dissolving zone into its growth chamber. A plurality of funnels encircle the inlet conduit, the funnels contiguous with each other along their lateral edges and with the inlet conduit's intake opening at the funnels' innermost edges. Each funnel may be substantially shaped as a hollow, inverted triangular pyramid with a nadir instead of an apex, the nadir opening into a filter-containing outlet.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: October 10, 1995
    Assignee: Alfa Quartz, C.A.
    Inventors: Vesselin S. Dimitrov, Navtej S. Saluja, Alfredo Riviere V.
  • Patent number: 3933745
    Abstract: Imide copolymers consisting essentially of at least ##SPC1## of recurring units of the formula ##SPC2##Together with recurring units of the formula:In which M represents an aliphatic, aromatic, carbocyclic or heterocyclic divalent radical and R represents a tetravalent aromatic radical are provided having special utility as adhesives for polyimide and polyimide-amide films.
    Type: Grant
    Filed: October 24, 1972
    Date of Patent: January 20, 1976
    Assignee: Rhone-Poulenc S.A.
    Inventors: Michel Bargain, Maurice Ducloux