Having Growth From A Solution Comprising A Solvent Which Is Liquid At Or Below 20 Degrees Celsius (e.g., Aqueous Solution) Patents (Class 117/68)
  • Patent number: 10384947
    Abstract: A method for preparing a thin or thick film, including the aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that an a-axis, a b-axis, and/or a c-axis are oriented according to a certain rule; and exposing the aligned seed crystals to a solution for enabling the growth of the seed crystals to thereby form and grow a film from the seed crystals using a secondary growing technique.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: August 20, 2019
    Assignee: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Kyung Byung Yoon, Cao Thanh Tung Pham, Hyun Sung Kim
  • Patent number: 10319930
    Abstract: Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: June 11, 2019
    Assignees: LG DISPLAY CO., LTD., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyu-Nam Kim, So-Mang Kim, Duk-Young Jeon, Yong-Hee Lee
  • Patent number: 10272384
    Abstract: A sorbent in the form of a layered, non-porous perovskite is provided, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. Furthermore, each organic layer can be sandwiched between inorganic layers. Methods for capturing one or more halogens from a gas stream are also provided, wherein the methods can include contacting a gas stream with a sorbent in the form of a layered, non-porous perovskite, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. One or more halogens in the gas stream can react with either alkyne groups or alkene groups found in the organic layer of the sorbent.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: April 30, 2019
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Hemamala I. Karunadasa, Diego Solis-Ibarra
  • Patent number: 10214835
    Abstract: A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm2, the method comprising: (a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation being no more than 5 ?m; (b) analyzing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and (c) selectively processing over only the protruding regions on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: February 26, 2019
    Assignee: Element Six Technologies Limited
    Inventors: Gerrit Jan Pels, Hendrikus Gerardus Maria De Wit, Mark Robin McClymont
  • Patent number: 10177264
    Abstract: A method for transferring an assembly of oriented nanowires from a liquid interface onto a surface including providing a first liquid and a second liquid, wherein the first and second liquids phase separate into a bottom phase, a top phase and an interface between the bottom phase and the top phase, providing nanowires in the first and second liquids such that the majority of the nanowires are located at the interface and providing the nanowires onto a substrate such that a majority of the nanowires are aligned with respect to each other on the substrate.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: January 8, 2019
    Assignee: SOL VOLTAICS AB
    Inventors: Umear Naseem, Johan Borgström, Jaime Castillo-Léon, Per Viklund
  • Patent number: 10147603
    Abstract: In a method of fabricating a field effect transistor, a Mo layer is formed on the substrate. The Mo layer is sulfurized to convert it into a MoS2 layer. Source and drain electrodes are formed on the MoS2 layer. The MoS2 layer is treated with low-power oxygen plasma. A gate dielectric layer is formed on the MoS2 layer. A gate electrode is formed on the gate dielectric layer. An input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: December 4, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yen Lin, Chi-Wen Liu, Si-Chen Lee, Chong-Rong Wu, Kuan-Chao Chen
  • Patent number: 10096743
    Abstract: Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: October 9, 2018
    Assignee: Unique Materials Co., Ltd.
    Inventors: Pi-Tai Chou, Shang-Wei Chou, Yu-Min Lin, Chin-Cheng Chiang, Chia-Chun Hsieh
  • Patent number: 10087504
    Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: October 2, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Justin W. Kamplain, Keeve Gurkin, Peter Allen
  • Patent number: 10076866
    Abstract: A method of forming a film of photonic crystal material. A first process is performed upon a material capable of having a photonic crystal structure, this process causing deformation of the material so as to form a film in which incident light received by the material is selectively reflected or transmitted to generate a first optical effect in the film. A second process is performed upon substantially all of the film which applies a shear stress to the film. This causes a change in the material structure so as to generate a second optical effect in the film, different from the first optical effect, in response to incident light. Security films, devices, articles and documents formed using the method are also discussed.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: September 18, 2018
    Assignee: DE LA RUE INTERNATONAL LIMITED
    Inventors: Günther Vulpius, Götz Peter Hellmann, Peter Wolfgang Andreas Spahn
  • Patent number: 9997706
    Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: June 12, 2018
    Assignee: SAMSUNG RESEARCH AMERICA, INC.
    Inventors: Justin W. Kamplain, Zhengguo Zhu
  • Patent number: 9816198
    Abstract: The present invention provides a method capable of stably producing a zinc oxide single crystal in which a large amount of dopant forms a solid solution at a high level of productivity and reproducibility without using a harmful substance. The method of the present invention comprises providing a raw material powder that is mainly composed of zinc oxide, comprises at least one dopant element selected from B, Al, Ga, In, C, F, Cl, Br, I, H, Li, Na, K, N, P, As, Cu, and Ag in a total amount of 0.01 to 1 at %, and is substantially free of a crystal phase other than zinc oxide, and injecting the raw material powder to form a film mainly composed of zinc oxide on a seed substrate comprising a zinc oxide single crystal and also to crystallize the formed film in a solid phase state.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: November 14, 2017
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Katsuhiro Imai
  • Patent number: 9776184
    Abstract: A device for passing a biopolymer molecule includes a nanochannel formed between a surface relief structure, a patterned layer forming sidewalls of the nanochannel and a sealing layer formed over the patterned layer to encapsulate the nanochannel. The surface relief structure includes a three-dimensionally rounded surface that reduces a channel dimension of the nanochannel at a portion of nanochannel and gradually increases the dimension along the nanochannel toward an opening position, which is configured to receive a biopolymer.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: October 3, 2017
    Assignee: International Business Machines Corporation
    Inventors: Qinghuang Lin, Gustavo A. Stolovitzky, Chao Wang, Deqiang Wang
  • Patent number: 9771263
    Abstract: The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: September 26, 2017
    Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
    Inventors: Boaz Pokroy, Anastasia Brif
  • Patent number: 9653655
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: May 16, 2017
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Jin Hyeok Kim, MaryAnn E. Lange
  • Patent number: 9637840
    Abstract: This invention provides a process for increasing the crystallinity of at least one solid material which is less than 100% crystalline, comprising contacting said solid material with solvent in which the solid material is insoluble or poorly soluble (a non-solvent); and applying ultrasound to the solid material when in contact with said non-solvent.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: May 2, 2017
    Assignee: Prosonix Limited
    Inventors: Graham Ruecroft, Dipesh Parikh, David Hipkiss
  • Patent number: 9610612
    Abstract: A method is disclosed for synthesis of nanoparticles of metal selenide, metal selenide alloys, metal chalcogenide comprising at least selenium or metal chalcogenide alloys comprising at least selenium. The method comprises obtaining a heterogeneous dispersion of powder at least selenium in a first solvent at a first temperature, the first temperature being such that the heterogeneous dispersion comprises at least a fraction of undissolved powder in the solvent. The method also comprises introducing the heterogeneous dispersion into a second solvent containing a metal cation precursor, the second solvent being at a second temperature higher than said first temperature allowing, upon introduction of the heterogeneous dispersion, dissolution of at least the fraction of the power resulting in nucleation of the nanoparticles. The method results in efficient and easy production of nanoparticles.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: April 4, 2017
    Assignee: UNIVERSITEIT GENT
    Inventors: Zeger Hens, Stijn Flamee
  • Patent number: 9469673
    Abstract: The present invention features crystalline forms of Compound I. In one embodiment, a crystalline form of Compound I has characteristic peaks in the PXRD pattern at values of two theta (° 2?) of 10.7, 11.6, 12.7, 13.0, 13.2, 13.7, 14.5, 18.7, 19.0, and 19.9 after equilibration at 43% relative humidity.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: October 18, 2016
    Assignee: AbbVie Inc.
    Inventors: Ahmad Y. Sheikh, Moiz Diwan, Agnes E. Pal, Yuchuan Gong, Paul J. Brackemeyer, Geoff Zhang, Seble Wagaw
  • Patent number: 9446956
    Abstract: A method of purifying a nanodiamond powder includes preparing the nanodiamond powder, heating the nanodiamond powder at between 450° C. and 470° C. in an atmosphere including oxygen, performing a hydrochloric acid treatment on the heated nanodiamond powder, and performing a hydrofluoric acid treatment on the nanodiamond powder obtained after performing the hydrochloric acid treatment.
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: September 20, 2016
    Assignees: The Arizona Board of Regents on Behalf of the University of Arizona, Canon Kabushiki Kaisha
    Inventors: Palash Gangopadhyay, Robert A. Norwood, Alexander Ashton Miles, Jun Kato, Shabnam Virji, Mamoru Miyawaki
  • Patent number: 9396812
    Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: July 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Seiko Amano, Kouhei Toyotaka, Hiroyuki Miyake, Aya Miyazaki, Hideaki Shishido, Koji Kusunoki
  • Patent number: 9376386
    Abstract: The present invention provides processes for making 2-((3R,5R,6S)-5-(3-chlorophenyl)-6-(4-chlorophenyl)-1-((S)-1-(isopropylsulfonyl)-3-methylbutan-2-yl)-3-methyl-2-oxopiperidin-3-yl)acetic acid as well as intermediates and processes for making the intermediates. Also provided are crystalline forms of the compound and the intermediates.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: June 28, 2016
    Assignee: Amgen, Inc.
    Inventors: Matthew Bio, Sebastien Caille, Brian Cochran, Yuanqing Fang, Filisaty Vounatsos, Sarah Wortman
  • Patent number: 9352248
    Abstract: The present invention pertains to a method for loading a crystallization device and for manufacturing a crystallization device comprising multiple receptacles with a pre-defined amount of at least one matrix-forming compound capable of forming a crystallization matrix for a membrane protein, said method comprising the following steps: a) Modifying the state of aggregation of said at least one matrix-forming compound to a fluidic state which allows dispensing said at least one matrix-forming compound, and b) dispensing a defined amount of said at least one matrix-forming compound into at least one receptacle of the crystallization device, wherein said dispensed matrix-forming compound solidifies within said receptacle. Thereby, pre-filled crystallization devices are obtained which can be used as consumables in particular in automated crystallization processes. Also provided are protein crystallization methods using respectively prepared crystallization devices.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: May 31, 2016
    Assignees: QIAGEN GmbH, CUBE BIOTECH GmbH
    Inventors: Johann Kubicek, Frank Schaefer, Joerg Labahn, Georg Bueldt
  • Patent number: 9346681
    Abstract: A method of synthesizing diamond, the method comprising; (i) providing, in the presence of an atomic hydrogen plasma and/or in the presence of atomic hydrogen radicals, in a dissolution zone a liquid metal saturated with carbon with respect to graphite precipitation; (ii) transferring at least a portion of the liquid metal from the dissolution zone to a deposition zone, (vi) exposing the liquid metal in the deposition zone to atomic hydrogen plasma and/or to atomic hydrogen radicals, the temperature of the liquid metal in the deposition zone being lower than the temperature of the liquid metal in the dissolution zone such that the liquid metal in the deposition zone is saturated, preferably supersaturated, with carbon with respect to diamond precipitation; (vii) precipitating carbon from the liquid metal in the deposition zone to synthesize diamond; and (viii) optionally removing the synthesized diamond from the metal.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: May 24, 2016
    Assignee: DESIGNED MATERIALS LIMITED
    Inventors: A. Marshall Stoneham, Doreen Stoneham, Philip H. Taylor
  • Patent number: 9346685
    Abstract: A method is provided for producing separated substances, particularly metal compounds, the dopant element amounts of which have been controlled by the use of an apparatus that processes fluid between the processing surfaces of a processing member that can be made to approach/separate and which rotate relative to each other. The substance to be separated is separated by mixing a raw material solution, wherein the substance to be separated is solubilized in a solvent, with the solvent for separation and with the dopant element or dopant element-containing substance solubilized in at least one solvent selected from the solvent of said raw material solution, said solvent for separation or a solvent other than that of said raw material solution or said solution for separation. Separated substances with controlled dopant element amounts are obtained by controlling the solubility of the dopant element or dopant element-containing substance in the solvent for separation.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: May 24, 2016
    Assignee: M. TECHNIQUE CO., LTD.
    Inventor: Masakazu Enomura
  • Patent number: 9334440
    Abstract: A process of synthesizing nanocrystals, the process including contacting a first precursor, a ligand compound, and a second precursor in a solvent having a boiling point of less than or equal to about 150° C. and a polarity index of less than or equal to 5, and performing a thermal decomposition reaction between the first precursor and the second precursor at a higher pressure than atmospheric pressure and at a higher temperature than a boiling point of the solvent, wherein at least one of the first precursor and the second precursor is a metal-containing precursor.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: May 10, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo Jang, Hyo Sook Jang, Won Joo Lee
  • Patent number: 9305778
    Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: April 5, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun Park, Jung-inn Sohn, Seung-nam Cha, Ji-yeon Ku
  • Patent number: 9305715
    Abstract: A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: April 5, 2016
    Assignee: Hunt Energy Enterprises LLC
    Inventors: Michael D. Irwin, Jerred A. Chute, Vivek V. Dhas
  • Patent number: 9296042
    Abstract: A process for preparing a composition of mixed crystalline particles from columns 13-15 in which a liquid solution is produced by solubilization in a non-aqueous solvent medium of at least one first precursor chosen from coordination complexes including at least one element E1 from column 13, then the liquid solution is brought into contact with at least one second precursor chosen from the hydrides of at least one element E2 from column 15.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: March 29, 2016
    Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.)
    Inventors: Myrtil Kahn, Sebastien Graule, Gregory Spataro
  • Patent number: 9244029
    Abstract: The use of a vapor source (10) in an isothermal system (8) to control the crystallization or recrystallization of a sample of solid material (9) which is initially at least partially amorphous and/or at least partially crystalline and contained within the system (8), the vapor source (10) including at least one solvent for crystallizing the solid material, the vapor diffusion (14) of which leads to the crystallization or recrystallization of the sample (9), the vapor source (10) being such that the quantities of heat exchanged within the system during the crystallization or recrystallization of the sample (9) other than the heat of crystallization or recrystallization of the sample are less than approximately 10%, particularly 5%, and advantageously 1% of the heat of crystallization or recrystallization of the sample. The vapor source (10) is preferably a pure solvent or a solvent mixture in which no solute is dissolved.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: January 26, 2016
    Assignee: UNIVERSITE JOSEPH FOURIER
    Inventors: Nawale Khalef, Aziz Bakri
  • Patent number: 9205423
    Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: December 8, 2015
    Assignees: California Institute of Technology, The Regents of the University of California
    Inventors: Carl L. Hansen, Stephen R. Quake, James M. Berger
  • Patent number: 9163324
    Abstract: A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: October 20, 2015
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hideo Fujisawa, Yutaka Mikawa, Kazunori Kamada
  • Patent number: 9157167
    Abstract: A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: October 13, 2015
    Assignee: Soraa, Inc.
    Inventors: Rajeev T. Pakalapati, Mark P. D'Evelyn
  • Patent number: 9157170
    Abstract: A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3:1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: October 13, 2015
    Assignee: Element Six Technologies Limited
    Inventors: Daniel James Twitchen, Harpreet Kaur Dhillon, Geoffrey Alan Scarsbrook
  • Patent number: 9129720
    Abstract: This invention provides non-spherical nanoparticle compositions that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: September 8, 2015
    Assignee: William Marsh Rice University
    Inventors: Subashini Asokan, Michael Sha-nang Wong
  • Patent number: 9090480
    Abstract: A process for preparing various morphology NTE compound ZrW0.5Mo1.5O8 comprising: preparing 0.4M Zr4+ solution, 0.2M W6+ solution and 0.6M Mo6+ solution with zirconyl nitrate, ammonium tungstate and ammo-nium molybdate separately, mixing them with the same volume and stirring until they are mixed well, adding 6-12M hydrochloric acid with the volume of 1/5-1/7 of the mixed solution, or adding 6-12M hydrochloric acid with the volume of 1/3-1/5 of the mixed solution and 0.2-0.4 wt % ammonium monoacid phosphate of all raw materials, or adding 9-18M sulfuric acid with the volume of 1/10-1/5 of the mixed solution, well mixing, transferring the mixed solution into the hydrothermal reactor, reacting at 150-180° C. for 8-25 hours, washing, drying and getting the precursor, heating the precursor at 480-500° C. for more than 5 hours and obtaining the product is provided.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: July 28, 2015
    Assignee: JIANGSU UNIVERSITY
    Inventors: Xiaonong Cheng, Juan Yang, Qinqin Liu, Xiujuan Sun, Guifang Xu
  • Patent number: 9085459
    Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.
    Type: Grant
    Filed: October 27, 2009
    Date of Patent: July 21, 2015
    Assignee: INTELLECTUAL DISCOVERY CO., LTD
    Inventors: Sohee Jeong, Chang-soo Han, Won-sik Seo
  • Patent number: 9057705
    Abstract: A surface-enhanced Raman spectroscopy (SERS) substrate formed from a plurality of monolayers of polyhedral silver nanocrystals, wherein at least one of the monolayers has polyvinypyrrolidone (PVP) on its surface, and thereby configured for sensing arsenic is described. Highly active SERS substrates are formed by assembling high density monolayers of differently shaped silver nanocrystals onto a solid support. SERS detection is performed directly on this substrate by placing a droplet of the analyte solution onto the nanocrystal monolayer. Adsorbed polymer, polyvinypyrrolidone (PVP), on the surface of the nanoparticles facilitates the binding of both arsenate and arsenite near the silver surface, allowing for highly accurate and sensitive detection capabilities.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: June 16, 2015
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Peidong Yang, Martin Mulvihill, Andrea R. Tao, Prasert Sinsermsuksakul, John Arnold
  • Patent number: 9034463
    Abstract: An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the above-described high-quality BNA single crystal. Specifically, the present invention provides a BNA crystal characterized by having a half-value width of diffraction peak X-ray intensity of 100 seconds or less in a rocking curve measurement by X-ray diffraction method.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: May 19, 2015
    Assignee: RIKEN
    Inventors: Mikiko Saito, Takashi Notake, Hiroaki Minamide, Hiromasa Ito
  • Publication number: 20150128848
    Abstract: A method of preparing nanostructured single crystal silver, comprising placing a high-conductive molded porous active carbon containing chloride ions, which has been reductively treated, into a silver-containing precursor solution. After several hours at room temperature, the nanostructured single crystal silver grows on the surface of the active carbon. The silver-containing precursors and appropriate amount of chlorine provide a crystal nucleus and a slow stable crystal growth environment which are required for single crystal silver growth, and said nanostructured silver single crystals could be obtained with various morphologies by controlling the concentration of the silver-containing precursor solution and the growth time.
    Type: Application
    Filed: November 12, 2013
    Publication date: May 14, 2015
    Applicants: Shanghai Switchdiy Digital Technology Co., Ltd., Shanghai Jiao Tong University
    Inventors: BINYUAN ZHAO, HONG ZHAO, FEI WANG, YIJIAN LAI, YUESHENG NING, LEI WANG, JIE ZHOU
  • Patent number: 9017477
    Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: April 28, 2015
    Assignees: Nagoya City University, Fuji Chemical Co., Ltd.
    Inventors: Junpei Yamanaka, Mariko Shinohara, Akiko Toyotama, Koki Yoshizawa, Sachiko Onda, Masakatsu Yonese, Fumio Uchida
  • Patent number: 9017632
    Abstract: A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post-irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT]×L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in color. Fancy pale blue diamonds are also described.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: April 28, 2015
    Assignee: Element Six Technologies Limited
    Inventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins
  • Publication number: 20150108064
    Abstract: The present invention relates to channel type cyclodextrin crystals, particularly channel type ?-cyclodextrin crystals, to a method for producing channel type cyclodextrin crystals, and products comprising channel type cyclodextrin crystals.
    Type: Application
    Filed: March 13, 2013
    Publication date: April 23, 2015
    Inventors: Kim Lambertsen Larsen, Ronnie Nielsen, Thuy Thanh Do
  • Patent number: 9011715
    Abstract: A colloidal material and a process for manufacturing it and uses of the colloidal material for manufacturing optic devices. The colloidal material is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table; X is a metal selected from groups V or VI; and in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and n and m are such that AnXm is a neutral compound. The colloidal compound may be CdS, InP, or PbS. The process includes a step of solution phase decomposition of a mixture of X and a carboxylate of formula A(R—COO)p in the presence of a non- or weakly-coordinating solvent, and injecting an acetate salt or acetic acid in the mixture; wherein p is an integer between 1 and 2; R is a linear or branched C1-30alkyl group.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: April 21, 2015
    Assignee: Nexdot
    Inventors: Benoit Dubertret, Sandrine Ithurria
  • Patent number: 8986645
    Abstract: A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: March 24, 2015
    Assignee: Element Six Limited
    Inventors: Daniel James Twitchen, Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Paul Martyn Spear, Stephen David Williams, Ian Friel
  • Patent number: 8986447
    Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: March 24, 2015
    Assignee: Soraa, Inc.
    Inventor: Mark P. D'Evelyn
  • Patent number: 8979999
    Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: March 17, 2015
    Assignee: Soraa, Inc.
    Inventor: Mark P. D'Evelyn
  • Patent number: 8963146
    Abstract: By using a coating method, which is a method of manufacturing a transparent conductive film, with low-temperature heating lower than 300° C., a transparent conductive film with excellent transparency, conductivity, film strength, and resistance stability and a method of manufacturing this film are provided. In the method of manufacturing a transparent conductive film, a heat energy ray irradiating step is a step of irradiating with the energy rays while heating under an oxygen-containing atmosphere to a heating temperature lower than 300° C. to form the inorganic film, and the plasma processing step is a step of performing the plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature lower than 300° C. to promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles having a metal oxide as a main component.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: February 24, 2015
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Masaya Yukinobu, Yuki Murayama, Takahito Nagano, Yoshihiro Otsuka
  • Patent number: 8961828
    Abstract: The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: February 24, 2015
    Assignee: The Regents of the University of California
    Inventors: Raffaella Buonsanti, Delia J. Milliron
  • Publication number: 20150047555
    Abstract: Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution.
    Type: Application
    Filed: August 15, 2013
    Publication date: February 19, 2015
    Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Xudong WANG, Fei WANG, Alexander V. KVIT
  • Publication number: 20150044815
    Abstract: Provided are a method of manufacturing a metal oxide and a substrate for a solar cell. The method of manufacturing the metal oxide according to the inventive concept includes mixing a metal precursor material, a basic material, amphiphilic molecules and distilled water to prepare a metal precursor solution, performing a first heat treatment with the metal precursor solution to form a metal oxide, and performing a second heat treatment with the metal oxide to form a pair of metal oxide disks having a single crystalline structure. A pair of zinc oxide disks includes a first disk, and a second disk separated from the first disk in a perpendicular direction to the first disk.
    Type: Application
    Filed: March 14, 2014
    Publication date: February 12, 2015
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Mi Hee Jung, Moo Jung Chu
  • Patent number: 8945303
    Abstract: The subject is providing a crystallizing device of a biopolymer, which made to form biopolymer crystal efficiently in crystallization solution of a small amount of biopolymers by applying a low voltage and not to make an electrode disturb but observable a state of crystal formation. As an electrode for applying an electric field to a biopolymer solution, a transparent conductor, which does not disturb crystal formation, is used. Between the transparent conductor electrodes 2s, the electric insulating member 4 is placed and the crystallization solution 1 for a small amount of biopolymers is maintained inter-electrode. A biopolymer is efficiently crystallized by applying a low voltage supplied from the voltage generator 5 to the transparent conductor electrode 2. A crystal formation state of a biopolymer is optically observable from the electrode side of a transparent conductor. Orientation control of the biopolymer can be performed by an electric field formed by the above-mentioned voltage application.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: February 3, 2015
    Assignee: Institute of National Colleges of Technology, Japan
    Inventors: Takashi Wakamatsu, Yuki Ohnishi