Unusable Portion Contains An Oxygen Atom (e.g., Oxide Flux) Patents (Class 117/80)
-
Patent number: 11124892Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: May 22, 2020Date of Patent: September 21, 2021Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
-
Patent number: 10697085Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: October 15, 2018Date of Patent: June 30, 2020Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
-
Patent number: 10392722Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: August 24, 2017Date of Patent: August 27, 2019Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
-
Patent number: 10125432Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: March 20, 2017Date of Patent: November 13, 2018Assignee: CRYSTAL IS , INC.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
-
Patent number: 9771666Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: April 13, 2015Date of Patent: September 26, 2017Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
-
Patent number: 9670591Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: August 13, 2014Date of Patent: June 6, 2017Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
-
Patent number: 9624601Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: August 13, 2014Date of Patent: April 18, 2017Assignee: CRYSTAL IS, INC.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
-
Patent number: 8834630Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: November 6, 2012Date of Patent: September 16, 2014Assignee: Crystal IS, Inc.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo Schowalter, Glen A. Slack
-
Patent number: 8815011Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3-x-y-z<2.5, and 0?w?1.6).Type: GrantFiled: August 27, 2010Date of Patent: August 26, 2014Assignee: TDK CorporationInventor: Atsushi Ohido
-
Publication number: 20140205527Abstract: A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal.Type: ApplicationFiled: May 16, 2012Publication date: July 24, 2014Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Ryoichi Nakamura, Motoichi Murakami, Takehiro Miyaji
-
Patent number: 8512470Abstract: A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.Type: GrantFiled: April 8, 2011Date of Patent: August 20, 2013Assignee: China Crystal Technologies Co. LtdInventor: Meng Zhu
-
Patent number: 8506705Abstract: A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.Type: GrantFiled: September 9, 2009Date of Patent: August 13, 2013Assignee: NGK Insulators, Ltd.Inventors: Mikiya Ichimura, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka
-
Patent number: 8323406Abstract: Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.Type: GrantFiled: January 17, 2008Date of Patent: December 4, 2012Assignee: Crystal IS, Inc.Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
-
Publication number: 20120111265Abstract: A nonlinear optical crystal having a chemical formula of YiLajAlkB16O48, where 2.8?i?3.2, 0.8?j?1.2, i and j sum to about four, and k is about 12 is provided. The nonlinear optical crystal is useful for nonlinear optical applications including frequency conversion. Nonlinear optical crystals in a specific embodiment are characterized by UV blocking materials (e.g., some transition metals and lanthanides) at concentrations of less than 1,000 parts per million, providing high transmittance over portions of the UV spectrum (e.g., 175-360 nm).Type: ApplicationFiled: October 10, 2011Publication date: May 10, 2012Applicant: Deep Photonics CorporationInventor: Theodore Alekel
-
Patent number: 8012256Abstract: Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of fabricating a quasi-substrate wafer, a growth substrate water is fabricated that is provided with a separation zone and comprises the desired material of the growth layer. The growth substrate wafer is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main race of the growth substrate water and/or the separation zone, to a plurality of subregions along the first main face. The growth substrate wafer with separation zone exhibits no or only slight bowing.Type: GrantFiled: January 30, 2007Date of Patent: September 6, 2011Assignee: Osram Opto Semiconductor GmbHInventors: Georg BrĂ¼derl, Christoph Eichler, Uwe Strauss
-
Patent number: 7713352Abstract: A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.Type: GrantFiled: September 14, 2006Date of Patent: May 11, 2010Assignee: University of Louisville Research Foundation, Inc.Inventors: Mahendra Kumar Sunkara, Shashank Sharma, Hari Chandrasekaran, Hongwei Li, Sreeram Vaddiraju
-
Patent number: 7708831Abstract: A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.Type: GrantFiled: February 28, 2007Date of Patent: May 4, 2010Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hideyuki Sekiwa, Jun Kobayashi, Miyuki Miyamoto
-
Patent number: 6767401Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.Type: GrantFiled: January 16, 2003Date of Patent: July 27, 2004Assignee: Neuro Probe IncorporatedInventor: Richard H. Goodwin, Jr.
-
Patent number: 5879590Abstract: A method for forming relatively large and inexpensive crystals of KTiOPO.sub.4, which exhibit relatively low conductivities, is disclosed. In addition, electro-optic devices based on such crystals are also disclosed.Type: GrantFiled: July 13, 1990Date of Patent: March 9, 1999Assignee: North American Philips CorporationInventors: Gerard M. Blom, George Kostecky, Thomas F. McGee, Richard Stolzenberger, Gabriel M. Loiacono
-
Patent number: 5788945Abstract: The present invention relates to a process for removing impurities from molten silicon by treatment of molten silicon contained in a vessel with a slag having the capability of removing the impurities, particularly boron from molten silicon wherein slag is continuously or substantially continuously added to the molten silicon and that the slag is continuously or substantially continuously inactivated or removed from the silicon melt as soon as equilibrium between the slag and molten silicon is reached with respect to the impurity elements or element to be removed.Type: GrantFiled: May 8, 1997Date of Patent: August 4, 1998Assignee: Elkem ASAInventor: Anders Schei
-
Patent number: 5407858Abstract: To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga.sub.2 O.sub.3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, when forming the p-type GaP layer 3 doped with Zn and O, on said n-type GaP layer 2 by means of the liquid phase epitaxial growth method, the p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980.degree. C. or higher. When the temperature has reached the prescribed temperature of 980.degree. C.Type: GrantFiled: April 12, 1994Date of Patent: April 18, 1995Assignee: Shin-Etsu Handotai Co. Ltd.Inventors: Munehisa Yanagisawa, Yuuki Tamura, Susumu Arisaka, Hidetoshi Matsumoto
-
Patent number: 5366583Abstract: A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt. Then, a seed crystal of BaTiO.sub.3 is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 .degree. C. or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.Type: GrantFiled: October 8, 1992Date of Patent: November 22, 1994Assignee: Fujikura Ltd.Inventors: Akihito Kurosaka, Kazuhiko Tomomatu, Osamu Nakao, Shoji Ajimura, Haruo Tominaga
-
Patent number: 5334365Abstract: A flux process is disclosed for producing a single orthorhombic crystal of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm.sup.3. The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the melt; activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (including crystals at least about 5 mm.times.5 mm 5 mm) are also disclosed.Type: GrantFiled: May 26, 1992Date of Patent: August 2, 1994Assignee: E. I. Du Pont de Nemours and CompanyInventor: Lap K. Cheng
-
Patent number: 5326423Abstract: Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO.sub.4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO.sub.4, in an amount effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.Type: GrantFiled: September 30, 1992Date of Patent: July 5, 1994Assignee: E. I. Du Pont de Nemours and CompanyInventors: Albert A. Ballman, Lap K. Cheng
-
Patent number: 5322592Abstract: The invention provides a method of manufacturing potassium-lithium-niobate crystals having a composition which corresponds to the formula(K.sub.2 O).sub.0.3 (Li.sub.2 O).sub.0.2+a (Nb.sub.2 O.sub.5).sub.0.5+bwhere-0.01<a<0.01-0.005<b<0.005from a melt comprising potassium, lithium and niobium compounds. By adding a small quantity of vanadium, preferably in the form of V.sub.2 O.sub.5, considerably larger crystals are obtained. In addition, the homogeneity of these crystals is much better than that of the crystals obtained by the method according to the prior art.Type: GrantFiled: September 28, 1992Date of Patent: June 21, 1994Assignee: U.S. Philips CorporationInventors: Lucas J. A. M. Beckers, Johannes F. M. Cillessen, Martin Ouwerkerk