By Moving Zone (not Verneuil) {c30b 29/06} Patents (Class 117/933)
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Patent number: 11846037Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.Type: GrantFiled: March 23, 2022Date of Patent: December 19, 2023Assignee: TDK CORPORATIONInventors: Katsumi Kawasaki, Jun Arima, Minoru Fujita, Jun Hirabayashi
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Patent number: 11725299Abstract: A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.Type: GrantFiled: July 26, 2021Date of Patent: August 15, 2023Assignee: Novel Crystal Technology, Inc.Inventor: Kimiyoshi Koshi
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Patent number: 11434163Abstract: A variable seal for shielding from contaminants both an object to be heated in, and the heating element of, a high-temperature furnace. The seal has a first support ring and a second support ring separated by a distance. One or more components control the distance between the two support rings. A high-temperature fabric cylinder is attached to the support rings, is located where the object enters or exits the furnace, and surrounds at least a portion of the object. A mechanism engages the approximate center of the fabric cylinder to close the fabric cylinder as the one or more components decrease the distance between the two support rings and to open the fabric cylinder as the one or more components increase the distance between the two support rings, whereby the fabric cylinder continuously contacts the circumference of the object regardless of the diameter of the object.Type: GrantFiled: December 20, 2018Date of Patent: September 6, 2022Assignee: HERAEUS QUARTZ NORTH AMERICA LLCInventor: Carl W. Ponader
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Patent number: 8845805Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).Type: GrantFiled: February 14, 2008Date of Patent: September 30, 2014Assignee: Solarworld Industries Sachsen GmbHInventors: Christian Reimann, Jochen Friedrich, Marc Dietrich
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Patent number: 8673073Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.Type: GrantFiled: July 3, 2012Date of Patent: March 18, 2014Inventors: Masahiro Hoshino, Cheng C. Kao
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Patent number: 8257492Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.Type: GrantFiled: November 16, 2010Date of Patent: September 4, 2012Inventors: Masahiro Hoshino, Cheng C. Kao
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Patent number: 7828894Abstract: A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.Type: GrantFiled: November 2, 2005Date of Patent: November 9, 2010Assignee: LG Display Co., Ltd.Inventor: JaeSung You
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Patent number: 7479186Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.Type: GrantFiled: May 1, 2006Date of Patent: January 20, 2009Assignees: California Institute of Technology, Regents of the University of CaliforniaInventors: Stephen R. Quake, Carl L. Hansen, James M. Berger
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Patent number: 7431766Abstract: Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropriately changed thereby to establish the desired mechanical properties for a created device.Type: GrantFiled: September 14, 2005Date of Patent: October 7, 2008Assignee: Sharp Laboratories of America, Inc.Inventor: John W. Hartzell
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Patent number: 7384478Abstract: A process for preparing crystalline particles, especially particles of a pharmaceutical or carrier substance suitable for inhalation therapy, in addition to apparatus for the preparation of such particles.Type: GrantFiled: January 21, 2003Date of Patent: June 10, 2008Assignee: Glaxo Group LimitedInventor: Hardev Singh
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Patent number: 7112241Abstract: The present invention includes a microplate for performing crystallography studies. In particular, the microplate has a frame that includes a plurality of wells formed therein. Each well includes a first well and a second well. The first well includes a relatively large reservoir capable of receiving a reagent solution. The second well includes a relatively small reservoir having a substantially concaved form capable of receiving a protein solution and a reagent solution. The second well is suspended above the first well such that space on the plate is conserved and to enable protein crystal growth utilizing a hanging drop vapor diffusion crystallization process.Type: GrantFiled: October 27, 2003Date of Patent: September 26, 2006Assignee: Corning IncorporatedInventor: Ma Sha
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Patent number: 6921434Abstract: A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.Type: GrantFiled: October 3, 2003Date of Patent: July 26, 2005Assignee: Sharp Laboratories of America, Inc.Inventor: Apostolos Voutsas
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Patent number: 6660085Abstract: A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.Type: GrantFiled: March 21, 2001Date of Patent: December 9, 2003Assignee: Fujitsu LimitedInventors: Akito Hara, Kuninori Kitahara
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Patent number: 6645454Abstract: A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.Type: GrantFiled: June 28, 2001Date of Patent: November 11, 2003Assignee: Sharp Laboratories of America, Inc.Inventor: Apostolos Voutsas
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Patent number: 6113689Abstract: A method of crystallizing an amorphous silicon layer on a substrate includes the steps of irradiating the amorphous silicon layer by a laser beam positioned over the amorphous silicon layer and having a predetermined repeat rate, while simultaneously partially heating the laser-irradiated part of the amorphous silicon layer upwardly with an RTP, thus crystallizing the amorphous silicon by a laser without damaging the glass substrate by a high temperature.Type: GrantFiled: March 26, 1998Date of Patent: September 5, 2000Assignee: LG Electronics Inc.Inventor: Dae-Gyu Moon
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Patent number: 5972105Abstract: Thin-film transistors (TFTs) having characteristics comparable to those of a single-crystal silicon wafer are provided. A buffer film made from silicon oxide is formed on a first amorphous silicon film. A nickel acetate solution containing a metal element such as nickel for promoting crystallization of silicon is applied to the first amorphous silicon film. The laminate is heat-treated to form a nickel silicide layer. The nickel silicide layer is then patterned. A second amorphous silicon film is formed and heat-treated to grow crystals. Thus, monodomain regions which can be regarded as single crystals are formed. Active layers of TFTs are formed from these monodomain regions.Type: GrantFiled: September 14, 1995Date of Patent: October 26, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Naoto Kusumoto, Satoshi Teramoto
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Patent number: 5897705Abstract: A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.Type: GrantFiled: April 2, 1996Date of Patent: April 27, 1999Assignee: Wacker Siltronic Gesellschaft fur Halbeitermaterialien mbHInventors: Wolfgang Siebert, Erwin-Peter Mayer
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Patent number: 5893948Abstract: The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.Type: GrantFiled: April 5, 1996Date of Patent: April 13, 1999Assignee: Xerox CorporationInventors: Norbert H. Nickel, Gregory B. Anderson, Steven E. Ready, James B. Boyce, Ping Mei
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Patent number: 5499598Abstract: Silicon granules filled in a nonconductive cylinder are locally heated from outside of the cylinder using a local heating means, for example, a radio-frequency induction heating coil etc. to form a silicon granule sintering portion and a silicon melting portion, with gradually moving the local heating means in such a manner that the positions of the sintering portion and of the melting portion can be moved gradually. Concomitantly with the movement of the positions of the sintering portion and the melting portion, the melting portion in the original position is solidified to produce a silicon rod. According to this method, molten silicon is formed without contacting the inner wall surface of the cylinder and then solidified so that there can be obtained a silicon rod containing no impurities derived from the material of the cylinder.Type: GrantFiled: March 11, 1994Date of Patent: March 19, 1996Assignee: Tokuyama CorporationInventor: Hiroyuki Oda
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Patent number: 5490477Abstract: High purity semiconductor foils, such as silicon foils useful in solar energy cells, are produced by treating an impure semiconductor foil with at least one reactive gas while in the crystallizing state.Type: GrantFiled: September 23, 1993Date of Patent: February 13, 1996Assignee: Bayer AktiengesellschaftInventors: Philippe Knauth, Horst Lange, Ingo Schwirtlich, Karsten Wambach
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Patent number: 5322589Abstract: A process for recrystallizing a semiconductor layer including the steps of forming a polycrystalline or amorphous semiconductor layer on a substrate and scanning energy beam on the semiconductor layer, wherein the energy beam is vibrated substantially in parallel to the direction of advance of the scanning of the energy beam. For carrying out the process, the apparatus includes a sample stage for holding a sample having a polycrystalline or amorphous semiconductor layer, an energy beam source for generating energy beam, a scanning means for scanning the energy beam on the semiconductor layer, and a beam-vibrating means for vibrating the energy beam substantially in parallel to the direction of advance of the scanning of the energy beam.Type: GrantFiled: April 21, 1993Date of Patent: June 21, 1994Assignee: Fujitsu LimitedInventors: Hidesato Matsuoka, Kazuo Hashimi
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Patent number: 5308594Abstract: Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.Type: GrantFiled: September 10, 1992Date of Patent: May 3, 1994Assignee: Massachusetts Institute of TechnologyInventor: Chenson K. Chen