By Liquid Phase Epitaxy {c30b 29/06} Patents (Class 117/934)
-
Patent number: 8440017Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.Type: GrantFiled: August 12, 2011Date of Patent: May 14, 2013Assignee: NGK Insulators, Ltd.Inventors: Takanao Shimodaira, Takayuki Hirao, Katsuhiro Imai
-
Patent number: 7918934Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.Type: GrantFiled: November 29, 2006Date of Patent: April 5, 2011Assignee: Sumco Techxiv CorporationInventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
-
Patent number: 7118625Abstract: With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.Type: GrantFiled: October 2, 2003Date of Patent: October 10, 2006Assignee: Canon Kabushiki KaishaInventors: Shoji Nishida, Takehito Yoshino, Masaaki Iwane, Masaki Mizutani
-
Patent number: 7077901Abstract: A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.Type: GrantFiled: March 31, 2003Date of Patent: July 18, 2006Assignee: Canon Kabushiki KaishaInventors: Katsumi Nakagawa, Takao Yonehara, Kazuaki Ohmi, Shoji Nishida
-
Patent number: 6946029Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.Type: GrantFiled: February 25, 2004Date of Patent: September 20, 2005Assignee: Sharp Kabushiki KaishaInventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
-
Patent number: 6869863Abstract: Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.Type: GrantFiled: March 3, 2003Date of Patent: March 22, 2005Assignee: Canon Kabushiki KaishaInventor: Shoji Nishida
-
Patent number: 6468348Abstract: An open form is produced with a plurality of in each case two-dimensionally structured layers. The form is made of silicon which is etchable in dependence on its doping. A first silicon layer is first produced, and a portion of the first layer which belongs to the form to be produced, is marked by doping at least one zone of the first layer. Subsequently, at least one further silicon layer is applied, and a portion belonging to the form is also marked therein. Finally, every unmarked portion of the layers is removed by etching depending on the respective doping of each layer. The open form is, in particular, a photonic crystal.Type: GrantFiled: March 30, 2000Date of Patent: October 22, 2002Assignee: Infineon Technologies AGInventors: Ulrike GrĂ¼ning, Hermann Wendt, Volker Lehmann, Reinhard Stengl, Hans Reisinger
-
Patent number: 6387780Abstract: Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.Type: GrantFiled: September 18, 1997Date of Patent: May 14, 2002Assignee: Canon Kabushiki KaishaInventor: Shoji Nishida
-
Patent number: 6231667Abstract: A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber.Type: GrantFiled: November 27, 1998Date of Patent: May 15, 2001Assignee: Canon Kabushiki KaishaInventors: Masaaki Iwane, Isao Tanikawa, Katsumi Nakagawa, Tatsumi Shoji, Shoji Nishida, Noritaka Ukiyo
-
Patent number: 5544616Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.Type: GrantFiled: May 27, 1994Date of Patent: August 13, 1996Assignee: Midwest Research InstituteInventors: Theodore F. Ciszek, Tihu Wang
-
Patent number: 5503103Abstract: A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated. A concentration gradient of the layer-forming material is produced in a direction, perpendicular to the direction of the flow of the liquid. As a result, the concentration of the layer-forming material becomes a maximum at one side of the liquid.Type: GrantFiled: January 20, 1995Date of Patent: April 2, 1996Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenshaften e.V., BerlinInventors: Elisabeth Bauser, Mitsubaru Konuma
-
Patent number: 5425808Abstract: A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S.sub.NDL).Type: GrantFiled: October 29, 1993Date of Patent: June 20, 1995Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Tokunaga, Takao Yonehara
-
Patent number: 5397735Abstract: The invention relates to the "hardening" (resistance to ionizing radiations) of MOS-type components. In order to avoid the effects of these radiations (creation of electron-hole pairs), there is deposited on a substrate (1) of monocrystalline Si a layer of YSZ (2), and then a thin layer of monocrystalline Si (3). The other steps of production of the components are the same as conventional.Type: GrantFiled: July 27, 1990Date of Patent: March 14, 1995Assignee: Thomson-CSFInventors: Louis Mercandalli, Didier Pribat, Bernard Dessertenne, Leonidas Karapiperis, Dominique Dieumegard
-
Patent number: 5356509Abstract: A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.Type: GrantFiled: October 16, 1992Date of Patent: October 18, 1994Assignee: AstroPower, Inc.Inventors: Nancy Terranova, Allen M. Barnett
-
Patent number: 5314571Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.Type: GrantFiled: May 13, 1992Date of Patent: May 24, 1994Assignee: Midwest Research InstituteInventor: Theodore F. Ciszek
-
Patent number: 5310446Abstract: A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.Type: GrantFiled: July 13, 1992Date of Patent: May 10, 1994Assignee: Ricoh Company, Ltd.Inventors: Junichi Konishi, Kouichi Maari, Toshihiko Taneda, Akiko Kishimoto