Abstract: A ferromagnetic resonance (FMR) measurement method is disclosed wherein a magnetic film or stack of layers is patterned into elongated structures having a length along a long axis. A magnetic field (H) is applied in two different orientations with respect to the long axis (in-plane parallel and perpendicular to the long axis) or one orientation may be perpendicular-to-plane. In another embodiment, H is applied parallel to a first set of elongated structures with a long axis in the x-axis direction, and perpendicular to a second set of elongated structures with a long axis in the y-axis direction. From the difference in measured resonance frequency (?fr) (for a fixed magnetic field and sweeping through a range of frequencies) or the difference in measured resonance field (?Hr) (for a fixed microwave frequency and sweeping through a range of magnetic field amplitudes), magnetic saturation Ms is determined using formulas of demagnetizing factors.

Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 ?m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: Embodiments of a magneto-optic crystal assembly for use in polarization rotation applications are disclosed. In one aspect, a magneto-optic crystal assembly includes two or more magneto-optic crystals. The temperature and wavelength dependencies of Faraday rotation of these crystals are compensated so that the crystal assembly has both reduced temperature and wavelength dependencies of the polarization rotation angle over broad temperature and wavelength ranges.

Abstract: A solution-stirring top-seeded solution-growth method for forming CLBO of the type where water is added to a precursor mixture, where heavy water is substituted for the water.

Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3-x-y-z<2.5, and 0?w?1.6).

Abstract: A garnet-type single crystal is represented by a general formula, A3B2C3O12 (having a crystal structure with three sites A, B and C occupied by cations, wherein A represents an element occupying the site A, B represents an element occupying the site B, C represents an element occupying the site C, O represents an oxygen atom), and contains fluorine, in which the fluorine attains any one or both of substituting for the oxygen atom or compensating for oxygen defect.

Abstract: The invention relates to a magnetic garnet single crystal and an optical element using the same, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content, and an optical element using the same, where the magnetic garnet single crystal is represented by the chemical formula Bi?M13-?Fe5-?-?M2?M3?O12 (M1 is at least one element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is Si; and M3 is at least one element selected from Zn, Ni, Cu and Mg, provided that 0.5<??2.0, 0<?, and 0<y).

Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13?x?y?zFe5?wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3?x?y?z<2.5, and 0?w?1.6).

Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.

Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

Abstract: Disclosed is a luminescent material for scintillators, which comprises a single crystal of an Yb-containing mixed-crystal oxide having a base crystal consisting of a garnet single crystal or a borate single crystal. The oxide single crystal has a composition represented by either one selected from the group consisting of R3Al5O12, R3Ga5O12, Li6R(BO3)3, LaR2Ga3O12 and Gd3R2Ga3O12, wherein R is a mixture of Yb and either one of Y, Gd and Lu. The Yb as an element capable of forming an optically active state called CTS together with a neighboring negative ion (oxygen ion).

Abstract: There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by the method. A method of manufacturing an epitaxial silicon wafer having an ultra-thin epitaxial film, by means of forming an epitaxial film on a silicon wafer after having annealed the silicon wafer, includes the steps of: sufficiently smoothing COPs formed in the surface of the silicon wafer by means of appropriately setting annealing conditions according to an size of COPs in the vicinity of a surface of the silicon wafer; and forming an epitaxial film through epitaxial growth.

Abstract: A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powder supplied to the heat treatment area at temperatures required for single-crystallization of the powder to form a product, and a cooling step for cooling the product obtained in the heat treatment step to form single crystal ceramic powder. The method provides single crystal ceramic powder consisting of particles with a very small particle size and a sphericity being 0.9 or higher.

Abstract: The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.

Abstract: The present invention provides terbium or lutetium garnet x ray scintillators activated with a rare earth metal ion, such as cerium, and treated by annealing in a controlled atmosphere comprising a predetermined amount of oxygen for a predetermined time and temperature to reduce radiation damage that would otherwise occur when the scintillator material is exposed to high energy radiation, such as the type of radiation required to use the scintillator for medical radiographic imaging and the like. In an embodiment, a single crystal or a polycrystalline scintillator comprising the general formula (Tb1−xLuxCey)3Al5O12 (where 0<×≦0.5, and y is in the range from about 0.0005 to about 0.2, and annealed at 1400° C. to 1500° C. in a controlled atmosphere comprising 1×10−6 to 0.22 atm oxygen shows an increased resistance to radiation damage.

Abstract: A novel phosphor represented by the general formula (Gd1-y-zCeyScz)3Al5-dGadO12 (wherein y, z and d are values falling in the ranges of 0.0005≦y≦0.05, 0<z≦0.03 and 0<d<5) is provided by adding scandium (Sc) to a phosphor represented by the general formula of (Gd1-yCey)3Al5-dGadO12 (wherein y and d are values falling in the ranges of 0.0005≦y≦0.02 and 0<d<5). The phosphor has a high luminous efficiency and a very small afterglow. A radiation detector using this phosphor as ceramic scintillator is capable of obtaining a high luminous output and suitable for a radiation detector of X-ray CT because of its high luminous output and a very small afterglow.

Abstract: The present invention provides terbium or lutetium garnet x ray scintillators activated with a rare earth metal ion, such as cerium, and treated by annealing in a controlled atmosphere comprising a predetermined amount of oxygen for a predetermined time and temperature to reduce radiation damage that would otherwise occur when the scintillator material is exposed to high energy radiation, such as the type of radiation required to use the scintillator for medical radiographic imaging and the like. In an embodiment, a single crystal or a polycrystalline scintillator comprising the general formula (Tb1−xLuxCey)3Al5O12 (where 0<x≦0.5, and y is in the range from about 0.0005 to about 0.2, and annealed at 1400° C. to 1500° C. in a controlled atmosphere comprising 1×10−6 to 0.22 atm oxygen shows an increased resistance to radiation damage.

Abstract: A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

Abstract: A magnetooptical device which defines a Faraday rotation angle &thgr; expressed by 44 deg.≦&thgr;≦46 deg. when light having a wavelength &lgr; (1570 nm≦&lgr;≦1620 nm) impinges thereupon. A magnetic garnet material expressed by a general formula: BiaM13−a Fe5−bM2bO12 is used. M1 is at least one kind of element that is selected from among Y, La, Eu, Gd, Ho, Yb, Lu and Pb; M2 is at least one kind of element that is selected from among Ga, Al, Ti, Ge, Si and Pt; and a and b satisfy 1.0≦a≦1.5 and 0≦b≦0.5, respectively.

Abstract: An optical isolator comprsing at least two parts of a Faraday rotator obtained from a garnet crystal and an analyzer, which is small in size, can be mounted directly to a semiconductor laser. The garnet crystal is grown, by a liquid-phase epitaxial growth technique, on the substrate of a garnet with a lattice constant of 12.514±0.015 Å, and consists of the following composition formula: (Tb1−(a+b+c+d)LnaBibM1cEud)3(Fe1−eM2e)5O12 where Ln is an element selected from rare-earth elements excluding Tb and Eu, and Y; M1 is an element selected from elements Ca, Mg, and Sr; M2 is an element selected from elements of Al, Ga, Sc, In, Ti, Si, and Ge; a, b, c, d, and e are defined as 0≦a≦0.5, 0.3<b≦0.6, 0≦c≦0.02, 0<d≦0.3, and 0.01<e≦0.3, respectively.

Abstract: A method of producing a magnetic garnet single crystal film by a liquid phase epitaxial process, comprises the steps of: forming a platinum or platinum alloy film in any desired shape having any desired thickness on a nonmagnetic garnet single crystal substrate; and bringing the nonmagnetic garnet single crystal substrate into contact with a magnetic garnet raw material melt containing lead oxide as a flux to grow a magnetic garnet single crystal film on the nonmagnetic garnet single crystal substrate while removing the platinum or platinum alloy from the nonmagnetic garnet single crystal substrate with the flux.

Abstract: The present invention relates to a magnetooptical device utilizing a magnetooptical effect provided by using a magnetic garnet material, and provides a magnetic garnet material which is less likely to crack during the growth and lapping of the single crystal film. It is an object of the invention to provide a magnetooptical device which defines a Faraday rotation angle &thgr; expressed by 44 deg.≦&thgr;≦46 deg. when light having a wavelength &lgr; (1570 nm≦&lgr;≦1620 nm) impinges thereupon, in order to permit the suppression of and which is less likely to crack during processing to allow any reduction of yield. A magnetic garnet material expressed by a general formula: BiaM13-aFe5-bM2bO12 is used. M1 is at least one kind of element that is selected from among Y, La, Eu, Gd, Ho, Yb, Lu and Pb; M2 is at least one kind of element that is selected from among Ga, Al, Ti, Ge, Si and Pt; and a and b satisfy 1.0≦a≦1.5 and 0≦b≦0.5, respectively.

Abstract: An object is to provide a magnetic garnet material, even if a thickness of an element is made thin, in which a sufficient Faraday rotation capacity can be obtained, a magnetic field for saturation can be controlled to be less than 200 (Oe), and a magnetic compensation temperature can be controlled to be less than 0° C. as well as to provide a Faraday rotator which can be made thin, suppresses a manufacturing cost and achieves a high yielding. The above object can be achieved by a magnetic garnet material known as the general chemical formula BixYbyGdzM13-x-y-zFewM2uM35-w-uO12 and the Faraday rotator using the above material. However, M1 is more than one kind of chemical elements which can replace Bi, Yb or Gd, M2 is more than one kind of non-magnetic chemical elements which can replace Fe, and M3 is more than one kind of chemical elements which can replace Fe and M2. Further, x, y, z, w and u respectively satisfies 1.0≦x≦1.6, 0.3≦y≦0.7, 0.9≦z≦1.6, 4.0≦w≦4.3 and 0.7≦u≦1.0.

Abstract: A method for manufacturing a ferroelectric thin film having a layered perovskite crystal structure of the general formula: Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3, wherein A is selected from the group consisting of Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+ and Bi.sup.3+, B is selected from the group consisting of Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m represents an integer of 1 or larger, which comprises introducing into a film formation chamber where a substrate is set, gaseous starting materials inclusive of oxygen gas for forming the ferroelectric thin film in which the flow rate of oxygen gas as one component of the gaseous starting materials is controlled to an arbitrary value necessary for the formation of the ferroelectric thin film having a desired orientation while the pressure inside the film formation chamber and the total flow rate of the gaseous starting materials and an optionally introduced carrier gas are maintained constant.

Abstract: The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of the melt and the solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.

Abstract: A garnet crystal for growing a substrate is used in manufacturing a magneto-optic element. The garnet is manufactured by a Czochralski method and has a chemical structure represented by La.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The garnet crystal is grown from a melt prepared by heating a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible, the oxides being mixed together in a weight proportion such that the atomic proportion is La:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5.

Abstract: Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.

Abstract: A ceramic composite material consisting of two or more crystal phases of different components, each crystal phase having a non-regular shape, said crystal phases having three dimensional continuous structures intertwined with each other, at least one crystal phase thereof being a single crystal. Further, by removing at least one crystal phase from this ceramic composite material, there is provided a porous ceramic material consisting of at least one crystal phase and pores, said crystal phase and pores having non-regular shapes and being three dimensionally continuous and intertwined with each other.

Abstract: Novel Bi-layer Perovskite ferroelectrics constituted of BiO intermediate layers (17) and pseudo-Perovskite layers (18) stacked alternately are disclosed. The Bi-layer Perovskite ferroelectrics have such a crystal structure which has a fundamental skeleton composed of each intermediate layer (17) consisting of one BiO plane and each pseudo-Perovskite structure (18) consisting of Pb(Zr, Ti)O.sub.3. Since the intermediate layer (17) is constituted of the BiO layer, the ferroelectrics are more excellent in ferroelectric characteristics and thermodynamic stability than known Perovskite ferroelectrics comprising a Bi.sub.2 O.sub.2 layer.

Abstract: A garnet crystal for growing a substrate is used for manufacturing a magneto-optic element. The garnet crystal is grown by the Czochralski method and has a chemical structure represented by Gd.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The method of manufacturing the garnet crystal for growing a magneto-optic element includes the steps of: preparing a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible by mixing the oxides together in a weight ratio such that the atomic ratio is Gd:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5; heating the mixture to make a melt of the mixture; and growing a garnet from the melt of the mixture by the Czochralski method.

Abstract: A magnetostatic wave device comprises a magnetic single-crystal garnet and at least one element of the halogen group incorporated therein. A magnetostatic wave device comprises a thin magnetic garnet single-crystal film. The film consists essentially of yttrium-iron-garnet including at least one halogen element incorporated therein.

Abstract: A buffer layer having crystal orientation In a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature ranging from 20.degree. to 600.degree. C. and at a rate ranging from 0.5 to 50 .ANG./sec. The thus formed ferroelectric thin film has its axes of polarization aligned in one direction. Using the oriented ferroelectric thin-film device, highly functional nonvolatile memories, capacitors or optical modulators can be fabricated on semiconductor substrates.

Abstract: The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique.

Abstract: A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formulaGd.sub.a Ho.sub.b Eu.sub.d Bi.sub.3-a-b-d Fe.sub.5-c M.sub.c O.sub.12,in which M is an element or a combination of elements selected from the group consisting of aluminum, scandium, gallium and indium, the subscript a is a positive number in the range from 1.1 to 2.1, the subscript b is a positive number in the range from 0.1 to 0.9, the subscript c is 0 or a positive number not exceeding 0.5 and the subscript d is zero or a positive number not exceeding 0.6 or, in particular, in the range from 0.03 to 0.6 with the proviso that 3-a-b-d is in the range from 0.7 to 1.2.

Abstract: In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Abstract: A material for use in a 1.5 .mu.m wide-band optical isolator, includes a bismuth-substituted terbium-iron garnet single crystal having a composition of Bi.sub.x Tb.sub.3-x Fe.sub.5 O.sub.12 in which x is 0.35 to 0.45. This bismuth-substituted terbium-iron garnet single crystal is grown by a solid phase reaction. A process for producing such a material is also disclosed.

Abstract: A ceramic composite material consisting of single crystal .alpha.-Al.sub.2 O.sub.3 and single crystal Y.sub.3 Al.sub.5 O.sub.12 is provided. This composite material has high mechanical strength and creep behavior particularly at high temperatures.

Abstract: A material made of magnetic garnet single crystals has excellent characteristics particularly in a wavelength band of from 950 to 1070 nm, which is usable for a wavelength 980 nm for pumping light of erbium doped fiber amplifier, and for a wavelength of 1017 nm for pumping light of an praseodymium doped fiber amplifier. One example of the material is made of magnetic garnet single crystals expressed by a composition formula of Nd.sub.3-x Bi.sub.x Fe.sub.5 O.sub.12 (0.5.ltoreq.x.ltoreq.1.9), the single crystals being formed by liquid-phase epitaxial growth on a non-magnetic garnet substrate having a lattice constant <a> specified in the range of 12.61 .ANG..ltoreq.a.ltoreq.12.63 .ANG.. The material is suitably used for a magneto-optical element having a wavelength band from 950 to 1070 nm. The non-magnetic garnet substrate can be made of a material having a composition formula expressed by Gd.sub.3-y Nd.sub.y Sc.sub.2 Ga.sub.3 O.sub.12 (1.0.ltoreq.y.ltoreq.1.4).