Abstract: A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising—a compound of Chemical Formula 1 on the substrate: BapLaqSnmOn??Formula 1 wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and less than or equal to 6, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.

Abstract: Methods are provided for making halide perovskite thin films. The method may include forming a pattern of islands of a nucleation promoter material onto a substrate; applying onto the substrate and islands a solution which includes a halide perovskite or precursors thereof, to form a coated substrate; and drying the coated substrate to form a crystalline halide perovskite film. Halide perovskite thin films, which may be made by these methods, and LEDs including these films are also provided.

Abstract: When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.

Abstract: The present invention provides an improved process for preparing modafinil, whereby it may be isolated in high purity by a single crystallization. The process produces modafinil free of sulphone products of over-oxidation and other byproducts. The invention further provides new crystalline Forms II-VI of modafinil and processes for preparing them. Each of the new forms is differentiated by a unique powder X-ray diffraction pattern. The invention further provides pharmaceutical compositions containing novel modafinil Forms II-IV and VI.

Abstract: A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H—SiC single crystal on a 4H—SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H—SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a <11-20> axial direction, and a 4H—SiC single crystal obtained by the same.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.

Abstract: The present disclosure provides methods for forging cylindrical alkali halide melt-grown single-crystal-type ingots into rectangular blocks. The resulting rectangular blocks are devoid of peripheral cracks and fissures, and possess uniform properties and reduced levels of impurities.

Abstract: A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating, heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride, and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.

Abstract: A method for producing crystals and for screening crystallization conditions of chemical materials on distinct metallic islands with specific functional groups, for preparing and screening the conditions necessary to promote a specific polymorph of a crystal, and a means for testing and screening the more precise conditions suitable for achieving a desired size or form of a crystal.

Abstract: A method of which includes the steps of introducing an acidic solution containing (V), copper, ferric iron and ferrous iron into a first tank of a series of continuously stirred tank reactors and, in the first tank, adding air to the solution; heating the solution to an elevated temperature; recycling a portion of selectively precipitated ferric arsenate compounds to the said first tank; and seeding the solution with ferric arsenate compounds.

Abstract: An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0?×<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supereritical solvent, optionally in combination with Group II elements (JUPAC 1989), preferably calcium or magnesium.

Abstract: The present invention relates to the use of phase equilibria as shown in the phase diagram of Cu—In—Se for the preparation of solid compositions. Further, a new method for directly obtaining ? CulnSe2 from a liquid phase, preferably as a single phase composition and novel single phase ? CulnSe2 compositions are provided.

Abstract: The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pulling-up Langasite is within a range of ±0.05% with respect to the target amounts at all measured locations, and because of having a superior homogeneity in the content of components over the entire ingot, when used, for example, in a piezoelectric device such as an surface acoustic wave filter, has properties for industrial application that contribute to the stabilization of characteristics as well as reducing the costs.

Abstract: The invention is directed to a method for processing and annealing metal fluoride single crystals. Among other steps, the method includes of removing the as-grown surfaces of the crystals after they emerge from the growth furnace, processing the surfaces in such way that all the crystal surfaces have the same thermal properties, and then placing the crystals in a secondary annealing furnace to further anneal the crystals to release the residual stresses resulting from the primary annealing process. The invention is suitable for metal fluoride crystals of general formula MF2, where M is calcium, magnesium, barium and strontium, and mixtures thereof.

Abstract: A calcium fluoride crystal produced in accordance with a method for producing calcium fluoride crystal on the basis of refining a raw material of calcium fluoride and causing crystal growth of the refined calcium fluoride, the method including a process of raising a purity of the calcium fluoride to complement the refining, wherein a transition density in crystal is not greater than 1×105/cm2, and that dispersion of transition density inside an effective portion in crystal is in a range of ±5×104/cm2. Also disclosed is an optical element to be manufactured by use of such CaF2 crystal.

Abstract: A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

Abstract: The present invention provides an improved process for preparing modafinil, whereby it may be isolated in high purity by a single crystallization. The process produces modafinil free of sulphone products of over-oxidation and other byproducts. The invention further provides new crystalline Forms II-VI of modafinil and processes for preparing them. Each of the new forms is differentiated by a unique powder X-ray diffraction pattern. The invention further provides pharmaceutical compositions containing novel modafinil Forms II-IV and VI.

Abstract: The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single crystal wafer; a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has an interstitial oxygen concentration of 15 ppma or less; and a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has a BMD density of 5×108/cm3 or less. Thus, there can be obtained a solar cell showing little fluctuation of characteristics.

Abstract: The present invention provides a method for growing crystals in a gel matrix by reacting tartrate anions with cations, the cations selected from the group consisting of K+, Ca2+, Na+, Mg2+ and Li+. A method particularly adapted for crowing cross-shaped crystals includes forming a gel matrix through cooling of a mixture of potassium bitartrate, boiling water and gelatin to less than 65° F. until the matrix solidifies, adding calcium chloride to the gel matrix to react the calcium chloride with the potassium bitartrate at a temperature of preferably less than 65° F. until crystals form, and separating cross-shaped crystals that have reached a desired size from the gel matrix by warming the gel to a liquid state and removing the crystals.

Abstract: An object of the present invention is to efficiently provide a high-quality rare-earth iron garnet single crystal. The invention relates to a rare-earth iron garnet single crystal substantially composed of an Re3Fe5-xMxO12 single crystal (where Re is at least one element selected from Y, Bi, Ca, and lanthanide rare-earth elements with atomic numbers of 62 to 71; M is at least one element selected from Al, Ga, Sc, In, Sn and transition metal elements with atomic numbers of 22 to 30; and 0≦x<5), with the number per unit surface area (grains/cm2) of crystal grains that form low-angle tilt boundaries equal to 0≦n≦102; and also relates to a device in which this rare-earth iron garnet single crystal is used.

Abstract: An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Abstract: It is an object to provide a product having a good crystal particle size distribution of a high-purity potassium fluorotantalate crystal or a high-purity potassium fluoroniobate crystal without using a physical method for particle classification. To that end, a method for manufacturing a high-purity potassium fluorotantalate crystal or a high-purity potassium fluoroniobate crystal is used, wherein the recrystallizing step comprising a first cooling process of cooling a saturated solution with a temperature of 60° C. to 90° C. obtained in the dissolving step at a cooling speed of T° C./hour until the solution temperature of the saturated solution becomes a temperature of the range of 35 to 50° C., and a second cooling process of cooling the solution at a cooling speed of [T-18]° C./hour to [T-1]° C./hour from the end of the first cooling process to the solution temperature becoming a temperature of 10 to 20° C.

Abstract: A method for the non-photochemical laser induced nucleation in which short high-intensity laser pulses are used to induce nucleation in supersaturated solutions including protein solutions. The laser induces nucleation only in the area where the beam is focused or passes through, resulting in fewer nuclei than would be achieved by spontaneous nucleation. In addition, the laser reduces nucleation time significantly.

Abstract: In an optical element which includes a single crystal having at least one flat light-transmitting end surface, the at least one light-transmitting end surface is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal. In a process of producing such an optical element, a single crystal is cut out so that the single crystal has at least one surface which is inclined at at least 0.5 degrees relative to a plane perpendicular to one of an a-axis and a c-axis of the single crystal, and then the at least one surface is polished into at least one light-transmitting end surface.

Abstract: A method for producing piezoelectric lanthanide gallium crystals includes pulling a crystal through a forming mould dipped into a crucible containing a melt, which controls a heat and mass transfer, as the crystal is grown. While a lanthanide gallium single crystal is growing, a charge of mixed oxides, having a composition of the melt may be continuously added to the melt such that the quantity of melt is maintained substantially stable. Crystals produced by this method exhibit less variability in piezoelectric properties. The growth direction of the crystal is aligned along an axis perpendicular to such a crystallographic plane of lanthanide gallium crystal that an improved temperature stability, lowered power flow angle, and reduced diffraction would be present in surface acoustic wave (SAW) devices made in this crystallographic plane. Such crystals are more suitable for the mass-production slicing wafers, for example over 2 inches in diameter, for SAW devices.

Abstract: Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.

Abstract: A tungsten deposition process. A crystal growth step is carried out in a reaction chamber to form a tungsten crystal layer over a substrate using tungsten hexafluoride, silane and nitrogen as reactive gases. An intermediate step is conducted such that the supply of tungsten hexafluoride to the reaction chamber is cut but the supply of silane is continued. Furthermore, nitrogen is passed into the reaction chamber selectively. A main deposition step is finally conducted to form a tungsten layer over the tungsten crystal layer using tungsten hexafluoride, hydrogen and nitrogen as reactive gases.

Abstract: Single crystals of (NH4)2Ni(SO4)2.6H2O represent an excellent material for filtering UV light and in an enclosed system will not deteriorate at temperatures as high as 125° C. They are particularly useful in solar-blind optical systems and sensing devices, which seek to identify the presence of UV light sources in the UV missile warning band.

Abstract: A method of producing a single crystal of the composition M3NbGa3Si2O14 (where M is an alkaline earth metal) comprising growing in a lattice direction inclined at an angle of 50.8 to 90 degrees from a [001] axis. The single crystal obtained in this way may be suitably used as a component of a resonator, filter, or other various piezoelectric elements.

Abstract: A high throughput crystallization methodology using 1,536 well microassay plate technology is described. The methodology uses mother-daughter plate technology with robotic control to deliver oil, unique crystallization cocktails, and a protein solution to each of the wells. This provides 1,536 unique microbatch crystallization experiments using as little as 6 mg of protein in 600 microliters of solution. The time required to deliver a protein solution to a prepared experiment plate is less than 10 minutes. A plate imaging system with a capacity of 28 microassay plates is also described. The imaging system digitally records the results of the experiments for later comparison to database results.

Abstract: A manufacturing method for a single crystal of calcium fluoride by which it is possible to obtain a single crystal of calcium fluoride with adequately small double refraction, which can be used in optical systems for photolithography, and in particular, a single crystal of calcium fluoride with a large diameter (ø 200 mm or larger) having superior optical properties, which can be used for photolithography with a wavelength of 250 nm or less.

Abstract: A method for forming an Al layer using an atomic layer deposition method is disclosed. First, a semiconductor substrate is loaded into a deposition chamber. Then, an Al source gas is supplied into the deposition chamber and the Al source gas is chemisorbed into the semiconductor substrate to form the Al layer. Next, a purge gas is supplied onto the deposition chamber without supplying the Al source gas so that the unreacted Al source gas is removed, thereby completing the Al layer. To form an Al layer to a required thickness, the step of supplying the Al source gas and the step of supplying the purge gas are repeatedly performed, thereby forming an Al atomic multilayer. Therefore, the uniformity and step coverage of the Al layer can be greatly improved.

Abstract: A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.

Abstract: An LiGaO.sub.2 single crystal manufactured by the Czochralski method has a crystallographic axis as a pulling direction set within an angle range of 30.degree. from a b- or a-axis direction. An LiGaO.sub.2 single-crystal substrate and a method of manufacturing the single crystal and the substrate are also disclosed.

Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.

Abstract: A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane.The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.

Abstract: An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path.

Abstract: A method for producing lutetium aluminum perovskite crystals includes heat aging the crystal melt and maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the crystal and its diameter are typically controllable to provide the flat interface as the crystal is pulled. Crystals produced by this method exhibit less variability in scintillation behavior which allows larger crystals to be produced from a boule making them particularly suitable for spectroscopic uses. Such crystals find uses in borehole logging tools.

Abstract: Secondary recrystallized grains having a plurality of crystal orientations in a polycrystalline compact of molybdenum or tungsten, which contains at least one element selected from the group consisting of calcium and magnesium in amount of 0.007 to 0.090 atom %, are formed by locally heating an end portion(s) of the polycrystalline compact. Some grains, which have a prescribed crystal orientation, selected from these secondary recrystallized grains are subsequently grown in the whole polycrystalline compact by annealing.

Abstract: A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.

Abstract: A cylindrical alkali halide single-crystal-type ingot having an axis generally coinciding with the ?001! crystallographic direction is compressed in a heated dual platen press. To produce an approximately rectangular compressed ingot that is devoid of cracks and fissures at and adjacent the periphery, the surface of the ingot is flatted. For crystals having a face-centered lattice (e.g. NaI), the flat is parallel to the (100) crystallographic plane. For crystals having a body-centered lattice (e.g. CsI), the flat is parallel to the (110) crystallographic plane. The flat is placed on the lower platen of the press to properly orient the crystallographic structure of the ingot with respect to the direction of compression.

Abstract: A compound semiconductor crystal has a reduced dislocation density. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and .eta. represents its activation factor:.eta..ltoreq.c.c./(7.8.times.10.sup.15) (1).eta..ltoreq.(10/19).times.(197-2.54.times.10.sup.-17 .times.c.c.) (2).eta..gtoreq.c.c./(3.6.times.10.sup.16) (3)A method which can prepare a compound semiconductor crystal doped with an impurity and having a prescribed carrier concentration with excellent reproducibility comprises the steps of melting a raw material for the compound semiconductor crystal in a crucible, and controlledly cooling the obtained raw material melt, thereby growing a crystal. The time required for cooling the raw material melt from the melting point T of the raw material to 2/3T is so controlled as to adjust the carrier concentration to a prescribed level.

Abstract: A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Abstract: A method of growing a single crystal of a rare-earth silicate is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the pulling is conducted along an axis of pulling having a gradient of at least 30.degree. from the b-axis ([010] axis) of the single crystal and a gradient of at least 25.degree. from the c-axis ([001] axis) of the single crystal. The invention also provides a method of machining a single crystal of a rare-earth silicate into a cylindrical form, comprising grinding a cylinder whose axis is directed so as to have a gradient of 0.degree. to 65.degree. from the c-axis ([001] axis) of the single crystal.

Abstract: Spinel single crystal filaments are produced by a method which consists essentially of solidifying in one direction a melt consisting essentially of 30 to 70% by weight of magnesium oxide, 10 to 45% by weight of aluminum oxide, and 15 to 45% by weight of silicon dioxide, thereby forming a composite texture containing a matrix of forsterite and filaments of spinel dispersed in the matrix, and then separating the filaments of spinel from the composite texture.

Abstract: The present invention provides a method for producing single crystals of a group II-IV-V.sub.2 and group I-III-VI.sub.2 compounds by synthesizing compound material from its constituents and separately melting and refreezing the material in a transparent furnace while observing crystal growth.

Abstract: A compound semiconductor crystal has a reduced dislocation density reduced. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and .eta. represents its activation factor:.eta..ltoreq.c.c./(7.8.times.10.sup.15) (1).eta..ltoreq.(10/19).times.(197-2.54.times.10.sup.-17 .times.c.c.) (2).eta..gtoreq.c.c./(3.6.times.10.sup.16) (3)A method which can prepare a compound semiconductor crystal doped with an impurity and having a prescribed carrier concentration with excellent reproducibility comprises the steps of melting a raw material for the compound semiconductor crystal in a crucible, and controllably cooling raw material melt, making thereby growing a crystal. The time required for cooling the raw material melt from the melting point T of the raw material to 2/3T is so controlled as to adjust the carrier concentration to a prescribed level.

Abstract: A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.

Abstract: A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.