Abstract: The systems and methods disclosed herein are directed to an autonomous vehicle food locker system that may include environmentally controlled storage compartments for storing and/or transporting perishable food items to be delivered to end consumers. The storage compartments may provide ultraviolet light controls and surfaces that provide sanitized food storage areas for a delivery vehicle. Computing processor(s) may be configured for determining a sanitization procedure for sanitizing the interior portion of the food storage locker based on sensor information received from internal and external sensors, video feeds, photographs, and other information. The processor(s) may determine one or more sanitation characteristics that can indicate or inform cleanliness of the interior portion of the food storage locker, and perform automated sanitization procedures that can include activating a chemical layer disposed on the interior portion of the food storage locker.

Abstract: A phosphorescent phosphor having a high afterglow luminance is provided. The phosphorescent phosphor comprises, as a matrix, a compound represented by MAl2O4, the metal element represented by M comprising Sr, Mg and Ba, and the phosphorescent phosphor containing, Eu as an activator, and Dy as a co-activator, wherein the content of Eu, in terms of molar ratio, is 0.001?Eu/(M+Eu+Dy)?0.05; the content of Dy, in terms of molar ratio, is 0.004?Dy/(M+Eu+Dy)?0.06; the content of Mg, in terms of molar ratio, is 0.02?Mg/(M+Eu+Dy)?0.1; the content of Ba, in terms of molar ratio, is 0.03?Ba/(M+Eu+Dy)?0.15; and the phosphorescent phosphor contains at least one alkali metal element of the group consisting of Li, Na, K and rubidium (Rb). Mg and Ba as well as the alkali metal element(s) contained in the phosphorescent phosphor provide an excellent phosphorescent phosphor having a high afterglow luminance.

Abstract: Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically, ZnS single crystals or multi-grain ZnS crystals of pure or substantially pure hexagonal wurtzite structure with sufficiently high purity and crystalline perfection to be used to fabricate components and devices including but not limited to optical components (useful in the infrared (IR) & visible spectrum range of 0.34-14 ?m), photoluminescence devices, cathode luminescence devices, electroluminescence devices, semiconductor devices, and IR laser gain mediums (in the wave length range of 1-5 ?m).

Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.

Abstract: A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

Abstract: The invention relates to a Bi-substituted rare earth-iron garnet single-crystal film and a method for producing it, and also to a Faraday rotator comprising it. Its object is to provide a magnetic garnet single-crystal film which hardly cracks while it grows or is cooled or polished and worked, and to provide a method for producing it. Its object is also to provide a Faraday rotator produced at high yield by working the magnetic garnet single-crystal film which hardly cracks while it grows or is cooled or polished and worked. In a method for producing a magnetic garnet single-crystal film by growing a Bi-substituted magnetic garnet single crystal in a mode of liquid-phase epitaxial growth, the lattice constant of the growing magnetic garnet single crystal is so controlled that it does not vary or gradually decreases with the growth of the single-crystal film, and then increases with it.

Abstract: A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powder supplied to the heat treatment area at temperatures required for single-crystallization of the powder to form a product, and a cooling step for cooling the product obtained in the heat treatment step to form single crystal ceramic powder. The method provides single crystal ceramic powder consisting of particles with a very small particle size and a sphericity being 0.9 or higher.

Abstract: A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-w?wAlx-y?yOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than about 4 and equal to or less than about 13, ? is a divalent cationic element having an ionic radius greater than divalent magnesium, and ? is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral and octahedral positions, and most of the magnesium and ? occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, ? and ? can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of a spinel composition.

Abstract: A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

Abstract: This invention relates to phosphors including long-persistence green phosphors. Phosphors of the invention are represented by the general formula: MkAl2O4:2xEu2+,2yR3+ wherein k−1-2x-2y, x is a number ranging from about 0.0001 to about 0.05, y is a number ranging from about x to about 3x, M is an alkaline earth metal, and R3+ is one or more trivalent metal ions. Phosphors of this invention include powders, ceramics, single crystals and single crystal fibers. A method of manufacturing improved phosphors and a method of manufacturing single crystal phosphors are also provided.

Abstract: This invention relates to phosphors including long-persistence blue phosphors. Phosphors of the invention are represented by the general formula:MO . mAl.sub.2 O.sub.3 :Eu.sup.2+,R.sup.3+wherein m is a number ranging from about 1.6 to about 2.2, M is Sr or a combination of Sr with Ca and Ba or both, R.sup.3+ is a trivalent metal ion or trivalent Bi or a mixture of these trivalent ions, Eu.sup.2+ is present at a level up to about 5 mol % of M, and R.sup.3+ is present at a level up to about 5 mol % of M. Phosphors of this invention include powders, ceramics, single crystals and single crystal fibers. A method of manufacturing improved phosphors and a method of manufacturing single crystal phosphors are also provided.

Abstract: The invention is directed to a thermistor created using a monocrystalline form of a nickel-manganese-oxide cubic spinel and methods of using same as a sensor in an electrical circuit.

Abstract: Novel magnesium dialkylaluminum alkoxide derivative represented by Mg[(.mu.--OR').sub.2 AlR.sub.2 ].sub.2 wherein R and R' are each a C.sub.1-5 alkyl group and R is not the same as R', preferably magnesium dimethylaluminum isopropoxide, is easily prepared by reacting a trialkylaluminum with an alcohol or an aluminum trialkoxide to obtain a dialkylaluminum alkoxide; reacting the dialkylaluminium alkoxide with an alkali metal alkoxide to obtain an alkali metal dialkylaluminum alkoxide; and reacting the alkali metal dialkylaluminum alkoxide with a magnesium halide. The alkoxide derivative of the present invention can be vaporized at a low temperature, below 70.degree. C. and, therefore, effectively employed in the CVD process of a magnesium aluminate film.

Abstract: A method of forming a thin film ferrite material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of the thin film ferrite material on the substrate. The invention also contemplates a device comprising a ferrite layer on a substrate, in which the ferrite layer is formed on the substrate by a process as described above.

Abstract: The invention relates to the growth of nickel-iron-manganese oxide monocrystals having a cubic spinel geometry. Methods of their growth and sensors constructed with same are also described.

Abstract: A non-magnetic single crystal of Mn--Zn ferrite obtained by a solid phase reaction process including the steps of contacting a seed single crystal ferrite with a polycrystal crystal ferrite and producing the single crystal by growing the single crystal in a direction from the seed single crystal toward the polycrystal under heating. The single crystal of Mn--Zn ferrite has a composition defined by points A, B, C, D and E in a three-phase diagram of Fe.sub.2 O.sub.3 --MnO--ZnO, in which:A: Fe.sub.2 O.sub.3 40 mol %, MnO 10 mol %, ZnO 50 mol %;B: Fe.sub.2 O.sub.3 40 mol %, MnO 35 mol %, ZnO 25 mol %;C: Fe.sub.2 O.sub.3 70 mol %, MnO 5 mol %, ZnO 25 mol %;D: Fe.sub.2 O.sub.3 70 mol %, MnO 2 mol %, ZnO 28 mol %; andE: Fe.sub.2 O.sub.3 48 mol %, MnO 2 mol %, ZnO 50 mol %.