Abstract: Barium titanate (BaTiO3) and barium zirconate (BaZrO3) are made into a solid solution at a predetermined ratio. Specifically, a dielectric ceramic composition is represented by a basic composition (BaTiO3)(1-X)(BaZrO3)X (in the formula, X satisfies 0.70?X?0.95). More preferably, X satisfies 0.73?X?0.90 in this range. Such a dielectric ceramic composition may be integrated with alumina to form a composite ceramic structure.

Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

Abstract: A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.

Abstract: A ceramics sintered compact is provided in which a relative dielectric constant and an electromechanical coupling coefficient are improved in superior balance and which shows a relatively high piezoelectric coefficient. A ceramics sintered compact having a perovskite structure is provided in which a (002)/(200) ratio by X-ray diffraction after polarization is applied is 1.0 or greater.

Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.

Abstract: A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a liftoff method wherein a refractory material has been substituted for the conventional organic resin. The method is particularly useful for the fabrication of tunable microwave devices and ferroelectric memory elements.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.

Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.

Abstract: A single crystal scintillator with perovskite structure is described. The crystal is formed by crystallisation from the liquid and has the composition CexLu(1-x-z)AzAl(1-y)ByO3 where A is one or more of the elements selected from the group comprising Y, Sc, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, In, and Ga; and B is one or more of the following elements selected from the group comprising: Sc and Ga. The crystal scintillator exhibits a high density and a good scintillation response to gamma radiation.

Abstract: A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powder supplied to the heat treatment area at temperatures required for single-crystallization of the powder to form a product, and a cooling step for cooling the product obtained in the heat treatment step to form single crystal ceramic powder. The method provides single crystal ceramic powder consisting of particles with a very small particle size and a sphericity being 0.9 or higher.

Abstract: This application describes ceramic oxide superconductors, their precursors and methods of preparation. The superconductors contain no copper, but comprise the transition metals Nickel or Cobalt (MT) together with bulky cations of Groups 2 and 1 of the Periodic Table (M2+ and M1+) such as Ba2+ and K1+. Their hexagonal crystal structure comprises parallel chains of highly covalent, octahedrally coordinated oxygen around the transition metal, which exhibits its highest valence +4. The octahedra are facet-linked forming polyacid chains or macroanions that run the full length of crystallites or single crystals along the c axis. The chains are separated by distances that prevent covalency or orbital overlap among them. They are held together by coulombic forces from the cations located between them that also run parallel to the c axis. Electrical current, carried by holes, can only flow within the chains.

Abstract: A method of forming a multi-layered, spin-coated perovskite thin film on a wafer includes preparing a perovskite precursor solution including mixing solid precursor material into acetic acid forming a mixed solution; heating the mixed solution in air for between about one hour to six hours; and filtering the solution when cooled; placing a wafer in a spin-coating mechanism; spinning the wafer at a speed of between about 500 rpm to 3500 rpm; injecting the precursor solution onto the wafer surface; baking the coated wafer at a temperature of between about 100° C. to 300° C.; annealing the coated wafer at a temperature of between about 400° C. to 650° C. in an oxygen atmosphere for between about two minutes to ten minutes; repeating the spinning, injecting, baking and annealing steps until a perovskite thin film of desired thickness is obtained; and annealing the perovskite thin film at a temperature of between about 500° C. to 750° C.

Abstract: Disclosed is a process for making surfactant capped nanocrystals of transition metal oxides. The process comprises reacting a metal cupferron complex of the formula M Cup, wherein M is a transition metal, and Cup is a cupferron, with a coordinating surfactant, the reaction being conducted at a temperature ranging from about 250 to about 300 C., for a period of time sufficient to complete the reaction.

Abstract: A method of depositing a biaxially textured metal oxide on a substrate defining a plane in which metal oxide atoms are vaporized from a source to form a plume of metal oxide atoms. Atoms in the plume disposed at a selected angle in a predetermined range of angles to the plane of the substrate are allowed to contact the substrate while preventing atoms outside a selected angle from reaching the substrate. The preferred range of angles is 40°-70° and the preferred angle is 60°±5°. A moving substrate is disclosed.

Abstract: The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

Abstract: A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

Abstract: The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Abstract: A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.

Abstract: On the (100) surface of a perovskite of the type ABO.sub.3, a Ruddlerden-Popper AO*(ABO.sub.3).sub.n layer is generated by exposing the perovskite to an oxidizing atmosphere at temperatures above 750.degree. C.

Abstract: A method of forming a thin film ferrite material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of the thin film ferrite material on the substrate. The invention also contemplates a device comprising a ferrite layer on a substrate, in which the ferrite layer is formed on the substrate by a process as described above.

Abstract: A process for controlling the formation of ceramics, achievable under ambient conditions, includes preparing a crystallization medium of a ceramic parent solution and spreading an organic monolayer of a hydrogen-bonded network on the air-liquid interface of the solution. For the formation of aragonite, the process uses an undoped calcium bicarbonate solution and a hydrogen-bonded network with a structural motif approximately matching a calcium ion distance in the a-c plane of aragonite. The aragonite product formed has a [010] axis approximately perpendicular to the monolayer. For perovskite materials, such as BSTO ceramics, the microstructure of the product is controlled by changing different functional groups of the organic monolayer which has been spread on the surface of a perovskite parent solution.

Abstract: A ceramic composite material consisting of two or more crystal phases of different components, each crystal phase having a non-regular shape, said crystal phases having three dimensional continuous structures intertwined with each other, at least one crystal phase thereof being a single crystal. Further, by removing at least one crystal phase from this ceramic composite material, there is provided a porous ceramic material consisting of at least one crystal phase and pores, said crystal phase and pores having non-regular shapes and being three dimensionally continuous and intertwined with each other.

Abstract: A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

Abstract: PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxide at a mixing ratio of between 1:3:5 and 1:8:20, disposing the solvent between a feed rod of PrBa.sub.2 Cu.sub.3 O.sub.7 formed to a high density and a seed crystal, heating the solvent to a temperature of 880.degree.-980.degree. C. in an atmosphere of an inert gas of at least one of argon and nitrogen mixed with 0.01-2% oxygen to form a floating solvent zone, moving the floating solvent zone toward the feed rod at 0.1-1.0 mm/hr under a temperature gradient at the solid-liquid interface of 25.degree.-35.degree. C./mm to precipitate single crystal on the seed crystal, and heat-treating the single crystal obtained in an atmosphere containing not less than 15% oxygen. Another aspect of the invention provides a superconducting device including the superconducting PrBa.sub.2 Cu.

Abstract: A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.

Abstract: A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.

Abstract: A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained.

Abstract: A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Abstract: A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other.

Abstract: A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

Abstract: An oriented conductive thin film useful as a thin film electrode or a thin film resistor is disclosed, comprising an epitaxial or oriented ABO.sub.3 type oxide (e.g., BaPbO.sub.3) conductive thin film which is obtained by coating a single crystal oxide substrate or a single crystal semiconductor substrate with a solution of a metal oxide precursor comprising an organometallic compound, thermally decomposing the coating layer, followed by annealing. An epitaxial or oriented ABO.sub.3 type ferroelectric thin film may further be provided on the conductive thin film.

Abstract: A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.

Abstract: A ceramic composite material consisting of single crystal .alpha.-Al.sub.2 O.sub.3 and single crystal Y.sub.3 Al.sub.5 O.sub.12 is provided. This composite material has high mechanical strength and creep behavior particularly at high temperatures.

Abstract: A method of forming a crystallographically oriented silicon layer over a glassy layer of, for example, SiO.sub.2. A templating layer of a layered perovskite, preferably Bi.sub.4 Ti.sub.3 O.sub.12, is deposited on the glassy layer under conditions favoring its crystallographic growth with its long c-axis perpendicular to the film. The silicon is then grown over the templating layer under conditions usually favoring monocrystalline growth. Thereby, it grows crystallographically aligned with the underlaying templating layer.

Abstract: An electrochemical device including a solid electrolyte and solid electrode composed of materials having different chemical compositions and characterized by different electrical properties but having the same crystalline phase is provided. A method for fabricating an electrochemical device having a solid electrode and solid electrolyte characterized by the same crystalline phase is provided.

Abstract: A method for activating superconducting material comprises generating a species of oxygen ions, heating the material and introducing the oxygen ions to said material by the application of a low-gradient drift field between the source of oxygen ions and a substrate including the superconducting material.

Abstract: A lower capacitor electrode is formed on the basic plate 1, and thereafter a ferroelectric film, for example, a PZT film having the Pb is formed. ITO, RuO2, SnO2 which are Pt or oxide conductive material are formed as a cap layer into 200 .ANG. or more in film thickness by a sputtering method or silicone oxide film or the like are formed with 200A or more in film thickness by a thermal CVD method. Thereafter, a thermal operating operation is effected. By the prevention of the Pb from being evaporated at the thermal processing time, the elaborate ferroelectric film of stoichiometrical perovskite construction can be formed.