Abstract: Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.

Abstract: A standard sample (72) that is a nanometer standard prototype, having a standard length that serves as a length reference, includes a SiC layer in which a step-terrace structure is formed. The height of a step, used as the standard length, is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. In a microscope such as an STM to be measured in a high-temperature vacuum environment, heating in a vacuum furnace enables surface reconstruction with ordered atomic arrangement, while removing a natural oxide film from the surface, so that accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.

Abstract: The present invention generally relates to methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species. In some embodiments, the methods and systems allow for the controlled crystallization of a molecular species in a selected polymorphic form. In some embodiments, the molecular species is a small organic molecule (e.g., pharmaceutically active agent).

Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.

Abstract: Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.

Abstract: Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating.

Abstract: The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning and passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al2O3 dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al2O3 ALD with the GaAs surface, and then deposit high-quality Al2O3 dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.

Abstract: A method of hydrothermally synthesizing sapphire single crystals doped with trivalent metal ions in a crystal-growth autoclave including a crystal-growth zone and nutrient-dissolution zone in fluid communication with the crystal-growth zone is provided. Implementations of the method including situating within the crystal-growth zone at least one sapphire-based seed crystal and situating within the nutrient-dissolution zone an aluminum-containing material to serve as nutrient. An acidic, trivalent-metal-ion-containing growth solution is introduced into the cavity in a quantity sufficient, at least when heated to a predetermined average temperature, to immerse the at least one seed crystal and the nutrient in the growth solution. The growth solution is selected such that sapphire exhibits retrograde solubility therein and the growth process is carried out while maintaining an interior-cavity pressure within a range between and including each of 3.

Abstract: An epitaxial growth method forming a semiconductor thin film including a heterojunction of a group III-V compound semiconductor by means of molecular beam epitaxy. The method is configured to include: a first step of irradiating a molecular beam of at least one of group III elements and a molecular beam of a first group V element to form a first compound semiconductor layer; a second step of stopping the irradiation of the molecular beam of the group III element and the molecular beam of the first group V element to halt growth until an amount of the first group V element supplied is reduced to 1/10 or less of a supply of the first group V element in the first step; and a third step of irradiating a molecular beam of at least one of the group III elements and a molecular beam of a second group V element to form a second compound semiconductor layer, which is different from the first compound semiconductor, on the first compound semiconductor layer.

Abstract: A compound for non-linear optics for use at 350 nm and below. The compound includes a material for non-linear optics comprising AxM(1-x)Al3B4O12. x is larger than or equal to zero and smaller than or equal to 0.1, A is selected from a group consisting of Sc, Y, La, Yb, and Lu, and M is selected from a group consisting of Sc, Y, La, Yb, and Lu. The compound is free from a molybdenum bearing impurity of at least 1000 parts per million.

Abstract: An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal contains a seed crystal and has at least one crystal face selected from a {113} face, a {012} face, a {104} face, a {110} face, a {101} face, a {116} face, a {211} face, a {122} face, a {214} face, a {100} face, a {125} face, a {223} face, a {131} face, and a {312} face. The process for producing the artificial corundum crystal an artificial corundum crystal having a hexagonally dipyramidal includes forming with a seed crystal by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.

Abstract: A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber volume, where there is a substrate to be coated. This first reactant then adsorbs, in a self-limiting process, onto the substrate to be coated. After removing this first reactant from the reaction chamber volume, leaving a layer coating the substrate, a second reactant is then admitted into the reaction chamber volume, which adsorbs onto this initial layer in a self-limiting process. The second reactant is then also removed from the reaction chamber volume. Following this procedure a self-limited multilayer of unreacted species remains adsorbed on the substrate to be coated. If additional chemical species are desirable, these exposures and removals could be continued. Next this multilayer is exposed to a flux of radicals.

Abstract: Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature from a direction allowing the activation of a single slip to induce plastic deformation therein, and then subjecting the resulting product to a heat treatment. The single-crystal material can be used in a device for high-speed dislocation-pipe diffusion of ions or electrons. The single-crystal material can further be subjected to a diffusion treatment so as to diffuse a metal element from its surface along the dislocations to provide a single-crystal device with a specific electrical conductivity or a quantum wire device.

Abstract: A single crystal spinel wafer is disclosed, including a front face and a back face; and an outer periphery having first and second flats. In certain embodiments, the single crystal wafer has a specific crystallographic orientation, and the flats are provided to extend along desired plane sets. The flats may advantageously identify orientation of cleavage planes, and direction of cleavage of cleavage planes.

Abstract: A seed crystal is formed of a rod-like aluminum nitride single crystal whose length direction is oriented to the c-axis direction. Exposed surface on the side portion thereof on which an aluminum nitride material is grown into a crystal has an inclination of 90° relative to a {0001} surface. With this configuration, an aluminum nitride single crystal with excellent crystallinity can be manufactured.

Abstract: A substrate comprising at least two layers which have different thermal expansion coefficients (TECs) is used for subsequent epitaxial growth of semiconductors. A typical example is an epitaxial growth of III-V Nitride (InGaAlBNAsP alloy semiconductor) on sapphire. Due to the thermal mismatch between III-V Nitrides and sapphire, epitaxially-processed wafers bow in a convex manner during cool down after the growth. A layered substrate compensates for the thermal mismatch between the epitaxial layered the top layer of the substrate, resulting in a flat wafer suitable for subsequent processing at high yields. The layered substrate is achieved by attaching to the back side of the substrate a material which has a lower TEC, for example silicon on the backside of the sapphire, to reduce or eliminate the bowing. Silicon is attached or grown on a sapphire wafer by such as wafer bonding or epitaxial growth.

Abstract: A perovskite compound of the formula, (Na1/2Bi1/2)1-xMx(Ti1-yM?y)O3±z, where M is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; and M? is one or more of Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta, W, Cr, Mn, Fe, Co and Ni, and 0.01<x<0.3, and 0.01<y<0.3, and z<0.1 functions as an electromechanically active material. The material may possess electrostrictive or piezoelectric characteristics.

Abstract: An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of Al(NR1R2)x(NR3(CH2)zNR4R5)y or Al(NR1R2)x(NR3(CH2)zOR4)y; where x is 0, 1, or 2; y is 3?x; z is an integer 2 to 8; and R1 to R5 are independently selected from among hydrocarbyl groups containing 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms. The method includes depositing the second precursor on the first deposited precursor, the second precursor containing a nitrogen source or an oxidant. A deposition product of the first and second precursors includes at least one of an aluminum nitride or an aluminum oxide. The deposition method can be atomic layer deposition where the first and second precursors are chemisorbed or reacted as monolayers. The first precursor can further be non-pyrophoric.

Abstract: Single crystal spinel boules, wafers, substrates and active devices including same are disclosed. In one embodiment, such articles have reduced mechanical stress and/or strain represented by improved yield rates.

Abstract: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

Abstract: The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage applications.

Abstract: A method and apparatus for producing bulk single crystals of AlN includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline AlN at the nucleation site.

Abstract: An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of Al(NR1R2)x(NR3(CH2)zNR4R5)y or Al(NR1R2)x(NR3(CH2)zOR4)y; where x is 0, 1, or 2; y is 3−x; z is an integer 2 to 8; and R1 to R5 are independently selected from among hydrocarbyl groups containing 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms. The method includes depositing the second precursor on the first deposited precursor, the second precursor containing a nitrogen source or an oxidant. A deposition product of the first and second precursors includes at least one of an aluminum nitride or an aluminum oxide. The deposition method can be atomic layer deposition where the first and second precursors are chemisorbed or reacted as monolayers. The first precursor can further be non-pyrophoric.

Abstract: In a sapphire substrate having a heteroepitaxial growth surface, the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of the sapphire substrate about a c-axis of the sapphire substrate through 8° to 20° in a crystal lattice of the sapphire substrate. A semiconductor device, electronic component, and crystal growing method are also disclosed.

Abstract: A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.

Abstract: An organometallic compound of formula LiOR′.(R′O)MR2 is vaporized at a low temperature and employed in a CVD process of a heterometallic oxide film of the LiMO2 type, wherein M is a Group 13 element such as Al or Ga; R is a C1-10 alkyl group; and R′ is a C2-10 alkyl group.

Abstract: A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH3)3) as an aluminum source and H2O as an oxygen reaction gas, the disclosed method supplies a NH3 reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.

Abstract: A method of making an electronic device, according to an exemplary embodiment of the invention, comprises the steps of: forming a polycrystalline substrate in a desired shape; converting the polycrystalline substrate into a single crystal substrate using a solid state crystal conversion process; and forming an electronic element on the substrate. Typically, alumina is formed in the shape of a wafer, sintered to form a densified polycrystalline alumina wafer, and heated to a temperature between the melting point of alumina and one-half the melting point of alumina to convert the densified polycrystalline alumina wafer into a sapphire wafer. A light-emitting diode or other electronic device, such as a laser diode, a high frequency microwave device, or an optoelectronic detector, can be formed on the wafer by depositing layers of semiconductor material on the wafer. The solid state crystal conversion process provides several advantages in forming electronic devices.

Abstract: This invention relates to phosphors including long-persistence blue phosphors. Phosphors of the invention are represented by the general formula:MO . mAl.sub.2 O.sub.3 :Eu.sup.2+,R.sup.3+wherein m is a number ranging from about 1.6 to about 2.2, M is Sr or a combination of Sr with Ca and Ba or both, R.sup.3+ is a trivalent metal ion or trivalent Bi or a mixture of these trivalent ions, Eu.sup.2+ is present at a level up to about 5 mol % of M, and R.sup.3+ is present at a level up to about 5 mol % of M. Phosphors of this invention include powders, ceramics, single crystals and single crystal fibers. A method of manufacturing improved phosphors and a method of manufacturing single crystal phosphors are also provided.

Abstract: Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C on a crystal growth interface.

Abstract: A method for heteroepitaxial growth and the device wherein a single crystal ceramic substrate, preferably Y stabilized zirconia, MgAl.sub.2 O.sub.4, A1.sub.2 O.sub.3, 3C--SiC, 6H--SiC or MgO is cut and polished at from about 1.0 to about 10 degrees off axis to produce a substantially flat surface. The atoms on the surface are redistributed on the surface to produce surface steps of at least three lattice spacings. An optional epitaxially grown ceramic buffer layer, preferably AlN or GaN, is then formed on the substrate. Then a layer of semiconductor, preferably SiC, AlN when the buffer layer is used and is not AlN or GaN is grown over the substrate and buffer layer, if used.

Abstract: Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

Abstract: A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.

Abstract: A ceramic composite material consisting of two or more crystal phases of different components, each crystal phase having a non-regular shape, said crystal phases having three dimensional continuous structures intertwined with each other, at least one crystal phase thereof being a single crystal. Further, by removing at least one crystal phase from this ceramic composite material, there is provided a porous ceramic material consisting of at least one crystal phase and pores, said crystal phase and pores having non-regular shapes and being three dimensionally continuous and intertwined with each other.

Abstract: A method for producing lutetium aluminum perovskite crystals includes heat aging the crystal melt and maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the crystal and its diameter are typically controllable to provide the flat interface as the crystal is pulled. Crystals produced by this method exhibit less variability in scintillation behavior which allows larger crystals to be produced from a boule making them particularly suitable for spectroscopic uses. Such crystals find uses in borehole logging tools.

Abstract: Aluminum nitride whiskers are produced by reducing alumina with carbon in a nitrogen atmosphere, at a temperature of 1800.degree. to 2000.degree. C., in the presence of a growth activator containing a solvent element, according to a process that essentially comprises the step of periodically feeding, through the working area of a horizontal furnace equipped with a graphite heating device, counter to a flow of nitrogen, a graphite container charged with a mixture of alumina, carbon and carbonyl iron, as a growth activator, which is present in an amount capable of implementing the VLS mechanism, the time taken by the container to pass through the working zone being in the range of 20 to 120 minutes.

Abstract: The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique.

Abstract: An improved system and process for growing crystal fibers comprising a means for creating a laser beam having a substantially constant intensity profile through its cross sectional area, means for directing the laser beam at a portion of solid feed material located within a fiber growth chamber to form molten feed material, means to support a seed fiber above the molten feed material, means to translate the seed fiber towards and away from the molten feed material so that the seed fiber can make contact with the molten feed material, fuse to the molten feed material and then be withdrawn away from the molten feed material whereby the molten feed material is drawn off in the form of a crystal fiber.

Abstract: A ceramic composite material consisting of single crystal .alpha.-Al.sub.2 O.sub.3 and single crystal Y.sub.3 Al.sub.5 O.sub.12 is provided. This composite material has high mechanical strength and creep behavior particularly at high temperatures.

Abstract: A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700.degree. C. without melting the body.

Abstract: A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.

Abstract: A method for producing a single crystal or polycrystal of terbium aluminate containing at least terbium, aluminum and oxygen and represented by the formula Tb.sub.1-x Al.sub.1+x O.sub.3 wherein -0.5.ltoreq.x.ltoreq.0.5, which comprises growing the single crystal or polycrystal using a reducing gas atmosphere or a neutral gas atmosphere as an atmosphere for crystal growth.

Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.