Abstract: A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

Abstract: Embodiments of an equalization system include a spray system with a spray boom and a plurality of nozzles that have fluid flow measurement sensors to measure flow rate from each nozzle or each section of nozzles for different boom configurations. Based on a comparison of the flow indicators to the average value, target value or reference value, a deviation from a target nozzle outflow rate is determined. The deviation is proportionally applied to adjust pulse width modulated nozzle control to equalize the performance of the nozzles or sections of nozzles.

Abstract: The Present invention relates to a method for manufacturing at least one portion of a seal ensuring gas-tightness between at least one first and one second glass panel in a glazing system, the method including the following steps: depositing a first adhesive layer on a first peripheral area of the first panel and a second adhesive layer on a second peripheral area of the second panel; welding a first metal seal element to the first adhesive layer; welding a second metal seal element or said first metal seal element to the second adhesive layer. According to the invention, the first and second adhesive layers are deposited using a high speed oxy-fuel flame-spraying method.

Abstract: An adhesive applying device includes a robot including a robot arm; a rotor set jig for setting thereat a rotor; a gun including a holder to which a cartridge containing the adhesive is mountable, the gun discharging the adhesive in the cartridge mounted to the holder and being mountable to an end of the robot arm; an electromagnetic valve that performs on/off switching control of supply of compressed air at a predetermined pressure into the cartridge mounted to the holder of the gun; a robot controller that controls an operation of the robot; and an upper-order controller that coordinates and controls the on/off switching control performed by the electromagnetic valve and the control of the operation of the robot performed by the robot controller.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

Abstract: A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.

Abstract: Disclosed are an adhesive coating method and apparatus and a display panel. The adhesive coating method moves a coating unit at a first speed for forming a plurality of adhesive dots, which are separated from each other by a first distance in a straight section, and the coating unit coats an adhesive for forming the adhesive dots on the first substrate. When the coating unit enters from the straight section into the corner section, the adhesive coating method accelerates the coating unit to a second speed faster than the first speed for forming a plurality of adhesive dots, which are separated from each other by a second distance greater than the first distance in a corner section.

Abstract: The present invention relates to a device for producing three-dimensional models by a layering technique, at least one print head (8) being provided for selective dispensing of at least one material onto a target surface in the form of droplets. The print head (8) is in engagement with a receptacle at two points spaced a distance apart, the position and alignment of the print head (8) relative to the target surface is steplessly adjustable in all spatial directions via these two points, and the receptacle and the target surface are movable in relation to each other.

Abstract: In the case of a method and an apparatus, three-dimensional objects (16) can be produced from a solidifiable material by the sequential discharging of discontinuous drops (15). To this end, the solidifiable material is plasticized in the fluid phase and is introduced into a material store (12) having at least one discharging unit (13) which can be clocked. From there, the material is discharged in a dropwise manner by means of a discharging unit (13) in the direction of an object carrier (14) for an object (16), wherein the object carrier (14) and an outlet opening can be moved at a relative spacing in relation to one another in space in order to influence the drop shape. The creation of the drops is supported by changing the relative spacing in an alternating manner in opposite directions during the discharging of the drops from the discharging unit (13) and during the application of the drops to the three-dimensional object (16) during the production of the object.

Abstract: A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: An adhesive applying device includes a robot including a robot arm; a rotor set jig for setting thereat a rotor; a gun including a holder to which a cartridge containing the adhesive is mountable, the gun discharging the adhesive in the cartridge mounted to the holder and being mountable to an end of the robot arm; an electromagnetic valve that performs on/off switching control of supply of compressed air at a predetermined pressure into the cartridge mounted to the holder of the gun; a robot controller that controls an operation of the robot; and an upper-order controller that coordinates and controls the on/off switching control performed by the electromagnetic valve and the control of the operation of the robot performed by the robot controller.

Abstract: An adhesive application apparatus sets a dot pattern such that an amount of paste applied to an area on the reverse side of an area on which an image is formed and an amount of paste applied to an area on the reverse side of an area on which the image is not formed are different from each other, and controls a paste discharge head so that the dot pattern having been set is formed on an adhesion surface of paper. Through this, the amount of paste applied to paper can be changed between an area where an image is formed and an area where the image is not formed, thereby making it possible to apply the paste to paper more appropriately in accordance with the state of image formation.

Abstract: Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma power and duration. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.

Abstract: A surface wave plasma CVD apparatus includes a waveguide connected to a microwave source with slot antennae; a dielectric member that introduces microwaves from slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a subject of film formation such that the subject passes a film formation processing region facing the dielectric member; a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject; and gas ejection parts provided in parallel in a direction at right angles to a direction along which the subject is moved at predetermined positions between the subject that passes through the film formation processing region and the dielectric member. Each of the gas ejection parts has a slit extending parallel to the dielectric member.

Abstract: A metering mechanism is configured for transferring measured doses of a granular material from a first location to a second location, and is particularly suited for metering source material in a vapor deposition apparatus. A receiver is disposed to receive the granular material from the first location. A discharge port is axially offset from an outlet of the receiver. A reciprocating delivery member having a passage defined therethrough is moved in a reciprocating path by a controllable drive device between a load position wherein the passage is aligned with the receiver outlet and a discharge position wherein the passage is aligned with the discharge port. The amount of granular material transferred from the first location to the second location is a function of the volume of the passage and the reciprocating rate of the delivery member.

Abstract: There are provided a vacuum chamber system of a coating apparatus and a coating method using the same that prevents the attraction phenomenon of a coating solution in intermittent coating, so that the failure rate of coating is reduced, thereby improving the quality of products. In one embodiment, a vacuum chamber system of a coating apparatus includes a vacuum chamber connected to a coating solution outlet of the coating apparatus. A sound pressure generating unit is connected to one region of the vacuum chamber to generate sound pressure. A buffer tank is provided between the vacuum chamber and the sound pressure generating unit. In the vacuum chamber system, a control unit is further provided between the vacuum chamber and the buffer tank. The control unit controls air to be selectively inhaled or blocked from the vacuum chamber and the sound pressure generating unit.

Abstract: The invention relates generally to an apparatus and method that enables a very accurate initial setup of the coating gap for slot die coater and subsequent control of the coating gap during coating operations such that web splices and web defects do not interrupt the coating process. An highly accurate initial set up is achieved via the use of a tapered or wedge-shaped adjustment member mounted perpendicular to the axis of travel of the coating head where the movement of this tapered or wedge-shaped adjustment member in a direction perpendicular to the axis of travel of the slot die housing adjusts the coating gap in increments on the order of ten microns.

Abstract: An automated method and system for making painted vehicle body panel skins and vehicle body panels, such as instrument panels, are provided wherein throughput and equipment utilization are greatly improved at a relatively low cost. The method includes transferring a mold having a mold surface from an entrance station to a paint station within a dispensing area. The method further includes applying paint on the mold surface to form a layer of paint on the mold surface at the paint station. The method still further includes spraying curable polyurethane elastomer on the painted surface at a spray station within the dispensing area. The paint and spray stations may be coincident.

Abstract: A method of tuning thin film properties using pulsed laser deposition (PLD) by tuning laser parameters is provided. Various embodiments may be utilized to tune magnetic properties, conductivity or other physical properties. Some embodiments may improve performance of electrochemical devices, for example a thin film electrode may be fabricated resulting in improved reaction speed of a Li ion battery. By way of example, a material property of thin film is tuned by setting a pulse duration. In some embodiments the numbers of laser pulses and laser pulse energy are other laser parameters which may be utilized to tune the film properties. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals and metal oxides.

Abstract: Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system for sequential deposition or atomic layer deposition (ALD) is provided and includes a lid assembly coupled with a chamber housing, wherein the lid assembly contains a lid having a plurality of controllable flow channels extending from an upper lid surface, through the lid, and to a lower lid surface, a gas manifold disposed on the lid, and at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels. The substrate processing system further contains a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a process chamber, and a dual-mode gas distribution plate disposed within the process chamber. The dual-mode gas distribution plate comprises a first gas distribution zone disposed in a center of the gas distribution plate, and a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process, and the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process.

Abstract: An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract: According to one embodiment, a film forming system includes: a stage including a placement surface on which an object to be coated is placed; a rotating mechanism rotating the stage in a rotational direction along the placement surface; an application nozzle discharging a material onto the object placed on the stage for application; a moving mechanism relatively moving the stage and the application nozzle along the placement surface in a cross direction crossing the rotational direction; a controller performing a control to rotate the stage on which the object is placed through the rotating mechanism while relatively moving the stage and application nozzle along the placement surface in the cross direction through the moving mechanism and applying the material to the object on the stage through the application nozzle; and a cleaning apparatus cleaning the application nozzle.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract: The present invention provides an apparatus for manufacturing a bonded substrate that suppresses a defect in the bonded substrate. When the pressure in a vacuum chamber is at the atmospheric level, upper and lower chuck units respectively attract substrates through vacuum. When the vacuum chamber is depressurized, each chuck unit electrostatically attracts the associated substrate. During the depressurization of the vacuum chamber, the pressure for attracting each substrate to the associated chuck unit is controlled to be equal to the pressure in the vacuum chamber. This prevents each substrate from falling from or moving relative to the associated chuck unit. The first and second substrates are thus bonded together and accurately aligned.

Abstract: A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

Abstract: In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: A system and method for aligning prior patterning positions formed by a first SPM tip with a second SPM tip in combination with an SPM system includes identifying first location information that includes a location of the first SPM tip and a sample reference location on an SPM sample and storing the first location information in a storage area. After replacing the first SPM tip with the second SPM tip, second location information, which includes a location of the second SPM tip and the sample reference location on the SPM sample, is identified. Displacement is calculated between the location of the second SPM tip and the first SPM tip based on the first and second location information, and either the second SPM tip or a stage supporting the SPM sample is translated to align the second SPM tip with the location of the first SPM tip in accordance with the calculated displacement.

Abstract: A coating apparatus and method are disclosed in which even if poor coating occurs in a lower-layer, no poor coating occurs in an upper-layer formed on the lower-layer. A pre-wet liquid coating device is disposed between a first coating device at the upstream side of a support web conveying direction, and a second coating device disposed at the downstream side. When an uncoated portion is formed by the first coating device, a pre-wet liquid is coated by a pre-wet liquid coating device, and the coating liquid can be reliably coated by the second coating device. When the pre-wet liquid coating device is removed from the support web, first, the pre-wet liquid coating device is brought into liquid-running out state, and thereafter, removed from the support web. Accordingly, the pool of pre-wet liquid is eliminated and occurrence of a thickly coated portion on the support web can be prevented.

Abstract: A powder coating control system comprising a plurality of gun controls associated with a like plurality of powder spray guns. Each of the gun controls stores a plurality of presets spray parameters. Each of the gun controls responds to part identification signals and part position signals to select in real time one of the stored presets of spray parameters and trigger its respective powder spray gun ON and OFF to apply a powder coating to the moving part in accordance with the selected set of spray parameters. The control system further permits a gun purge cycle to be programmed either before or after the powder coating process is executed. The control system automatically initializes and brings each of the gun controls to an operable state on-line with the system control.

Abstract: An interventional device for delivery of beneficial agent to a lumen and methods of loading and manufacture of the same, which include a prosthesis loaded with beneficial agent to provide a controlled dosage concentration of beneficial agent to the lumen. The beneficial agent is loaded onto the prosthesis by a fluid-dispenser having a dispensing element capable of dispensing the beneficial agent in discrete droplets, each droplet having a controlled trajectory. The method of loading beneficial agent includes dispensing beneficial agent in a raster format and/or an off-axis format along a dispensing path.

Abstract: A powder coating control system comprising a plurality of gun controls associated with a like plurality of powder spray guns. Each of the gun controls stores a plurality of presets spray parameters. Each of the gun controls responds to part identification signals and part position signals to select in real time one of the stored presets of spray parameters and trigger its respective powder spray gun ON and OFF to apply a powder coating to the moving part in accordance with the selected set of spray parameters. The control system further permits a gun purge cycle to be programmed either before or after the powder coating process is executed. The control system automatically initializes and brings each of the gun controls to an operable state on-line with the system control.

Abstract: An apparatus and method for manufacturing a pharmaceutical dose which dispenses a variable selectable quantity of at least one pharmaceutical onto a pharmaceutical receiving medium. The quantity of the dispensed pharmaceutical(s) are controllably dispensed to customize each pharmaceutical dose to suit the needs of a particular user. The apparatus is coupled by an external telecommunication network to a remote signal source for receiving pharmaceutical quantity and type data for custom manufacturing a pharmaceutical dose. In one aspect, a replaceable cartridge contains a reservoir carrying at least one pharmaceutical component and a fluid drop generator which is mountable in the fluid dispenser. The reservoir may contain a number of separate compartments, each carrying different pharmaceutical component.

Abstract: A coating apparatus for applying a coating liquid to a printing substrate. The apparatus includes a rotatable first roll, and a rotatable second roll positioned adjacent to the first roll and defining with the first roll a first nip through which the printing substrate passes. The apparatus also has a metering device for applying a layer of coating liquid onto the second roll, which in turn transfers the coating liquid to the printing substrate. The apparatus further has a controller that communicates with at least the second roll, wherein the controller performs the steps of determining whether the idle time of the second roll is longer than a predetermined threshold, setting a pre-spin flag if the idle time of the second roll is longer than a predetermined threshold, and directing the second roll to perform a pre-spin upon the presence of the pre-spin flag.

Abstract: A method of preventing tar, asphalt and related material from sticking to paving equipment involves spraying a release agent concentrate diluted with water contemporaneously with spraying, utilizing a carbonator pump capable of about 1 gallon per minute pumping rate at about 200 psi, an appropriately-sized motor, a pushbutton momentary contact switch, a timing relay capable of switching the motor on and running it for about 1-2 minutes, a spray gun and appropriately-sized nozzle, appropriate fittings and hoses, and such optional ancillary devices as solenoid valves, particulate screens and freeze protection. The major advantages of the instant invention are that it is simple and economical to build, very robust, and is capable of delivering a good spray pattern at relatively high concentrations of viscous release agents.

Abstract: A glass sealer spray system for a vehicle windshield, the system including: an air controller; a sealer spray frame with the air controller mounted at one side of the sealer spray frame; glass contact rollers each mounted at left and right sides of the sealer spray frame; a spray nozzle unit movably mounted on the midsection of the sealer spray frame between the glass contact rollers; a glass press roller unit rotated by power transmitted to it and mounted at one side of the spray nozzle; and a variable motor unit disposed underneath the sealer spray frame for transmitting power to the glass press roller unit.

Abstract: A powder coating control system comprising a plurality of gun controls associated with a like plurality of powder spray guns. Each of the gun controls stores a plurality of presets spray parameters. Each of the gun controls responds to part identification signals and part position signals to select in real time one of the stored presets of spray parameters and trigger its respective powder spray gun ON and OFF to apply a powder coating to the moving part in accordance with the selected set of spray parameters. The control system further permits a gun purge cycle to be programmed either before or after the powder coating process is executed. The control system automatically initializes and brings each of the gun controls to an operable state on-line with the system control.

Abstract: An upper side of a cup provided around a wafer is formed in a rectangular shape and a lower side thereof is formed in a cylindrical shape. The cup is formed such that, when seen from above, the portion forming the cylindrical shape is positioned within the portion forming the rectangular shape. The cup has a raising and lowering mechanism and is controlled by a control section. The upper side of the cup is placed by the side of the wafer during a scan by a supply nozzle. The lower side of the cup is placed over an upper level and a lower level of the wafer while a rinse liquid and a developing solution are shaken off. The scan by the supply nozzle is performed with the supply nozzle positioned in the upper cup portion.

Abstract: An apparatus and method for manufacturing a pharmaceutical dose which dispenses a variable selectable quantity of at least one pharmaceutical onto a pharmaceutical receiving medium. The quantity of the dispensed pharmaceutical(s) are controllably dispensed to customize each pharmaceutical dose to suit the needs of a particular user. The apparatus is coupled by an external telecommunication network to a remote signal source for receiving pharmaceutical quantity and type data for custom manufacturing a pharmaceutical dose. In one aspect, a replaceable cartridge contains a reservoir carrying at least one pharmaceutical component and a fluid drop generator which is mountable in the fluid dispenser. The reservoir may contain a number of separate compartments, each carrying different pharmaceutical component.

Abstract: An apparatus for performing in-situ curvature measurement of a substrate during a deposition process is provided which includes a clamp for retaining the substrate near one end while leaving the opposite end free. A plurality of displacement sensors are arranged in a spaced apart fashion along the length of the substrate and are directed to a surface of the substrate opposite a surface to be coated. Each sensor provides a signal to a computer corresponding to a position of the substrate relative to the sensor. The computer receives and stores data from the displacement sensors to determine a stress evolution during a deposition process and to determine a coating modulus based upon a resultant curvature of the substrate.

Abstract: When a resist film is formed by discharging a resist solution onto the front face of a wafer housed in a cup, a relation between the film thickness of a resist film and the line width of a circuit pattern when the resist film is exposed into a predetermined pattern and thereafter developed is obtained in advance, from that relation, a line width with less variations corresponding to the changes in film thickness of the resist film is selected from among line widths within a designated region to form a resist film to have the film thickness corresponding to the selected line width. Accordingly, the line width of the circuit pattern after development is not likely to vary regardless of the changes in film thickness of the resist film formed on the wafer.

Abstract: A coater for applying foamed coating material to a traveling textile substrate including a frame, a flush pan, an applicator having an open slot, a pivot shaft journaled in a pair of support arms that are pivotally mounted to the frame and piston-cylinder mechanisms to move the applicator between an operating position wherein the open slot is adjacent the traveling substrate and a flush position wherein the open slot is adjacent the flush pan by pivoting the support arms and rotating the pivot shaft. Foamed coating material is applied by supporting the traveling substrate between two spaced support elements, contacting the traveling substrate with a foam applicator, and forcing a metered amount of foamed material at least partially into the interstices of the textile substrate before the foamed coating material collapses. A metered amount of foamed coating material is applied onto or into a textile substrate regardless of textile substrate structure and regardless of the viscosity of the coating material.

Abstract: A method of gumming articles includes feeding a succession of articles along a feed path by means of a gumming unit having a conveyor for conveying the articles, and two gumming assemblies located on opposite sides of the conveyor to apply respective given quantities of adhesive to each article; supplying adhesive to an outlet of a nozzle of each gumming assembly by means of a respective pump and along an adhesive supply path extending between the pump and the outlet; applying a given quantity of adhesive to each article by means of each nozzle; and metering the quantity of adhesive by means of the pump.

Abstract: To provide a method of manufacturing a battery capable of providing an equal amount of electrolyte in each battery and of enhancing productivity and coating machines employed thereof. The sensor detects a boundary from the collector exposed region C of the belt-shaped positive electrode to the positive electrode mixture layer exposed region B, on the basis of the detection timing, the shutter is withdrawn to open the flowing path and the proportioning pomp is driven. Following this, when the sensor detected a boundary from the positive electrode mixture layer exposed region B to a collector exposed region C, and on the basis of the detection timing, the shutter is protruded inside the flowing path to close the flowing path and the proportioning pump stops. As a result of this, the electrolyte stops to be delivered from the nozzle. The electrolyte layers are intermittently formed by repeating the same procedures.