Abstract: An apparatus for processing a substrate includes a housing having a processing space in which the substrate is processed, a support unit that supports the substrate in the processing space, a nozzle that dispenses a chemical onto the substrate placed on the support unit, a chemical supply unit that supplies the chemical to the nozzle, and a controller that controls the chemical supply unit.

Abstract: The invention provides an assembly for processing a pipe section for a pipeline, in particular for coating said pipe section, said assembly having a longitudinal axis which in use functionally coincides with a rotational axis of said pipe section, said assembly comprising a surface-heating device for heating a surface, said surface-heating device comprising at least one heating module, said heating module comprising at least one infrared (IR) radiation laser device, said surface-heating device arranged for projecting a beam of said at least one infrared (IR) radiation laser device at said longitudinal axis for in use heating a ring-section of a surface of said pipe section.

Abstract: The present invention relates to a device (1) for neutralizing ectoparasites.

Abstract: Systems apply a material (e.g., adhesive) to an article (e.g., a component in an article of footwear) with a multiple-nozzle tool. A first nozzle of the multiple-nozzle tool is effective to provide an edge application of the material that is consistent in application of the material. A second nozzle of the multiple-nozzle tool is effective to provide a greater material coverage application than the first nozzle. The second nozzle may be implemented to apply the material at an interior area from the edge at which the first nozzle applies the material, in an exemplary aspect.

Abstract: Provided is an apparatus for coating a girth weld and a cutback region surrounding said girth weld, said apparatus having lateral travel at least equal to the length of the cutback region and circumferential rotational travel around the pipe. The apparatus can provide a multiple component coating accurately and safely, without the need for solvent flushing of the apparatus.

Abstract: The invention relates to a method to apply a material which assists in the maintenance of a crease (4) or other formation in a garment (2), such as a crease line in the leg of a pair of trousers. The material (15) which is applied is of a form which minimizes the opportunity for the material (15) to be visible at the time of application and/or during subsequent use of the garment (2). The material (15) is applied using a method and apparatus (100) in which the spacing of the apparatus nib (14) from which the material (15) is applied, from the garment (2) and/or contact of the nib (14) with the garment (2) is controlled by support members (112, 114) such that the material (15) is applied onto the garment (2) and adheres thereto in a manner in which the desired effect of the material (15) is achieved without the material subsequently causing discolouration and/or passing through the garment (2).

Abstract: A tool can be used remove one or more outer layers of a tubular such as a flexible pipeline to enable an inspection on the remaining layers of the flexible pipeline. It allows the precise removal of outer layers of a flexible riser so that inspection can take place tubulars that otherwise could not be inspected with ultrasound.

Abstract: A process for conducting vapor phase deposition is disclosed. The process separates a series of reactions through a sequence of reaction reservoirs. The reactor includes a reactive precursor reservoir beneath a powder reservoir separated by valve means. A reactive precursor is charged into the reactive precursor reservoir and a powder is charged into the powder reservoir. The pressures are adjusted so that the pressure in the reactive precursor reservoir is higher than that of the powder reservoir. The valve means is opened, and the vapor phase reactant fluidized the powder and coats its surface. The powder falls into the reactive precursor reservoir. The apparatus permits vapor phase deposition processes to be performed semi-continuously.

Abstract: A method and apparatus for storing and dispensing a viscous product. The product and a propellant are stored in a container on a base, and the propellant forms a head space. In a storage configuration, the container rests on the base, the base rests on a surface, and the propellant in the head space and the product tend to move toward positions wherein the propellant in the head space is at a higher elevation than the product and the product is at a higher elevation than an inlet to a dispenser. In one aspect, the base comprises a first portion, a second portion comprising a lid, a sidewall comprising a window, and an interior. In a second aspect, the method comprises storing the container in the storage configuration, removing the lid to expose a dispenser, dispensing the product, and viewing an interior of the base through the window.

Abstract: Non-traditional dough, such as gluten-free, vegan dough, is processed to make high quality baked products in an industrial process. In the case of cracker production, a cracker finishing machine (100) is provided between a dough depositing machine and an oven to prepare the dough for baking. The dough is flattened to a substantially uniform thickness and moistened by the finishing machine (100). Baking trays (300) with deposited cracker dough are loaded onto a pedestal (120) and pressed against a platen (130) to provide the desired flattening. At the same time, a blotting belt (150) misted with cooking oil is interposed between the platen (130) and the dough for moisturizing.

Abstract: An apparatus for monitoring deposition rate, an apparatus including the same, for depositing an organic layer, a method of monitoring deposition rate, and a method of manufacturing an organic light emitting display apparatus using the same, are provided. The deposition rate monitoring apparatus for measuring deposition rate of a deposition material discharged from a deposition source, includes: a light source for irradiating light having a wavelength within a photoexcitation bandwidth of the deposition material; a first optical system for irradiating the light emitted from the light source toward the discharged deposition material; a second optical system for collecting the light emitted from the deposition material; and a first light sensor for detecting the amount of the light which is emitted from the deposition material and collected in the second optical system.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: A liquid ejecting apparatus having a storage portion (20) for storing a treatment liquid, a slit-shaped opening portion (41) for ejecting the treatment liquid, and a connecting passage (42) that has a slit-shaped cross-section and connects the storage portion (20) to the slit-shaped opening portion (41) includes: a valve body portion (50) that is provided in the storage portion (20) to cover the connecting passage (42), and forms a gap (22) together with a lower wall (43) of the storage portion (20) so that the treatment liquid is caused to flow into the connecting passage (42) through the gap (22); a first curved surface portion (44a) that smoothly connects a surface of the lower wall (43) of the storage portion (20) to an inner wall surface (42a) of the connecting passage (42); and a second curved surface portion (51a) that is provided on the valve body portion (50) so as to project to an identical side to the first curved surface portion (44a).

Abstract: The present invention provides a liquid crystal (LC) coating apparatus and an LC coating method. The LC coating apparatus comprises a plurality of liquid crystal coating devices, at least one real-time detector and a controller. The LC coating method comprises the following steps: utilizing the LC coating devices to coat a LC on a substrate; utilizing the real-time detector to real-time detect the LC coated on the substrate and outputting a detection signal; and utilizing the controller to control the LC coating devices according to the detection signal. The present invention can real-time monitor the coating status of the LC for coating and forming a uniform LC film.

Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.

Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

Abstract: A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

Abstract: The present invention relates to a gas feed installation for depositing barrier layers in a container. According to the invention, a balancing step is carried out using a start-up feed device (70) during transient states when the operation passes from a vacuum step, then to a step of depositing a preparatory layer and finally a step of depositing an actual barrier layer on an injector (44) inside a container (42).

Abstract: The present invention provides a liquid crystal sealant forming device and a display panel assembly apparatus using the same. The display panel assembly apparatus comprises the liquid crystal sealant forming device, an alignment assembly device, a transporting device and a curing device. The liquid crystal sealant forming device comprises a forming substrate; a plurality of liquid crystal dispensing openings formed on one side of the forming substrate for dispensing a liquid crystal on a substrate; and at least one sealant coating opening disposed around the liquid crystal dispensing openings for coating a sealant on the substrate. The present invention can form the liquid crystal and the sealant in the same apparatus.

Abstract: In a cylinder cabinet of an embodiment, when first pressure in a first gas supply pipe is equal to or less than a predetermined value, a pipe of gas supplied to an external apparatus is switched from the first gas supply pipe to a second gas supply pipe, and when a gas flow rate of gas flowing through the external apparatus is equal to or less than a predetermined value, if a residual gas amount of a first gas container connected to the first gas supply pipe is equal to or more than a predetermined value, the pipe is switched from the second gas supply pipe to the first gas supply pipe.

Abstract: A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: The present invention provides a liquid crystal (LC) coating apparatus and an LC coating method. The LC coating apparatus comprises a plurality of liquid crystal coating devices, at least one real-time detector and a controller. The LC coating method comprises the following steps: utilizing the LC coating devices to coat a LC on a substrate; utilizing the real-time detector to real-time detect the LC coated on the substrate and outputting a detection signal; and utilizing the controller to control the LC coating devices according to the detection signal. The present invention can real-time monitor the coating status of the LC for coating and forming a uniform LC film.

Abstract: A vapor deposition process can be used to create layers within a photovoltaic module.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: In an embodiment an apparatus for coating a substrate comprises: an array of plasma arcs; a first plurality of reagent manifolds located upstream of the array of plasma arcs and a second plurality of reagent manifolds located downstream of the array of plasma arcs, each manifold having at least one orifice through which a reagent is ejected into a plasma jet issuing from a respective plasma arc; and a controller which modulates the flow of reagent to each manifold according to the contours of the substrate and to the substrate position relative to the plasma arcs and the manifolds.

Abstract: A regeneration apparatus for an electroless plating solution, which includes a sensor for measuring the formation rate of phosphorous acid formed in a plating tank in response to a plating treatment, a split device for taking out a plating solution in the plating tank to transfer the plating solution to a first processing tank, a sensor for measuring the concentration of the phosphorous acid contained in the plating solution taken out, an addition device for supplying calcium carbonate or calcium hydroxide, an amount of which is required for producing a calcium phosphite from the phosphorous acid contained in the plating solution, to the first processing tank, a separation device for separating and removing the calcium phosphite produced in the first processing tank from the plating solution, and a return pump for transferring the plating solution from which the calcium phosphite has been separated and removed to the plating tank.

Abstract: A method for lubricating rolls, especially work rolls (2, 3) of a rolling stand, and rolling stock (6) passed between the rolls during the rolling operation, in which a lubricant-gas mixture, a lubricant-water-gas mixture, a lubricant-water mixture and/or a grease-medium mixture is applied to the rolls (2, 3) or the rolling stock (6) on the run-in side of the rolling stand, is characterized by the fact that the mixture is prepared with at least one mixing device (14, 17, 27, 29, 31, 35) in the area upstream of the rolling stand.

Abstract: A regeneration apparatus for an electroless plating solution includes a sensor for measuring the formation rate of phosphorous acid formed in a plating tank in response to a plating treatment, a split device for taking out a plating solution in the plating tank to transfer the plating solution to a first processing tank, a sensor for measuring the concentration of the phosphorous acid contained in the plating solution taken out, an addition device for supplying calcium carbonate or calcium hydroxide, an amount of which is required for producing a calcium phosphite from the phosphorous acid contained in the plating solution, to the first processing tank, a separation device for separating and removing the calcium phosphite produced in the first processing tank from the plating solution, and a return pump for transferring the plating solution from which the calcium phosphite has been separated and removed to the plating tank.

Abstract: There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time.

Abstract: Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.

Abstract: Several embodiments of systems for depositing materials and associated methods of operation are disclosed herein. In one embodiment, the system includes a reaction chamber having an inlet and an outlet, a gas source coupled to the inlet of the reaction chamber, and a neutralizer source coupled to the outlet of the reaction chamber. The gas source contains a first precursor gas, a second precursor gas, and a purge gas. The neutralizer source contains a neutralizing agent configured to reduce a rate of reaction between the first precursor gas and the second precursor gas.

Abstract: Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD.

Abstract: There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.

Abstract: Chemical vapor deposition systems and methods of coating a substrate are provided. The method includes evacuating a processing chamber to a threshold pressure. The substrate and the processing chamber are heated to a first processing temperature. A first pellet having a vaporization temperature that is below the first processing temperature is dispensed into the processing chamber and exposed to the first processing temperature within the processing chamber to vaporize the first pellet into a first processing vapor to produce a pressure change from the threshold pressure to a first pressure to cause the first processing vapor to flow through the processing chamber and onto the substrate. The substrate is exposed to the first processing vapor for a predetermined time.

Abstract: A system and method for cooling and coating optical fiber includes the capability to control the amount of coolant gas that is fed to and recycled through a heat exchanger for cooling the optical fiber. The capability to control the amount of fed and recycled coolant gas includes measuring at least one parameter selected from the thermal conductivity of the coolant gas, the viscosity of the coolant gas, the diameter of the primary coating on the optical fiber, and the power usage of a coating applicator for applying primary coating on the optical fiber.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a reaction vessel configured to process a substrate, a heater configured to heat an inside of the reaction vessel, a gas supply line configured to supply gas into the reaction vessel, a first valve installed at the gas supply line, a flow rate controller installed at the gas supply line, a main exhaust line configured to exhaust the inside of the reaction vessel, a second valve installed at the main exhaust line, a slow exhaust line installed at the main exhaust line, a third valve installed at the slow exhaust line, a throttle part installed at the slow exhaust line, a vacuum pump installed at the main exhaust line, and a controller configured to control the valves and the flow rate controller.

Abstract: The present claimed invention is a film forming system 1 that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate 2, and comprises a chamber 3 inside of which the substrate 2 is held, an injection valve 4 that directly injects the liquid precursor into the chamber 3, and a control unit 11 that alternately sets a supplying period while the liquid precursor is directly injected into the chamber 3 to supply the liquid precursor in a vaporized state and a supply halt period while the liquid precursor is not supplied into the chamber 3 and controls the supplying period and the supply halt period by periodically opening and closing the injection valve 4 so as to intermittently supply the liquid precursor into the chamber 3, and is characterized by that the control unit 11 controls the supply halt period to be equal to or longer than a migration/evaporation period necessary for atoms or molecules of the liquid precursor deposited on the substrate 2 to migra

Abstract: An apparatus for forming a protective layer of magnesium oxide on a front glass substrate (11) in an evaporation chamber (201) includes the following: oxygen outlet openings (222) for introducing oxygen into the evaporation chamber (201); water vapor outlet openings (210) for introducing water vapor into the evaporation chamber (201) from the downstream side in the transfer direction of the front glass substrate (11); a mass analyzer (224) for measuring the ionic strength of hydrogen and the ionic strength of oxygen in the evaporation chamber (201); and mass flow controllers (215) and (221) for controlling the introduction amount of the water vapor and the introduction amount of the oxygen, respectively, by the ionic strengths measured by the mass analyzer (224).

Abstract: Disclosed is a substrate processing apparatus which includes: a processing chamber to process a substrate; an exhaust path to exhaust the processing chamber; an exhaust device; an exhaust valve to open and close the exhaust path; a raw material gas supply member to supply raw material gas which contributes to film forming into the processing chamber; a cleaning gas supply member to supply cleaning gas which removes an accretion which adheres to an inside of the processing chamber with the raw material gas being supplied, the cleaning gas supply member comprising a supply path to supply the cleaning gas to the processing chamber and a supply valve to open and close the supply path; and a control section which controls the exhaust valve and the supply valve to supply the cleaning gas from the supply path to the processing chamber with exhaustion of the processing chamber being stopped.

Abstract: A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).

Abstract: The present invention aims to provide a viscous fluid application device which allows improving manufacturing efficiency of semiconductor packages without deteriorating application position accuracy and decreasing designing flexibility. The device includes: an application unit (101) which applies viscous fluid to a substrate 140a; an application head (100) having a supply unit (102) which supplies the viscous fluid to the application unit (101); an X axis unit (110); a Y axis unit (120); a Z axis unit (130); a substrate carrying unit (140); a head height detection sensor (150); and a control unit (160). The supply unit (102) moves in the Y direction in cooperation with a movement in the Y direction of the application unit (101), and remains unmoved irrespective of a movement in the X and Z direction of the application unit (101).

Abstract: Lubricant coatings are applied as lubricant vapor to magnetic disks in a lubricant vapor flow path between the disks and a reservoir for liquid lubricant that is heated to the vapor. The flow path includes a vapor chamber between the reservoir, an apertured diffuser and a shutter for selectively and simultaneously unblocking and blocking the flow path. While the shutter is closed lubricant vapor stays in the vapor chamber. While the shutter is open the lubricant vapor flows via the flow path from the reservoir to the holder. During substantial lulls in applying disks to the flow path, the shutter is closed and vaporizing heat is applied to the liquid lubricant so pressure in the vapor chamber causes the volume of liquid in the reservoir to remain substantially constant.

Abstract: A system for coating a side surface of a moving substrate. The system includes an array of plasma sources, a first plurality of orifices located upstream of the array and a second plurality of orifices located downstream of the array. A coating reagent is injected from each orifice into a plasma jet issuing from plasma source associated with that orifice. A controller modulates the flow of coating reagent and the flow flush gas to the orifices according to the contours of the substrate and to the position of the substrate relative to the array. An additional plasma array and set of orifices may be employed to coat the opposite side surface of the substrate.

Abstract: A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Abstract: A chemical solution is uniformly dispensed from a nozzle by N2 in spin-coating equipment. The dispensing apparatus includes a canister configured to receive a bottle containing the chemical solution, gas supply piping connecting a source of N2 to the inside of the canister, a pressure control valve disposed in the gas supply piping, a chemical supply line by which the bottle is connected to the nozzle, a pressure sensor for sensing the pressure of the chemical solution supplied from the bottle, and a controller that controls the pressure control valve on the basis of the pressure sensed by the pressure sensor. The controller opens the pressure control valve further when the value of the signal output by the pressure sensor is less than a value representative of the minimum of a predetermined pressure range, and closes the pressure control valve further when the value of the signal output by the pressure sensor is greater than a value representative of the maximum of the predetermined pressure range.

Abstract: An apparatus for chemical vapor deposition includes a reaction chamber providing a predetermined sealed space, a reaction gas supply unit for supplying a first reaction gas into the reaction chamber and a reaction gas supply line formed by operatively connecting the reaction gas supply unit and the reaction chamber. The reaction gas supply line allows the first reaction gas to flow through. The apparatus further includes a raw material supply unit for supplying at least one liquid raw material for generating a second reaction gas to be mixed with the first reaction gas supplied through the reaction gas supply line, a liquid raw material supply line allowing the at least one liquid raw material, which is supplied from the raw material supply unit, to flow into the reaction gas supply line, an injector for injecting the at least one liquid raw material to be vaporized at a portion where the liquid raw material supply line is connected to the reaction gas supply line.