Condition Responsive Control Patents (Class 118/708)
  • Patent number: 11499221
    Abstract: A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: November 15, 2022
    Assignee: FLISOM AG
    Inventors: Bernhard Schlaeppi, Michael Akermann
  • Patent number: 11317515
    Abstract: A method for embedding a line in a substrate. A line embedding head in positioned relative to a surface of the substrate. The line from an output port in the line embedding head is output at an angle relative to the embedding head such that the line is embedded in the substrate.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: April 26, 2022
    Assignee: Board of Regents, The University of Texas System
    Inventors: David Espalin, Ryan Wicker, Alfonso Fernandez, Jorge Ramirez, Jose Motta
  • Patent number: 11232946
    Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer into a chamber. The method also includes creating an exhaust flow from the chamber. The method further includes depositing a film on the semiconductor wafer by supplying a processing gas into the chamber. In addition, the method includes detecting, with a use of a gas sensor, a concentration of the processing gas in the exhaust flow and generating a detection signal according to a result of the detection. The method further includes supplying a cleaning gas into the processing chamber for a time period after the film is formed on the semiconductor wafer. The time period is determined based on the detection signal.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: January 25, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Rei-Lin Chu, Chih-Ming Chen, Chung-Yi Yu, Yeur-Luen Tu
  • Patent number: 11211547
    Abstract: A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: December 28, 2021
    Assignee: TDK CORPORATION
    Inventors: Takuya Ashida, Yohei Shiokawa, Tomoyuki Sasaki
  • Patent number: 11195697
    Abstract: A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: December 7, 2021
    Assignee: SPP TECHNOLOGIES CO., LTD.
    Inventors: Toshihiro Hayami, Ryosuke Fujii
  • Patent number: 11049743
    Abstract: An upper electrode is disposed in a processing container to face a wafer and configured to adjust a flow rate of a processing gas for each of divided regions obtained by dividing a facing surface that faces the wafer. A calculator calculates a target flow rate of the processing gas of each of the divided regions where a critical dimension (CD) of a measurement point satisfies a predetermined condition using a prediction model for predicting the CD at a predetermined measurement point of the wafer when plasma etching is performed on the wafer using the flow rate of the processing gas in each of the divided regions as a parameter. A flow rate controller performs a flow rate control such that the flow rate of the processing gas supplied from each of the divided regions of the upper electrode becomes the calculated target flow rate.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: June 29, 2021
    Assignee: TOKYO ELECTRON LMITED
    Inventor: Shinsuke Oka
  • Patent number: 11007705
    Abstract: A method or apparatus for creating a three-dimensional tissue construct of a desired shape for repair or replacement of a portion of an organism. The method may comprise injecting at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The apparatus may comprise an injector configured to inject at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The first material may comprise a yield stress material, which may be a material exhibiting Herschel-Bulkley behavior. The tissue construct may have a smallest feature size of ten micrometers or less.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: May 18, 2021
    Assignees: University of Florida Research Foundation, Inc., Georgia Tech Research Corporation
    Inventors: Thomas Ettor Angelini, Wallace Gregory Sawyer, Kyle Gene Rowe, Tapomoy Bhattacharjee, Alberto Fernandez-Nieves, Ya-Wen Chang, Samantha M. Marquez
  • Patent number: 10987861
    Abstract: A high-precision manufacturing machine used in precision manufacturing processes, such as a 3-D printer, is described. The machine has a frame, a movable platform supported by and movable relative to the frame, on which are mounted one or more platform tool holders for holding one or more tools such as an extruder, a base station that may include one or more bays, each of the bays having a number of base station tool holders, for storing tools that are not in use, and a supporting base, which may be movable relative to the frame, for holding one or more work items to be processed by the tool or tools selected and held by the movable platform.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: April 27, 2021
    Assignee: Dimension Tech Incorporated
    Inventors: Jing Guo, Zhuo Wei
  • Patent number: 10921172
    Abstract: A method and detection system for determining volumetric parameters of liquid within a container using the diffusion of a reference amount of gas are described The method includes filling a first tube with gas to a reference pressure, allowing the gas to diffuse to the container, and measuring a first stable pressure of the gas. The container is then filled with an amount of the liquid and the first tube is filled with gas to the reference pressure. The supply of gas diffuses to the container and a second stable pressure of the gas is measured. Then, a portion of the amount of the liquid is discharged from the container and the first tube is filled with gas to the reference pressure. The supply of gas diffuses to the container, an instantaneous pressure of the supply of gas is detected, and an instantaneous volume of the liquid within the container is calculated.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 16, 2021
    Assignee: Nordson Corporartion
    Inventors: Zhongquan Qiu, Chenyu Yang, Wen Jiang
  • Patent number: 10807307
    Abstract: The invention relates to the field of additive manufacturing, i.e. the manufacture of three-dimensional physical objects by the successive deposition (layering) of polymer materials, and more particularly relates to 3D jet printing techniques. The present method of printing on a 3D jet printer includes the controlled displacement of a 3D printer printing head, the supply of at least two filaments of a fusible material to the printing head, the heating of the filaments by temperature-controlled heaters, the alternate activation of one of the nozzles by means of a printer control module, and the pressurized supply of a filament to the active nozzle. During switching of the nozzles, the printer control module activates a printing head displacement module, which transfers one of the nozzles into an active position. The movement of a movable platform alters the position of the nozzles relative to a valve for the nozzles, closing off the openings of the inactive nozzles and freeing the opening of the active nozzle.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: October 20, 2020
    Assignee: OOO “PICASO 3D”
    Inventor: Viktor Vladimirovich Isupov
  • Patent number: 10654167
    Abstract: A method of initializing and controlling a robotic installation comprising a first robot (70) having a minimum of four degrees of freedom and a second robot (30) that is of Cartesian type, the method comprising the following steps: using the first robot (70) to collect location information relating to at least one element situated in a workspace common to the first and second robots; and using the collected location information to move the second robot (30) in or around the element.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: May 19, 2020
    Assignee: DiaMed GmbH
    Inventors: Anais Faure-Vidal, Sebastien Bernay, Cedric Gagnepain
  • Patent number: 10583482
    Abstract: A modular system (1) for producing a three-dimensional object (2) by layerwise application and selective solidification of a pulverulent build material (13) contains a first module (30, 34-36; 40, 41) suitable for carrying out a first process used for the production of the three-dimensional object (2), and at least a second and a third module (30, 34-36; 40,41) suitable for carrying out a further process used for the production of the three-dimensional object (2). The first to third modules (30, 34-36; 40, 41) are configured so that the second or the third module, or both, can selectively and replaceably be connected to the first module in such a way that their housings are coupled to one another directly.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: March 10, 2020
    Assignee: EOS GMBH ELECTRO OPTICAL SYSTEMS
    Inventors: Martin Heugel, Georg Fey
  • Patent number: 10512552
    Abstract: The present invention provides a three-dimensional bioprinter for fabricating cellular constructs such as tissues and organs using electromagnetic radiation (EMR) at or above 405 nm. The bioprinter includes a material deposition device comprising a cartridge for receiving and holding a composition which contains biomaterial that cures after exposure to EMR. The bioprinter also includes an EMR module that emits EMR at a wavelength of about 405 nm or higher. Also provided is a bioprinter cartridge which contains cells and a material curable at a wavelength of about 405 nm or greater. The cells are present in a chamber and are extruded through an orifice to form the cellular construct.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: December 24, 2019
    Assignee: BIOBOTS, INC.
    Inventors: Ricardo D. Solorzano, Sohaib K. Hashmi, Daniel Cabrera
  • Patent number: 10460913
    Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 29, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Nanako Tamari, Hitoshi Tamura, Naoki Yasui
  • Patent number: 10429263
    Abstract: There is provided a pressure measuring device including: a first pressure gauge connected to a processing chamber configured to process a process target and configured to measure an internal pressure of the processing chamber when the process target is being processed; a second pressure gauge connected to the processing chamber; and a first switching valve configured to disconnect the second pressure gauge from the processing chamber when the process target is being processed inside the processing chamber.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Kikuchi, Tsuneyuki Okabe, Satoru Koike
  • Patent number: 10224220
    Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: March 5, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshihisa Ozu, Naoki Matsumoto, Takashi Tsukamoto, Kazuto Takai
  • Patent number: 10131990
    Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: November 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventor: Yukitomo Hirochi
  • Patent number: 10109483
    Abstract: A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: October 23, 2018
    Assignee: NuFlare Technology, Inc.
    Inventors: Hideshi Takahashi, Yuusuke Sato
  • Patent number: 10073424
    Abstract: Methods, systems, and apparatus, including medium-encoded computer program products, for improving 3D printing systems and techniques include, in one aspect, a system including: three dimensional (3D) printer hardware; and at least one computer communicatively coupled with the 3D printer hardware, the at least one computer programed to receive 3D print type inputs for an object to be 3D printed and create a 3D print profile including parameters for 3D printing the object using the 3D printer hardware by matching the 3D print type inputs against a database.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: September 11, 2018
    Assignee: Autodesk, Inc.
    Inventors: Pierre Pascal Anatole Lin, Karl Willis, Eric Jamesson Wilhelm, Arian Aziz Aghababaie
  • Patent number: 10074524
    Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: September 11, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazushi Kaneko, Kazunori Funazaki, Hideo Kato
  • Patent number: 9957637
    Abstract: A method of adjusting conditions for epitaxial growth includes a first measurement step for measuring the thickness profile of a wafer before forming an epitaxial film; a second measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of the epitaxial film after an epitaxial growth step before a polishing step; a third measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of an epitaxial film; and a step for adjusting conditions for epitaxial growth using the thickness profiles and the film thickness profiles measured in the first, second, and third measurement steps.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: May 1, 2018
    Assignee: SUMCO CORPORATION
    Inventor: Akira Fukui
  • Patent number: 9951423
    Abstract: A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: April 24, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Eric H. Lenz
  • Patent number: 9787137
    Abstract: Different exemplary embodiments provide a power supply apparatus for providing a voltage from an electromagnetic field, which apparatus has a conversion device which is set up to derive a voltage from a wirelessly received electromagnetic field, and a decoupling device which is coupled to the conversion device and has a first connection and a second connection, at each of which a supply voltage is provided, the decoupling device suppressing an effect of the circuits coupled to the first and second connections on the power supply apparatus.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: October 10, 2017
    Assignee: Infineon Technologies AG
    Inventors: Walter Kargl, Helmut Koroschetz, Albert Missoni
  • Patent number: 9564287
    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: February 7, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
  • Patent number: 9498977
    Abstract: A printer includes a substrate and a print head. The print head is movable in a print direction. The print head includes an ink jet dispenser configured to jet ink toward the substrate. The print head further includes a UV source coupled to the ink jet dispenser in a following direction. The UV source is configured to emit UV irradiance. The plurality of mirrors are coupled to the UV source and configured to deflect UV irradiance from the UV source in a direction perpendicular to the print direction.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 22, 2016
    Assignee: Direct Color LLC
    Inventors: Blair Allen, Bill Allen, Steve Chamberland, Lawrence Erikson, Matthew Sands
  • Patent number: 9263309
    Abstract: The present invention provides methods and apparatus capable of routine placement and replacement of fabricator tools in a designated tool location. The tool location can be selected from multiple tool locations arranged in a matrix with horizontal and vertical designations. The operation may be fully automated. In another aspect, the invention describes Cleanspace fabricators which use devices to routinely remove and place tooling.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: February 16, 2016
    Assignee: Futrfab, Inc.
    Inventor: Frederick A. Flitsch
  • Patent number: 9115429
    Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: August 25, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Martin Kent, Eric J. Strang
  • Patent number: 9095866
    Abstract: An apparatus for applying mortar is provided. The apparatus includes a support sled and a mixer positioned on the support sled. The mixer combines a received dry powder mortar and a liquid, and a pump positioned on the support sled and adapted to pump the mixed mortar and liquid. The apparatus further includes a spray head positioned on the support sled and adapted to receive the pumped mortar and liquid mixture and spray the mixture.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: August 4, 2015
    Assignee: INLAND PIPE REHABILITATION LLC
    Inventors: Scott Gesicki, Amir Hoda, Jerald Shelsta
  • Patent number: 9038565
    Abstract: Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: May 26, 2015
    Assignee: Soitec
    Inventors: Chantal Arena, Christiaan Werkhoven
  • Publication number: 20150140212
    Abstract: There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.
    Type: Application
    Filed: April 24, 2013
    Publication date: May 21, 2015
    Inventors: Toshiyuki Kobayashi, Keisuke Shimizu, Koji Kadono, Yukiko Mizuguchi, Yosuke Murakami
  • Publication number: 20150132480
    Abstract: An adhesive application device for applying an adhesive to a material which is moved along a direction of transport x, comprising a nozzle unit having a number of nozzles for applying the adhesive to the material should be able to process gluing patterns of different sizes particularly flexibly and efficiently in a very simple manner. For this purpose, the nozzle unit is arranged to be displaceable transversely to the direction of transport x along a first guide spindle.
    Type: Application
    Filed: April 29, 2013
    Publication date: May 14, 2015
    Applicant: WINKLER & DÜNNEBIER GMBH
    Inventors: Thomas Daum, Daniel Bäth
  • Patent number: 9016235
    Abstract: The substrate coating device (10) includes a slit nozzle (1), a first camera (3), a second camera (4), a control section (5), a pump (8), and a pressure control chamber (9). The control section (5) controls the supply of the coating liquid from the pump (8) to the slit nozzle (1) in accordance with the result of comparison between a bead shape imaged by the first camera (3) and a reference shape. The control section (5) also controls the air pressure on the upstream side of the slit nozzle (1) by the pressure control chamber (9) in accordance with the result of comparison between a distance measured from an image taken by the second camera (4) and a reference distance.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: April 28, 2015
    Assignee: Tazmo Co., Ltd
    Inventors: Yoshinori Ikagawa, Mitsunori Oda, Minoru Yamamoto, Takashi Kawaguchi, Masaaki Tanabe, Hideo Hirata
  • Publication number: 20150101534
    Abstract: The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.
    Type: Application
    Filed: October 16, 2013
    Publication date: April 16, 2015
    Applicant: Chung-Shan Institute of Science and Technology
    Inventors: Wen-Chueh Pan, Tsang-Ming Hsu, Jen-Chieh Li, Tsan-Tung Chen, Chui-Yu Chiu, Shih-Shan Wei
  • Publication number: 20150099059
    Abstract: An ink printing process employs per-nozzle droplet volume measurement and processing software that plans droplet combinations to reach specific aggregate ink fills per target region, guaranteeing compliance with minimum and maximum ink fills set by specification. In various embodiments, different droplet combinations are produced through different printhead/substrate scan offsets, offsets between printheads, the use of different nozzle drive waveforms, and/or other techniques. These combinations can be based on repeated, rapid droplet measurements that develop understandings for each nozzle of means and spreads for expected droplet volume, velocity and trajectory, with combinations of droplets being planned based on these statistical parameters. Optionally, random fill variation can be introduced so as to mitigate Mura effects in a finished display device. The disclosed techniques have many possible applications.
    Type: Application
    Filed: July 24, 2014
    Publication date: April 9, 2015
    Inventors: Nahid Harjee, Lucas D. Barkley, Christopher R. Hauf, Eliyahu Vronsky, Conor F. Madigan, Gregory Lewis, Alexander Sou-Kang Ko, Valerie Gassend
  • Publication number: 20150075425
    Abstract: Provided herein is a coating system using a spray nozzle, the coating system comprising: a support where a substrate is disposed; a spray nozzle configured to inject towards the substrate liquid that has gone through a primary atomization by collision with gas; a voltage applier configured to apply voltage to the spray nozzle so that the liquid injected from the spray nozzle includes electric charge, and to generate an electric field between the support and the spray nozzle by the voltage applied to the spray nozzle and perform a secondary atomization of the liquid injected from the spray nozzle; and a transferrer configured to transfer at least one of the support and the spray nozzle.
    Type: Application
    Filed: March 27, 2014
    Publication date: March 19, 2015
    Applicant: Enjet Co., Ltd.
    Inventors: Do-Young Byun, Vu Dat Nguyen, Baek Hoon Seong
  • Patent number: 8980044
    Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: March 17, 2015
    Assignee: BE Aerospace, Inc.
    Inventors: Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas A. Buchberger, Jr., Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Patent number: 8978577
    Abstract: A waxing device is used for applying a waxing treatment to a polishing wheel, and includes a supporting assembly, an adjusting assembly, a driving mechanism, a mounting assembly, a motor, a wax block and a resisting mechanism. The supporting assembly includes a sliding rail, and the adjusting assembly is slidably positioned on the sliding rail; the driving mechanism is mounted on the adjusting assembly; the mounting assembly includes a mounting member positioned on the driving mechanism; the motor is mounted on mounting member; the wax block is positioned on the motor and rotated by the motor; the resisting mechanism is positioned on the supporting assembly and resists the adjusting assembly for adjusting a pressure applied to the polishing wheel during the waxing process.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: March 17, 2015
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Ming-Lu Yang, Ya-Dong Zhang, Tian-En Zhang, Gao-Feng Du
  • Patent number: 8973520
    Abstract: A coating machine for coating fiber yarns includes: a yarn supply device; a coating device including a tank, a drum rotatably disposed in the tank, and at least one annular groove formed circumferentially in an outer surface of the drum; a thickness adjuster disposed downstream of the coating device and including an adjuster support and at least one adjusting die mounted movably to the adjuster support, the adjusting die having a through hole, the through hole having an upstream inlet end and a downstream outlet end and being tapered from the upstream inlet end to the downstream outlet end; a shape-setting device disposed downstream of the thickness adjuster and having a heating unit controllable to operate at a predetermined temperature; a cooling device disposed downstream of the shape-setting device; and a yarn pick-up device disposed downstream of the cooling device.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: March 10, 2015
    Assignee: Microcrystal Technology Corp.
    Inventor: Martin Chien
  • Patent number: 8960123
    Abstract: Disclosed are coating apparatus including flow coating and roll-coating that may be used for uniform sol-gel coating of substrates such as glass, solar panels, windows or part of an electronic display. Also disclosed are methods for substrate preparation, flow coating and roll coating. Lastly systems and methods for skin curing sol-gel coatings deposited onto the surface of glass substrates using a high temperature air-knife are disclosed.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: February 24, 2015
    Assignee: Enki Technology, Inc.
    Inventors: Brenor L. Brophy, Sina Maghsoodi, Patrick J. Neyman, Peter R. Gonsalves, Jeffrey G. Hirsch, Yu S. Yang
  • Publication number: 20150024515
    Abstract: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof.
    Type: Application
    Filed: July 18, 2014
    Publication date: January 22, 2015
    Inventors: Daniel J. Hoffman, Victor Brouk
  • Publication number: 20150007769
    Abstract: First and second coaters, first and second edge determiners, and first and second moving mechanisms are provided. The first and second coaters apply a coating solution for forming a heat-resistant protection layer onto both surfaces of a substrate on each of which an active material layer is previously formed. The first and second edge determiners determine the locations of lateral edges of the active material layers formed on both surfaces of the substrate to be coated by the respective first and second coaters. The first and second moving mechanisms move the location of the substrate along the width thereof based on the locations of the lateral edges determined by the first and second edge determiners, respectively. The locations of regions of both surfaces of the substrate to be coated are separately adjusted.
    Type: Application
    Filed: September 26, 2014
    Publication date: January 8, 2015
    Inventors: Hidenobu MIURA, Masakazu UMEHARA
  • Publication number: 20140377961
    Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.
    Type: Application
    Filed: June 21, 2013
    Publication date: December 25, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lan Hai Wang, Ding-I Liu, Si-Wen Liao, Po-Hsiung Leu, Yong-Hung Yang, Chia-Ming Tai
  • Publication number: 20140363903
    Abstract: A substrate treating apparatus including: a chamber capable of accommodating a substrate; a treating part which conducts a predetermined treatment associated with forming a coating film containing a metal to the substrate accommodated in the chamber; and a detection part which detects a concentration of a predetermined gas containing a chalcogen element within a gas inside the chamber.
    Type: Application
    Filed: June 10, 2013
    Publication date: December 11, 2014
    Applicant: Tokyo Ohta Kogyo Co., Ltd.
    Inventors: Hidenori Miyamoto, Yubun Kikuchi, Tsutomu Sahoda, Yoshiaki Masu
  • Publication number: 20140363565
    Abstract: A photoresist coating apparatus is provided. The photoresist coating apparatus includes a base; and a position platform moving back and forth along a scanning direction on the base. The photoresist coating apparatus also includes an imprinter having a trench configured to hold photoresist and fixed on the position platform; and a photoresist spray nozzle disposed above the imprinter and configured to spray the photoresist into the trench. Further, the photoresist coating apparatus includes a reticle frame configured to install a cylindrical reticle and enable the cylindrical reticle to rotate around a center axis and contact with the imprinter so as to coat the photoresist in the trench on a surface of the cylindrical reticle.
    Type: Application
    Filed: May 27, 2014
    Publication date: December 11, 2014
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: YANG LIU, QIANG WU, HUAYONG HU
  • Patent number: 8906452
    Abstract: An improved technique achieves a uniform photoresist film on a wafer by controlling the volatility of the solvent in a photoresist solution during the bake process step. Because film formation takes place in the bake rather than the spin steps of the process, the improved technique involves using less viscous and therefore less costly and easier to use resists to cast relatively thick photoresist films. Such control is achieved in an enclosed chamber into which a carrier gas is introduced; the carrier gas mixes with gaseous solvent to create a saturating atmosphere in which the rate of evaporation of solvent decreases. This enables the heating of the wafer without the reduction of solvent in the film so that the photoresist can self-level. When the film has self-leveled, the solvent is then baked off as usual.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: December 9, 2014
    Inventor: Gary Hillman
  • Publication number: 20140352614
    Abstract: A glue spraying system includes a transmission device, a spurting device, a pressing device, a detection device, and a control module. The transmission device includes a front and a rear transmission wheels, a thin film is transmission from the front transmission wheel to the rear transmission wheel by the transmission device. The spurting device is positioned above the thin film, and is for spurting glue on the thin film. The pressing device is positioned at a side of the spurting device, and is for pressing the glue on a spraying area of the thin film. The detection device is configured for detecting whether or not the glue is sprayed on the blank area. The control module is connected to the transmission device and the detection device. When the first sensor detects the glue, the control module controls the transmission device to slow down a transmission speed.
    Type: Application
    Filed: October 31, 2013
    Publication date: December 4, 2014
    Applicant: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventor: CHIA-LING HSU
  • Publication number: 20140356521
    Abstract: A method for applying a powder or granule, wherein the powder or granule is continuously pulled out, by a screw feeder, from a supply unit for temporarily storing the powder or granule, the pulled-out powder or granule is allowed to fall to be received in a vibrating conveyor unit, the powder or granule is conveyed while being dispersed by vibration of a vibrating element of the vibrating conveyor unit, and the powder or granule is continuously applied on the base material from a sprinkling outlet of the vibrating conveyor unit; an application device used for the same; and a method for manufacturing a heat generating element using the same.
    Type: Application
    Filed: November 30, 2012
    Publication date: December 4, 2014
    Inventors: Shogo Oku, Satoru Sugai, Kazutoshi Ootsuka
  • Patent number: 8899176
    Abstract: An adhesive agent applying apparatus has an ejecting section that ejects a thermoplastic adhesive agent and applies the thermoplastic adhesive agent onto one surface of a continuous sheet, traveling in a predetermined travel path and relevant to an absorbent article, by ejecting the thermoplastic adhesive agent from the ejecting section. The apparatus includes a contacting-detaching mechanism that causes relative movement between the continuous sheet and the ejecting section along a contacting-detaching direction, an ejecting mechanism that performs an ejecting operation of the thermoplastic adhesive agent from the ejecting section, and a controller that controls the contacting-detaching mechanism and the ejecting mechanism.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: December 2, 2014
    Assignee: Uni-Charm Corporation
    Inventor: Haruhiko Sakaue
  • Publication number: 20140340748
    Abstract: An apparatus for controlling a color of a film includes a dyeing bath to dip a washed PVA film in an aqueous iodine solution and an aqueous potassium solution and then dye the PVA film therewith, a complementary bath to dip the PVA film in an aqueous potassium solution and then dye the PVA film therewith, a device oven to dry the PVA film having the oriented iodine and potassium, a 4-stage oven to dry the PVA film dried in the device oven, and a central controller to predict a color value of the polarizing film.
    Type: Application
    Filed: September 20, 2012
    Publication date: November 20, 2014
    Inventors: Chang Song Lee, Ho Kyung Lee, Eungki Lee, DaeHyeon Kim, Eung Jin Jang
  • Publication number: 20140342538
    Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
    Type: Application
    Filed: August 5, 2014
    Publication date: November 20, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Edward E. Jones, Sharad N. Yedave, Ying Tang, Barry Lewis Chambers, Robert Kaim, Joseph D. Sweeney, Oleg Byl, Peng Zou