Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

Abstract: Disclosed are systems and methods to plan a path to form a part using an additive manufacturing system. The additive manufacturing system may include one or more additive manufacturing tools. The additive manufacturing tools may include arc welding tools and non-arc welding tools. The system may also manufacture the part based on the planned path.

Abstract: A system, is disclosed having a polymer-based additive manufacturing subsystem, a metallic-based additive manufacturing subsystem, an exchanger to place at least one of the polymer-based additive manufacturing subsystem and the metallic-based additive manufacturing subsystem into a position to provide a manufacturing process, a build area where a part is created with the polymer-based additive manufacturing subsystem and the metallic-based additive manufacturing subsystem, and an environmental control unit to collect debris produced during operation of the polymer-based additive manufacturing subsystem and the metallic-based additive manufacturing subsystem. Another system and method are also disclosed.

Abstract: The present disclosure relates to a 3D printer (1) for 3D printing of a construct. The 3D printer (1) has a print bed (2). The 3D printer further comprises at least one actuating tool head (3) with an extrusion element (4), wherein the extrusion element and the print bed are movable in relation to each other. The 3D printer also comprises at least one sensor (5) arranged to sense a force applied to the print bed (2) by the extrusion element (4), or vice versa. The 3D printer additionally comprises a control element (7) arranged to detect when the sensed force exceeds a predetermined value and to record a position of the print bed or extrusion element related to the detection that the predetermined value is exceeded. The present disclosure also relates to corresponding methods and computer programs.

Abstract: A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.

Abstract: A method for embedding a line in a substrate. A line embedding head in positioned relative to a surface of the substrate. The line from an output port in the line embedding head is output at an angle relative to the embedding head such that the line is embedded in the substrate.

Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer into a chamber. The method also includes creating an exhaust flow from the chamber. The method further includes depositing a film on the semiconductor wafer by supplying a processing gas into the chamber. In addition, the method includes detecting, with a use of a gas sensor, a concentration of the processing gas in the exhaust flow and generating a detection signal according to a result of the detection. The method further includes supplying a cleaning gas into the processing chamber for a time period after the film is formed on the semiconductor wafer. The time period is determined based on the detection signal.

Abstract: A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

Abstract: A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.

Abstract: An upper electrode is disposed in a processing container to face a wafer and configured to adjust a flow rate of a processing gas for each of divided regions obtained by dividing a facing surface that faces the wafer. A calculator calculates a target flow rate of the processing gas of each of the divided regions where a critical dimension (CD) of a measurement point satisfies a predetermined condition using a prediction model for predicting the CD at a predetermined measurement point of the wafer when plasma etching is performed on the wafer using the flow rate of the processing gas in each of the divided regions as a parameter. A flow rate controller performs a flow rate control such that the flow rate of the processing gas supplied from each of the divided regions of the upper electrode becomes the calculated target flow rate.

Abstract: A method or apparatus for creating a three-dimensional tissue construct of a desired shape for repair or replacement of a portion of an organism. The method may comprise injecting at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The apparatus may comprise an injector configured to inject at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The first material may comprise a yield stress material, which may be a material exhibiting Herschel-Bulkley behavior. The tissue construct may have a smallest feature size of ten micrometers or less.

Abstract: A high-precision manufacturing machine used in precision manufacturing processes, such as a 3-D printer, is described. The machine has a frame, a movable platform supported by and movable relative to the frame, on which are mounted one or more platform tool holders for holding one or more tools such as an extruder, a base station that may include one or more bays, each of the bays having a number of base station tool holders, for storing tools that are not in use, and a supporting base, which may be movable relative to the frame, for holding one or more work items to be processed by the tool or tools selected and held by the movable platform.

Abstract: A method and detection system for determining volumetric parameters of liquid within a container using the diffusion of a reference amount of gas are described The method includes filling a first tube with gas to a reference pressure, allowing the gas to diffuse to the container, and measuring a first stable pressure of the gas. The container is then filled with an amount of the liquid and the first tube is filled with gas to the reference pressure. The supply of gas diffuses to the container and a second stable pressure of the gas is measured. Then, a portion of the amount of the liquid is discharged from the container and the first tube is filled with gas to the reference pressure. The supply of gas diffuses to the container, an instantaneous pressure of the supply of gas is detected, and an instantaneous volume of the liquid within the container is calculated.

Abstract: The invention relates to the field of additive manufacturing, i.e. the manufacture of three-dimensional physical objects by the successive deposition (layering) of polymer materials, and more particularly relates to 3D jet printing techniques. The present method of printing on a 3D jet printer includes the controlled displacement of a 3D printer printing head, the supply of at least two filaments of a fusible material to the printing head, the heating of the filaments by temperature-controlled heaters, the alternate activation of one of the nozzles by means of a printer control module, and the pressurized supply of a filament to the active nozzle. During switching of the nozzles, the printer control module activates a printing head displacement module, which transfers one of the nozzles into an active position. The movement of a movable platform alters the position of the nozzles relative to a valve for the nozzles, closing off the openings of the inactive nozzles and freeing the opening of the active nozzle.

Abstract: A method of initializing and controlling a robotic installation comprising a first robot (70) having a minimum of four degrees of freedom and a second robot (30) that is of Cartesian type, the method comprising the following steps: using the first robot (70) to collect location information relating to at least one element situated in a workspace common to the first and second robots; and using the collected location information to move the second robot (30) in or around the element.

Abstract: A modular system (1) for producing a three-dimensional object (2) by layerwise application and selective solidification of a pulverulent build material (13) contains a first module (30, 34-36; 40, 41) suitable for carrying out a first process used for the production of the three-dimensional object (2), and at least a second and a third module (30, 34-36; 40,41) suitable for carrying out a further process used for the production of the three-dimensional object (2). The first to third modules (30, 34-36; 40, 41) are configured so that the second or the third module, or both, can selectively and replaceably be connected to the first module in such a way that their housings are coupled to one another directly.

Abstract: The present invention provides a three-dimensional bioprinter for fabricating cellular constructs such as tissues and organs using electromagnetic radiation (EMR) at or above 405 nm. The bioprinter includes a material deposition device comprising a cartridge for receiving and holding a composition which contains biomaterial that cures after exposure to EMR. The bioprinter also includes an EMR module that emits EMR at a wavelength of about 405 nm or higher. Also provided is a bioprinter cartridge which contains cells and a material curable at a wavelength of about 405 nm or greater. The cells are present in a chamber and are extruded through an orifice to form the cellular construct.

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.

Abstract: There is provided a pressure measuring device including: a first pressure gauge connected to a processing chamber configured to process a process target and configured to measure an internal pressure of the processing chamber when the process target is being processed; a second pressure gauge connected to the processing chamber; and a first switching valve configured to disconnect the second pressure gauge from the processing chamber when the process target is being processed inside the processing chamber.

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

Abstract: A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

Abstract: Methods, systems, and apparatus, including medium-encoded computer program products, for improving 3D printing systems and techniques include, in one aspect, a system including: three dimensional (3D) printer hardware; and at least one computer communicatively coupled with the 3D printer hardware, the at least one computer programed to receive 3D print type inputs for an object to be 3D printed and create a 3D print profile including parameters for 3D printing the object using the 3D printer hardware by matching the 3D print type inputs against a database.

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Abstract: A method of adjusting conditions for epitaxial growth includes a first measurement step for measuring the thickness profile of a wafer before forming an epitaxial film; a second measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of the epitaxial film after an epitaxial growth step before a polishing step; a third measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of an epitaxial film; and a step for adjusting conditions for epitaxial growth using the thickness profiles and the film thickness profiles measured in the first, second, and third measurement steps.

Abstract: A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.

Abstract: Different exemplary embodiments provide a power supply apparatus for providing a voltage from an electromagnetic field, which apparatus has a conversion device which is set up to derive a voltage from a wirelessly received electromagnetic field, and a decoupling device which is coupled to the conversion device and has a first connection and a second connection, at each of which a supply voltage is provided, the decoupling device suppressing an effect of the circuits coupled to the first and second connections on the power supply apparatus.

Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

Abstract: A printer includes a substrate and a print head. The print head is movable in a print direction. The print head includes an ink jet dispenser configured to jet ink toward the substrate. The print head further includes a UV source coupled to the ink jet dispenser in a following direction. The UV source is configured to emit UV irradiance. The plurality of mirrors are coupled to the UV source and configured to deflect UV irradiance from the UV source in a direction perpendicular to the print direction.

Abstract: The present invention provides methods and apparatus capable of routine placement and replacement of fabricator tools in a designated tool location. The tool location can be selected from multiple tool locations arranged in a matrix with horizontal and vertical designations. The operation may be fully automated. In another aspect, the invention describes Cleanspace fabricators which use devices to routinely remove and place tooling.

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract: An apparatus for applying mortar is provided. The apparatus includes a support sled and a mixer positioned on the support sled. The mixer combines a received dry powder mortar and a liquid, and a pump positioned on the support sled and adapted to pump the mixed mortar and liquid. The apparatus further includes a spray head positioned on the support sled and adapted to receive the pumped mortar and liquid mixture and spray the mixture.

Abstract: Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.

Abstract: There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.

Abstract: An adhesive application device for applying an adhesive to a material which is moved along a direction of transport x, comprising a nozzle unit having a number of nozzles for applying the adhesive to the material should be able to process gluing patterns of different sizes particularly flexibly and efficiently in a very simple manner. For this purpose, the nozzle unit is arranged to be displaceable transversely to the direction of transport x along a first guide spindle.

Abstract: The substrate coating device (10) includes a slit nozzle (1), a first camera (3), a second camera (4), a control section (5), a pump (8), and a pressure control chamber (9). The control section (5) controls the supply of the coating liquid from the pump (8) to the slit nozzle (1) in accordance with the result of comparison between a bead shape imaged by the first camera (3) and a reference shape. The control section (5) also controls the air pressure on the upstream side of the slit nozzle (1) by the pressure control chamber (9) in accordance with the result of comparison between a distance measured from an image taken by the second camera (4) and a reference distance.

Abstract: The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

Abstract: An ink printing process employs per-nozzle droplet volume measurement and processing software that plans droplet combinations to reach specific aggregate ink fills per target region, guaranteeing compliance with minimum and maximum ink fills set by specification. In various embodiments, different droplet combinations are produced through different printhead/substrate scan offsets, offsets between printheads, the use of different nozzle drive waveforms, and/or other techniques. These combinations can be based on repeated, rapid droplet measurements that develop understandings for each nozzle of means and spreads for expected droplet volume, velocity and trajectory, with combinations of droplets being planned based on these statistical parameters. Optionally, random fill variation can be introduced so as to mitigate Mura effects in a finished display device. The disclosed techniques have many possible applications.

Abstract: Provided herein is a coating system using a spray nozzle, the coating system comprising: a support where a substrate is disposed; a spray nozzle configured to inject towards the substrate liquid that has gone through a primary atomization by collision with gas; a voltage applier configured to apply voltage to the spray nozzle so that the liquid injected from the spray nozzle includes electric charge, and to generate an electric field between the support and the spray nozzle by the voltage applied to the spray nozzle and perform a secondary atomization of the liquid injected from the spray nozzle; and a transferrer configured to transfer at least one of the support and the spray nozzle.

Abstract: A waxing device is used for applying a waxing treatment to a polishing wheel, and includes a supporting assembly, an adjusting assembly, a driving mechanism, a mounting assembly, a motor, a wax block and a resisting mechanism. The supporting assembly includes a sliding rail, and the adjusting assembly is slidably positioned on the sliding rail; the driving mechanism is mounted on the adjusting assembly; the mounting assembly includes a mounting member positioned on the driving mechanism; the motor is mounted on mounting member; the wax block is positioned on the motor and rotated by the motor; the resisting mechanism is positioned on the supporting assembly and resists the adjusting assembly for adjusting a pressure applied to the polishing wheel during the waxing process.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: A coating machine for coating fiber yarns includes: a yarn supply device; a coating device including a tank, a drum rotatably disposed in the tank, and at least one annular groove formed circumferentially in an outer surface of the drum; a thickness adjuster disposed downstream of the coating device and including an adjuster support and at least one adjusting die mounted movably to the adjuster support, the adjusting die having a through hole, the through hole having an upstream inlet end and a downstream outlet end and being tapered from the upstream inlet end to the downstream outlet end; a shape-setting device disposed downstream of the thickness adjuster and having a heating unit controllable to operate at a predetermined temperature; a cooling device disposed downstream of the shape-setting device; and a yarn pick-up device disposed downstream of the cooling device.

Abstract: Disclosed are coating apparatus including flow coating and roll-coating that may be used for uniform sol-gel coating of substrates such as glass, solar panels, windows or part of an electronic display. Also disclosed are methods for substrate preparation, flow coating and roll coating. Lastly systems and methods for skin curing sol-gel coatings deposited onto the surface of glass substrates using a high temperature air-knife are disclosed.

Abstract: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof.

Abstract: First and second coaters, first and second edge determiners, and first and second moving mechanisms are provided. The first and second coaters apply a coating solution for forming a heat-resistant protection layer onto both surfaces of a substrate on each of which an active material layer is previously formed. The first and second edge determiners determine the locations of lateral edges of the active material layers formed on both surfaces of the substrate to be coated by the respective first and second coaters. The first and second moving mechanisms move the location of the substrate along the width thereof based on the locations of the lateral edges determined by the first and second edge determiners, respectively. The locations of regions of both surfaces of the substrate to be coated are separately adjusted.

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract: A substrate treating apparatus including: a chamber capable of accommodating a substrate; a treating part which conducts a predetermined treatment associated with forming a coating film containing a metal to the substrate accommodated in the chamber; and a detection part which detects a concentration of a predetermined gas containing a chalcogen element within a gas inside the chamber.

Abstract: A photoresist coating apparatus is provided. The photoresist coating apparatus includes a base; and a position platform moving back and forth along a scanning direction on the base. The photoresist coating apparatus also includes an imprinter having a trench configured to hold photoresist and fixed on the position platform; and a photoresist spray nozzle disposed above the imprinter and configured to spray the photoresist into the trench. Further, the photoresist coating apparatus includes a reticle frame configured to install a cylindrical reticle and enable the cylindrical reticle to rotate around a center axis and contact with the imprinter so as to coat the photoresist in the trench on a surface of the cylindrical reticle.

Abstract: An improved technique achieves a uniform photoresist film on a wafer by controlling the volatility of the solvent in a photoresist solution during the bake process step. Because film formation takes place in the bake rather than the spin steps of the process, the improved technique involves using less viscous and therefore less costly and easier to use resists to cast relatively thick photoresist films. Such control is achieved in an enclosed chamber into which a carrier gas is introduced; the carrier gas mixes with gaseous solvent to create a saturating atmosphere in which the rate of evaporation of solvent decreases. This enables the heating of the wafer without the reduction of solvent in the film so that the photoresist can self-level. When the film has self-leveled, the solvent is then baked off as usual.

Abstract: A method for applying a powder or granule, wherein the powder or granule is continuously pulled out, by a screw feeder, from a supply unit for temporarily storing the powder or granule, the pulled-out powder or granule is allowed to fall to be received in a vibrating conveyor unit, the powder or granule is conveyed while being dispersed by vibration of a vibrating element of the vibrating conveyor unit, and the powder or granule is continuously applied on the base material from a sprinkling outlet of the vibrating conveyor unit; an application device used for the same; and a method for manufacturing a heat generating element using the same.