Abstract: A tool for harvesting polycrystalline silicon-coated rods from a chemical vapor deposition reactor includes a body including outer walls sized for enclosing the rods within the outer walls. Each outer wall includes a door for allowing access to at least one of the rods.
Abstract: A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal.
Abstract: A method for the production and control of plates for electronics comprising a first step in which a plate is positioned, by means of positioning means, in a loading station; a second step in which the plate is disposed in a deposition station associated with a unit for depositing metal, or other material, in which the metal is deposited on the plate, in order to generate on the plates metal tracks, according to a pre-determined and desired topological disposition; a third step in which the plate is disposed in an exit station and a detection means is activated so as to detect the presence of defects in the plate; and a fourth step in which the plate is discharged from the exit station. In the first step the detection means is activated to identify defects in the plate disposed in the loading station. In the second step the deposition unit is activated in order to deposit the metal on the plate when in the first step the detection means has not detected any defect in the plate.
Abstract: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300).
Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
September 27, 2004
Date of Patent:
March 20, 2007
Advanced Plasma, Inc.
Gregory A. Roche, Leonard J. Mahoney, Daniel C. Carter, Steven J. Roberts
Abstract: In a method and apparatus for predicting process results of objects being processed in a processing chamber of a processing apparatus, operation data and process result data obtained at the time of processing each of the objects are collected and a multivariate analysis is performed on the basis of the collected operation data and process result data to obtain a first correlation therebetween. Process results are predicted on the basis of the first correlation. Weighting coefficients for the respective operation data are set on the basis of the predicted process results. A second correlation between the weighted operation data and the process result data is obtained by a multivariate analysis. Process results are predicted by using operation data, obtained when objects other than the objects used to obtain the second correlation are processed, on the basis of the second correlation.
Abstract: Systems, devices and methods for applying solution to a filament include an applicator for applying at least a partial coating of a solution to a filament, comprising: an applicator surface operable to at least partially coat a filament with a solution; a first container operable to supply the solution to the applicator surface, a volume of the solution in the first container corresponding to a solution level in the first container; a second container operable to contain a supply of solution in fluid communication with the solution in the first container such that the solution in the second container has a solution level indicative of the solution level of the solution in the first container; and a detector for determining the solution level within the second container, the detector operable to control an adjustment of the volume of the solution in the first container such that the solution level in the first container is maintained within a predetermined range of levels.
June 25, 2001
Date of Patent:
November 16, 2004
PPG Industries Ohio, Inc.
Mitchell V. Bruce, Thomas V. Thimons, Dominic E. Verdini, Songhao Wang, Paul A. Westbrook
Abstract: A paste applicator for drawing a paste film in a desired pattern on a substrate, including a table for detachably supporting a substrate, a paste reservoir tube to be filled with a paste, and a nozzle communicating with the paste reservoir and having a paste discharging port opposing to an upper surface of the substrate mounted on the table. A device is supplied for changing the relative positional relationship between the nozzle and the substrate mounted on the table. The paste is applied onto the substrate to form a desired pattern of the paste. A measuring device measures a position of a paste discharging port of a nozzle exchanged together with the paste reservoir tube by using a paste pattern formed by applying the paste onto the substrate held on the table using the exchanged nozzle. The center of the paste pattern nearly agrees with the center of the paste discharging port.
Abstract: A six-roll impregnator applies resin to only one side of a fabric. The resin is then pressed through the fabric, after which a pair of rolls squeezes excess resin from the fabric. In this manner, no air is entrapped within the fabric during the impregnation process.