Abstract: Disclosed are a method and a device for plasma treating workpieces (5). Said workpiece is inserted into a chamber (7) of a treatment station (3), which can be at least partly evacuated, and is positioned within the treatment station by means of a holding element. In order to simultaneously supply at least two chambers with at least one operating means, a flow of the operating means is branched at least once so as to form at least two partial flows (55).

Abstract: The specification discloses a method and apparatus enabling the formation of a diffusion surface layer on a surface of a metal substrate, typically a ferrous based metal substrate, wherein in a first stage in a first fluidized bed furnace, a diffusion zone is formed extending inwardly from the surface of the metal substrate in which nitrogen has been diffused to form a nitride or carbo nitride inner zone and an outer white layer that is substantially free of porosity, treating the substrate formed in the first stage to prevent formation of or remove any surface oxide on the surface of the substrate, and in a second stage separate from the first stage, holding the thus treated substrate in a fluidized bed furnace operated under an inert atmosphere and fluidized by a flow of inert gas or gases, the substrate in the fluidized bed furnace being treated in the presence of a halide gas and a particulate metal or metal alloy.

Abstract: A fluid bed apparatus module (1) comprises an outer wall enclosing a processing chamber (9) and has a lower flange connection (4) and an upper flange connection (5), the lower flange connection being adapted to connection with a flange connection (14) of a supply of fluidising gas, and the upper flange connection being adapted to connection with a flange connection (17) of a filter chamber (18) for gas discharge. At least one partition element (6) is arranged in the processing chamber, so that at least one elongated channel is formed in the processing chamber, thereby defining a plug-flow area, and at least one substantially continuous product inlet (10) and at least one substantially continuous product outlet (11) are arranged in the module. Furthermore, a method comprises changing a first module for a second module in a fluid bed apparatus.

Abstract: The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

Abstract: Continuously operating furnace and method for obtaining thermal diffusion coating on the outside surface of metallic articles. The furnace is configured as a tunnel through which in succession are advanced closed containers filled with the processed articles and with powder mixture, containing diffusing specie. A chain conveyor, passing through the furnace, advances the containers along a transportation path. The furnace is provided with plurality of stopper means, capable to intermittently prevent the advancement of the containers and to retain them in discrete positions, situated along the transportation path. The containers advance in parallel being always directed perpendicularly to the transportation path and their retention in the discrete positions causes their rotation about their longitudinal axes. Continuous operation is associated with improved efficiency and increased capacity.

Abstract: This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by desorption spectrometry. The methods are useful in biology and medicine, including clinical diagnostics and drug discovery.

Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.

Abstract: A process for preparing particles of zinc sulfide-based electroluminescent phosphor having a moisture resistant coating thereon which comprises the steps of selecting a reaction vessel having a given height and a porous disc at the bottom thereof; charging the reaction vessel with phosphor particles and fluidizing the particles by introducing an inert gas into the vessel through the porous disc; heating the reaction vessel to a reaction temperature; introducing a coating precursor into the reaction vessel at a position adjacent the bottom of the vessel but above the disc; introducing a co-reactant into the reaction vessel at a position substantially mid-way of the given height; and maintaining the inert gas flow, the precursor flow and the co-reactant flow for a time sufficient for a reaction to occur and coat the phosphor with the moisture resistant coating. Apparatus for carrying out the process is also disclosed.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Abstract: A fixture for selectively masking a turbine blade 60 includes a locator 10 with a separable receptacle 40 having portals 50. Guide bars 18 extend from the locator for guiding a pair of shield carriers 20 between deployed and retracted positions. Each shield carrier has a shield 26 projecting therefrom. In use, a turbine blade 60, whose root 70 includes a fir tree attachment 72 and a damper pocket 74, is mounted on the fixture so that the receptacle embraces the blade root. The shield carriers are translated along the guide bars until the shields penetrate through the portals and into the receptacle thus segregating the attachment 72 from the damper pocket 74. Masking powder 84 is then compressed into the receptacle to envelop the attachment while leaving the damper pocket unmasked.

Abstract: A method and apparatus for boronizing a metal workpiece which includes the step of providing a container having a least one workpiece receiving chamber and at least one heating chamber adapted to heat the workpiece receiving chamber. The metal workpiece to be boronized is placed within the workpiece receiving chamber in physical contact with a boronizing agent. The heating chamber is heated until the workpiece receiving chamber is heated to a sufficient temperature for a sufficient length of time to boronize the workpiece. With this method an internal heating chamber positioned within the container is used to supply heat for the boronizing process, as opposed to placing the container into a boronizing furnace. This eliminates the need for a boronizing furnace, with all of its associated expense.

Abstract: A method for surface treatment in which a fluidizable powder mixture consisting of a powder of a refractory material, and a surface layer-forming powder of a metal, or alloy or both is fluidized by a fluidizing gas supplied through a gas distributor to form above the gas distributor a fluidized bed in which a surface layer is formed on the material to be treated under heating in the presence of a halide. A layer of coarse particles is disposed between the fluidized bed and the gas distributor, and the coarse particles have a mean diameter, D(m), as defined below:(1650V.mu./PG).sup.1/2 <D<6.5dwhereV: velocity of the fluidizing gas (m/s);.mu.: viscosity coefficient of the fluidizing gas (kg/m.multidot.s);P: mean density of the coarse particles (kg/m.sup.3);G: acceleration of gravity (9.8 m/s.sup.2);d: mean particle diameter of the surface layer-forming powder (m).

Abstract: A magnetic recording medium having good high density recording characteristics is produced by forming a magnetic layer on a substrate which is traveling around a peripheral surface of a cylindrical can by an oblique vapor deposition method to form a magnetic layer comprising cobalt, an axis of easy magnetization of which inclined from a line normal to the layer plane. A residual gas pressure in an initial region of the formation of the magnetic layer is kept as low as possible, in particular, the residual gas pressure in the initial region of the formation of the magnetic layer is lower than in the other part of the production apparatus.

Abstract: An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.

Abstract: An apparatus for use in semiconductor fabrication that includes use of a photo-excitation process and is provided with a revolving gas chamber for forming spiral vortices flow of purge gas located at the upper or side part of a gas reaction chamber, an internal or external light source, a partition having a centrally located circular opening provided between the revolving gas chamber and the gas reaction chamber, or without the partition when the revolving gas chamber is made smaller than the gas reaction chamber. The revolving gas chamber has a multiplicity of gas inlets oriented at an angle with respect to the center of the revolving gas chamber to produce a gas flow in one direction to form spiral vortices that revolves and thereby prevents the light source or light transmitting window from becoming contaminated by process reactions.

Abstract: A high-vacuum coating apparatus for coating films has beneath its coating cylinder (7) a pivoting unit (8) which can turn on a pivot shaft (25). It has an adjustable mask (29) and thereunder a shutter (28) which can run from a position covering an evaporator to a position releasing it. Due to its ability to turn, the pivoting unit (8) together with its parts can easily be cleaned.

Abstract: A method for the powder pack coating of hollow structural components is performed with spherical powder particles of a donor metal in which the hollow component is embedded. During the embedding, the component is subjected to a tumbling motion about several spatial axes to fill all cavities in the component. After the powder pack coating process the cavities of the component are cleared of any excess powder particles under the action of a gas stream. This method is suitable especially for coating engine blades having cooling ducts and cooling air holes, such as turbine blades. The effect of the forced air flow through the internal cavities for the removal of excess powder out of the hollow component is enhanced by simultaneously vibrating the component.

Abstract: A crucible used in a powder pack plating process has an aperture below the upper surface of the powder pack to allow a density driven flow of the plating gas generated by the powder pack to move through the powder pack.

Abstract: An apparatus (10) and a method for applying a chromized coating (46,60,62,66) to one or more of the surfaces of an article (44,56,58,64) particularly in those situations in which the article (44,56,58,64) is intended to be employed in an application wherein the article (44,56,58,64) will be subject to corrosion.

Abstract: The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening.

Abstract: A chromium coating process for coating large size articles such as boiler tubes and boiler tube assemblies, comprises the steps of: (a) mounting on a stationary foundation a retort having a removable cover; (b) covering the articles to be coated in the retort by a chromium source powder containing 3% of ammonium chloride and 42% ferrochromium, the balance consisting of alumina; (c) sealing the cover on the retort; (d) heating the retort to a uniform temperature of 2100.degree. F. for 10 hours; (e) supplying concurrent with the commencement of the heating an inert gas to the interior of the retort; (f) terminating the heating of the retort and shutting off the flow of the inert gas to the retort; (g) cooling the retort and the articles within the retort uniformly throughout to a temperature of 400.degree. F.; (h) removing the cover from the retort; (i) removing the coated articles therefrom.

Abstract: A method of forming a surface layer of carbide, nitride, carbonitride, or solid-solution on the surface of a material to be treated, which comprises disposing in a fluidized bed furnace a treating agent comprising a powder of a refractory material, and a powder of a metal for forming a carbide, nitride, carbonitride or solid-solution or a powder of an alloy thereof, introducing a fluidizing gas into the fluidized bed furnace to fluidize the treating agent and form a fluidized layer, disposing the material to be treated in the fluidized layer, and introducing a predetermined amount of halide into the fluidized layer, and an apparatus for forming the surface layer on the material to be treated, comprising a furnace body for forming the surface layer in the fluidized layer of the treating agent, a heating furnace for heating the fluidized layer, a halide supply pipe in communication with the outside of the furnace body, and a halide gas jetting pipe disposed within the furnace body, which is connected to the hal

Abstract: A method and apparatus for forming a layer of a carbide or nitride of, for example, titanium or vanadium on the surface of material to be treated in a fluidized bed furnace. A refractory powder for forming a fluidized bed, a vessel or vessels filed with powder of a treating agent, and the material to be treated are placed in the furnace. The treating agent includes powder of at least one carbide or nitride forming metal or alloy and powder of at least one compound selected from the group consisting of chlorides, fluorides, bromides, iodides and boro-fluorides of alkali and alkaline earth metals and/or at least one of an ammonium halide and a metal halide. A fluidizing gas is introduced into the furnace under heat to form a fluidized bed in which the surface of the material to be treated is treated. The vessel or vessels are placed in the furnace in a spaced-apart relation from the material to be treated, so that no powder of the treating agent may adhere to the surface of the material to be treated.

Abstract: An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3, are reacted with N.sub.2 and H.sub.2 and thermodynamic and kinetic parameters are manipulated by flow rates and partial pressures of the reactants to achieve the deposition reaction in the temperature range of 250.degree. to 850.degree. C.

Abstract: A method of forming a layer of a nitride or carbonitride of titanium, vanadium or the like on the surface of an article to be treated includes: disposing a treating material composed of refractory powder, powder of a metal or alloy of a nitride forming element and a halide power, and the article to be treated in a fluidized bed furnace; and introducing a nitrogen-containing gas into the furnace under a heated condition to fluidize the treating material, thereby effecting the surface treatment. This method provides a nitride or carbonitride layer having a smooth surface and a uniform thickness rapidly and safely without using hydrogen and a halogen vapor.

Abstract: The invention relates to a process and apparatus for boronizing pieces made of metal or cermet and to surface-boronized pieces. The pieces are placed in a chamber at between 850.degree. and 1,150.degree. C. and they are subjected, in the presence of boron carbide, to a gaseous stream of trifluoroboroxole (BOF).sub.3. The boron carbide is advantageously pulverulent and out of contact with the pieces to be boronized.