Gas Or Vapor Deposition Patents (Class 118/715)
  • Patent number: 10385457
    Abstract: In a raw material gas supply apparatus, a remaining amount of the raw material is calculated by subtracting, from an amount of the raw material filled in a new raw material, a cumulative consumption amount including a consumption amount of the raw material calculated based on an actual flow rate of the raw material gas obtained from an offset value, (m3?(m1+m2)), m1, m2 and m3 being respective measurement values of first and second mass controller, and a mass flow meter, obtained by supplying a carrier gas and a dilution gas in a state where the carrier gas flows through a bypass channel, and an actual flow rate measurement value of the raw material obtained by subtracting the offset value from a value of (m3?(m1+m2)) obtained by supplying the carrier gas and dilution gas in a state where the carrier gas flows through the inside of a raw material container.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: August 20, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Hironori Yagi, Masayuki Moroi
  • Patent number: 10388528
    Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: August 20, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Lee Chen, Zhiying Chen, Jianping Zhao, Merritt Funk
  • Patent number: 10381200
    Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: August 13, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Nguyen, Yogananda Sarode Vishwanath, Xue Yang Chang
  • Patent number: 10370761
    Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: August 6, 2019
    Assignee: ASM AMERICA, INC.
    Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
  • Patent number: 10359743
    Abstract: Electronic device processing systems including environmental control of the factory interface, a carrier purge chamber, and one or more substrate carriers are described. One electronic device processing system has a factory interface having a factory interface chamber, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface, the carrier purge chamber, and the one or more substrate carriers and operational to control an environment at least within the factory interface chamber, carrier purge chamber, and the one or more substrate carriers. Methods for processing substrates are described, as are numerous other aspects.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: July 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Michael R. Rice, Dean C. Hruzek
  • Patent number: 10355208
    Abstract: The present teachings disclose various embodiments of a printing system for printing a substrate, in which the printing system can be housed in a gas enclosure, where the environment within the enclosure can be maintained as a controlled printing environment. A controlled environment of the present teachings can include control of the type of gas environment within the gas enclosure, the size and level particulate matter within the enclosure, control of the temperature within the enclosure and control of lighting. Various embodiments of a printing system of the present teachings can include an X-axis and a Y-axis motion system utilizing linear air-bearing technology, as well as an ultrasonic floatation table as a substrate apparatus that are configured to substantially decrease excess thermal load within the enclosure by, for example, eliminating or substantially minimizing the use of conventional electric motors.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: July 16, 2019
    Assignee: Kateeva, Inc.
    Inventor: Eliyahu Vronsky
  • Patent number: 10351952
    Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuo Yabe, Akira Shimizu
  • Patent number: 10351950
    Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: July 16, 2019
    Assignee: Ultratech, Inc.
    Inventors: Mark Sowa, Robert Kane, Michael Sershen
  • Patent number: 10351951
    Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: July 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Keishin Yamazaki, Satoru Murata, Shinya Morita
  • Patent number: 10354906
    Abstract: A support apparatus and a support method are provided, the support apparatus includes: a support substrate for bearing a supported component, the support substrate having a first main surface facing the supported component and a second main surface positioned on a side opposite to the first main surface; and a pressure distribution plate, arranged on the first main surface of the support substrate and positioned between the support substrate and the supported component, wherein the pressure distribution plate is configured to bring the supported component to be separated from the support substrate.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: July 16, 2019
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventor: Chih-Wei Su
  • Patent number: 10352133
    Abstract: A downhole article comprises a polymer substrate having a surface that is configured for exposure to a well fluid; the substrate comprising a thermoplastic material, an elastomer, or a combination comprising at least one of the foregoing; and a coating disposed on the surface of the polymer substrate; the coating comprising a fluorinated poly-para-xylylene.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: July 16, 2019
    Assignee: BAKER HUGHES, A GE COMPANY, LLC
    Inventors: Anil Sadana, Vipul Mathur, James Edward Goodson, John C. Welch
  • Patent number: 10347517
    Abstract: A diffuser tower assembly having a diffuser with a flared end and a fitting with an offset portion and nipple sized for the flared end. The assembly may be configured for providing low coverage purging. Diffuser tower assemblies may be in the form of a kit for retrofitting existing front opening wafer containers. The inlet fitting may include structure that enhances purge characteristics near the base of the porous media diffuser for enhanced sweeping of the floor of the substrate container. Embodiments of the disclosure generate an uneven flow distribution that provides a non-uniform flow distribution at the opening. In an embodiment, where the opening is in a substantially vertical orientation, the non-uniform flow distribution is tailored to deliver a greater flow rate to the bottom half of the opening than to the top of the opening.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: July 9, 2019
    Assignee: Entegris, Inc.
    Inventors: Mark V. Smith, Christopher Beatty, Murali Bandreddi
  • Patent number: 10347510
    Abstract: A compartment variable device is provided with: a baffle plate which has a plurality of openings and which as a whole has a rectangular shape; a rectangular frame disposed around the baffle plate; a bellows connected to a bottom of the frame; and a bellows support portion to which the lower end of the bellows is fixed. When a transfer arm of an atmosphere-side transfer device is lifted, the frame of the compartment variable device which is engaged with the transfer arm is lifted, thereby extending the bellows. Accordingly, the volume of a gas flow space in an atmospheric pressure transfer chamber is decreased, allowing the atmosphere in the gas flow space in the atmospheric pressure transfer chamber to be replaced in a short time.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: July 9, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Keisuke Kondoh
  • Patent number: 10342900
    Abstract: A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: July 9, 2019
    Assignee: EXOGENESIS
    Inventors: Richard C. Svrluga, Sean R. Kirkpatrick, Stephen M. Blinn
  • Patent number: 10337102
    Abstract: Fabrication method of a graphene film including the following successive steps: placing the substrate and a solid carbon source in a reaction chamber, provided with a gas inlet; and heating the solid carbon source, by flow of a current in said source, under a gas flow, the gas being devoid of hydrocarbon, so as to convert at least a part of the solid carbon source into a graphene film on the substrate.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: July 2, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean Dijon, Anastasia Tyurnina
  • Patent number: 10336656
    Abstract: A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: July 2, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ren-Guan Duan, Thorsten Lill, Jennifer Y. Sun, Benjamin Schwarz
  • Patent number: 10337105
    Abstract: A valve assembly is provided that comprises a vacuum valve including a body and an electrically grounded surface on at least a surface of the body and an electrode extending substantially parallel to the electrically grounded surface and adjacent to the vacuum valve. The vacuum valve assembly also includes a barrier dielectric, a least a portion of which is located between the electrode and the electrically grounded surface. The vacuum valve assembly further includes a dielectric barrier discharge structure formed from the electrically grounded surface, the electrode, and the barrier dielectric. The dielectric barrier discharge structure is adapted to generate a plasma on the electrically grounded surface to clean at least a portion of the vacuum valve.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: July 2, 2019
    Assignee: MKS Instruments, Inc.
    Inventor: Gordon Hill
  • Patent number: 10329668
    Abstract: A first and second process gas is fed into a device during a first and second process step, respectively. The device has an exhaust gas line through which a first and second exhaust gas is conveyed out of the device in the first and second process step, respectively. A first and second exhaust gas device is connected by means of a valve arrangement optionally to the exhaust gas line in a fluidly communicable and separable manner, with a first and second treatment member for treating an exhaust gas produced in the first and second process step, respectively. A gas feed device is arranged between the valve arrangement and the respective treatment members. A control device is provided whose control variable is the pressure difference between the total pressure in the respective exhaust gas devices and is configured to minimize the pressure difference during switching of the valve arrangement.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: June 25, 2019
    Assignee: AIXTRON SE
    Inventors: Patrick Franken, Markus Deufel
  • Patent number: 10325928
    Abstract: Provided are a method of manufacturing a thin film transistor, a dehydrogenating apparatus for performing the method, and an organic light emitting display device including a thin film transistor manufactured by the same. A method of manufacturing a thin film transistor includes reducing a content of oxygen in a chamber for performing a dehydrogenation process of an amorphous silicon layer from a first value to a second value, inserting a substrate on which the amorphous silicon layer is formed into the chamber, heating the inside of the chamber to perform the dehydrogenation process on the amorphous silicon layer, and forming a polysilicon layer by crystallizing the amorphous silicon layer using a laser.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: June 18, 2019
    Assignee: LG Display Co., Ltd.
    Inventor: Sung soo Lee
  • Patent number: 10316429
    Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 11, 2019
    Assignees: Kabushiki Kaisha Toshiba, NuFlare Technology, Inc.
    Inventors: Shinya Higashi, Kaori Deura, Kunihiko Suzuki, Masayoshi Yajima
  • Patent number: 10316409
    Abstract: A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: June 11, 2019
    Assignee: Novellus Systems, Inc.
    Inventor: Bart J. van Schravendijk
  • Patent number: 10312057
    Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: June 4, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masayuki Kohno, Yusuke Yoshida, Naoki Matsumoto, Ippei Shimizu, Naoki Mihara, Jun Yoshikawa, Michitaka Aita, Yoshikazu Azumaya, Junsuke Hoshiya
  • Patent number: 10312058
    Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Soo Young Choi, John M. White, Qunhua Wang, Li Hou, Ki Woon Kim, Shinichi Kurita, Tae Kyung Won, Suhail Anwar, Beom Soo Park, Robin L. Tiner
  • Patent number: 10304666
    Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and forming an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryo Sasaki, Yusei Kuwabara
  • Patent number: 10304703
    Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: May 28, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Roman Gouk, Han-Wen Chen, Steven Verhaverbeke, Jean Delmas
  • Patent number: 10304702
    Abstract: An EFEM includes a wafer transportation part having a wafer transportation room passed by a wafer transported to a processing room and a load port part airtightly connecting a main opening formed on a container housing the wafer to the room. The transportation part includes a downward current forming device for forming a downward current in the room and a current plate arranged in the room and partly introducing the current into the container connected to the room via the opening. The load port part includes an installation stand for installing the container, a bottom nozzle for communicating with a bottom hole formed at a position distant from the opening more than a bottom surface middle on a bottom surface of the container, and a gas discharge passage for discharging a gas in the container to an outside thereof via the nozzle.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: May 28, 2019
    Assignee: TDK CORPORATION
    Inventors: Tsutomu Okabe, Hidetoshi Horibe
  • Patent number: 10301181
    Abstract: Polycrystalline silicon is produced by depositing polycrystalline silicon onto U-shaped slim rods, deinstalling at least one polycrystalline silicon rod pair from the reactor, removing graphite residues from the electrode-side ends of the polycrystalline silicon rods of the polycrystalline silicon rod pair, and comminuting the polycrystalline silicon rods into rod pieces or into chunks, wherein prior to deinstallation of the polycrystalline silicon rod pairs from the reactor, the polycrystalline silicon rod pairs are at least partially with a plastics material bag made of a plastics material film having a thickness of more than 150 ?m, wherein the plastics material bag comprises weights at its opening. The invention further relates to a polycrystalline silicon rod pair which has a rod diameter of 190 mm or more and is covered by a plastics material bag made of a plastics material film having a thickness of more than 150 ?m.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: May 28, 2019
    Assignee: WACKER CHEMIE AG
    Inventors: Matthias Vietz, Stefan Faerber
  • Patent number: 10297474
    Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: May 21, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Jeong-Nam Han, Kee-Sang Kwon, Doo-Sung Yun, Won-Sang Choi
  • Patent number: 10294565
    Abstract: A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: May 21, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kiichi Takahashi, Yuya Sasaki, Kosuke Takahashi
  • Patent number: 10294562
    Abstract: Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). The flow impeding structure may exert a flow resistance on the gas flow which is greater in a central zone (Z) than in edge zones (R) of the intermediate space (9), causing gas to flow into the suction opening (2) at a substantially uniform gas flow speed across the cross section of the suction opening (2).
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: May 21, 2019
    Assignee: AIXTRON SE
    Inventors: Carl Galewski, Stephen Edward Savas, Merim Mukinovic
  • Patent number: 10290519
    Abstract: A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: May 14, 2019
    Assignee: KATHOLIEKE UNIVERSITEIT LEUVEN
    Inventors: Jean-Pierre Locquet, Chen-Yi Su
  • Patent number: 10283321
    Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: May 7, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jang-Gyoo Yang, Matthew L. Miller, Xinglong Chen, Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Dmitry Lubomirsky
  • Patent number: 10283390
    Abstract: An apparatus for processing a substrate includes a load port on that a substrate transfer container accommodating a substrate is laid, a processing part configured to process a substrate, and an index part including an index robot configured to carry a substrate between the substrate transfer container and the processing part, wherein the processing part includes a first transfer chamber configured to have a first main carrying robot carrying a substrate and disposed adjacent to the index part, a second transfer chamber configured to have a second main carrying robot carrying a substrate and disposed adjacent to the first transfer chamber, and a shuttle buffer part configured to move between the first transfer chamber and the second transfer chamber for transferring a substrate between the second main carrying robot and the index robot.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: May 7, 2019
    Assignee: Semes Co., Ltd.
    Inventors: Daehun Kim, Gui Su Park
  • Patent number: 10281214
    Abstract: A heat treatment apparatus is provided with a reaction tube having a furnace opening formed at a lower end thereof, a lid body configured to hermetically seal the furnace opening of the reaction tube, a heat treatment boat supported on the lid body through a leg, and a rotating shaft extending through the lid body. The rotating shaft is connected to a lower end of the leg and configured to rotate the leg. The lid body is provided with a surrounding ring protruding upward to surround the lower end of the leg. An inert gas is supplied from an inert gas supply unit to a space between the lid body and the rotating shaft and discharged from a space between the lower end of the leg and the surrounding ring into the reaction tube.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: May 7, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hirofumi Kaneko, Kenichi Chiba
  • Patent number: 10269573
    Abstract: A device includes a pedestal. The pedestal includes a ground electrode, a central portion, and a peripheral portion. The ground electrode includes a top surface from which the peripheral portion is projected, thereby having a height difference between the central portion and the peripheral portion.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Kun-Mo Lin, Keith Kuang-Kuo Koai, Chih-Tsung Lee, Victor Y. Lu, Yi-Hung Lin
  • Patent number: 10266946
    Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: April 23, 2019
    Assignee: ASM AMERICA, INC.
    Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
  • Patent number: 10269600
    Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: April 23, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Patent number: 10253428
    Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: April 9, 2019
    Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Tianru Wu, Xuefu Zhang, Guangyuan Lu, Chao Yang, Haomin Wang, Xiaoming Xie, Mianheng Jiang
  • Patent number: 10249511
    Abstract: An inductively coupled plasma processing apparatus comprises a vacuum chamber, a vacuum source, and a substrate support on which a semiconductor substrate is supported. A ceramic showerhead forms an upper wall of the vacuum chamber. The ceramic showerhead includes a gas plenum in fluid communication with a plurality of showerhead gas outlets for supplying process gas to the interior of the vacuum chamber, and a central opening configured to receive a central gas injector. A central gas injector is disposed in the central opening of the ceramic showerhead. The central gas injector includes a plurality of gas injector outlets for supplying process gas to the interior of the vacuum chamber. An RF energy source energizes the process gas into a plasma state to process the semiconductor substrate. The flow rate of the process gas supplied by the central gas injector and the flow rate of the process gas supplied by the ceramic showerhead can be independently controlled.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 2, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Saravanapriyan Sriraman, Alexander Paterson
  • Patent number: 10249475
    Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: April 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Aniruddha Pal, Victor Calderon, Martin Jeffrey Salinas, Valentin N. Todorow
  • Patent number: 10227695
    Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: March 12, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dale R. Du Bois, Mohamad A. Ayoub, Robert Kim, Amit Bansal, Mark Fodor, Binh Nguyen, Siu F. Cheng, Hang Yu, Chiu Chan, Ganesh Balasubramanian, Deenesh Padhi, Juan Carlos Rocha
  • Patent number: 10229845
    Abstract: Provided is a substrate processing apparatus.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: March 12, 2019
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Jun-Jin Hyon, Byoung-Gyu Song, Kyong-Hun Kim, Yong-Ki Kim, Yang-Sik Shin, Chang-Dol Kim
  • Patent number: 10221478
    Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: March 5, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kensaku Narushima, Daisuke Toriya, Kentaro Asakura, Seishi Murakami
  • Patent number: 10224182
    Abstract: A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: March 5, 2019
    Assignee: NOVELLUS SYSTEMS, INC.
    Inventors: Douglas Keil, Edward Augustyniak, Karl Leeser, Mohamed Sabri
  • Patent number: 10221483
    Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: March 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kartik Shah, Chaitanya A. Prasad, Kevin Joseph Bautista, Jeffrey Tobin, Umesh M. Kelkar, Lara Hawrylchak
  • Patent number: 10206429
    Abstract: The present disclosure relates to aerosol delivery devices, methods of forming such devices, and elements of such devices. In some embodiments, the present disclosure provides devices configured for vaporization of an aerosol precursor composition through radiant heating. The radiant heat source may be a laser diode or further element suitable for providing electromagnetic radiation, and heating may be carried out within an optional chamber, which can be a radiation-trapping chamber. In some embodiments, an interior of such chamber may be configured as a black body or as a white body.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: February 19, 2019
    Assignee: RAI Strategic Holdings, Inc.
    Inventors: Michael F. Davis, Yi-ping Chang, Stephen Benson Sears, Karen V. Taluskie, Susan K. Pike, Nicholas Harrison Watson, Stephen C. Reynolds
  • Patent number: 10208398
    Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.
    Type: Grant
    Filed: November 27, 2015
    Date of Patent: February 19, 2019
    Assignee: SHOWA DENKO K.K.
    Inventors: Daisuke Muto, Jun Norimatsu
  • Patent number: 10208378
    Abstract: A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: February 19, 2019
    Assignee: Hermes-Epitek Corp.
    Inventors: Junji Komeno, Noboru Suda, Takahiro Oishi, Tsan-Hua Huang, Shih-Yung Shieh
  • Patent number: 10202687
    Abstract: There is provided a substrate processing method using a processing chamber that is provided with a first process gas supply region, a first exhaust port through which a first process gas supplied to the first process gas supply region is exhausted, a second process gas supply region, a second exhaust port through which a second process gas supplied to the second process gas supply region is exhausted, and a communication space through which the first exhaust port and the second exhaust port communicate with each other, wherein an exhaust pressure in the first exhaust port is set higher than an exhaust pressure in the second exhaust port by a predetermined pressure so as to perform a substrate process while preventing infiltration of the second process gas into the first exhaust port.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: February 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigehiro Miura, Jun Sato
  • Patent number: 10201824
    Abstract: One processing block is arranged between an indexer block and another processing block. One substrate is transported to a main transport mechanism in the one processing block by a main transport mechanism in the indexer block, transported to a first processing section and a thermal processing section by the main transport mechanism in the one processing block and processing is performed on the substrate. The substrate after the processing is transported to the main transport mechanism in the indexer block by the main transport mechanism in the one processing block. Another substrate is transported to a sub-transport mechanism in a sub-transport chamber by the main transport mechanism in the indexer block, and is transported to a main transport mechanism in another processing block by the sub-transport mechanism in the sub-transport chamber.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: February 12, 2019
    Assignee: SCREEN Semiconductor Solutions Co., Ltd.
    Inventor: Yukihiko Inagaki