Abstract: A mask frame support unit includes a case, a protruding body extending below the case, and a station having a flat head disposed above the case. The protruding body includes a tapered region and a cylindrical region. The tapered region includes a first end having a first diameter coupled to the case and comprising a second end having a second diameter opposite the first end. The second diameter is less than the first diameter, and the tapered region is coupled to the cylindrical region at the second end. The case houses a number of components including an upper receiving plate in contact with the station, a lower receiving plate disposed underneath the upper receiving plate, a flat head unit movement support mechanism disposed between the lower receiving plate and the body, and a centering component.

Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

Abstract: An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of ?0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of ?0.115 to ?0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of ?0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: A method for reducing sticking of an object to a surface used in a lithography process includes receiving, at a control computer, instructions for a tool configured to modify the surface and forming, in a deterministic manner based on the instructions received at the control computer, a modified surface having a furrow and a ridge, wherein the ridge reduces the sticking by reducing a contact surface area of the modified surface. Another apparatus includes a modified surface that includes furrows and ridges forming a reduced contact surface area to reduce a sticking of an object to the modified surface, the ridges having an elastic property that causes the reduced contact surface area to increase when the plurality of ridges is elastically deformed.

Abstract: A plasma treatment apparatus includes a treatment chamber 2 and a gas supply device 30 for supplying a treatment gas into the treatment chamber 2. The gas supply device 30 includes: a mass flow controller box 40 having an intake port 41 and an exhaust port 42; a plurality of pipes 43 to each of which a mass flow controller (43a) is attached; and a plurality of pipes 52 which are connected to the pipes 43 in the mass flow controller box 40 and connected to a plurality of pipes 54 as supply sources of the treatment gas by a plurality of joints 53 outside the mass flow controller box. At least one of the joints 53 is covered by a pipe cover 60 so that the joint 53 is hermetically sealed. The inside of the pipe cover 60 and the inside of the mass flow controller box 40 are communicated by a communicating member (circumferential pipe 61, tube 62).

Abstract: A supply device for supplying powder, includes: a storage part in which the powder is stored; a supply control part which is provided such that the stored powder flows therein and remains therein, and from which the powder is discharged by external force; and a supply driving part which provides force to the supply control part. The supply driving part includes a control period in which a moving speed is increased and then reduced in a process of reciprocating the supply control part. The control period is set to perform a movement by a distance which is obtained by excluding or adding a predetermined distance from or to a total distance in the process of reciprocating the supply control part.

Abstract: According to an embodiment, a work support device includes a measurement unit and an irradiation control unit. The measurement unit measures an in-passage structure of a passage inside of which a user can work. The irradiation control unit controls an irradiation unit to emit light indicative of a work region to a corrected work position obtained by correcting work position information set based on a predetermined designed in-passage structure indicative of an ideal structure in the passage by using a result of the measurement by the measurement unit.

Abstract: Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A method for manufacturing a semiconductor structure includes: a substrate is provided, an isolation trench being formed on the substrate; a silicon-rich isolation layer is formed in the isolation trench, the silicon-rich isolation layer covering an inner surface of the isolation trench; and an isolation oxide layer is formed in the isolation trench. The isolation oxide layer fills up the isolation trench.

Abstract: Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.

Abstract: A vapor deposition device for forming a ceramic coating on a substrate, the device including a coating chamber, loading chambers, substrate support mechanisms, horizontal moving mechanisms, and reversing mechanisms, and configured as follows. The coating chamber and each loading chambers are connected individually to a vacuumizer and are connected to each other at their openings. In the coating chamber, an electron gun is provided that emits an electron beam with which the held ceramic raw material is irradiated. Each of the substrate support mechanisms includes left and right partition walls, a left substrate support plate on the left side of the left partition wall, and a right substrate support plate on the right side of the right partition wall. Each of the substrate support plates has multiple substrate mounting portions for mounting substrates thereon.

Abstract: A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.

Abstract: A deposition device includes a chamber, a support member, a ground member, and a first fixing member. The chamber includes a lower portion and a side wall. The support member is located in a space defined by the lower portion and the side wall of the chamber, and includes a side surface. The ground member is disposed between the support member and the lower portion of the chamber. The first fixing member includes a first body and a first blocking part. The first body is located under a first end portion of the ground member, and includes a side surface. The first blocking part is located on the side surface of the first body and the side surface of the support member, and extends along the side surface of the support member. The first blocking part shields the first end portion of the ground member from view.

Abstract: The present invention relates to a substrate processing apparatus capable of shortening a process time, and the substrate processing apparatus according to the present invention comprises an index chamber having a transfer robot loading/unloading a substrate; a process chamber having a heating means heating the substrate and processing the substrate; a loadlock chamber disposed between the index chamber and the process chamber; and a conveying chamber having a conveying robot conveying the substrate between the process chamber and the loadlock chamber, wherein a pre-heating means is provided in the conveying robot to pre-heat the substrate in a state before processing.

Abstract: Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

Abstract: There is provided apparatus and a method of releasing one or more seized components of an item using an adapter in location on said item, a vibration generating means in location with said adapter so as to allow vibration to be imparted from the said vibration generating means to the said one or more seized components; retaining the vibration generating means with the said item at a required orientation via engagement means, operating the vibration generating means and control means allow the control of the frequency of vibration to be within a predetermined range. This therefore allows the effective releases of the component of the item to allow the item, such as a valve of a pipeline to then be operated.

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

Abstract: Embodiments described herein relate to oxygen cleaning chambers and a method of atomic oxygen cleaning a substrate. The oxygen cleaning chambers and method of atomic oxygen cleaning a substrate provide for generation of atomic oxygen in situ to oxidize materials on the surfaces of the substrate. The atomic oxygen cleaning chamber includes a chamber body, a chamber lid, a processing volume defined by the chamber body and the chamber lid, an UV radiation generator including one or more UV radiation sources, a pedestal disposed in the processing volume, and a gas distribution assembly. The pedestal has a processing position corresponding to a distance from the UV radiation generator to an upper surface of the pedestal. The gas distribution assembly is configured to be connected to an ozone generator to distribute ozone over the upper surface of the pedestal.

Abstract: A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.

Abstract: An apparatus for treating a substrate is provided. The apparatus for treating the substrate includes a high pressure chamber to provide a treatment space to perform a process of treating the substrate using a process fluid, a fluid supply source to provide the process fluid to the high pressure chamber, a fluid supply unit to supply the process fluid to the treatment space of the high pressure chamber, an exhaust unit to exhaust the process fluid in the high pressure chamber, and a pre-vent unit to vent a process fluid remaining inside a supply line.

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.

Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

Abstract: The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate.

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

Abstract: A device for manufacturing an electrode assembly for removing foreign particles through air is provided. The device includes a winding portion; an electrode transfer line; an air blower installed on a top portion of the device and blowing air to a bottom portion of the device; and an outlet for discharging air moved to the bottom portion by the air blower.

Abstract: A calibration method for a liquid flowmeter comprising: providing a first tank (12) for receiving said liquid to be measured and a liquid storage tank (14) connected to said first tank (12); providing a liquid delivering line (9) for conveying the liquid from said liquid storage tank (14) to an external device; providing a weighing sensor (22) for weighing the liquid contained in either the first tank (12) or the liquid storage tank (14), wherein during performing the calibration for the flowmeter (20): disconnecting the liquid delivering line (9) in a conveyance direction downstream of the liquid flowmeter (20) from the external device; connecting said liquid delivering line (9) in the conveyance direction downstream of said liquid flowmeter (20) to a calibrating line (7) connected to said first tank (12); and determining a flow rate of the conveyed liquid within a predetermined time interval based on the change in the liquid weight measured by said weighing sensor (22) in said predetermined time interval, w

Abstract: The gas supply system of this invention is furnished with a cylinder apparatus having a pneumatic valve that supplies process gas to a process chamber, and a solenoid valve that opens or closes said pneumatic valve by supplying or stopping the flow of valve actuating gas to said pneumatic valve; and a gas supply control apparatus that controls the actuation of the solenoid valve. In addition, said gas supply control apparatus comprises a main controller that controls the actuation of said solenoid valve during normal operation, and a sub-controller that senses an abnormal state of said main controller and if an abnormality is sensed, controls the actuation of said solenoid valve instead of said main controller.

Abstract: Methods and devices for controlling pressures in microenvironments between a deposition apparatus and a substrate are provided. Each microenvironment is associated with an aperture of the deposition apparatus which can allow for control of the microenvironment.

Abstract: A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

Abstract: The invention discloses a showerhead assembly including a male board with a top surface and a bottom surface and having an injector extending from the bottom surface to inject a first gas; and a female board with a top surface and a bottom surface and having a cavity formed on the top surface. The cavity is communicatively coupled to a gas outlet through which a second gas is guided toward to the outlet. The cavity is configured to receive the first gas from the male board such that the first gas and the second gas mix and then is exhausted via the gas outlet.

Abstract: A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

Abstract: A vacuum chuck is provided, comprising: a vacuum buffer in fluid communication with a vacuum source, the vacuum buffer being an enclosed volume in the vacuum chuck; a top plate, defining surface features on a first side, and an internal network of distribution channels open to the first side via through holes; and a flow valve configured to control fluid communication between the network of distribution channels and the vacuum buffer. By opening the flow valve, negative pressure is applied from between a substrate disposed on the first side of the top plate through the through holes into the vacuum buffer, thereby flattening the substrate against at least part of the first side of the top plate.

Abstract: A method of coating a component including aluminizing an array of internal passageways within the component; and chromizing a portion of the array of internal passageways within the component. A component, including an airfoil having an array of aluminized internal passageways, the array of aluminized internal passageways chromized up to a demarcation.

Abstract: A method for detecting positions of wafers includes: rotating a rotation table with a wafer thereon in a first direction at a first speed; detecting a contour of the wafer rotating in the first direction at the first speed to provide contour data; rotating the rotation table in a second direction at a second speed when an aiming feature of the wafer passes the detector in the first direction at the first speed; detecting the contour of the wafer rotating in the second direction at the second speed to provide new contour data; and stopping the rotation of the rotation table and the detection of the wafer according to an accumulation of contour data and corresponding rotation angles, to estimate an eccentric position of the wafer and a position of the aiming feature when the aiming feature passes the detector in the second direction at the second speed.