Gas Or Vapor Deposition Patents (Class 118/715)
  • Patent number: 10896831
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: January 19, 2021
    Assignees: NuFlare Technology, Inc., Showa Denko K.K., Central Research Institute of Electric Power Industry
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
  • Patent number: 10883190
    Abstract: The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: January 5, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Edric Tong, James Francis Mack, Paul Brillhart
  • Patent number: 10886142
    Abstract: A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: January 5, 2021
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Zhimin Bai, Qiang Li, Bin Deng, Yuchun Deng, Hougong Wang, Peijun Ding
  • Patent number: 10879090
    Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ilker Durukan, Joel M. Huston, Dien-Yeh Wu, Chien-Teh Kao, Mei Chang
  • Patent number: 10879099
    Abstract: A humidity-controlled storage device includes a plurality of panels configured to form an enclosed volume. A first panel of the plurality of panels includes inlet and outlet ports. The storage device further includes a purge system with a gas inlet pipe, a gas supply system, and a gas extraction system. The gas inlet pipe includes a nozzle and a cylindrical portion coupled to the inlet port. The gas supply system is configured to supply a purge gas to the gas inlet pipe. The gas inlet pipe is configured to output the purge gas into the enclosed volume in a direction that creates a circular or an oval gas flow pattern within the enclosed volume. The gas extraction system is coupled to the outlet port and is configured to extract the purge gas from the enclosed volume.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Chun Yang, Yi-Ming Lin, Chao-Hung Wan, Hsiu Hao Hsu, Guan Jung Chen, Po-Wei Liang
  • Patent number: 10870913
    Abstract: A processing device according to one embodiment includes an object placement unit, a source placement unit, a collimator, and a temperature adjusting unit. The object placement unit is configured to have an object arranged. The object placement unit is configured to have an object placed thereon. The source placement unit is arranged apart from the object placement unit and configured to have a particle source placed thereon, the particle source being capable of ejecting a particle toward the object. The collimator configured to be arranged between the object placement unit and the source placement unit, includes walls, and is provided with through holes formed by the walls and extending a direction from the object placement unit to the source placement unit. The temperature adjusting unit is configured to adjust a temperature of the collimator.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: December 22, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masakatsu Takeuchi, Shiguma Kato, Yasuhiro Aoyama, Takahiro Terada, Yoshinori Tokuda
  • Patent number: 10857625
    Abstract: A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: December 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Gang Peng, David W. Groechel, Jenn C. Chow, Tuochuan Huang, Han Wang
  • Patent number: 10858737
    Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: December 8, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Carl White, Eric Shero, Jereld Lee Winkler, David Marquardt
  • Patent number: 10851457
    Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 1, 2020
    Assignee: Lam Research Corporation
    Inventors: Fayaz Shaikh, Nick Linebarger, Curtis Bailey
  • Patent number: 10844490
    Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: November 24, 2020
    Assignee: HERMES-EPITEK CORP.
    Inventors: Noboru Suda, Junji Komeno, Takahiro Oishi, Shih-Yung Shieh, Tsan-Hua Huang
  • Patent number: 10845704
    Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an infiltration process to introduce a metallic compound into the photoresist to enhance a sensitivity of the photoresist layer to an extreme ultraviolet (EUV) radiation; performing an exposing process to the photoresist layer using the EUV radiation; and performing a developing process to the photoresist layer to form a patterned resist layer.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Christine Y Ouyang
  • Patent number: 10847351
    Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: November 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Yogananda Sarode Vishwanath, Xue Yang Chang
  • Patent number: 10840061
    Abstract: A processing chamber in a substrate processing system includes an upper surface, sidewalls, and a bottom surface and a showerhead connected to and extending downward from the upper surface of the processing chamber. The showerhead includes a stem portion and a base portion. An inverted conical surface is arranged adjacent to the upper surface and the sidewalls of the processing chamber and includes an angled surface arranged to redirect gas flow above the showerhead from a horizontal direction to a downward direction and into a gap between a radially outer portion of the base portion and the sidewalls of the processing chamber.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: November 17, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Richard Phillips, Ryan Blaquiere, Shankar Swaminathan
  • Patent number: 10837109
    Abstract: A chemical vapor infiltration and deposition (CVI/CVD) reactor assembly includes a CVI/CVD reactor and a reactant gas feed source. The CVI/CVD reactor includes a first inlet at a first end of the CVI/CVD reactor, a second inlet at a second end of the CVI/CVD reactor opposite the first end, a first outlet at the second end, a second outlet at the first end, and a chamber in fluid communication with the first and second inlets and first and second outlets and configured to hold a substrate. The reactant gas feed source is interchangeably and fluidly connected to the first and second inlets by first and second valved gas lines, respectively.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: November 17, 2020
    Assignee: United Technologies Corporation
    Inventors: Ying She, Cristal Chan
  • Patent number: 10829855
    Abstract: Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: November 10, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Anh N. Nguyen, Dmitry Lubomirsky, Mehmet Tugrul Samir
  • Patent number: 10825659
    Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: November 3, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jason Lee Treadwell, Ivelin Angelov, Linda Marquez, Cristian Siladie
  • Patent number: 10822694
    Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: November 3, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sukjin Chung, Bongjin Kuh, Kook Tae Kim, In-Sun Yi, Soojin Hong
  • Patent number: 10822721
    Abstract: A method to improve the MOCVD reaction by protection film on the stainless steel body in the MOCVD reaction chamber. The film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. The film is a compound of at least one of Al, Ga and Mg and at least one of oxygen or nitrogen, or other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. The film could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has compact organization with porosity of less than 1%, and thickness of 1 nm to 0.5 mm.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: November 3, 2020
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA
    Inventors: Xiaoming He, Shiping Guo
  • Patent number: 10825665
    Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: November 3, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ludovic Godet, Huixiong Dai, Srinivas D. Nemani, Ellie Y. Yieh, Nitin Krishnarao Ingle
  • Patent number: 10808310
    Abstract: Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: October 20, 2020
    Assignee: APPLIED MATEIRALS, INC.
    Inventors: Vishwas Kumar Pandey, Kartik Shah, Edric Tong, Prashanth Vasudeva
  • Patent number: 10799955
    Abstract: In a method of manufacturing metal powders in a continuous type, metal is heated at a temperature greater than a melting point to form a liquid phase metal, and the liquid phase metal and an emulsion carrier, which is emulsified without reacting with the liquid phase metal, are supplied into a container, and the liquid phase metal and the emulsion carrier are emulsified through Taylor flow to form an emulsion solution. The emulsion solution is discharged from the container, and then, the emulsion solution is cooled at a temperature smaller than the melting point to selectively solidifying the liquid phase metal in the emulsion solution to form the metal powders.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: October 13, 2020
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Woo Young Yoon, Jun Kyu Lee, Sung Man Cho
  • Patent number: 10804099
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: October 13, 2020
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Patent number: 10800659
    Abstract: For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: October 13, 2020
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shuichi Miyao, Shigeyoshi Netsu, Junichi Okada
  • Patent number: 10804121
    Abstract: According to an embodiment, a substrate treatment apparatus includes, a substrate support unit supporting a substrate, a rotary unit rotating the substrate, a treatment liquid supply unit supplying treatment liquid to a surface of the substrate, and a controller performing liquid discharge treatment to change liquid discharge velocity at which the treatment liquid is discharged from the substrate, at preset predetermined timing, during substrate treatment in which the treatment liquid is supplied while the substrate is rotated, with the treatment continued.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: October 13, 2020
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Koichi Hamada, Nobuo Kobayashi
  • Patent number: 10801106
    Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: October 13, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Ryoko Yamada, Jun Kawahara, Kazuo Sato
  • Patent number: 10801110
    Abstract: A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: October 13, 2020
    Assignee: HERMES-EPITEK CORPORATION
    Inventor: Shih-Yung Shieh
  • Patent number: 10787742
    Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Ying Xiao, Chin-Hsiang Lin
  • Patent number: 10790176
    Abstract: A substrate carrier may include a carrier body and a first sensor unit. The carrier body may include an internal space, an inlet port and an outlet port. The internal space may be configured to receive a substrate. A purge gas may be introduced into the internal space through the inlet port. A gas in the internal space may be exhausted through the outlet port. The first sensor unit may be at the outlet port and configured to detect environmental properties of the internal space in real time. Thus, a generation or cause of a contaminant in the carrier body may be accurately identified.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Du-Sik Bae, Hang-Ryong Lim, Se-Won Ko, Yoon-Mi Lee, Jin-Ho Kim, Jung-Dae Park, Min-Seon Lee, Yeong-Cheol Lee
  • Patent number: 10781516
    Abstract: A chemical deposition apparatus having a chemical deposition chamber formed within the chemical isolation chamber includes a gas seal. The chemical deposition chamber includes a showerhead module having a faceplate with gas inlets to deliver reactor chemistries to a wafer cavity for processing a semiconductor substrate. The showerhead module includes primary exhaust gas outlets to remove reaction gas chemistries and inert gases from the wafer cavity. An inert gas feed delivers seal gas which flows radially inwardly at least partly through a gap between a step of the showerhead module and the pedestal module to form a gas seal. Secondary exhaust gas outlets withdraw at least some of the inert gas flowing through the gap to provide a high Peclet number.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: September 22, 2020
    Assignee: Lam Research Corporation
    Inventors: Ramesh Chandrasekharan, Jeremy Tucker, Saangrut Sangplung
  • Patent number: 10777439
    Abstract: There is provided a technique that includes: a reactor including a process chamber where substrate is processed, the reactor being fixed to a vacuum transfer chamber; a substrate mounting stand disposed in the reactor and having substrate mounting surface where the substrate is mounted; a heater heating the substrate; a gas supply part supplying gas into the process chamber; an extraction part extracting basic information for estimating position of the substrate mounting surface; a calculation part calculating estimated position information of center of the substrate mounting surface based on the basic information; a transfer robot disposed in the vacuum transfer chamber and including an end effector supporting the substrate when the substrate is transferred; and a controller performing control to set target coordinate of the end effector according to the estimated position information, move the end effector to the target coordinate, and mount the substrate on the substrate mounting surface.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: September 15, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Satoshi Takano
  • Patent number: 10777386
    Abstract: Methods for controlling glow discharge in a plasma chamber are disclosed. One method includes connecting a radio frequency (RF) generator to a top electrode of a chamber, the chamber having chamber walls coupled to ground and connecting the RF generator to a bottom electrode of the chamber. Identifying a process operation of deposition to be performed in the chamber and setting an RF signal from the RF generator to be supplied to the top electrode at a first phase. And, setting the RF signal from the RF generator to be supplied to the bottom electrode at a second phase. The first phase and the second phase being adjustable to a phase difference to cause the plasma glow discharge to be controllably positioned within the chamber based on the phase difference.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: September 15, 2020
    Assignee: Lam Research Corporation
    Inventors: Aaron Bingham, Patrick Van Cleemput
  • Patent number: 10774420
    Abstract: According to an embodiment, a flow passage structure includes a member. The member has a surface and is provided with a first passage, a plurality of first openings, a second passage, and a plurality of second openings. The first passage includes a plurality of first closed path portions connected to each other. The first openings is connected to the first passage and is opened in the surface. The second passage includes a plurality of second closed path portions connected to each other. The second openings is connected to the second passage and is opened in the surface. The first closed path portions pass through the second closed path portions while being isolated from the second closed path portions. The second closed path portions pass through the first closed path portions while being isolated from the first closed path portions.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: September 15, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takahiro Terada, Shiguma Kato, Shinya Higashi, Masayuki Tanaka, Takuya Matsuda
  • Patent number: 10766824
    Abstract: Methods comprise performing two or more thermal cycles on an article comprising a body and a ceramic coating. Each thermal cycle of the two or more thermal cycles comprise heating the ceramic article to a target temperature at a first ramping rate. Each thermal cycle further comprises maintaining the article at the target temperature for a first duration of time and then cooling the article to a second target temperature at a second ramping rate. The method further comprises submerging the article in a bath for a second duration of time to remove the particles from the ceramic coating.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: September 8, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kaushal Gangakhedkar, Jennifer Y. Sun, Xiao-Ming He
  • Patent number: 10772181
    Abstract: A plasma generation device including an electric power supply device to supply electric power to multiple electrodes arranged in a reaction chamber; a processing gas supply device to supply a processing gas to the reaction chamber; and a control device to control operation of the electric power supply device and the processing gas supply device in either of a first operation mode in which, when a stop signal is received while electric power is being supplied to the electrodes in a state with the processing gas being supplied to the reaction chamber, supply of electric power to the electrodes is stopped and supply of the processing gas to the reaction chamber is stopped, and a second operation mode in which supply of electric power to the electrodes is stopped, but the processing gas continues to be supplied to the reaction chamber.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: September 8, 2020
    Assignee: FUJI CORPORATION
    Inventor: Wataru Kusaka
  • Patent number: 10770300
    Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
  • Patent number: 10767261
    Abstract: The invention relates to a device for vacuum coating substrates in a vacuum chamber, comprising an elongated evaporator array having a plurality of evaporator elements arranged along a longitudinal axis and a first substrate carrier unit which is associated with the evaporator array and has a first pylon that can be rotated about a first axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the first rotational axis. The device is characterised in that at least one second substrate carrier unit is provided, which is associated with the evaporator array and has a second pylon that can be rotated about a second axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the second rotational axis.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: September 8, 2020
    Assignee: Leybold Optics GmbH
    Inventors: Torsten Schmauder, Gunter Kern
  • Patent number: 10763137
    Abstract: For enhancing productivity, an apparatus comprises a vertical type process furnace configured to simultaneously process N substrates (1<N); a loading chamber provided under the vertical type process furnace and configured to transfer the substrate retainer into or out of the vertical type process furnace; a plurality of single-wafer type process furnaces provided adjacent to the loading chamber, each of the plurality of single-wafer type process furnaces being stacked in at least 2 stages and configured to simultaneously process M substrates (M<N); and a transfer chamber module provided adjacent to the loading chamber and the plurality of the single-wafer type process furnaces and provided with a transfer device.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: September 1, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Satoshi Takano
  • Patent number: 10760161
    Abstract: Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shu-Kwan Lau, Mehmet Tugrul Samir, Aaron Miller
  • Patent number: 10757797
    Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: August 25, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Rongping Wang, Jibing Zeng, David Muquing Hou, Michael S. Cox, Zheng Yuan, James L'Heureux
  • Patent number: 10752991
    Abstract: Implementations of the present disclosure provide an apparatus for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for thermal processing a substrate. The apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas towards the edge of the substrate advantageously controls growth uniformity throughout the substrate, i.e., from the center to the edge. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: August 25, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Eric Kihara Shono
  • Patent number: 10745807
    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: August 18, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Haitao Wang, Hamid Noorbakhsh, Chunlei Zhang, Sergio Fukuda Shoji, Kartik Ramaswamy, Roland Smith, Brad L. Mays
  • Patent number: 10741366
    Abstract: A wafer process chamber includes a wafer support in the wafer process chamber, the wafer support configured to support a wafer. The process chamber includes a gas diffuser unit within the wafer process chamber. The gas diffuser unit includes at least one controllable diffuser configured to generate one or more controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The gas diffuser unit includes a power source coupled to the at least one controllable diffuser, the power source configured to supply power to the at least one controllable diffuser to generate the one or more controllable forces. The gas diffuser unit includes a controller coupled to the power source, the controller configured to control the power supplied by the power source to the at least one controllable diffuser.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien Kuo Huang, Shih-Wen Huang, Joung-Wei Liou, Chia-I Shen, Fei-Fan Chen
  • Patent number: 10734584
    Abstract: A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: August 4, 2020
    Assignee: AIXTRON SE
    Inventors: Markus Gersdorff, Markus Jakob, Markus Schwambera
  • Patent number: 10731255
    Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: August 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Manabu Honma, Yuka Nakasato, Kohei Doi
  • Patent number: 10724138
    Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: July 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Kien N. Chuc, Sungjin Kim, Yanjie Wang
  • Patent number: 10718049
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad Rasheed, Rongjun Wang, Zhendong Liu, Xinyu Fu, Xianmin Tang
  • Patent number: 10714354
    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: July 14, 2020
    Assignee: Lam Research Corporation
    Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
  • Patent number: 10704147
    Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: July 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad M. Rasheed, Muhannad Mustafa, Hamid Tavassoli, Steven V Sansoni, Cheng-Hsiung Tsai, Vikash Banthia
  • Patent number: 10704146
    Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support shaft assembly has a ring shaped susceptor, a disc shaped heat plate, and a support shaft system. The support shaft system supports the susceptor and the heat plate, such that the susceptor is supported above the heat plate defining a gap between the heat plate and the susceptor. In another embodiment, the heat plate includes a plurality of grooves and the susceptor includes a plurality of fins. The fins are configured to sit within the grooves such that the susceptor is supported above the heat plate, defining a gap between the heat plate and the susceptor. In another embodiment, a method of processing a substrate in the aforementioned embodiments is disclosed herein.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: July 7, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Oki, Yuji Aoki, Peter Demonte, Yoshinobu Mori
  • Patent number: 10707418
    Abstract: The present disclosure provides an organic light-emitting diode (OLED) device, comprising at least two electron transport layers between a cathode and a light-emitting layer of the device, wherein energy barrier of different electron transport layers successively increase from the cathode to the light-emitting layer. The present disclosure also provides an evaporation equipment and an OLED device manufacturing method, wherein the electron transport layers of the OLED device are formed by an evaporation process using the evaporation equipment. The OLED device of the present disclosure improves the luminescence efficiency of OLED devices, and the evaporation equipment can readily effect a fast switching between different evaporation rates within a same evaporation chamber.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: July 7, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.
    Inventor: Ang Xiao