Abstract: A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

Abstract: An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity produce electron flow from the target in a convoluted path for ionizing a gas such as oxygen flowing through the cavity. The ionized oxygen forms positive and negative oxygen ions which flow from the cavity to an aluminum oxide surface on a substrate. The aluminum oxide surface may contain hydrocarbon molecules which prevent a thin magnetizable layer from adhering uniformly on the aluminum oxide surface. The ionized oxygen molecules and atoms flow through the cavity at a reduced rate and react chemically with the hydrocarbon molecules to form water vapor and carbon monoxide and/or carbon dioxide gases. By removing the hydrocarbons from the aluminum oxide surface, the layer of the magnetizable material is deposited adheringly on the aluminum oxide surface. A neutral gas (e.g.

Abstract: The present invention provides a method and apparatus for delivering one or more process gases and one or more cleaning gases into one or more processing regions. The gas distribution system includes a gas inlet and a gas conduit, each disposed to deliver one or more gases into the chamber via a desired diffusing passage. Also, a gas delivery method and apparatus for splitting a gas feed into multiple feed lines is provided having a gas filter disposed upstream from a splitting coupling disposed in the line.

Abstract: A carbon dioxide dry cleaning system features a pair of liquid carbon dioxide storage tanks in communication with a compressor. A sealed cleaning chamber contains the objects being dry cleaned. By selectively pressurizing the storage tanks with the compressor, liquid carbon dioxide is made to flow to the cleaning chamber through cleaning nozzles so as to provide agitation of the objects being dry cleaned. Liquid carbon dioxide displaced from the cleaning chamber returns to the storage tanks. A still is disposed within one of the storage tanks and receives soiled liquid carbon dioxide as it is returned from the chamber. The pressure in the storage tank causes the soiled liquid carbon dioxide in the still to boil off. The gas is communicated to a third tank.

Abstract: A method for removing from a patterned silicon containing dielectric layer a patterned partially fluorinated photoresist layer employed in patterning the patterned silicon containing dielectric layer. There is first formed over a semiconductor substrate a metal contact layer having a silicon containing dielectric layer formed thereover. There is then formed upon the silicon containing dielectric layer a patterned photoresist layer. There is then formed by use of a reactive ion etch (RIE) plasma etch method employing a fluorine containing etchant a via through the silicon containing dielectric layer to form a patterned silicon containing dielectric layer reaching the metal contact layer.

Abstract: The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.

Abstract: Mixtures comprised of the compounds trans-1,2-dichloroethylene and/or cis-1,2-dichloroethylene and perchloroethylene are disclosed; as is a method for cleaning a solid substrate which comprises treating the substrate with said mixtures. A method for precision cleaning is disclosed, comprising the steps of showering the contaminated surfaces with said mixtures and then rinsing said surfaces with said mixtures that have been cleaned by distillation in-system. A method for dissolving and reconstituting polymers, waxes and oils by use of said mixtures or by use of mixtures consisting essentially of trans-1,2-dichloroethylene or cis-1,2-dichloroethylene is also disclosed; as is a method for delivering polymers, waxes, oils paints, pesticides, insecticides and fungicides to a surface by use of said mixtures or by use of mixtures consisting essentially of trans-1,2-dichloroethylene or cis-1,2-dichloroethylene.

Abstract: Azeotropic or azeotrope-like compositions comprising effective amounts of 1,1,1,2,3,4,4,5,5,5-decafluoropentane and cyclohexane or 1,1,1,2,3,4,4,5,5,5-decafluoropentane, cyclohexane and acetone to form an azeotropic or azeotrope-like composition that are useful as cleaning agents, displacement drying agents, wipe solvents, refrigerants, aerosol propellants, heat transfer media, gaseous dielectrics, fire extinguishing agents, expansion agents for polyolefins and polyurethanes and as power cycle working fluids are described.

Abstract: A method for separating wax from wax containing paper. The method involves immersing the wax containing paper in a heated alkane solvent, preferably n-hexane, to dissolve the wax contained in the paper into the solvent. The dissolved wax and solvent forms a miscella which is later separated from the paper. Any residual solvent absorbed in the paper is removed therefrom. The method also involves retrieving the wax from the miscella.

Abstract: A method for forming within a microelectronics fabrication a via through a microelectronics layer formed of a material susceptible to sequential etching employing a fluorine containing plasma etch method followed by an oxygen containing plasma etch method. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a microelectronics layer formed of a material susceptible to sequential etching employing a fluorine containing plasma etch method followed by an oxygen containing plasma etch method. There is then formed upon the microelectronics layer a patterned photoresist layer. There is then etched through use of the fluorine containing plasma etch method while employing the patterned photoresist layer as a photoresist etch mask layer the microelectronics layer to form a patterned microelectronics layer having a via formed through the patterned microelectronics layer.

Abstract: A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

Abstract: A gas phase plasma cleaning method is utilized for removing contaminants from the surface of exposed metallic, ceramic and plastic parts on integrated circuits (IC's). A two step method uses a defined gas mixture of argon and oxygen, followed by ammonia and hydrogen. For plastic packages, a two step method using a fluorinated plasma, followed by oxygen and argon is utilized. The gases are separately introduced into a plasma chamber. The argon oxygen mixture is used to remove carbonatious material by chemical reaction and by milling. The ammonia hydrogen mixture is introduced to chemically remove and reduce oxides and phosphates from the metallic parts. The fluorinate is used to remove surface silicon and organo-silicon compounds from the plastic parts, while the oxygen argon mixture removes carbonatious and ionic compounds from the plastic package surface. Surface energies are increased to permit improved adhesion of inks.

Abstract: A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

Abstract: The invention relates to a process for cleaning one or more articles which includes the steps of:I) contacting the article(s) with a cleaning agent containinga) from 0.01 to 80 weight percent of water andb) from 99.99 to 20 weight percent of an organic solvent having the features of:i) forming an azeotrope with water, andii) forming a separate phase after azeotropic distillation, the amounts of a) and b) being based on the total weight of a) and b),II) rinsing one or more cleaned articles with a rinsing agent containing from 99.99 to 60 weight percent of water and from 0.

Abstract: A cleaning solution of a semiconductor device is composed of aqueous ammonia (NH.sub.4 OH), methanol (CH.sub.3 OH), hydrofluoric acid (HF) and deionized water (DI--H.sub.2 O), the volume ratio of NH.sub.4 OH to CH.sub.3 OH to DI--H.sub.2 O being 1:1-50:0.1-50, and the volume of HF being 1-10,000 ppm with respect to the mixture solution of NH.sub.4 OH, CH.sub.3 OH and DI--H.sub.2 O. The cleaning solution can be manufactured by simply mixing the respective compositions. The cleaning solution can strip polymers and particles within a short time, without etching or damaging the cleaned metal layers. Since the cleaning process of a semiconductor device is simplified, the processing cost is reduced and the yield and reliability are improved.

Abstract: A method for removing etch residue material in which the removing process is simple, and the metal is prevented from being corroded or damaged. The method for removing etch residue materials and photoresist after carrying out a dry etching includes the steps of preparing a dry chemical by using one or more gas compounds, and removing the etch residue materials by raising the dry chemical above a critical point, wherein the dry chemical comprises carbon dioxide gas and one or more gases selected from a group consisting of DMSO (dimethyl sulfoxide), DMFA (dimethyl formamide), and THF (phentydrone).

Abstract: A process for recovering quantities of carbonyl compound material from spent solvent-in-water emulsions derived from paint overspray treatment and capture systems in which the spent solvent-in-water emulsion is removed from the paint overspray treatment and capture system and fed into a reaction vessel. The reaction vessel employed includes an outer housing defining a reaction chamber and a plurality of mixing blades movably positioned in the reaction chamber. The surface area of the mixing blades are maintained at a temperature sufficient to generate volatilized carbonyl compound. The interior of the reaction vessel is maintained under a vacuum. The spent solvent-in-water emulsion is processed in the reaction vessel for an interval sufficient to generate volatilized carbonyl compound.

Abstract: A method for forming a patterned fluorine containing plasma etched layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a fluorine containing plasma etchable layer. There is then formed upon the fluorine containing plasma etchable layer a patterned photoresist layer. There is then etched through a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable layer to form a patterned fluorine containing plasma etched layer. The patterned fluorine containing plasma etched layer has a fluoropolymer residue layer formed thereupon. The fluorine containing plasma etch method employs a first etchant gas composition comprising a nitrogen trifluoride etchant gas.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A method in a plasma processing chamber, the chamber being employed for processing a substrate, for removing corrosive species from the plasma processing chamber after the substrate is processed. The method includes introducing a flash source gas comprising an oxidizing agent such as oxygen into the plasma processing chamber. The method further includes performing, a flash process, including striking a plasma in the plasma processing chamber with the flash source gas, thereby permitting oxygen species in the plasma to reduce a concentration of the corrosive species in the plasma processing chamber.

Abstract: The present invention discloses a method for in-situ cleaning a reactive ion etching (RIE) chamber after a silicon nitride etching process by maintaining a vacuum and a radial frequency power in the chamber while flowing a chlorine gas into the chamber at a sufficient flow rate. The chlorine gas cleaning step can be integrated into the process recipe for the etching process without significantly affecting the cycle time and the yield of the process.

Abstract: A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.

Abstract: The present invention discloses a method for enhancing profile control in a metal line etching process in which a main etching step and an over etching step are used by incorporating a charge neutralization step for the photoresist layer by an inert gas plasma such that plasma ions aimed at the horizontal surface on the semiconductor substrate is not distorted to bombard the sidewalls on the metal lines. The anisotropic etching of the metal lines is improved to provide metal lines on a device that has enhanced profile control and without the void or cavity defect.

Abstract: Oily substances applied over metallic articles such as aluminum parts have to be removed before brazing them. Their removal is made by heating the parts in an inexplosive gas atmosphere in a heating chamber whereby the oily substances are evaporated into the gas atmosphere which is continuously circulated through a closed circuit consisted of said heating chamber and passage connecting a gas inlet and outlet of the heating chamber. The oily substances carried by the gas are removed from the gas in the passage.

Abstract: A complex building agent, such as EDTA is added in a predetermined concentration to the "SC 1" step of a "PIRANHA-RCA" cleaning sequence for reducing the metal contamination left on the surface of a silicon wafer after completion of this cleaning step.

Abstract: A method of plasma etching photoresist and sidewall polymer with an etch gas mixture comprising CF.sub.4 and H.sub.2 O demonstrating very aggressive ashrate of photoresist but maintains an exceptionally low etch rate for titanium nitride and other metals is provided. The very low TiN etch rate permits the inventive method to effectively breakdown sidewall polymer without removing any significant amount of these metals. The invention is particularly suited for stripping sidewall polymer from etched via holes and from etched metal lines.

Abstract: A gas plasma process for removing photoresist and etch residues and other contaminants involved in etching vias in integrated circuit devices is disclosed. The process involves placing the substrate having etched vias or contact holes in a suitable low bias reactor; applying to the substrate surface a mixture of gases at low bias selected from the group consisting of oxygen, nitrogen, fluorine, hydrofluorocarbon and fluorinated methane and amine gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water; and rinsing the substrate with deionized water. The plasma process should be carried out at temperatures of less than about 100 degrees C to avoid mobile ion contamination problems and oxidation of the etch residues.

Abstract: Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing.

Abstract: The invention relates to a process for cleaning and smoothing the surface of materials with a monocrystalline, polycrystalline or amorphous structure comprising the steps of: (a) polishing the surface to the lowest mechanically attainable roughness; (c) bombarding the surface with ions of a defined charge and kinetic energy to remove any impurities on the surface. To improve efficiency and especially to reduce the cleaning cycles it is proposed to bombard the surface with at least double-charged ions of low kinetic energy, where the potential energy of the ions causes an interaction with the bonded impurities in accordance with their high charge which removes said impurities. Furthermore the kinetic energy imparted to the ions is determined solely so that the ions can approach the atoms of the surface impurities as closely as possible without, however, penetrating the surface.

Abstract: A method of plasma cleaning semiconductor wafers for subsequent soldering the dice cut from the semiconductor wafers to a substrate. The plasma cleaning removes all contaminants such that the semiconductor dice has improved solderability.

Abstract: A device and method for removing contaminants from semiconductor wafers and from the interior of wafer processing chambers in which the temperature inside the chambers is raised to sufficiently high levels for short time periods. In a wafer etching chamber, heat cleaning is performed after wafer removal and lessens the required frequency of other cleaning methods and in doing so reduces the time the chamber is unavailable. In a mask removal chamber, heat cleaning is performed with the wafer in the chamber and while still under vacuum conditions, thereby driving contaminants off of both the wafer and the chamber interior. The wafer cleaning is performed prior to exposure to atmospheric water vapor which can initiate corrosion.

Abstract: In an apparatus for washing automotive, aviation, marine and other general parts, equipment or articles with a liquid cleaning solution, there is provided a process for integrated recycling of the cleaning solution including: containing a charge of the cleaning solution in a holding tank; pumping the solution into a wash basin for washing parts therein; returning the solution to the holding tank; periodically heating the cleaning solution, after becoming contaminated from use, to a predetermined temperature to produce vapors and separate contaminants therefrom; condensing the vapors to yield purified liquid cleaning solution; and returning the purified cleaning solution to the holding tank for subsequent use for washing parts.

Abstract: A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.

Abstract: The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply.

Abstract: A method for forming a via through a silicon oxide layer. There is first provided a substrate. There is then formed over the substrate a patterned silicon nitride layer which defines a contact beneath the patterned silicon nitride layer. There is then formed over the patterned silicon nitride layer a silicon oxide layer. There is then etched the silicon oxide layer through a first reactive ion etch (RIE) method employing a first etchant gas composition comprising a fluorocarbon etchant gas to form: (1) an etched silicon oxide layer which exposes the contact without substantially etching the patterned silicon nitride layer; and (2) a fluorocarbon polymer residue layer formed upon at least one of the etched silicon oxide layer and the patterned silicon nitride layer. Finally, there is stripped from the substrate the fluorocarbon polymer residue layer through a second reactive ion etch (RIE) method employing a second etchant gas composition comprising carbon tetrafluoride and oxygen.

Abstract: The present invention is directed to a process for fabricating a semiconductor integrated circuit device, and specifically, a process for cleaning a silicon substrate before gate silicon dioxide is formed on the silicon substrate. The gate silicon dioxide is used to form transistor gates. The process of the present invention provides a silicon/silicon dioxide interface and the bulk silicon dioxide with advantageous electrical properties. In the present process, the silicon substrate is first subjected to a stream of hydrofluoric acid (HF) vapor. The vapor HF stream is a mixture of anhydrous HF, methanol, and nitrogen. Following this, the substrate is subjected to gaseous chlorine that has been irradiated with broad band UV radiation. After the substrate has been cleaned according to the present process, a layer of silicon dioxide is grown thereon using conventional techniques such as rapid thermal oxidation (RTO).

Abstract: A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.

Abstract: A method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic wafer onto the susceptor before introducing the cleaning agent into the chamber is provided. In particular, the ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of a plasma to spread the plasma away from the susceptor during a cleaning operation, directing more of the plasma towards the walls of the chamber.

Abstract: An apparatus and method for removing undesired material from the surface of a substrate provides a flow of inert gas over the undesired material substrate surface while irradiating the undesired material with energetic photons directed at an angle that is oblique to the substrate. The invention enables removal of undesired material without altering the physical properties of the material underlying or adjacent the removed, undesired material. In certain circumstances, the non-perpendicular incidence permits effective removal where normal incidence caused damage to the substrate or poor removal or both.

Abstract: A stabilized, environmentally-safe solvent mixture and method for using the mixture are provided. The solvent mixture has an ozone depletion factor of less than 0.08. The mixture includes about 80-96.8%, by volume, chlorobromomethane and about 3.2-20.0%, by volume, of a mixture of stabilizers. The mixture of stabilizers includes nitromethane, 1,2-butylene oxide, and 1,3-dioxolane. The mixture of stabilizer inhibits the decomposition of chlorobromomethane. The solvent mixture is particularly effective for cleaning articles having hydrocarbon-soluble contaminants, especially in a vapor degreaser.

Abstract: An etching method includes providing a first surface and a second surface with the second surface lying substantially vertical to the first surface. A material is provided over at least a portion of the first and second surface. The material is anisotropically etched from at least the first surface resulting in a blocking material formed over at least a portion of the material on the second surface. The blocking material is removed and the portion of the material formed over the second surface is isotropically etched. The blocking material may be a polymer material, and the removing step may include oxidizing the polymer material.

Abstract: A method for removing halogenated organic compounds from contaminated particulate material. Formic acid is dry mixed with the contaminated material and an external heating means is used at temperatures of about 250.degree.-450.degree. C. for 10-50 minutes to drive the halogentated organic compounds from the soil.

Abstract: A vacuum processing apparatus includes a plurality of vacuum processing chambers for processing a target object using a process gas, a vacuum convey chamber, connected to the plurality of vacuum processing chambers, for loading/unloading the target object into/from the processing chambers, an opening/closing means opened/closed to cause the plurality of vacuum processing chambers to communicate with the vacuum convey chamber, and a cleaning gas supply means for supplying a cleaning gas containing ClF.sub.3 into at least one of the vacuum convey chamber and the plurality of vacuum processing chambers. The cleaning gas is supplied into the plurality of vacuum processing chambers and the vacuum convey chamber communicating with each other by opening the opening/closing means to clean the plurality of vacuum processing chambers and the vacuum convey chamber.

Abstract: A method and apparatus is provides for decontamination of soil from contaminates such as polychlorinated biphenyls. The method involves (a) admixing a short chain alcohol and a long chain alcohol to provide a solvent composition, (b) admixing the solvent composition with the contaminated soil to extract the contaminant from the soil into the solvent to form contaminated solvent, (c) separating the soil from the contaminated solvent, (d) washing of the decontaminated soil with water to remove residual solvent from the soil, and (e) distillation of the contaminated solvent to separate the reusable short chain alcohol as a light fraction from a heavy fraction containing the long chain alcohol and the contaminant.

Abstract: A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

Abstract: An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.

Abstract: Method and system of rejuvenating pressurized fluid solvents used for cleaning a substrate in a pressurized vessel. A primary flow of the pressurized fluid solvent is continuously cycled from the pressurized vessel through a series of filters to remove insoluble and soluble contaminants, and then returned to the pressurized vessel. A secondary flow of the pressurized fluid solvent, preferably equivalent to less than about 40% of the primary flow, is directed either continuously or intermittently during the cleaning operation to an evaporator to evaporate the pressurized fluid solvent of the secondary flow into a vapor and to separate contaminants therefrom. The vapor from the evaporator is then either liquified by a compressor or condenser to create rejuvenated pressurized fluid solvent and redirected to the pressurized vessel for further use, or vented to atmosphere and replaced by new pressurized fluid solvent from a supply tank.

Abstract: An object to be cleaned is cleaned with an cleaning agent which mixes a base cleaning agent such as silicon-containing cleaning agent or an isoparaffin containing cleaning agent with a surfactant or a hydrophilic solvent to promote the cleaning power. The object is rinsed with the base cleaning agent alone after it goes through the first cleaning step as described above. Then, this is followed by the finishing treatment by the use of hot air or steam drying. The base cleaning agents can be recovered and recycled, improving economy in the case with the use of two or more cleaning agents in combination. The excellent properties of degreasing and dewatering, comparable to those of flon system, can be obtained using a mixture of silicon-containing or isoparaffin-containing cleaning agents with surfactants and hydrophilic solvents and maintaining safety in environment.

Abstract: A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.

Abstract: A system and method for recovering vapors in industrial washing equipment, wherein a solvent is used to wash various articles within a wash area of the equipment. The system includes a hood supported above the wash area, a motor driven fan mounted within the hood for creating an envelope of negative pressure between the wash area and the hood to draw rising vapors into the hood and to direct the vapors at high velocity against a surface to cause separation of pure solvent liquid droplets from the vapor through impaction, and a coalescer for gathering the separated droplets of pure solvent prior to directing the pure solvent to a holding tank for reuse in washing operations.