Gallium Containing Patents (Class 136/262)
  • Patent number: 10283357
    Abstract: Chalcogenidometallates of group IIB, IV and V elements and, particularly, alkali metal-containing chalcogenidometallates of cadmium, lead and bismuth are provided. Also provided are methods of using the chalcogenidometallates as molecular solders to form metal chalcogenide structures, including thin films, molded objects and bonded surfaces composed of metal chalcogenides.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: May 7, 2019
    Assignee: The University of Chicago
    Inventors: Dmitriy S. Dolzhnikov, Hao Zhang, Jaeyoung Jang, Jae Sung Son, Matthew G. Panthani, Dmitri V. Talapin
  • Patent number: 10253415
    Abstract: A process of growth in the thickness of at least one facet of a colloidal inorganic sheet, by sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: April 9, 2019
    Assignee: NEXDOT
    Inventor: Benoit Mahler
  • Patent number: 10249808
    Abstract: This disclosure provides systems, methods, and apparatus related to surface doping of nanostructures. In one aspect a plurality of nanostructures is fabricated with a solution-based process using a solvent. The plurality of nanostructures comprises a semiconductor. Each of the plurality of nanostructures has a surface with capping species attached to the surface. The plurality of nanostructures is mixed in the solvent with a dopant compound that includes doping species. During the mixing the capping species on the surfaces of the plurality of nanostructures are replaced by the doping species. Charge carriers are transferred between the doping species and the plurality of nanostructures.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: April 2, 2019
    Assignee: The Regents of the University of California
    Inventors: Ayaskanta Sahu, Boris Russ, Jeffrey J. Urban, Nelson E. Coates, Rachel A. Segalman, Jason D. Forster, Miao Liu, Fan Yang, Kristin A. Persson, Christopher Dames
  • Patent number: 10249776
    Abstract: Discussed is a method of manufacturing a heterojunction solar cell, including: forming a metal compound on a semiconductor substrate; forming a transparent conductive oxide on the metal compound; forming an electrode forming material on the transparent conductive oxide; and sintering the electrode forming material using light sintering to form an electrode part. The transparent conductive oxide may be sintered by light sintering to form a transparent conductive oxide layer formed of the transparent conductive oxide.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: April 2, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Hwanyeon Kim, Jeongkyu Kim
  • Patent number: 10236461
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: March 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takkyun Ro, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Patent number: 10227261
    Abstract: A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol %, a Ga content expressed in terms of Ga2O3 is 8.5 to 90 mol %, and a Si content expressed in terms of SiO2 is 0 to 45 mol %, and the sintered compact satisfies a condition of A?(B+2C) when the Zn content expressed in terms of ZnO is A (mol %), the Ga content expressed in terms of Ga2O3 is B (mol %), and the Si content expressed in terms of SiO2 is C (mol %), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: March 12, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Nara, Hideto Seki
  • Patent number: 10199523
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: February 5, 2019
    Assignees: NEWSOUTH INNOVATIONS PTY LIMITED, SUNTECH POWER INTERNATIONAL LTD.
    Inventors: Alison Maree Wenham, Ziv Hameiri, Jing Jia Ji, Ly Mai, Zhengrong Shi, Budi Tjahjono, Stuart Ross Wenham
  • Patent number: 10121924
    Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: November 6, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Young Joo Eo, Ara Cho, Jun Sik Cho, Joo Hyung Park, Kyung Hoon Yoon, Se Jin Ahn, Ji Hye Gwak, Jae Ho Yun, Kee Shik Shin, Seoung Kyu Ahn, Jin Su You, Sang Hyun Park
  • Patent number: 10109758
    Abstract: A Monolithic photovoltaic cell is proposed. Said cell comprises at least one junction. Each one of said at least one junction comprises a base formed by a doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction. The semiconductor material of the base and/or of the emitter of at least one of said at least one junction is a semiconductor material formed by a compound of at least one first element and a second element. The band gap and the lattice constant of said semiconductor material of the base and/or of the emitter depend on the concentration of said first element in said compound with respect to said second element.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: October 23, 2018
    Assignee: CESI—Centro Elettrotecnico Sperimentale Italiano Giacinto Motta S.p.A.
    Inventors: Roberta Campesato, Gabriele Gori
  • Patent number: 10069021
    Abstract: In general, the present invention relates to electro-conductive pastes with salt additives with anions consisting of halogen and oxygen, and solar cells with high Ohmic sheet resistance, preferably photovoltaic solar cells. More specifically, the present invention relates to electro-conductive pastes, solar cell precursors, processes for preparation of solar cells, solar cells and solar modules. The present invention relates to an electro-conductive paste at least comprising as paste constituents: a) metallic particles; b) a glass frit; c) an organic vehicle; and d) a salt with an anion comprising an oxygen atom and a halogen atom.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: September 4, 2018
    Assignee: HERAEUS DEUTSCHLAND GMBH & CO. KG
    Inventors: Gerd Schulz, Daniel Winfried Holzmann, Sebastian Unkelbach, Matthias Hörtheis
  • Patent number: 10067107
    Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: September 4, 2018
    Assignee: Honeywell Romania s.r.l.
    Inventors: Cornel P. Cobianu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Alisa Stratulat, Mihai Brezeanu, Octavian Buiu
  • Patent number: 10026856
    Abstract: Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: July 17, 2018
    Assignee: Alliance for Sustainable Energy, LLC
    Inventor: Mark Wanlass
  • Patent number: 9997659
    Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 12, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Richard R. King, Christopher M. Fetzer, Nasser H. Karam
  • Patent number: 9985160
    Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 29, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Richard R. King, Christopher M. Fetzer, Nasser H. Karam
  • Patent number: 9985146
    Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nA and nB satisfy the relation 100/110?nB/nA?110/100. nA is the refractive index of the transparent electrode. nB is the refractive index of the oxide layer.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: May 29, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroki Hiraga, Soichiro Shibasaki, Naoyuki Nakagawa, Mutsuki Yamazaki, Kazushige Yamamoto, Shinya Sakurada, Michihiko Inaba
  • Patent number: 9985152
    Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: May 29, 2018
    Assignee: SOLAR JUNCTION CORPORATION
    Inventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
  • Patent number: 9818898
    Abstract: A method for producing an intermediate product for obtaining a photovoltaic module comprising a plurality of solar cells, said method comprising the following steps: (a) localized deposition on a substrate (4) of a layer of metal (8) so as to cover at least one portion (401) of the substrate, (b) deposition on this localized layer (8) of a layer (41) of conductive material, said layer coating the localized layer (8).
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: November 14, 2017
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Nicolas Karst, Charles Roger
  • Patent number: 9803136
    Abstract: Photovoltaic cells incorporating the compounds A/M/X compounds as hole transport materials are provide. The A/M/X compounds comprise one or more A moieties, one or more M atoms and one or more X atoms. The A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: October 31, 2017
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, In Chung, Byunghong Lee, Robert P. H. Chang
  • Patent number: 9799789
    Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: October 24, 2017
    Assignee: Azur Space Solar Power GmbH
    Inventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
  • Patent number: 9741882
    Abstract: A tandem junction photovoltaic cell has a first p-n junction with a first energy band gap, and a second p-n junction with a second energy band gap less than the first energy band gap. The junctions are separated by a quantum tunneling junction. The first p-n junction captures higher energy photons and allows lower energy photons to pass through and be captured by the second p-n junction. Quantum dots positioned within the first p-n junction promote quantum tunneling of charge carriers to increase the current generated by the first p-n junction and match the current of the second p-n junction for greater efficiency.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: August 22, 2017
    Assignee: IntriEnergy Inc.
    Inventors: Franco Gaspari, Anatoli Chkrebtii
  • Patent number: 9726710
    Abstract: Methods and systems for prediction of fill factor in heterojunction solar cells through lifetime spectroscopy are provided. In accordance with some embodiments, methods for categorizing fill factor in a solar cell are provided, the methods comprising: determining lifetime values of the solar cell at different minority carrier concentrations; determining a lifetime curve shape for the solar cell based on the determined lifetime values; and categorizing the fill factor of the solar cell based on the determined lifetime curve shape using a hardware processor.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: August 8, 2017
    Assignee: Arizona Board of Regents, a body corporate of the State of Arizona, acting for and on behalf of Arizona State University
    Inventors: Kunal Ghosh, Stuart Bowden
  • Patent number: 9722131
    Abstract: A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: August 1, 2017
    Assignee: THE BOEING COMPANY
    Inventor: Christopher M. Fetzer
  • Patent number: 9698046
    Abstract: Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to one embodiment, compositionally-graded buffer layers of III-V alloy are grown on a silicon substrate, and a smart cut technique is used to cut and transfer one or more layers of III-V alloy to a silicon wafer having an insulator layer such as an oxide. One or more transferred layers of III-V alloy can be etched away to expose a desired transferred layer of III-V alloy, upon which a semi-insulating buffer layer and channel layer can be grown to yield IIIVOI platform on which semiconductor devices (e.g., planar and/or 3-dimensional FETs) can be fabricated.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: July 4, 2017
    Assignee: International Business Machines Corporation
    Inventors: Anirban Basu, Bahman Hekmatshoartabari, Ali Khakifirooz, Davood Shahrjerdi
  • Patent number: 9666678
    Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: May 30, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroyuki Miyake, Kei Takahashi, Kouhei Toyotaka, Masashi Tsubuku, Kosei Noda, Hideaki Kuwabara
  • Patent number: 9634162
    Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: April 25, 2017
    Assignee: Korea Institute of Energy Research
    Inventors: Ara Cho, Kyung Hoon Yoon, SeJin Ahn, Jae Ho Yun, Young Joo Eo, Jihye Gwak, Kee Shik Shin, SeoungKyu Ahn, Jun Sik Cho, Jin-Su Yoo, Joo Hyung Park
  • Patent number: 9608146
    Abstract: A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: March 28, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Walter J. Dressick, Jasbinder S. Sanghera, Woohong Kim, Colin C. Baker, Jason D. Myers, Jesse A. Frantz
  • Patent number: 9590131
    Abstract: Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: March 7, 2017
    Assignee: Alliance for Sustainable Energy, LLC
    Inventor: Mark Wanlass
  • Patent number: 9564548
    Abstract: The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: February 7, 2017
    Assignee: The Boeing Company
    Inventors: Dhananjay M. Bhusari, Daniel C. Law
  • Patent number: 9559243
    Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: January 31, 2017
    Assignee: LG CHEM, LTD.
    Inventors: Seokhee Yoon, Seokhyun Yoon, Taehun Yoon
  • Patent number: 9525034
    Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 20, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroyuki Miyake, Kei Takahashi, Kouhei Toyotaka, Masashi Tsubuku, Kosei Noda, Hideaki Kuwabara
  • Patent number: 9520515
    Abstract: This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: December 13, 2016
    Assignee: SEGTON ADT SAS
    Inventors: Zbigniew Kuznicki, Patrick Meyrueis
  • Patent number: 9508890
    Abstract: Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: November 29, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jizhong Li, Anthony J. Lochtefeld, Calvin Sheen, Zhiyuan Cheng
  • Patent number: 9496140
    Abstract: A multi-junction photovoltaic device includes a silicon substrate and a dielectric layer formed on the silicon substrate. A germanium layer is formed on the dielectric layer. The germanium includes a crystalline structure that is substantially similar to the crystalline structure of the silicon substrate. A first photovoltaic sub-cell includes a first plurality of doped semiconductor layers formed on the germanium layer. At least a second photovoltaic sub-cell includes a second plurality of doped semiconductor layers formed on the first photovoltaic sub-cell that is on the germanium layer that is on the dielectric layer.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: November 15, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Supratik Guha, Harold J. Hovel
  • Patent number: 9496452
    Abstract: Methods and systems for repairing oxidation of CIGS surfaces during manufacture of a CIGS solar cell are generally disclosed. Oxidation of an absorber reduces the photoluminescence intensity of the CIGS surface. The absorber is immersed in a reduction tank having a reducing reagent therein. The reducing reagent reverses the oxidation of the CIGS absorber, increasing the interface quality and corresponding photoluminescence intensity. After reversing the oxidation, a buffer layer is deposited on the CIGS absorber to prevent further surface oxidation.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: November 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Shih-Wei Chen
  • Patent number: 9455364
    Abstract: A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel homojunction interposed between the first and second subcells. A first side of the tunnel homojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type and is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel homojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type and also is comprised of a highly doped Group IV semiconductor material. The tunnel homojunction permits photoelectric series current to flow through the subcells.
    Type: Grant
    Filed: January 6, 2010
    Date of Patent: September 27, 2016
    Assignee: EPIR Technologies, Inc.
    Inventors: Sivalingam Sivananthan, Michael Carmody, Robert W. Bower, Shubhrangshu Mallick, James Garland
  • Patent number: 9410259
    Abstract: An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: August 9, 2016
    Assignee: Alliance for Sustainable Energy, LLC
    Inventor: Raghu N. Bhattacharya
  • Patent number: 9368666
    Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: June 14, 2016
    Assignee: International Business Machines Corporation
    Inventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
  • Patent number: 9356177
    Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: May 31, 2016
    Assignee: Dow Global Technologies LLC
    Inventors: Todd R. Bryden, Jeffrey L. Fenton, Jr., Gary E. Mitchell, Kirk R. Thompson, Michael E. Mills, David J. Parrillo
  • Patent number: 9324901
    Abstract: The present invention relates to a precursor solution for forming a semiconductor thin film on the basis of CIS, CIGS or CZTS by printing, comprising metal complexes of at least two different metal cations, wherein the first metal cation is a copper cation and the second is selected from the group consisting of (i) In, (ii) a combination of In and Ga, and (iii) a combination of Zn and Sn, wherein Cu and Sn, if Sn is present, is/are complexed by at least one sulfur or selenium containing anionic complex ligand or polyanion selected from the group consisting of trithiocarbonate, polysulfide or the selenium analogs thereof. If In, In with Ga, or Zn is present, their cations are complexed by an excess of trithiocarbonate and/or triselenocarbonate, and a solvent. A method for preparing such solutions and their use for manufacturing a solar cell or optoelectronic device is provided.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: April 26, 2016
    Assignee: SUNTRICITY CELLS CORPORATION
    Inventors: Sunniva Marita Förster, Manfred Georg Schweizer
  • Patent number: 9263612
    Abstract: This disclosure relates to structures for the conversion of light into energy. More specifically, the disclosure describes devices for conversion of light to electricity using ordered arrays of semiconductor wires coated in a wider band-gap material.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: February 16, 2016
    Assignee: California Institute of Technology
    Inventors: Adele Tamboli, Daniel B. Turner-Evans, Manav Malhotra, Harry A. Atwater
  • Patent number: 9219179
    Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: December 22, 2015
    Assignee: ASCENT SOLAR TECHNOLOGIES, INC.
    Inventors: Lawrence M. Woods, Hobart Stevens, Joseph H. Armstrong
  • Patent number: 9169549
    Abstract: The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: October 27, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Wei-Chien Chen, Lung-Teng Cheng, Ding-Wen Chiou, Tung-Po Hsieh
  • Patent number: 9112075
    Abstract: Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of CuxInyGa1-y(SzSe1-z)2 (wherein 0.85?x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu(2-p)Zn(2-q)Snq(SrSe(1-r))4 (wherein 1.4?p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: August 18, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jong Ku Park, So Hye Cho, Bong Geun Song, Seung Yong Lee, Bo In Park, Hyung Ho Park
  • Patent number: 9105779
    Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: August 11, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Lian Guo, Marinus Johannes Petrus Hopstaken, Maurice Mason, Lubomyr T Romankiw
  • Patent number: 9105775
    Abstract: A multi-junction photovoltaic device includes a germanium layer having pyramidal shapes with (111) facets exposed to form a textured surface. A first p-n junction is formed on or over the textured surface. Another p-n junction is formed over the first p-n junction and following the textured surface.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: August 11, 2015
    Assignee: International Business Machines Corporation
    Inventors: Bahman Hekmatshoartabari, Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahrjerdi
  • Patent number: 9064700
    Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: June 23, 2015
    Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC - AQT SERIES
    Inventors: Kaichiu Wong, Erik Sean Smith, Christ Willie Ford
  • Publication number: 20150144195
    Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes.
    Type: Application
    Filed: March 13, 2014
    Publication date: May 28, 2015
    Inventors: Michael D. Irwin, Robert D. Maher, III, Jerred A. Chute, Vivek V. Dhas
  • Patent number: 9040812
    Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: May 26, 2015
    Assignee: Intellectual Discovery Co., Ltd.
    Inventor: Seung-Yeop Myong
  • Publication number: 20150136230
    Abstract: A solar cell according to an example embodiment includes: a substrate; a first electrode formed on the substrate; a photoactive layer formed on the first electrode and including sodium and potassium; a buffer layer formed on the photoactive layer; and a second electrode formed on the buffer layer. The photoactive layer includes an area where a content of sodium is greater than a content of potassium.
    Type: Application
    Filed: October 14, 2014
    Publication date: May 21, 2015
    Inventors: Young-Su Kim, Jung-Gyu Nam, Ji-Won Lee
  • Publication number: 20150136231
    Abstract: A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-oxygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75° C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide , adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process.
    Type: Application
    Filed: December 9, 2014
    Publication date: May 21, 2015
    Inventors: Robert D. Wieting, Jason Todd Jackson