Cells Patents (Class 136/252)
  • Patent number: 10316196
    Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: June 11, 2019
    Assignee: HEE Solar, L.L.C.
    Inventors: Michael D. Irwin, Jerred A. Chute, Vivek V. Dhas, Kamil Mielczarek
  • Patent number: 10312402
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: April 26, 2014
    Date of Patent: June 4, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi
  • Patent number: 10304976
    Abstract: A photovoltaic (PV) structure for generating electrical power from light, the structure including an enhancing layer for increasing the absorption of the light into the structure, the enhancing layer including: a wrinkled graphene layer configured to trap the light in the PV structure; and aluminum nanoparticles configured to scatter the light into the PV structure.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: May 28, 2019
    Assignee: Swinburne University of Technology
    Inventors: Min Gu, Xi Chen, Baohua Jia
  • Patent number: 10304974
    Abstract: A solar cell is provided comprising a substrate, a first insulating layer on a first surface of the substrate, the first insulating layer having a plurality of first openings that expose portions of the substrate, and a plurality of first electrodes electrically connected to the substrate through the first openings, wherein one or more of the first electrodes are configured so that a width of an upper portion located on the first insulating layer is wider than a width of a lower portion located in a corresponding first opening.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: May 28, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Yoonsil Jin, Goohwan Shim, Youngho Choe, Changseo Park
  • Patent number: 10294162
    Abstract: A method for producing a carbon particle by a detonation method includes two steps. The first step is a step of disposing an explosive substance in the periphery of a raw material substance. The explosive substance has a detonation velocity of 6,300 m/s or more. The raw material substance contains an aromatic compound having not more than 2 nitro groups. The second step is a step of allowing the explosive substance to detonate.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: May 21, 2019
    Assignees: KOBE STEEL, LTD., NATIONAL INSTITUTE OF ADVANCED SCIENCE AND TECHNOLOGY
    Inventors: Ryutaro Wada, Masaya Ueda, Yozo Kakudate, Shuzo Fujiwara, Shu Usuba
  • Patent number: 10290741
    Abstract: The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: May 14, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Changcheng Ju, Hu Meng, Yanzhao Li
  • Patent number: 10287676
    Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: May 14, 2019
    Assignee: AGC Inc.
    Inventors: Hiroaki Iwaoka, Atsushi Seki, Kousuke Chonan, Reo Usui, Toshio Suzuki, Tomomi Abe
  • Patent number: 10283668
    Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: May 7, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTER
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
  • Patent number: 10283667
    Abstract: The present disclosure relates to an electromagnetic energy detector. The detector can include a substrate having a first refractive index; a metal layer; an absorber layer having a second refractive index and disposed between the substrate and the metal layer; a coupling structure to convert incident radiation to a surface plasma wave; additional conducting layers to provide for electrical contact to the electromagnetic energy detector, each conducting layer characterized by a conductivity and a refractive index; and a surface plasma wave (“SPW”) mode-confining layer having a third refractive index that is higher than the second refractive index disposed between the substrate and the metal layer.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: May 7, 2019
    Assignee: STC.UNM
    Inventors: Steven R. J. Brueck, Sanjay Krishna, Seung-Chang Lee
  • Patent number: 10263278
    Abstract: Provided is a battery including a positive electrode, a negative electrode, a separator, and an electrolyte that contains particles, a resin, and an electrolytic solution. The shape of the particles includes a plane, a plane rate of the particles is greater than 40% and equal to or less than 100%, and a refractive index of the particles is equal to or greater than 1.3 and less than 2.4.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: April 16, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kazuhito Hatta, Keiichi Kagami, Nobuaki Shimosaka, Keizo Koga
  • Patent number: 10236397
    Abstract: A method for producing a solar cell having good photoelectric conversion characteristics with high productivity, including the steps of: forming a first electrode on a first main surface of a semiconductor substrate; applying an insulator film precursor to cover at least part of the first electrode; temporarily curing the insulator film precursor; applying a conductive paste to at least the insulator film precursor; curing the conductive paste to form a second electrode; and completely curing the insulator film precursor to form an insulator film, the method in which the step of applying the conductive paste so as to be electrically insulated from the first electrode is performed after the step of temporarily curing the insulator film precursor and at least part of the steps of curing the conductive paste to form the second electrode and completely curing the insulator film precursor to form the insulator film are concurrently performed.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: March 19, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroshi Hashigami, Toyohiro Ueguri, Takenori Watabe, Hiroyuki Ohtsuka
  • Patent number: 10209600
    Abstract: An electrically conducting support for an electrochromic device and its manufacture; the electrically conducting support including, in this order: a substrate, an optional underlayer, a first inorganic layer on the optional underlayer or on the substrate, partially or completely structured in thickness with traversing holes or cavities, an electrode, made of metal grid with strands which exhibit, along their length, a rough central region between less rough lateral regions which are flush with the top surface, an electrically conducting coating made of inorganic material.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: February 19, 2019
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Denis Guimard, Samuel Dubrenat, Joao Abreu
  • Patent number: 10205043
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: February 12, 2019
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Hong-Jhang Syu
  • Patent number: 10186621
    Abstract: The present disclosure provides a solar cell device comprising; a support substrate; a rear electrode layer on the substrate; a light absorption layer on the rear electrode layer; a front electrode layer on the light absorption layer; and wherein a first through-hole is defined in the rear electrode layer; wherein at least one protrusion is formed on an exposed top face of the substrate via the first through-hole.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: January 22, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myoung Seok Sung
  • Patent number: 10173397
    Abstract: There is provided a thermoplastic resin film which is high in tear resistance. The thermoplastic resin film according to the present invention is provided with a plurality of first thermoplastic resin layers each containing a thermoplastic resin and a plurality of second thermoplastic resin layers each containing a thermoplastic resin, and has a multilayer structure in which the first and second thermoplastic resin layers are laminated in the thickness direction, the number of laminations in total of the first and second thermoplastic resin layers in the thickness direction is greater than or equal to 5, the ratio of the total thickness of the first thermoplastic resin layers to the total thickness of the second thermoplastic resin layers is greater than 1, the tensile modulus of elasticity of the respective first thermoplastic resin layers is less than or equal to 30 MPa, and the tensile modulus of elasticity of the respective first thermoplastic resin layers is greater than or equal to 280 MPa.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: January 8, 2019
    Assignee: SEKISUI CHEMICAL CO., LTD.
    Inventors: Zenei Hayashi, Yoshihiro Inui, Takehiro Nakamura
  • Patent number: 10170716
    Abstract: Disclosed herein is a method of preparing organic films, including: (1) forming a first organic film including nanorods on a substrate using a first organic solution; (2) introducing a second organic solution at least into spaces between the nanorods of the first organic film; and (3) crystallizing the introduced second organic solution to form a second organic film. The method can provide an organic film having excellent properties in terms of crystallinity and topography.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: January 1, 2019
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Young Jo, Hyeon Jun Lee
  • Patent number: 10147604
    Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: December 4, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Patent number: 10132998
    Abstract: This method for manufacturing a germanium slow light waveguide includes: producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; then carrying out an operation of vapor phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; and before implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: November 20, 2018
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Karim Hassan, Daivid Fowler, Christophe Kopp, Bertrand Szelag
  • Patent number: 10134931
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: November 20, 2018
    Assignee: Bengbu Design & Research Institute for Glass Industry
    Inventors: Jörg Palm, Stephan Pohlner, Thomas Happ, Thomas Dalibor, Roland Dietmüller
  • Patent number: 10128630
    Abstract: A solar-pumped laser device includes: a light-guiding plate configured such that a fluorescence substance absorbing solar light and emitting fluorescence including a predetermined wavelength is dispersed in the light-guiding plate so as to bring the fluorescence to exit a predetermined surface; and an optical fiber disposed close to the predetermined surface, the optical fiber including: a core part in which a medium excitable by the fluorescence so as to emit a laser is dispersed; and a clad part that is formed by a material through which the fluorescence passes, is disposed around the core part, and has a smaller refractive index than a refractive index of the core part, wherein a light emitted by the medium is totally reflected by one end surface of the optical fiber, and is brought to pass through the other end surface of the optical fiber.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: November 13, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Taizo Masuda
  • Patent number: 10121971
    Abstract: The present disclosure relates to a cellulose-polymer composite solar cell that is substantially biodegradable and fabricated using environmentally friendly materials and methods. The polymer solar cell comprises an electrically conductive cellulose-polymer composite and an electrically semiconductive cellulose-polymer composite.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: November 6, 2018
    Assignee: ChemGreen Innovation Inc.
    Inventors: Khashayar Ghandi, Yang Tan, Fraser Burns, Sean Robertson, Zahid Shabbir Mahimwalla
  • Patent number: 10121601
    Abstract: A method of generating electricity utilizing silicon oxide is provided. The method includes irradiating a light to a photocell comprising a photovoltaic material which consists essentially of silicon oxide in a manner that causes the silicon oxide to generate the electricity in response to the irradiation of light, and correcting the electricity from the photovoltaic material.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: November 6, 2018
    Assignee: INTERNATIONAL FRONTIER TECHNOLOGY LABORATORY, INC.
    Inventors: Nobuaki Komatsu, Tomoko Ito, Hiroki Nagai
  • Patent number: 10115847
    Abstract: A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on the cupric oxide layer, which serves as a seed layer, to yield a cupric oxide film, thereby obtaining a cupric oxide semiconductor. Also disclosed are a cupric oxide semiconductor thus prepared and a photovoltaic device including it.
    Type: Grant
    Filed: April 2, 2015
    Date of Patent: October 30, 2018
    Assignee: Trustees of Tufts College
    Inventors: Changqiong Zhu, Matthew Panzer
  • Patent number: 10115918
    Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: October 30, 2018
    Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
    Inventors: Yabing Qi, Min-Cherl Jung, Sonia Ruiz Raga
  • Patent number: 10115850
    Abstract: A roof integrated solar panel system includes a plurality of solar panel modules, each modules having a frame, a photovoltaic panel mounted to the frame, and a micro-inverter mounted to the frame to one side of the photovoltaic panel and accessible from the top of the frame. The solar panel modules are installable on a roof in aligned or staggered courses to form the solar panel system, and with the installed courses of modules together forming a water barrier protecting the roof.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: October 30, 2018
    Assignee: Building Materials Investment Corporation
    Inventors: Tommy F. Rodrigues, Sudhir Railkar, Daniel E. Boss, David J. Gennrich, Cory Boudreau, Daniel R. Nett, Kent J. Kallsen
  • Patent number: 10096739
    Abstract: A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: October 9, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Ara Cho, Kyung Hoon Yoon, Se Jin Ahn, Jae Ho Yun, Jihye Gwak, Kee Shik Shin, Young Joo Eo, Seoung Kyu Ahn, Jun Sik Cho, Jin Su You, Joo Hyung Park, Ki Hwan Kim
  • Patent number: 10084145
    Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: September 25, 2018
    Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
    Inventors: Yabing Qi, Min-Cherl Jung, Sonia Ruiz Raga
  • Patent number: 10072337
    Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: September 11, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Harm C. M. Knoops, Koen de Peuter, Wilhelmus M. M. Kessels
  • Patent number: 10071907
    Abstract: A photovoltaic cell comprises a first electrode that includes a first transparent conductive substrate, a first layer having a plurality of first semiconductor nanofibers, and a second layer having a plurality of second semiconductor super-fine fibers, the first semiconductor nanofibers having an average diameter smaller than an average diameter of the second semiconductor super-fine fibers, a light absorbing material adsorbed to at least some of the first semiconductor nanofibers and second semiconductor super-fine fibers, a second electrode includes a second transparent conductive substrate, and electrolytes dispersed in the first and second layers.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: September 11, 2018
    Assignee: THE HONG KONG POLYTECHNIC UNIVERSITY
    Inventors: Wallace Woon-fong Leung, Lijun Yang
  • Patent number: 10069095
    Abstract: Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: September 4, 2018
    Assignees: University of Southern California, The Regents of the University of Michigan
    Inventors: Stephen R. Forrest, Xin Xiao, Jeramy D. Zimmerman, Kevin Bergemann, Anurag Panda, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Patent number: 10056554
    Abstract: The invention provides novel materials, methods and designs to enable improved power conversion efficiencies of organic photovoltaics (OPVs). In particular, the invention provides novel materials and interlayers for polymer-based solar cells. Novel functional fullerene-based interlayers are disclosed that enable high efficiency devices in conjunction with numerous active layer and electrode materials.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: August 21, 2018
    Assignee: University of Massachusetts
    Inventors: Zachariah Page, Yao Liu, Thomas P. Russell, Todd Emrick
  • Patent number: 10056529
    Abstract: A photo-conversion complex including at least one photo-conversion particle including a core nanocrystal, a shell nanocrystal surrounding the core nanocrystal, and a ligand bonded to the shell nanocrystal; and a protective film surrounding the photo-conversion particle.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: August 21, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Jinwoo Sung, Seongman Jeon, Dongseon Jang
  • Patent number: 10020204
    Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. In some embodiments, localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film, among other techniques. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: July 10, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Aaron Muir Hunter, Swaminathan T. Srinivasan
  • Patent number: 9991402
    Abstract: Disclosed are a solar apparatus and a method of fabricating a solar apparatus. The solar apparatus according to the embodiment includes: a substrate; a back electrode layer on the substrate; a plurality of sub-electrodes making direct contact with the back electrode layer and extending in a first direction; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: June 5, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Ho Gun Cho
  • Patent number: 9988707
    Abstract: A method of manufacturing indium tin oxide includes sputtering indium and tin from a target onto a substrate, the sputtering including moving the target along a path over the substrate. The indium tin oxide may have a sheet resistance less than 0.5 ?/?. An indium film includes: a first moving target sputtered indium tin oxide layer; a second moving target sputtered indium tin oxide layer on the first moving target sputtered indium tin oxide layer; and a third moving target sputtered indium tin oxide layer on the second moving target sputtered indium tin oxide layer. A transparency includes the indium tin oxide, and a flying vehicle includes the transparency.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: June 5, 2018
    Assignee: PPG INDUSTRIES OHIO, INC.
    Inventors: Krishna K. Uprety, Khushroo H. Lakdawala, Russell Shellenberger, Mahmood Ahmad Ali
  • Patent number: 9991400
    Abstract: Provided is a collector sheet for a solar cell, wherein the collector sheet for solar cell can prevent short circuiting between a non-photoreception surface side element and a wiring section, as well as cushioning shocks. This collector sheet (2) for a solar cell has a circuit (22) on the surface of a resin substrate (21). A sealing material layer (23) is stacked on the circuit (22), and in the sealing material layer (23) on the wiring section (221) is formed a conductive recessed part (24) through which the wiring section (221) is exposed, in order to provide conductivity between an electrode (4) on the non-photoreception surface side of the solar cell element (1), and the wiring section (221) corresponding thereto, with the sealing material layer (23) therebetween.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: June 5, 2018
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Takayuki Komai, Satoshi Emoto
  • Patent number: 9982850
    Abstract: Embodiments of the invention include a semiconductor light emitting device for emitting a first light at a first wavelength and a wavelength conversion medium arranged to convert at least part of the first light into a second light at a second wavelength. The wavelength conversion medium is disposed between a periodic antenna array and the semiconductor light emitting device. The periodic antenna array includes a plurality of antennas. The periodic antenna array supports surface lattice resonances arising from diffractive coupling of localized surface plasmon resonances in at least one of the antennas.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: May 29, 2018
    Assignee: Lumileds LLC
    Inventors: Said Rahimzadeh Kalaleh Rodriguez, Jaime Gomez Rivas, Abraham Rudolf Balkenende, Marcus Antonius Verschuuren, Gabriel Sebastian Lozano Barbero, Shunsuke Murai
  • Patent number: 9972755
    Abstract: Illumination structure (100) and illumination devices comprising such illumination structure are described.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: May 15, 2018
    Assignee: PHILIPS LIGHTING HOLDING B.V.
    Inventors: Dirk Kornelis Gerhardus De Boer, Marcus Antonius Verschuuren, Jamie Gómez Rivas, Rahimzadeh Kalaleh Rodriguez
  • Patent number: 9972513
    Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: May 15, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Yuki Saito, Konosuke Hayashi, Takashi Ootagaki, Yuji Nagashima
  • Patent number: 9959982
    Abstract: To provide a photoelectric conversion element being excellent in photoelectric conversion efficiency and stability of photoelectric conversion function, a method for producing the photoelectric conversion element, and a solar cell using the photoelectric conversion element. A photoelectric conversion element having a substrate, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing pigment, a hole transport layer having a conductive polymer, and a second electrode, wherein the hole transport layer is formed by bringing the photoelectric conversion layer into contact with a solution containing a conductive polymer precursor and an oxidizer at a ratio of 0.1<[Ox]/[M] (wherein [Ox] is the molar concentration of the oxidizer; and [M] is the molar concentration of the conductive polymer precursor), and irradiating the photoelectric conversion layer with light.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: May 1, 2018
    Assignee: KONICA MINOLTA, INC.
    Inventors: Takayuki Ishikawa, Kazuya Isobe
  • Patent number: 9960288
    Abstract: Some implementations provide a device (e.g., solar panel) that includes an active layer and a solar absorbance layer. The active layer includes a first N-type layer and a first P-type layer. The solar absorbance layer is coupled to a first surface of the active layer. The solar absorbance layer includes a polymer composite. In some implementations, the polymer composite includes one of at least metal salts and/or carbon nanotubes. In some implementations, the active layer is configured to provide the photovoltaic effect. In some implementations, the active layer further includes a second N-type layer and a second P-type layer. In some implementations, the active layer is configured to provide the thermoelectric effect. In some implementations, the device further includes a cooling layer coupled to a second surface of the active layer. In some implementations, the cooling layer includes one of at least zinc oxides, indium oxides, and/or carbon nanotubes.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: May 1, 2018
    Assignee: The United State of America as represented by the Administrator of NASA
    Inventors: Jin Ho Kang, Chase Taylor, Cheol Park, Godfrey Sauti, Luke Gibbons, Iseley Marshall, Sharon E. Lowther, Peter T. Lillehei, Joycelyn S. Harrison, Robert G. Bryant
  • Patent number: 9947482
    Abstract: A photoelectric conversion element has a conductive support, a photoreceptor layer containing an electrolyte, a charge carrier layer containing an electrolyte and a counter electrode, and the photoreceptor layer has semiconductor particles on which a metal complex dye represented by Formula (I) is carried. M1(LA)(LD)(Z1).CI??Formula (I) M1 represents a metal atom; Z1 represents a monodentate ligand; LA represents a tridentate ligand represented by Formula (AL-1); LD represents a bidentate ligand represented by Formula (DL-1); and CI represents a counterion necessary for neutralizing the charge.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: April 17, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Kohsuke Watanabe, Hirotaka Sato, Yukio Tani, Ryo Fujiwara, Kazuhiro Tsuna, Katsumi Kobayashi
  • Patent number: 9934964
    Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: April 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Christopher Leitz, Christopher J. Vineis, Richard Westhoff, Vicky Yang, Matthew T. Currie
  • Patent number: 9929295
    Abstract: In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: March 27, 2018
    Assignee: SIVA POWER, INC.
    Inventor: Markus Eberhard Beck
  • Patent number: 9899116
    Abstract: Provided are a silver nanowire conductive film coated with an oxidation protection layer and a method for fabricating the same. A silver nanowire conductive film coated with an oxidation protection layer includes: a substrate; silver nanowires disposed on the substrate; and an oxidation protection layer coated on the silver nanowires, wherein the oxidation protection layer comprises an oxide.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: February 20, 2018
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Hyun Suk Jung, Dong Jun Lee, Yun Jin An, Gi Ra Yi
  • Patent number: 9882070
    Abstract: A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 30, 2018
    Assignee: AALTO UNIVERSITY FOUNDATION
    Inventors: Mikko Juntunen, Hele Savin, Päivikki Repo, Ville Vähänissi, Antti Haarahiltunen
  • Patent number: 9882388
    Abstract: A photovoltaic device is provided. The photovoltaic device includes a photovoltaic cell array absorbing solar voltaic energy to convert the solar voltaic energy to electrical energy, and a sensing unit sensing at least any one of power generation information for representing a state of the photovoltaic device and environmental information for representing environmental information around the photovoltaic device, and measuring a time when the at least one of the power generation information and the environmental information is sensed.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: January 30, 2018
    Assignee: LSIS CO., LTD.
    Inventor: Choong Kun Cho
  • Patent number: 9871154
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: January 16, 2018
    Assignee: First Solar, Inc.
    Inventors: Anil Raj Duggal, Joseph John Shiang, William Hullinger Huber, Adam Fraser Halverson
  • Patent number: 9871146
    Abstract: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: January 16, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Seunghwan Shim, Kisu Kim, Eunae Yoon, Yuju Hwang, Younghyun Lee, Sangwook Park
  • Patent number: 9865823
    Abstract: The present invention relates to an electrode layer comprising a porous film made of oxide semiconductor fine particles sensitized with a quinolinium dye having a fluorinated counteranion. Moreover the present invention relates to a photoelectric conversion device comprising said electrode layer, a dye sensitized solar cell comprising said photoelectric conversion device and to novel quinolinium dyes having a fluorinated counteranion.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: January 9, 2018
    Assignee: BASF SE
    Inventors: Robert Send, Ingmar Bruder, Peter Erk, Ruediger Sens, Hiroshi Yamamoto, Hitoshi Yamato, Shinji Nakamichi, Ryuichi Takahashi