Abstract: Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.

Abstract: The present invention provides a thermoelectric conversion material having a considerably increased Seebeck coefficient, and a thermoelectric conversion device, a thermo-electrochemical cell and a thermoelectric sensor which include the material. The thermoelectric conversion material of the present invention includes a redox pair and a capture compound which captures only one of the redox pair selectively at low temperature and releases at high temperature.

Abstract: Dye-sensitized ion-pumping membranes and methods of preparing said membranes are described herein. A regenerative and reversible photoactive dye is covalently-bonded to membrane or separator for ion-pumping. The photoactive dye-functionalized membranes can be arranged with other ion-exchange membranes, which serve as selective contacts to afford photovoltaic action and therefore form a power-producing membrane that pumps ions for use in driving an ion-exchange or ion-transport process, such as desalination and electrodialysis.

Abstract: Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.

Abstract: A bifacial light-harvesting dye-sensitized solar cell is provided and has: a first transparent substrate, a second transparent substrate, a working electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a counter electrode, a light-transmitting catalyst layer, and a liquid electrolyte. A photoelectric conversion efficiency of the dye-sensitized solar cell is improved by using a specific working electrode structure.

Abstract: The present application discloses compounds and compositions, useful in the manufacture of dye-sensitized solar cells and other similar technology.

Abstract: A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs.

Abstract: The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X]3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

Abstract: A voltage converting device includes: a DC/DC converter configured to step down a voltage of a power supply and output the stepped-down voltage to a low-voltage power supply having a voltage lower than a voltage of the power supply; a control device configured to control the DC/DC converter; and a determining unit configured to determine whether a voltage of the power supply input to the DC/DC converter is within a predetermined voltage range, wherein the control device switches, on the basis of a determination result of the determining unit, between a first control in which the DC/DC converter is caused to perform a step-down operation and electric power is supplied to a load connected to the low-voltage power supply and a second control in which a step-down operation of the DC/DC converter stops and electric power is supplied from the low-voltage power supply to the load.

Abstract: A photovoltaic module includes at least one solar cell, an encapsulant encapsulating the at least one solar cell, a frontsheet juxtaposed with the encapsulant, and backsheet juxtaposed with the encapsulant. The frontsheet includes a glass layer, a polymer layer attached to the glass layer, and an adhesive layer attaching the polymer layer to the glass layer. The backsheet includes a single-layer, moisture-resistant, fire-retardant membrane.

Abstract: A semiconductor device having a highly doped quantum structure emitter is disclosed. In an embodiment, the semiconductor device includes a quantum structure emitter. The quantum structure emitter includes of a first layer made of an undoped semiconductor material with a large band gap, a second, middle, highly doped layer made of a semiconductor material with a low band gap and a third, undoped layer made of a semiconductor material with a large band gap.

Abstract: Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

Abstract: A microelectronic device includes: a photovoltaic module configured to convert a light energy into an electric energy; a converter configured to convert a voltage output from the photovoltaic module into a predetermined voltage; a capacitor configured to store an electric energy transferred from the converter; and a controller configured to predict an available current of a next time slot based on the electric energy stored in the capacitor, and determine a consumed current of a load system of the next time slot based on the predicted available current.

Abstract: Wires (22) electrically connecting solar cells (10) include first wires (22a) and second wires (22b). The first wires (22a) are connected to the first-conductivity-type electrodes (12) of a first one of the solar cells (10) and the second-conductivity-type electrodes (13) of a second one of the solar cells 10 that is adjacent to the first one of the solar cells (10). The second wires (22b) are connected to the second-conductivity-type electrodes (13) of the first one of the solar cells (10) and the first-conductivity-type electrodes (12) of the second one of the solar cells (10). The second wires (22b) are electrically separated by holes (21a) extending through both the second wires (22b) and an insulating base member (21).

Abstract: One embodiment can provide a photovoltaic roof module. The photovoltaic roof module can include a plurality of photovoltaic roof tiles positioned side by side. A respective solar roof tile comprises a plurality of photovoltaic structures positioned between a front cover and a back cover, and the photovoltaic structures are electrically coupled to each other in series. The photovoltaic roof tiles are electrically coupled to each other in parallel.

Abstract: A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.

Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type.

Abstract: The invention relates to a process for forming a conductive track or coating on a substrate, comprising: applying a conductive paste to the substrate, the conductive paste comprising a solids portion dispersed in an organic medium, the solids portion comprising particles of electrically conductive material and an inorganic particle mixture comprising substantially crystalline particles of two or more different metal compounds, wherein the inorganic particle mixture includes substantially crystalline particles of a tellurium compound and is substantially lead free; and firing the applied conductive paste on the surface of the substrate with a firing profile in which the temperature of the surface of the applied conductive paste exceeds 500° C. for a period of two minutes or less. The invention further relates to a substrate having a conductive track or coating formed thereon.

Abstract: A stacked multi-junction solar cell with a first subcell having a top and a bottom, and with a second subcell. The first subcell is implemented as the topmost subcell so that incident light first strikes the top of the first subcell and after that strikes the second subcell through the bottom. A first tunnel diode is arranged between the bottom of the first subcell and the second subcell. A window layer is arranged on the top of the first subcell, and the band gap of the window layer is larger than the band gap of the first subcell. A cover layer is arranged below metal fingers and above the window layer, and an additional layer is arranged below the cover layer and above the window layer. A thickness of the additional layer is less than the thickness of the window layer.

Abstract: A method of expanding a sheet includes the steps of gripping the sheet with a first gripping unit and a second griping unit and gripping the sheet with a third gripping unit and a fourth gripping unit, and expanding the sheet by moving the first gripping unit and the second griping unit away from each other in first directions relatively and moving the third gripping unit and the fourth gripping unit away from each other in second directions relatively. In the step of expanding the sheet, the states of the sheet that is under tension are detected, and movement of the first gripping unit, the second griping unit, the third gripping unit, and the fourth gripping unit is controlled based on the detected states of the sheet.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: A method of producing a graphene film (22) includes forming a catalyst film (20) on a support (18); forming a graphene film (22) on the catalyst film (20); and electrolytically removing the catalyst film (20) from the support (18). The method may include transferring the graphene film (22) to a substrate (29). A supported graphene film includes a conductive support (18); a catalyst film (20) formed on the conductive support (18) having a thickness in a range of 1 nm to 10 ?m, and a graphene film (22) formed on the catalyst film (20).

Abstract: A backsheet for a photovoltaic module includes a support, an adhesive layer provided on one side of the support, and an outer layer provided on the other side of the support, characterized in that at least one of the adhesive layer and the outer layer is coated from an aqueous composition, and the aqueous composition includes a water soluble or dispersible binder and a water dispersible core/shell polyisocyanate.

Abstract: A photoelectric conversion element is provided. The photoelectric conversion element comprises a substrate, a first electrode, an electron transport layer, a hole transport layer, and a second electrode. The electron transport layer comprises a photosensitizing compound. The hole transport layer comprises a basic compound A and an ionic compound B. The basic compound A is represented by the following formula (1): where each of R1 and R2 independently represents an alkyl group or an aromatic hydrocarbon group, or R1 and R2 share bond connectivity to form a nitrogen-containing heterocyclic ring; and the ionic compound B is represented by the following formula (2): where X+ represents a counter cation.

Abstract: An OLED is disclosed that includes an enhancement layer having optically active metamaterials, or hyperbolic metamaterials, which transfer radiative energy from the organic emissive material to a non-radiative mode, wherein the enhancement layer is disposed over the organic emissive layer opposite from the first electrode, and is positioned no more than a threshold distance away from the organic emissive layer, wherein the organic emissive material has a total non-radiative decay rate constant and a total radiative decay rate constant due to the presence of the enhancement layer, and the threshold distance is where the total non-radiative decay rate constant is equal to the total radiative decay rate constant; and an outcoupling layer disposed over the enhancement layer, wherein the outcoupling layer scatters radiative energy from the enhancement layer to free space.

Abstract: The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed halide perovskite of the formula (I) [A][B][X]3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.

Abstract: A gas barrier film comprising a substrate layer containing a filler, an anchor coat layer provided on the substrate layer, and a gas barrier layer provided on the anchor coat layer. In the gas barrier film, an average particle diameter D of the filler is 0.02 to 3.00 ?m, a thickness of the substrate layer is equal to or larger than the average particle diameter of the filler, and a total thickness T of one or more layers disposed between the substrate layer and the gas barrier layer is 0.02 to 0.40 ?m.

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.

Abstract: An aspect of the present disclosure is a method that includes applying a solution that includes a first solvent, a halogen-containing precursor, and a metal halide to a substrate to form a coating of the solution on the substrate, contacting the coating with a second solvent to form a first plurality of organo-metal halide perovskite crystals on the substrate, and thermally treating the first plurality of organo-metal halide perovskite crystals, such that at least a portion of the first plurality of organo-metal halide perovskite crystals is converted to a second plurality of organo-metal halide perovskite crystals on the substrate. The halogen-containing precursor and the metal halide are present in the solution at a molar ratio of the halogen-containing precursor to the metal halide between about 1.01:1.0 and about 2.0:1.0, and a property of the second plurality of organo-metal halide perovskite crystals is improved relative to a property of the first plurality of organo-metal halide perovskite crystals.

Abstract: A photoelectric conversion device including a perovskite compound, a method of manufacturing the same and an imaging device including the same.

Abstract: Provided is a battery armoring stainless steel foil which, without the need for a special treatment such as corona discharge, has excellent adhesiveness to resin after being thermally shocked and after being immersed in an electrolyte solution. A battery armoring stainless steel foil (1) includes an oxide film (1a), having a thickness of not less than 2 nm, which contains (i) one or more metallic elements, existing as a hydroxide, in an amount of not less than 35 mol percent and (ii) SiO2 in an amount of not more than 40 mol percent, the battery armoring stainless steel foil (1) having an arithmetic mean roughness Ra of less than 0.1 ?m but not less than 0.02 ?m in a direction orthogonal to a direction in which the battery armoring stainless steel foil (1) has been rolled.

Abstract: The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Abstract: The flexible solar panel includes a polymer matrix and a plant extract incorporated in the polymer matrix. The plant extract can be an extract of chard (B. vulgaris subsp. cicla) including an organic dye. The plant extract can include chloroplasts. The polymer matrix may be formed from either poly(vinyl alcohol) or polystyrene. The flexible solar panel can be green.

Abstract: An electronic device comprises a first encapsulating film in direct contact with a light-receiving and transmitting film and a second encapsulating film in direct contact with a back sheet. The first encapsulating film has a zero shear viscosity greater than that of the second encapsulating film. The back sheet of the electronic device contains fewer bumps than the back sheet of a comparable electronic device having a first encapsulating film with a zero shear viscosity less than or equal to that of the second encapsulating film.

Abstract: A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.

Abstract: In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P.

Abstract: Provided are microelectronics substrates and methods of manufacturing and using the microelectronics substrate. An example of a microelectronics substrate includes a carrier, a silicate bonding layer, and a flexible substrate, wherein the flexible substrate is bonded to the silicate bonding layer. The microelectronics substrate comprises a peel strength between the flexible substrate and silicate bonding layer; wherein the peel strength between the flexible substrate and the silicate bonding layer is below 1 kgf/m.

Abstract: A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.

Abstract: A concentrator photovoltaic module according to one embodiment of the present disclosure includes: a case; a substrate disposed on a bottom surface of the case and having a plurality of stacked wiring layers; and concentrator photovoltaic elements disposed on the substrate and connected to the wiring layers. The concentrator photovoltaic elements connected to different wiring layers are connected to each other in parallel. According to the concentrator photovoltaic module according to the one embodiment of the present disclosure, output voltage can be decreased.

Abstract: The present invention is related to using a plasmonic energy conversion device comprised of a non-permeable substrate and of a plurality of nanorods, either free standing or embedded in aluminum matrix, that utilizes plasmons to generate vapor from a fluid as a result of being exposed to radiation. Methods of manufacturing the plasmonic energy converter device are described.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: A multilayer film structure including a top encapsulation layer A, a tie Layer B between top Layer A and bottom Layer C and a bottom layer C, the multilayer film structure characterized in that tie Layer B includes a crystalline block composite resin or a block composite resin and bottom Layer C includes a polyolefin having at least one melting point greater than 125 C.

Abstract: A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent).

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract: Organic semiconductor formulations are disclosed. One of the formulations comprises a single or mixture of non-halogenated, hydrocarbon solvent, a conjugated polymer donor and a fullerene or small molecular acceptor, wherein the conjugated polymer contains branched alkyl chains with 21 or more carbon atoms. In addition, organic semiconductor film forming methods and applications using of the above-mentioned formulations are disclosed.