Abstract: A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
Type:
Grant
Filed:
November 1, 1984
Date of Patent:
February 25, 1986
Assignee:
NCR Corporation
Inventors:
Steven H. Rogers, Randall S. Mundt, Denise A. Kaya
© 2024 Justia
