Abstract: A silicon carbide layer(s) is provided on a silicon substrate. If necessary, a desired pattern of the silicon carbide layer(s) is allowed to remain, while the other portion(s) is embedded with SiO.sub.2. If necessary, the silicon carbide layer(s) may be constituted of a barrier layer and a device-forming layer. A layer capable of easily forming an insulating layer, such as a polycrystalline silicon layer, is provided on the silicon carbide layer to form first electrodes, followed by insulation of the surface, such as oxidation of the surfaces of the first electrodes and the silicon carbide layer. Second electrodes are further formed in self alignment by utilizing the insulating layer of the surface of the first electrodes. This process is useful in preparation of a silicon carbide device capable of operation at high temperatures.

Abstract: A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

Abstract: An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Abstract: A method of making very pure cubic silicon carbide, SiC, comprising the steps of: loading a first inner graphite cup of a Lely type furnace while cold with a large number of crystals of SiC that are used as substrates; sealing the first cup with a graphite lid; inserting the first cup into a second graphite cup and inserting them into the furnace; filling the area between the first cup and the second cup with SiC; heating the first cup to between 2300.degree. C. and 2700.degree. C. until an atmosphere saturated with Si, C, SiC.sub.2 and Si.sub.2 C is created; and cooling the furnace quickly to a temperature less than 1800.degree. C.

Abstract: A method of recovering intact at room temperature a layer of a first material, such as silicon carbide, produced by depositing it from the gas phase at a deposition temperature above room temperature on a substrate of a second material, such as silicon, having a different coefficient of thermal expansion than that of the first material. The substrate is separated from the layer prior to cooling, and then the separated layer is cooled to room temperature free of stresses otherwise present as a result of the different thermal expansions of the substrate and layer.