Abstract: A loadlock apparatus includes a loadlock chamber including a first opening and a second opening separated in a vertical direction; a first slit valve including a first valve plate configured to move between a first open position where the first opening is open and a first closed position where the first opening is closed, the first open position being a position moved downward from the first closed position; and a second slit valve including a second valve plate configured to move between a second open position where the second opening is open and a second closed position where the second opening is closed, the second open position being a position moved upward from the second closed position.

Abstract: A gas supply block may include a first block, a second block and a third block. The first block may include a first gas inlet passage configured to supply a first process gas. The second block may include a second gas inlet passage configured to supply a second process gas. The third block may be combined with the first block and the second block. The third block may be configured to diffuse and supply the first process gas and the second process gas into gas supply lines connected to the processing spaces.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: The element chip manufacturing method includes: a preparing process of preparing a substrate 1 including a plurality of element regions EA and a dividing region DA, the substrate 1 having a first principal surface 1X and a second principal surface 1Y; a groove forming process of forming a groove 13 in the dividing region DA from the first principal surface 1X side; and a grinding process of grinding the substrate 1 from the second principal surface 1Y side, to divide the substrate 1 into a plurality of element chips 20. The groove 13 includes a first region 13a constituted by a side surface having a first surface roughness, and a second region 13b constituted by a side surface having a second surface roughness larger than the first surface roughness. In the grinding process, grinding of the substrate 1 is performed until reaching the first region 13a of the groove 13.

Abstract: A method includes forming an active region on a substrate, forming a sacrificial gate stack engaging the active region, measuring a gate length of the sacrificial gate stack at a height lower than a top surface of the active region, selecting an etching recipe based on the measured gate length of the sacrificial gate stack, etching the sacrificial gate stack with the etching recipe to form a gate trench, and forming a metal gate stack in the gate trench.

Abstract: Plasma polymerisation apparatus is disclosed including a reaction zone and at least one gas inlet for supplying at least one monomer in a gaseous form to the reaction zone, a first electrode and a second electrode spaced apart and configured to generate an electric field in the reaction zone to form plasma polymer nanoparticulate material from the at least one monomer, a plurality of collectors configured to collect plasma-polymer nanoparticulate material formed in the reaction zone, the plurality of collectors being located adjacent the second electrode, and a cooling device located adjacent the second electrode and configured to cool the plurality of collectors. Also disclosed is plasma polymerisation apparatus that includes a confinement grid extending between a first electrode and a second electrode of the apparatus.

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

Abstract: A front opening unified pod includes a container body, a removable front door, and an air curtain apparatus. The container body has bottom and top walls, two side walls, a rear wall connected to the bottom, top, and side walls to define a receiving space, and an opening opposite to the rear wall. The front door closes the opening. The air curtain apparatus includes an air outflow module and an air inflow pipeline connected to the air outflow module. The air outflow module is disposed on one of the top and side walls, is adjacent to the opening, and is located within the receiving space so as to form a laminar air curtain adjacent to the opening for shielding the receiving space.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body along a first surface of the lid plate. The lid plate may define a plurality of apertures through the lid plate. The lid plate may further define a recess about each aperture of the plurality of apertures in the first surface of the lid plate. Each recess may extend partially through a thickness of the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each recess may receive at least a portion of one of the lid stacks of the plurality of lid stacks. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region.

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Abstract: Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

Abstract: Provided is a substrate processing apparatus, including a process chamber, a plasma shutter configured ascend to close the process chamber, and an upper liner on the process chamber, wherein the process chamber includes a process space in which a substrate process is performed, and an insertion passage adjacent to the process space and connecting the process space to an outside of the process chamber, wherein the upper liner includes an extension liner, wherein the extension liner faces a connection inner surface that upwardly extends from an inner end of a passage ceiling forming the insertion passage, and wherein, in a state where the plasma shutter ascends to close the process space, an upper end of the plasma shutter is inserted between the connection inner surface and the extension liner.

Abstract: A system may include a support surface for supporting a substrate, a plurality of first passages arranged to distribute flows of a first gas to establish a gas bearing to float the substrate above the support surface, and a plurality of second passages arranged to distribute flows of a second gas to convey the substrate along the support surface. A method may include floating a substrate above a support surface of a substrate support apparatus via a gas bearing; and while floating the substrate, conveying the substrate along the support surface by flowing gas toward a surface of the substrate and in a nonperpendicular direction relative to the surface of the substrate.

Abstract: An apparatus for transferring a substrate to a substrate processing chamber includes: a substrate transfer chamber including a floor surface portion having a traveling surface-side magnet provided therein and a sidewall portion having an opening for transferring the substrate therethrough; a substrate transfer module including a substrate holder and a floating body-side magnet acting a repulsive force with the traveling surface-side magnet, and configured to be movable on a traveling surface formed in a region provided with the traveling surface-side magnet by magnetic floating using the repulsive force; the substrate processing chamber connected to the substrate transfer chamber via a gate valve constituting a non-traveling region in which the substrate transfer module is not movable by the magnetic floating; and a transfer assist mechanism for assisting the transfer of the substrate by the substrate transfer module between the substrate transfer chamber and the substrate processing chamber via the non-trave

Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

Abstract: A substrate processing apparatus includes a substrate support configured to support and rotate a substrate, at least one first lower cleaning nozzle configured to spray a first cleaning liquid on a lower surface of the substrate, at least one second lower cleaning nozzle configured to spray a second cleaning liquid on the lower surface of the substrate, a bowl assembly disposed around the substrate support, the bowl assembly including a cup body providing an annular shaped accommodating space and inner and outer collection portions sequentially arranged in a radial direction in a lower portion of the cup body, an annular shaped discharge guide plate disposed in the receiving space of the bowl assembly under the substrate and extending outwardly from a circumference of the substrate, and a discharge separation plate provided within the receiving space of the bowl assembly to be movable upward and downward.

Abstract: According to various embodiments, a vacuum arrangement may comprise the following: a first dehydration chamber and a second dehydration chamber, which are gas-separated from one another; a substrate transfer chamber for changing clocked substrate transport into continuous substrate transport towards the second dehydration chamber; a first high-vacuum pump of gas-transfer type for evacuating the first dehydration chamber; and a second high-vacuum pump of gas-binding type for evacuating the second dehydration chamber; wherein the first dehydration chamber is, with respect to the substrate transport, arranged between the second dehydration chamber and the substrate transfer chamber.

Abstract: A sputtering system is suitable for sputtering a surface to be sputtered having sections. Each section has a projection height. The sputtering system includes a supporting plate, a sputtering array, and a controller. The sputtering array is arranged on the supporting plate. The sputtering array includes sputtering units. Each section corresponds to at least one of the sputtering units. Each sputtering unit has a driving shaft and a target. The target faces the surface to be sputtered. The controller is electrically connected the driving shaft. The driving shaft drives the target to move relative to the surface to be sputtered. The controller controls a distance between each sputtering unit and the corresponding section of the sections in the direction of the projection height to satisfy a given condition.

Abstract: Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

Abstract: A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Abstract: A disk for a magnetic recording apparatus is described. The disk includes a first surface extending along a first plane, a second surface extending along a second plane parallel to the first plane, and a disk thickness between the first surface and the second surface, measured along a first direction substantially normal to the first surface. The disk further includes an edge surface disposed along a perimeter of the disk and between the first surface and the second surface, where the edge surface extends along a third plane substantially perpendicular to the first surface, a first chamfer disposed between the first surface and the edge surface, and a second chamfer disposed between the second surface and the edge surface. In an aspect, a length of the edge surface measured along the first direction may be between 40% and 80% of the disk thickness.

Abstract: A substrate processing system includes a processing container body having an opening, a lid which closes an opening, a mover for relatively moving the lid with respect to the opening to open and close the opening, and a lock mechanism which locks the lid to the processing container body. The lock mechanism includes an arm member and a locking member. The arm member is provided on one of the processing container body and the lid and extends toward the other when the processing container body is located at a position where the lid is separated from the processing container body. The locking member restricts a displacement of the arm member by being engaged with a part of the arm member. This part is located beyond the gap space when the lid is at the separated position.

Abstract: A semiconductor manufacturing apparatus includes one or more process modules, a scheduler, and a transfer controller. A product wafer of a lot that is transferred from a load port to one of the one or more process modules is replenished such that a total number of wafers that are simultaneously processed in the one or more process modules becomes N. When an advance lot being processed and a post lot to be processed subsequent to the advance lot have a same processing condition, the scheduler creates the transfer plan to replenish with the product wafer of the post lot instead of a dummy wafer such that the transfer controller transfers the product wafer and the dummy wafer to the one or more process modules according to the created transfer plan.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: A chemical mechanical polishing apparatus includes a cleaning unit that cleans a substrate, a brushing unit that includes a plurality of roll brushes brushing the substrate and a driver driving the roll brushes, and a controlling unit that controls the driver. The controlling unit includes a time calculator that counts a usage time of the roll brushes, and a drive controller that reduces a distance between the roll brushes, based on the usage time of the roll brushes.

Abstract: A method of controlling gate formation of a semiconductor device includes acquiring a correlation between gate critical dimensions (CDs) and etching recipes for forming gate trenches; measuring a gate CD on a target wafer; determining an etching recipe based on the correction and the measured gate CD; and performing an etching process on the target wafer to form a gate trench with the determined etching recipe.

Abstract: A buffer unit for storing a substrate includes a housing having a buffer space inside, a substrate support unit that supports one or more substrates in the buffer space, a pressure adjustment unit that adjusts pressure in the buffer space, and a controller that controls the pressure adjustment unit. The pressure adjustment unit includes a gas supply line that supplies a gas for pressurizing the buffer space and a gas exhaust line that reduces the pressure in the buffer space. The controller controls the pressure adjustment unit to maintain the buffer space in a selected one of a filling mode in which the buffer space is filled with the gas and an exhaust mode in which the buffer space is evacuated.

Abstract: A system for testing a semiconductor may include a transfer chamber, at least one loadlock chamber and at least one test chamber. The transfer chamber may include a plurality of sidewalls. The loadlock chamber may be arranged on a first sidewall of the sidewalls of the transfer chamber. The loadlock chamber may include a carrier configured to receive a plurality of wafers. The test chamber may be arranged on a second sidewall of the sidewalls of the transfer chamber. When the transfer chamber is connected to the loadlock chamber, a pressure of the transfer chamber may be changed into a pressure of the loadlock chamber. When the transfer chamber is connected to the test chamber, the pressure of the transfer chamber may be changed into a pressure of the test chamber.

Abstract: A wafer inspection apparatus according to one embodiment is a wafer inspection apparatus including a plurality of inspection parts arranged in a height direction and a lateral direction, and includes a pair of air circulating means disposed at both ends in a longitudinal direction of an air circulating region including the plurality of inspection parts arranged in the lateral direction and configured to circulate air in the circulating region.

Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.

Abstract: A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.

Abstract: Description of a method and equipment for panel (900) treatment in the manufacture of printed circuit boards that includes the following phases: setting up a panel (900) with a first side (905), a second side (910) opposite the first side, and at least one through hole (915) in the thickness of the panel; positioning the opening (205) for an intake system (200) in contact with the first side (905) of the panel (900) so this opening (205) delimits a portion on the first side (905) containing the through hole (915); creating negative pressure within the intake system (200) and simultaneously exposing at least one portion on the second side (910) of this panel (900) to a flow of plasma, whereby this portion on the second side (910) contains the through hole (915).

Abstract: Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Abstract: Provided is a cleaning apparatus for cleaning a portion where a seating pad contacts or a hole into which a pin is inserted when a workpiece is placed. The cleaning apparatus for cleaning a workpiece having a placing portion and a reference hole, including: a table plate, a seating pad on which the workpiece is placed at the placing portion, a first nozzle that ejects a cleaning fluid, a pin inserted into the reference hole, and a second nozzle that ejects the cleaning fluid toward inside of the reference hole.

Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.

Abstract: There is provided a device and method for controlling a tightness of at least one transport enclosure for conveyance and atmospheric storage of semiconductor substrates, the transport enclosure including at least two ventilation ports, the device including at least one interface configured to be coupled to the transport enclosure, the interface including at least two connecting heads, at least one connecting head of the heads being formed by a measurement head configured to engage in a ventilation port of the ventilation ports of the transport enclosure, the measurement head including a projecting end piece, opening through at least one aperture, and a peripheral sealing element surrounding the end piece, all of the ventilation ports of the transport enclosure being coupled to the connecting head of the interface. There is also provided a method for controlling the tightness of the transport enclosure.

Abstract: Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.

Abstract: A film forming method for forming a film on a pattern and cleaning a space of a processing container configured to perform therein a plasma processing under a reduced pressure environment. The space is provided with a pedestal and an upper electrode configured to supply radio-frequency power. The upper electrode is disposed in the space to face the pedestal.

Abstract: Provided is an exhaust device with improved exhaust efficiency. The exhaust device includes: a plurality of exhaust ports in communication with an exhaust space and configured to exhaust gas in a first direction; a plurality of exhaust paths respectively connected to the plurality of exhaust ports; and a transfer port in communication with the plurality of exhaust paths and configured to exhaust gas in a second direction. More uniform processing of a substrate may be achieved through a substrate processing device using such an exhaust device.

Abstract: A system for sending a cassette pod is provided. The system includes a processing machine having a load port for receiving the cassette pod. The system further includes a manipulating apparatus positioned above the processing machine. The manipulating apparatus includes an intermediate module having a stage and a driving mechanism connected to the stage to change the position of the stage. The manipulating apparatus further includes a conveyor module having a gripper assembly for grasping the cassette pod.

Abstract: Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a particle monitoring device for particle detection includes several capacitive micro sensors mounted on a wafer substrate to detect particles under all pressure regimes, e.g., under vacuum conditions. In an embodiment, one or more capacitive micro sensors is mounted on a wafer processing tool to measure material deposition and removal rates in real-time during the wafer fabrication process. Other embodiments are also described and claimed.

Abstract: A super-junction structure is formed by alternately arrayed pluralities of N-pillars and of P-pillars. The P-pillars are formed by P-type materials filled in super-junction trenches. The super-junction trenches are formed in an N-type epitaxial layer, each formed by a bottom trench and a top trench stacked together. A side angle of the bottom trenches is greater than 90°, and the width of the bottom surface of each bottom trench is greater than that of the top surface of the trench. The side angle of the top trenches is smaller than 90°, and the width of the bottom surface of each top trench is smaller than the top surface of the trench. The super-junction trenches are of a waisted structure. The bottom trenches increase the bottom width of the super-junction trenches and improve the depletion of the bottoms of the N-pillars, increasing the breakdown voltage of the super-junction structure.

Abstract: A system for sending a cassette pod is provided. The system includes a processing machine having a load port for receiving the cassette pod. The system further includes a manipulating apparatus positioned above the processing machine. The manipulating apparatus includes an intermediate module having a stage and a driving mechanism connected to the stage to change the position of the stage. The manipulating apparatus further includes a conveyor module having a gripper assembly for grasping the cassette pod.

Abstract: There is provided a technique that includes: a first processing module including a first processing chamber for processing vertically arranged substrates; a second processing module including a second processing chamber for processing the substrates, the second processing chamber disposed adjacent to the first processing chamber; a first exhaust box storing a first exhaust system exhausting the first processing chamber; a second exhaust box storing a second exhaust system exhausting the second processing chamber; a common supply box controlling at least one of a flow path and a flow rate of process gases supplied into the first and second processing chambers; a first valve group connecting gas pipes from the common supply box to the first processing chamber such that a communication state is controllable; and a second valve group connecting the gas pipes from the common supply box to the second processing chamber such that a communication state is controllable.

Abstract: An electronic device manufacturing system may include a mainframe to which one or more process chambers of different size may be coupled. A different number of process chambers may be coupled to each facet (i.e., side wall) of the mainframe. The process chambers coupled to one facet may be of a different size than process chambers coupled to other facets. For example, one process chamber of a first size may be coupled to a first facet, two process chambers each of a second size different than the first size may be coupled to a second facet, and three process chambers each of a third size different than the first and second sizes may be coupled to a third facet. Other configurations are possible. The mainframe may have a square or rectangular shape. Methods of assembling an electronic device manufacturing system are also provided, as are other aspects.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity.

Abstract: A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

Abstract: An electrostatic particle beam combiner for creating a single source combining the properties of two particle beams which form a high brightness source of a selected mixture of ions of varying element types and energies. An electrostatic spherical lens is arranged to bend a low energy second particle beam along a circular path and thereafter to impinge on a surface of a sample, e.g., within a transmission electron microscope. A beam of high energy is injected into the electrostatic spherical lens through an aperture in the outer shell and steered by two spaced apart electrostatic deflectors so that the angle of entry and the point of entry can be independently adjusted so that the high energy beam leaves the spherical lens along a path which is coaxial and coincident with the second particle beam of low energy.