Differential Fluid Etching Apparatus Patents (Class 156/345.1)
  • Patent number: 11049747
    Abstract: A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: June 29, 2021
    Assignee: ADMAP INC.
    Inventor: Satoshi Kawamoto
  • Patent number: 10984988
    Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: April 20, 2021
    Assignee: THINKON NEW TECHNOLOGY JAPAN CORPORATION
    Inventors: Atsushi Ikari, Satoshi Fujii
  • Patent number: 10937697
    Abstract: A method of processing a wafer includes a cutting step of cutting the face side of the wafer with a cutting blade to form grooves therein along projected dicing lines, a first inspecting step of capturing an image of the grooves formed in the cutting step and inspecting a state of a chip in the captured image of the grooves, a protecting member sticking step of sticking a protective member to the face side of the wafer, a grinding step of holding the protective member side of the wafer on a chuck table and grinding a reverse side of the wafer to thin the wafer to a finished thickness, thereby dividing the wafer into device chips, a second inspecting step of capturing an image of the grooves exposed on the reverse side of the wafer and inspecting a state of a chip in the captured image of the grooves.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 2, 2021
    Assignee: DISCO CORPORATION
    Inventor: Tetsukazu Sugiya
  • Patent number: 10854725
    Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yi Lee, Cheng-Yen Tsai, Da-Yuan Lee
  • Patent number: 10840082
    Abstract: A method for cleaning SnO2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of 1%-60% into a plasma processing system. The SnO2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of 1%-60% reduces a rate of SnH4 gas decomposition into Sn powder.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: November 17, 2020
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Dustin Zachary Austin, Jeongseok Ha, Pei-Chi Liu
  • Patent number: 10808309
    Abstract: A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: October 20, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Mitsuhashi, Satoshi Nishimura
  • Patent number: 10811233
    Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: October 20, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Xue Yang Chang, Haitao Wang, Kei-Yu Ko, Reza Sadjadi
  • Patent number: 10615006
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10593554
    Abstract: A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: March 17, 2020
    Inventor: Jun Yang
  • Patent number: 10580617
    Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: March 3, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kijong Park, Jun-Youl Yang, Yongsun Ko, Kyunghyun Kim, Taeheon Kim, Jae Jin Shin
  • Patent number: 10546728
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10501843
    Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: December 10, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Biraja P. Kanungo, Vahid Firouzdor, Tom Cho
  • Patent number: 10435786
    Abstract: Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: October 8, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Danny D. Wang, Jun Tae Choi, Rupankar Choudhury, Zhong Qiang Hua, Juan Carlos Rocha-Alvarez, Jason Michael Lamb
  • Patent number: 10273386
    Abstract: Provided are a thermosetting adhesive sheet and a method for manufacturing a semiconductor device capable of reducing semiconductor wafer warping and chipping. The thermosetting adhesive sheet includes a thermosetting adhesive layer containing a resin component and a filler, the resin component containing a (meth)acrylate and a polymerization initiator, the (meth)acrylate containing a solid (meth)acrylate and a trifunctional or higher functional (meth)acrylate, content of the solid (meth)acrylate in the resin component being 55 wt % or more; a total value obtained by multiplying the number of functional groups per unit molecular weight of the (meth)acrylate by content of the (meth)acrylate in the resin component being 2.7E-03 or more, and blending amount of the filler being 80 to 220 pts. mass with respect to 100 pts. mass of the resin component.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: April 30, 2019
    Assignee: DEXERIALS CORPORATION
    Inventors: Daichi Mori, Tomoyuki Ishimatsu
  • Patent number: 10256123
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber with a combination of proportional and pulsed fluid control valves. A heat transfer fluid loop is thermally coupled to a chamber component, such as a chuck. The heat transfer fluid loop includes a supply line and a return line to each of hot and cold fluid reservoirs. In an embodiment, an analog valve (e.g., in the supply line) is controlled between any of a closed state, a partially open state, and a fully open state based on a temperature control loop while a digital valve (e.g., in the return line) is controlled to either a closed state and a fully open state.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Chetan Mahadeswaraswamy
  • Patent number: 10222202
    Abstract: An apparatus may include a processor and memory unit, including a control routine having a measurement processor to determine, based upon a first set of scatterometry measurements, a first change in a first dimension of a first set of substrate features along a first direction. The first set of substrate features may be elongated along a second direction perpendicular to the first direction. The measurement processor may be to determine, based upon a second set of scatterometry measurements, a second change in dimension of a second set of substrate features along the second direction, wherein the second set of substrate features is elongated along the first direction. The apparatus may include a control processor to generate an error signal when a figure of merit based upon the first change and the second change lies outside a target range.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: March 5, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Morgan D. Evans, Simon Ruffell, Tristan Y. Ma, Kevin Anglin
  • Patent number: 10217613
    Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: February 26, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tetsuo Kawanabe, Takumi Tandou, Tsutomu Tetsuka, Naoki Yasui
  • Patent number: 10214445
    Abstract: Embodiments of an article including a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: February 26, 2019
    Assignee: CORNING INCORPORATED
    Inventors: Shandon Dee Hart, Guangli Hu, Nicholas James Smith
  • Patent number: 9953825
    Abstract: An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: April 24, 2018
    Assignee: Lam Research Corporation
    Inventors: David Carman, Travis Taylor, Devin Ramdutt
  • Patent number: 9941108
    Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: April 10, 2018
    Assignee: Novellus Systems, Inc.
    Inventors: Haruhiro Harry Goto, David Cheung
  • Patent number: 9888727
    Abstract: An exemplary heating assembly includes a substrate, a heating part formed on the substrate, an electrode part connected with the heating part, and a liquid conducting body configured for absorbing tobacco liquid. The liquid conducting body is in tight contact with the substrate. The liquid conducting body is capable of conveying the tobacco liquid to the substrate.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: February 13, 2018
    Assignee: SHENZHEN FIRST UNION TECHNOLOGY CO., LTD.
    Inventors: Yonghai Li, Zhongli Xu, Shuyun Hu
  • Patent number: 9741529
    Abstract: A micro-chamber for inspecting sample material can be filled with sample material immersed in a liquid without the need of applying vacuum tubing's to the micro-chamber. The micro-chamber includes an inspection volume for holding the sample material for observation. The inspection volume is defined by a first rigid layer, a second rigid layer spaced from the first rigid layer, and a hermetic seal between the first and the second rigid layers. One of the rigid layers includes thin part can be punctured. The liquid with immersed sample material, when placed upon the thin part, is sucked into the evacuated inspection volume when the thin part is punctured.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: August 22, 2017
    Assignee: FEI Company
    Inventors: Luigi Mele, Pleun Dona, Gerard Nicolaas Anne van Veen
  • Patent number: 9728381
    Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: August 8, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Kikuchi, Satoshi Kayamori, Shinya Shima, Yuichiro Sakamoto, Kimihiro Higuchi, Kaoru Oohashi, Takehiro Ueda, Munehiro Shibuya, Tadashi Gondai
  • Patent number: 9564377
    Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: February 7, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Dominic J. Benvegnu, Boguslaw A. Swedek, David J. Lischka
  • Patent number: 9556507
    Abstract: Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole percent to about 30 mole percent. The alloying of yttrium oxide with a compatible oxide improves wear resistance, flexural strength, and fracture toughness of the protective coating, relative to pure yttrium oxide.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: January 31, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ren-Guan Duan, Juan Carlos Rocha-Alvarez, Jianhua Zhou
  • Patent number: 9541836
    Abstract: In accordance with some embodiments, a method and an apparatus for baking photoresist patterns are provided. The method includes putting a wafer over a heating assembly. A photoresist pattern is formed over a top surface of the wafer. The method further includes curing the wafer from the top surface of the wafer by a curing assembly while heating the wafer from a bottom surface of the wafer by a heating assembly.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: January 10, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Min Lin, De-Fang Huang, Ching-Hui Tsao
  • Patent number: 9472435
    Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: October 18, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vijay D. Parkhe, Steven E. Babayan, Konstantin Makhratchev, Zhiqiang Guo, Phillip R. Sommer, Dan A. Marohl
  • Patent number: 9403187
    Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: August 2, 2016
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Sei Negoro, Ryo Muramoto, Yasuhiko Nagai, Tsutomu Osuka, Keiji Iwata
  • Patent number: 9401286
    Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: July 26, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventor: Tetsuhiro Iwai
  • Patent number: 9337004
    Abstract: A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: May 10, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Alexei Marakhtanov, Rajhinder Dhindsa
  • Patent number: 9279758
    Abstract: Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element to the plasma; measuring the current; and evaluating a degree of erosion of the consumable part due to the plasma based on the measured current.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: March 8, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Roger Patrick
  • Patent number: 9269564
    Abstract: A thin film deposition apparatus includes a reaction chamber, a main disk installed in the reaction chamber, and a gas discharging unit disposed outside the main disk. The gas discharging unit recollects a gas in the reaction chamber, and includes: a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, and is ring-shaped with an open upper portion. At least one through hole is formed in the lower wall. A discharge sleeve is configured to be inserted into the through hole, wherein a gas outlet is formed in the discharge sleeve. An upper cover that is ring-shaped covers the open upper portion of the base member. A plurality of gas inlets are formed in the upper cover.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: February 23, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-Don Han, Jeen-Seok Cho
  • Patent number: 9263278
    Abstract: Methods of etching two doped silicon portions at two different etch rates are described. An n-type silicon portion may be etched faster than a p-type silicon portion when both are exposed and present on the same substrate. The n-type silicon portion may be doped with phosphorus and the p-type silicon portion may be doped with boron. In one example, the n-type silicon portion is single crystal silicon and the p-type silicon portion is polycrystalline silicon (a.k.a. polysilicon). The p-type silicon portion may be a polysilicon floating gate in a flash memory cell and may be located above a gate silicon oxide which, in turn, is above an n-type active area single crystal silicon portion. The additional trimming of the n-type active area silicon portion may reduce the accumulation of trapped charges during use and increase the lifespan of flash memory devices.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: February 16, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Vinod R. Purayath, Anchuan Wang, Nitin K. Ingle
  • Patent number: 9257295
    Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: February 9, 2016
    Assignee: Lam Research Corporation
    Inventors: Harmeet Singh, Alex Paterson
  • Patent number: 9184072
    Abstract: An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: November 10, 2015
    Assignee: Mattson Technology, Inc.
    Inventors: Daniel J. Devine, Charles Crapuchettes, Dixit Desai, Rene George, Vincent C. Lee, Yuya Matsuda, Jonathan Mohn, Ryan M. Pakulski, Stephen E. Savas, Martin Zucker
  • Patent number: 9159526
    Abstract: The plasma arc chamber is made in part of a one piece base fabricated from 95.95% pure tungsten having four rigid walls defining a rectangular central opening. A bottom plate closes the bottom of the base and a cover with a slit for the passage of an ion beam closes the top of the base. Liners are fitted into the bottom plate, the top of base and against the four walls of the base.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: October 13, 2015
    Assignee: ion TECHNOLOGY SOLUTIONS, LLC
    Inventors: Manuel A. Jerez, Carlos F. M. Borges
  • Patent number: 9068262
    Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: June 30, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jozef Kudela, Jonghoon Baek, John M. White, Robin Tiner, Suhail Anwar, Gaku Furuta
  • Publication number: 20150140821
    Abstract: An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. The silicon oxide film has at least one of a silicon content per unit volume, a fluorine content per unit volume, and a volume density that varies in a depth direction.
    Type: Application
    Filed: June 24, 2013
    Publication date: May 21, 2015
    Inventor: Kazuhiro Kubota
  • Publication number: 20150136171
    Abstract: A plasma ashing system includes a process chamber including a substrate. A carrier gas supply supplies a carrier gas to the processing chamber. A plasma source is configured to create plasma to the process chamber. A liquid injection source is configured to at least one of inject a compound into the plasma or supply the compound into the plasma. The compound is normally a liquid at room temperature and at atmospheric pressure. A controller is configured to control the liquid injection source, to expose the substrate to the plasma for a predetermined period and to purge reactants from the processing chamber after the predetermined period.
    Type: Application
    Filed: November 18, 2013
    Publication date: May 21, 2015
    Applicant: Lam Research Corporation
    Inventors: Carlo Waldfried, Orlando Escorcia
  • Publication number: 20150136732
    Abstract: A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.
    Type: Application
    Filed: November 19, 2014
    Publication date: May 21, 2015
    Inventors: Xianmin TANG, Ludovic GODET, Guojun LIU, Jing TANG, Phillip STOUT, Rong TAO
  • Publication number: 20150140828
    Abstract: A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel.
    Type: Application
    Filed: May 27, 2013
    Publication date: May 21, 2015
    Inventor: Masafumi Urakawa
  • Publication number: 20150136730
    Abstract: A method for polishing a carbon overcoat of a magnetic media that results in a smooth surface free of carbon cluster debris. The method involves forming a magnetic disk having a carbon overcoat formed thereon. The carbon overcoat is then polished in the presence of ozone (O3). The heat from the polishing process along with the presence of the ozone, cause any carbon particles removed by the polishing to form CO2 gas so that there is no remaining carbon particle debris on the surface of the disk.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Thomas E. Karis, Bruno Marchon, Bala K. Pathem, Franck D. Rose dit Rose, Kurt A. Rubin, Erhard Schreck
  • Publication number: 20150140717
    Abstract: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 21, 2015
    Inventor: Andrea URBAN
  • Publication number: 20150132959
    Abstract: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to the e-beam or UV radiation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; depositing a thin photo-sensitive CVD hardmask film over the CVD film; exposing the thin photo-sensitive CVD hardmask film to e-beam or UV radiation, forming a pattern in the thin photo-sensitive CVD hardmask film; etching the pattern in the thin photo-sensitive CVD hardmask film; etching the pattern into the CVD film through the patterned thin photo-sensitive CVD hardmask film; and removing the patterned thin photo-sensitive CVD hardmask film.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Inventors: Leonard TEDESCHI, Srinivas NEMANI
  • Publication number: 20150129133
    Abstract: The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the substrate introduced into the chamber in a plasma state, wherein the plasma source moves in parallel with the substrate, whereby the substrate can be uniformly plasma-processed.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicants: ALLIED TECHFINDERS CO., LTD.
    Inventor: Kee Won SUH
  • Publication number: 20150129130
    Abstract: Systems to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a back-side process system deposits a metal layer on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process.
    Type: Application
    Filed: January 12, 2015
    Publication date: May 14, 2015
    Inventor: Kezia Cheng
  • Publication number: 20150122772
    Abstract: A method of forming a wave guide for a heat assisted magnetic recording slider of a disk drive includes depositing a layer of waveguide material onto a substrate, and depositing a layer of a hard mask material onto the waveguide material. The method then includes depositing a layer of photoresist onto the hard mask material, and exposing the photoresist to produce a hard mask pattern that includes a waveguide pattern. The method also includes stripping the photoresist material leaving the hard mask pattern having a first line edge roughness. The method also includes removing the waveguide material not covered by the hard mask, the waveguide having sidewalls which having a line edge roughness which is substantially equal to the first line edge roughness. Also disclosed is an apparatus for accomplishing the method.
    Type: Application
    Filed: November 7, 2013
    Publication date: May 7, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Thomas William CLINTON, Kanaiyalal Chaturdas PATEL, Vijay Prakash Singh RAWAT, Sue Siyang ZHANG
  • Publication number: 20150122775
    Abstract: A processing kit for a plasma processing chamber. The processing kit includes a plurality of ceramic arc-shaped pieces. Each arc-shaped piece has a concave first end and a convex second end and the first end of each arc-shaped piece is configured to mate with an adjacent end of a neighboring arc-shaped piece to form a ring shaped inner isolator.
    Type: Application
    Filed: October 23, 2014
    Publication date: May 7, 2015
    Inventor: Ramprakash SANKARAKRISHNAN
  • Publication number: 20150126046
    Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 7, 2015
    Inventors: Merritt Funk, Megan Doppel, John Entralgo, Jianping Zhao, Toshihisa Nozawa
  • Publication number: 20150114567
    Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.
    Type: Application
    Filed: October 27, 2014
    Publication date: April 30, 2015
    Applicants: Greene, Tweed Technologies, Inc., TOKYO ELECTRON LIMITED
    Inventors: Nobuyuki NAGAYAMA, Naoyuki SATOH, Masahiko OKA, Yasuyuki MATSUOKA