Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Abstract: In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.

Abstract: A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing, and subsequently producing an examination region on the sample portion, the examination region including a target region to be examined, the method including producing a terracing zone including the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone, and ablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing in the region behind the notch, the surface is recessed substantially parallel to the original height

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC.

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

Abstract: A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.

Abstract: A planarization process is disclosed. The method includes forming a trench in an area of a material layer which has a relatively high loading condition for sputtering. The method further includes sputtering the material layer to make the material layer flat.

Abstract: Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

Abstract: A system for creating a substantially planar face in a substrate, the system including directing one or more beams at a first surface of a substrate to remove material from a first location, the beam being offset from a normal to the first surface by a curtaining angle; sweeping the one or more beams in a plane that is perpendicular to the first surface to mill one or more initial cuts, the initial cuts exposing a second surface that is substantially perpendicular to the first surface; rotating the substrate about an axis other than an axis normal to the first beam or parallel to the first beam; directing the first beam at the second surface to remove additional material from the substrate without changing the curtaining angle; and scanning the one or more beams in across the second surface to mill one or more finishing cuts.

Abstract: A method of wafer-scale marking includes coupling a first marking mask over a semiconductor wafer having unsingulated semiconductor devices thereon. The first marking mask has a plurality of first stencils therethrough and a surface of the wafer is plasma etched through the first stencils to form first markings in the surface. A second marking mask is coupled over the surface and includes a plurality of second stencils therethrough. The surface is plasma etched through the second stencils to form second markings in the surface. In implementations the first marking mask and second marking mask are simultaneously coupled over the surface and the first markings and second markings are simultaneously formed. In implementations a plurality of first windows of the first marking mask are aligned with the plurality of second stencils while a plurality of second windows of the second marking mask are aligned with the plurality of first stencils.

Abstract: The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by a grid assembly. Plasma is generated in the upper sub-chamber, and the substrate is positioned in the lower sub-chamber. The grid assembly includes at least two grids, each of which is negatively biased, and each of which includes perforations which allow certain species to pass through. The uppermost grid is negatively biased in order to repel electrons. The lowermost grid is biased further negative (compared to the uppermost grid) in order to accelerate positive ions from the upper to the lower sub-chamber. Etching gas is supplied directly to the lower sub-chamber.

Abstract: A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

Abstract: A cold plasma device for killing or reducing a microbiological pathogen, or denaturing a protein in food, in a food processing system using a cold plasma device. The cold plasma device directs a cold plasma at food or a food surface over an effective area for an effective amount of time. The cold plasma device can be a DBD electrode device, or an army of DBD electrode devices. A grounding rod assembly is also described.

Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.

Abstract: In some embodiments of the present disclosure, an apparatus includes an ionizer. The ionizer is configured to dispatch a reactive ion on a surface. The apparatus also has an implanter and the implanter has an outlet releasing an accelerated charged particle on the surface.

Abstract: Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.

Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract: A method of fabricating asymmetrical spacers, structures fabricated using asymmetrical spacers and an apparatus for fabricating asymmetrical spacers. The method includes: forming on a substrate, a structure having a top surface and opposite first and second sidewalls and having a longitudinal axis parallel to the sidewalls; forming a conformal layer on the top surface of the substrate, the top surface of the structure and the sidewalls of the structure; tilting the substrate about a longitudinal axis relative to a flux of reactive ions, the flux of reactive ions striking the conformal layer at acute angle; and exposing the conformal layer to the flux of reactive ions until the conformal layer is removed from the top surface of the structure and the top surface of the substrate leaving a first spacer on the first sidewall and a second spacer on the second sidewall, the first spacer thinner than the second spacer.

Abstract: A system and method are disclosed for the precision fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Microsytems, Nanosystems, Photonics, 3-D integration, heterogeneous integration, and Nanotechology devices and structures. The disclosed system and method can also be used in any fabrication technology to increase the precision and accuracy of the devices and structures being made compared to conventional means of implementation. A platform holds and moves a substrate to be machined during machining and a plurality of lasers and/or ion beams are provided that are capable of achieving predetermined levels of machining resolution and precision and machining rates for a predetermined application. The plurality of lasers and/or ion beams comprises a plurality of the same type of laser and/or ion beam.

Abstract: A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

Abstract: A treatment system is described for exposing a substrate to various processes. Additionally, a gas distribution system is configured to be coupled to and utilized with the treatment system in order to distribute process material above the substrate is provided. The treatment system includes a process chamber, a radical generation system coupled to the process chamber, a gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a temperature controlled pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Abstract: A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis.

Abstract: A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

Abstract: Methods of and hybrid factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A hybrid factory includes one or more tool sets for fabricating a thin-film battery.

Abstract: A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated.

Abstract: A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp?Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.

Abstract: A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.

Abstract: Disclosed are methods and apparatus for etching a sample, such as a semiconductor device or wafer. In general terms, embodiments of the present invention allow dry etching of a material on a sample, such as a copper material, at room temperature using a reactive substance, such as a chorine based gas. For example, the mechanisms of the present invention allow precise etching of a copper material to produce fine feature patterns without heating up the whole device or substrate to an elevated temperature such as 50° C. and above. The etching is assisted by simultaneously scanning a charged particle beam, such as an electron beam, and a photon beam, such as a laser beam, over a same target area of the sample while the reactive substance is introduced near the same target area. The reactive substance, charged particle beam, and photon beam act in combination to etch the sample at the target area. For example, a copper layer may be etched using the mechanisms of the present invention.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract: An apparatus for formation of element(s) of an electrochemical cell using a complete process. The apparatus includes a first work piece configured to a transfer device, a source of material in fluid form, a reaction region operably coupled to the source of material and a second work piece configured within a vicinity of the reaction region. The apparatus also has an energy source configured to the reaction region to subject a portion of the material to energy to substantially evaporate the portion of the material within a time period and cause deposition of a gaseous species derived from the evaporated material onto a surface region of the second work piece to form a thickness of material for a component of the solid state electrochemical device and a vacuum chamber to maintain at least the first and second work pieces, the reaction region, and the material within a vacuum environment.

Abstract: According to one embodiment, a protective film formed on a component in a plasma treatment apparatus and having a plasma resistance includes a base film formed on the component and having a concave-convex structure, and an upper film formed on the base film to cover the concave-convex structure.

Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound.

Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.

Abstract: The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder.

Abstract: The present invention generally relates to a method and apparatus to produce and apply a variety of surface cleaning and modification spray treatments. More specifically, the present invention provides the simultaneous steps of selectively removing one or more unwanted surface contaminants, including extremely hard coatings, exposing a native clean surface layer and modifying said exposed and cleaned native substrate surface layer to energetic radicals and radiation to improve adhesion, wettability or coatability. Reactive species in combination with non-reactive, but chemically or physically active, species provide a reaction control and surface treatment environment by which contaminants and surface interlayers are oxidatively, physically and/or chemically removed or modified to prepare an underlying substrate surface for subsequent bonding, deposition, coating and curing operations. Substrates treated in accordance with the present invention have cleaner and higher surface free energy surfaces.

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, and improving the resistance to plasma erosion of a coating formed on the surface of the member or the like in the corrosive gas atmosphere and preventing the occurrence of particles of a corrosion product even under a high plasma power. As a means therefore, in a plasma treating apparatus wherein a surface of a body to be treated in a chamber is subjected to a plasma treatment with an etching gas, at least surfaces of sites of the chamber itself exposing to the plasma atmosphere, or surfaces of a member or parts accommodated in the chamber are covered with a composite layer including a porous layer made from a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer.

Abstract: Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N2 with using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.

Abstract: An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.

Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.