With Means To Direct Electron Beam Or Ion Beam To A Gas To Energize The Gas Patents (Class 156/345.4)
  • Patent number: 10665416
    Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: May 26, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Shinji Kubota, Naohiko Okunishi, Yosuke Tamuro, Shota Kaneko
  • Publication number: 20150129130
    Abstract: Systems to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a back-side process system deposits a metal layer on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process.
    Type: Application
    Filed: January 12, 2015
    Publication date: May 14, 2015
    Inventor: Kezia Cheng
  • Patent number: 9011635
    Abstract: A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: April 21, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Yuki Hosaka, Naokazu Furuya, Mitsunori Ohata
  • Publication number: 20150079796
    Abstract: A cluster source is used to assist charged particle beam processing. For example, a protective layer is applied using a cluster source and a precursor gas. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas.
    Type: Application
    Filed: July 31, 2014
    Publication date: March 19, 2015
    Applicant: FEI Company
    Inventors: Clive D. Chandler, Noel Smith
  • Patent number: 8951384
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: February 10, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Publication number: 20140363978
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Application
    Filed: June 10, 2013
    Publication date: December 11, 2014
    Inventors: Aiden Martin, Milos Toth
  • Publication number: 20140357088
    Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 4, 2014
    Applicant: FEI Company
    Inventors: Chad Rue, Clive D. Chandler
  • Patent number: 8858753
    Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: October 14, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Chishio Koshimizu, Jun Yamawaku, Tatsuo Matsudo, Masashi Saito
  • Patent number: 8845856
    Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: September 30, 2014
    Assignee: Lam Research Corporation
    Inventors: Michael S. Kang, Michael C. Kellogg, Migùel A. Saldana, Travis R. Taylor
  • Publication number: 20140087483
    Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.
    Type: Application
    Filed: March 19, 2013
    Publication date: March 27, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuichi OHSAWA, Junichi Ito, Saori Kashiwada, Chikayoshi Kamata, Naoki Tamaoki
  • Patent number: 8607732
    Abstract: In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: December 17, 2013
    Assignees: Kabushiki Kaisha Toyota Jidoshokki, National University Corporation Ehime University
    Inventors: Kenji Shibata, Toshihisa Shimo, Kyoko Kumagai, Hidetaka Hayashi, Shinya Okuda, Shinfuku Nomura, Hiromichi Toyota
  • Publication number: 20130306597
    Abstract: A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched.
    Type: Application
    Filed: July 25, 2013
    Publication date: November 21, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Isao Gunji, Hidenori Miyoshi, Kenichi Hara
  • Patent number: 8530006
    Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: September 10, 2013
    Assignee: FEI Company
    Inventors: Clive D. Chandler, Noel Smith
  • Publication number: 20130098552
    Abstract: A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Publication number: 20130098551
    Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Publication number: 20130098872
    Abstract: An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Publication number: 20130098553
    Abstract: A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Kallol Bera, Kenneth S. Collins, Shahid Rauf, Leonid Dorf
  • Publication number: 20130001195
    Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: SEAGATE TECHNOLOGY, LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
  • Publication number: 20120298617
    Abstract: One or more techniques for nano structure fabrication are provided. In an embodiment, an apparatus for manufacturing a nano structure is disclosed. The apparatus includes a stamp having a line pattern on a surface thereof that comprises a plurality of protrusions, a die configured to hold a substrate thereon, and a mechanical processing unit configured to press the plurality of protrusions of the stamp against the substrate with a predetermined pressure so as to form at least one channel pore therebetween.
    Type: Application
    Filed: July 27, 2012
    Publication date: November 29, 2012
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventor: Kwangyeol LEE
  • Patent number: 8277603
    Abstract: A move mechanism for horizontally moving a target object in an accelerating manner, includes a moving unit configured to be horizontally moved in an accelerating manner, a plate part arranged on the moving unit and supported by the moving unit at a substantially center-of-gravity height position, and a mirror part configured to reflect a laser beam for measuring a position, the mirror part being connected to the plate part such that a center-of-gravity height position of the mirror part is arranged at the substantially center-of-gravity height position of the plate part.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: October 2, 2012
    Assignee: NuFlare Technology, Inc.
    Inventors: Shuichi Tamamushi, Shuichiro Fukutome
  • Publication number: 20120055633
    Abstract: An apparatus for formation of element(s) of an electrochemical cell using a complete process. The apparatus includes a first work piece configured to a transfer device, a source of material in fluid form, a reaction region operably coupled to the source of material and a second work piece configured within a vicinity of the reaction region. The apparatus also has an energy source configured to the reaction region to subject a portion of the material to energy to substantially evaporate the portion of the material within a time period and cause deposition of a gaseous species derived from the evaporated material onto a surface region of the second work piece to form a thickness of material for a component of the solid state electrochemical device and a vacuum chamber to maintain at least the first and second work pieces, the reaction region, and the material within a vacuum environment.
    Type: Application
    Filed: November 9, 2011
    Publication date: March 8, 2012
    Applicant: Sakti3, Inc.
    Inventors: Hyoncheol KIM, Marc LANGLOIS, Myoungdo CHUNG, Ann Marie SASTRY
  • Patent number: 8087379
    Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: January 3, 2012
    Assignee: FEI Company
    Inventors: Clive D. Chandler, Noel Smith
  • Publication number: 20110277932
    Abstract: Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.
    Type: Application
    Filed: July 25, 2011
    Publication date: November 17, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Dean C. Jennings, Majeed Foad, Jonathan Simmons
  • Patent number: 7997227
    Abstract: An apparatus for providing a vacuum coating to a workpiece, including: a coating chamber containing a coating material, with the coating chamber being operable at an elevated temperature and a sub-atmospheric pressure; an electron beam gun projecting an electron beam into the coating chamber and onto the coating material, where the electron beam gun is operable to melt the coating material and to evaporate molten coating material; and, a mechanism for supporting manipulating the workpiece in the coating chamber. The supporting mechanism further includes: a coupling device for retaining the workpiece; a joint connected to the coupling device enabling movement of the workpiece in all directions; an intermediate member connecting the coupling device and the joint; and, a device connected to the intermediate member for moving the workpiece in a designated vertical plane.
    Type: Grant
    Filed: March 13, 2007
    Date of Patent: August 16, 2011
    Assignee: General Electric Company
    Inventors: Robert William Bruce, Theodore Robert Grossman, John Douglas Evans, Sr., Brian Harvey Pilsner
  • Patent number: 7935218
    Abstract: An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second type of gas to a space adjacent the surface. Particles of the first and second types of gas are capable of reacting with the surface, when activated by the radiation beam. The gas source is configured to generate a combination of surface occupation numbers of molecules of the first and second types of gas on the surface under operating conditions, at least prior to pulses of the radiation beam, the combination of surface occupation numbers lying in a range in which reactions of particles with the surface during pulses of the radiation beam are in majority reversed.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: May 3, 2011
    Assignee: ASML Netherlands B.V.
    Inventors: Johannes Hubertus Josephina Moors, Vadim Yevgenyevich Banine, Bastiaan Theodoor Wolschrijn, Carolus Ida Maria Antonius Spee, Rik Jansen
  • Publication number: 20110094681
    Abstract: A device for cleaning objects includes, a device for drawing in surrounding air, a device for producing plasma and a device for blowing out a mixture of surrounding air and plasma into the object to be cleaned. The device is used preferably in household applications in the cleaning and sanitization of mattresses, joints and walls.
    Type: Application
    Filed: June 30, 2009
    Publication date: April 28, 2011
    Applicant: Reinhausen Plasma GmbH
    Inventors: Michael Bisges, Thorsten Krüger, Patrick Wichmann, Hans-Jürgen Arning
  • Patent number: 7917241
    Abstract: A method and system of location specific processing on a plurality of substrates is described. The method comprises measuring metrology data for the plurality of substrates. Thereafter, the method comprises computing correction data for a first substrate using the metrology data, followed by computing correction data for a second substrate using the metrology data. While computing the correction data for a second substrate, the method comprises applying the correction data for a first substrate to the first substrate using a gas cluster ion beam (GCIB).
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: March 29, 2011
    Assignee: TEL Epion Inc.
    Inventors: Nicolaus J. Hofmeester, Steven P. Caliendo
  • Publication number: 20110056625
    Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
    Type: Application
    Filed: November 12, 2010
    Publication date: March 10, 2011
    Inventors: Neal R. Rueger, Mark J. Williamson, Gurtej S. Sandhu
  • Publication number: 20110030896
    Abstract: There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, and improving the resistance to plasma erosion of a coating formed on the surface of the member or the like in the corrosive gas atmosphere and preventing the occurrence of particles of a corrosion product even under a high plasma power. As a means therefore, in a plasma treating apparatus wherein a surface of a body to be treated in a chamber is subjected to a plasma treatment with an etching gas, at least surfaces of sites of the chamber itself exposing to the plasma atmosphere, or surfaces of a member or parts accommodated in the chamber are covered with a composite layer including a porous layer made from a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer.
    Type: Application
    Filed: September 30, 2010
    Publication date: February 10, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yoshiyuki KOBAYASHI
  • Patent number: 7833381
    Abstract: The present invention provides a method and apparatus for improving optical sensing of a plasma process through the use of a fiber optic sensor placed within a standard showerhead hole of a standard gas showerhead positioned in an upper electrode of a plasma system during the plasma processing of a substrate. A film property can be calculated based on the measured plasma emission from the surface of the substrate. The film property can be film deposition rate, refractive index, film thickness, etc. Based on the measured film property, the plasma processing of the substrate can be adjusted and/or terminated. In addition, a window is provided that is positioned in the upper electrode assembly for viewing the plasma emission through the standard showerhead hole.
    Type: Grant
    Filed: August 10, 2006
    Date of Patent: November 16, 2010
    Inventor: David Johnson
  • Patent number: 7789992
    Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: September 7, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Won-tae Lee
  • Publication number: 20100215541
    Abstract: A device for producing high power microwave plasmas. The device comprises at least one microwave feed that is surrounded by at least one dielectric tube. A dielectric fluid flows through the space between the microwave feed and the outer dielectric tube. The dielectric fluid has a small dielectric loss factor tan ? in the region of between 10?2 to 10?7. A fluid cools at least the outer dielectric tube.
    Type: Application
    Filed: October 11, 2007
    Publication date: August 26, 2010
    Inventor: Ralf Spitzl
  • Patent number: 7777197
    Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
    Type: Grant
    Filed: June 22, 2006
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Amir Al-Bayati, Lester A. D'Cruz, Alexandros T. Demos, Dale R. Dubois, Khaled A. Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Carlos Rocha-Alvarez, Ashish Shah, Takashi Shimizu
  • Patent number: 7713377
    Abstract: Apparatus is provided for plasma treating a substrate. This has a chamber (2) and a plasma generator (4) which forms a plasma from one or more gases flowing within the chamber so as to produce one or more species for interacting with a substrate (8) placed within the chamber. A guide (12) is provided for directing the gas flow containing the species towards the substrate (8). When in use, the width of the plasma is greater than that of the substrate by an amount defining an outer region of plasma. The guide is adapted to direct the species from at least substantially all of the outer region of the plasma towards the substrate. A corresponding method of plasma treatment is also disclosed.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: May 11, 2010
    Assignee: Oxford Instruments Plasma Technology Limited
    Inventors: Michael Joseph Cooke, Geoffrey Hassall
  • Publication number: 20090053395
    Abstract: A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, whereas the cross section comprises at least one first portions made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are preformed while the specimen is placed in a vacuumed chamber.
    Type: Application
    Filed: April 15, 2008
    Publication date: February 26, 2009
    Inventor: Dror Shemesh
  • Patent number: 7444955
    Abstract: An apparatus for coating surfaces of a workpiece is configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal passageways exhibits intended characteristics, such as those relating to smoothness or hardness. The coating apparatus may include any or all of a number of cooperative systems, including a plasma generation system, a manipulable workpiece support system, an ionization excitation system configured to increase ionization within or around the workpiece, a biasing system for applying a selected voltage pattern to the workpiece, and a two-chamber system that enables the plasma generation to take place at a first selected pressure and the deposition to occur at a second selected pressure.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: November 4, 2008
    Assignee: Sub-One Technology, Inc.
    Inventors: William John Boardman, Raul Donate Mercado, Andrew William Tudhope
  • Publication number: 20080245478
    Abstract: A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10?7 to 10?1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated
    Type: Application
    Filed: April 23, 2008
    Publication date: October 9, 2008
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, NGK INSULATORS, LTD.
    Inventors: Eiki Hotta, Naohiro Shimizu, Yuichiro Imanishi
  • Publication number: 20080233755
    Abstract: A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO4) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages.
    Type: Application
    Filed: March 22, 2007
    Publication date: September 25, 2008
    Inventors: Claude Blais, Eric Duchesne, Kang-Wook Lee, Sylvain Ouimet, Gerald J. Scilla
  • Publication number: 20080153306
    Abstract: A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.
    Type: Application
    Filed: December 11, 2007
    Publication date: June 26, 2008
    Inventors: Seon-Mee Cho, Majeed A. Foad
  • Patent number: 7367138
    Abstract: Apparatus and methods are disclosed for reducing particle contamination of a surface of an object such as a reticle used in an EUV lithography system. An exemplary apparatus includes a thermophoresis device and an electrophoresis device. The thermophoresis device is situated relative to and spaced from the surface, and is configured to produce a thermophoretic force, in a gas flowing past and contacting the surface, sufficient to inhibit particles in the gas from contacting the surface. The electrophoresis device is situated relative to a region of the surface contacted by the gas and is configured to deflect particles, having an electrostatic charge, in the gas away from the region as the gas flows past the region.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: May 6, 2008
    Assignee: Nikon Corporation
    Inventor: Michael R. Sogard
  • Publication number: 20080023440
    Abstract: A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio frequency (RF) power. For example, a plasma processing system is described having a first RF power coupled to a lower electrode, which may support the substrate, a second RF power coupled to an upper electrode that opposes the lower electrode, and a negative high voltage direct current (DC) power coupled to the upper electrode to form the ballistic electron beam. The amplitude of the second RF power is modulated to affect changes in the uniformity of the ballistic electron beam flux.
    Type: Application
    Filed: July 31, 2006
    Publication date: January 31, 2008
    Applicants: Tokyo Electron Limited, Texas Instruments
    Inventors: Lee Chen, Ping Jiang
  • Publication number: 20070278180
    Abstract: A method of imaging and identifying materials on and below the surface of a structure is described. The method may be used in areas as small as one micron in diameter, and may remove a thin portion of the topmost material, repeating the analysis, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. The reaction products from the radical attack on the surface are pumped away from the surface and analyzed using various methods, such as optical emission, infrared, atomic absorption, or Raman spectroscopy.
    Type: Application
    Filed: June 1, 2006
    Publication date: December 6, 2007
    Inventors: Mark J. Williamson, Gurtej S. Sandhu, Justin R. Arrington, Neal R. Rueger
  • Patent number: 7276140
    Abstract: A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: October 2, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-woo Yoo, Won-taek Park
  • Patent number: 7201824
    Abstract: An apparatus for precisely steering a beam of light by making use of a hybrid inter optical alignment that occurs when a beam steering mechanism is micro-machined with respect to a crystallographic orientation of a substrate.
    Type: Grant
    Filed: August 16, 2002
    Date of Patent: April 10, 2007
    Inventor: Ronald S. Maynard
  • Patent number: 7132621
    Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.
    Type: Grant
    Filed: May 7, 2003
    Date of Patent: November 7, 2006
    Assignee: Dana Corporation
    Inventors: Satyendra Kumar, Devendra Kumar
  • Patent number: 6936144
    Abstract: A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network is arranged within the plasma source.
    Type: Grant
    Filed: February 21, 2001
    Date of Patent: August 30, 2005
    Assignee: CCR GmbH Beschichtungstechnologie
    Inventors: Manfred Weiler, Roland Dahl
  • Patent number: 6843893
    Abstract: A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: January 18, 2005
    Assignee: International Business Machines Corporation
    Inventors: Steven B. Herschbein, Herschel M. Marchman, Chad Rue, Michael R. Sievers
  • Patent number: 6843927
    Abstract: Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.
    Type: Grant
    Filed: April 21, 2003
    Date of Patent: January 18, 2005
    Assignee: KLA-Tencor Technologies Corporation
    Inventor: Mehran Naser-Ghodsi
  • Publication number: 20040154744
    Abstract: A system for surface or cross-sectional processing and observation and a method of surface or cross-sectional processing and observation using the system. The system has a unit for processing a sample surface to expose a target surface or cross section and a scanning probe microscope unit for observing the exposed surface or cross section. According to the system and method, a scanning probe microscope capable of providing different kinds of information is used to form at least one target surface or cross section in a sample surface and to observe the target surface or cross section. This offers the following advantages: a spatial resolution comparable to that of a transmission electron microscope can be achieved; and electric, magnetic, and mechanical information for a target sample plane, which couldn't be obtained by the known method, can be monitored in a shorter operating time.
    Type: Application
    Filed: January 16, 2004
    Publication date: August 12, 2004
    Inventors: Takashi Kaito, Masatoshi Yasutake, Toshiaki Fujii, Shigeru Wakiyama, Osamu Takaoka, Kouji Iwasaki
  • Patent number: H2212
    Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: April 1, 2008
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Scott G. Walton, Robert Meger, Richard Fernsler, Darrin Leonhardt