With Radio Frequency (rf) Antenna Or Inductive Coil Gas Energizing Means Patents (Class 156/345.48)
  • Patent number: 10395903
    Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: August 27, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Zhiying Chen, Lee Chen, Merritt Funk
  • Patent number: 10325758
    Abstract: A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: June 18, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
  • Patent number: 10327321
    Abstract: A microwave chamber for plasma generation. The microwave chamber comprises a launch structure at a first end of the microwave chamber to accommodate a microwave source for producing microwave energy and a termination section at a second end of the microwave chamber opposite the first end. The termination section is configured to substantially block propagation of the microwave energy from the second end of the chamber. The microwave chamber further comprises an internal wall structure for guiding the microwave energy received within the microwave chamber at the first end toward the second end and defines a cavity. The internal wall structure comprises an impedance matching section intermediate the first end and the second end, and a capacitive loaded section intermediate the impedance matching section and the second end, wherein the capacitive loaded section comprises at least one ridge extending along a longitudinal axis of the chamber.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: June 18, 2019
    Assignee: AGILENT TECHNOLOGIES, INC.
    Inventor: Michael Ron Hammer
  • Patent number: 10269938
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin structure over the base. The fin structure has sidewalls. The semiconductor device structure includes a passivation layer over the sidewalls. The passivation layer includes dopants. The dopants include at least one element selected from group 4A elements, and the dopants and the substrate are made of different materials. The semiconductor device structure includes an isolation layer over the base and surrounding the fin structure and the passivation layer. A first upper portion of the fin structure and a second upper portion of the passivation layer protrude from the isolation layer. The semiconductor device structure includes a gate electrode over the first upper portion of the fin structure and the second upper portion of the passivation layer.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Chin Hsu, Yi-Wei Chiu, Wen-Zhong Ho, Tzu-Chan Weng
  • Patent number: 10242847
    Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of three or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: March 26, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Zhigang Chen, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10242845
    Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: March 26, 2019
    Assignee: Lam Research Corporation
    Inventors: Zhongkui Tan, Yiting Zhang, Qian Fu, Qing Xu, Ying Wu, Saravanapriyan Sriraman, Alex Paterson
  • Patent number: 10096495
    Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: October 9, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Manabu Amikura, Toshiki Hinata
  • Patent number: 10050472
    Abstract: A controlling method and device for a wireless power transfer system, wherein the wireless power transfer system includes a transmitting component and a receiving component, and further includes a contactless transformer & compensation (CT&C) circuit, and the controlling method includes: obtaining positional relationship information of the transmitting component and the receiving component; adjusting the number of coil turns of the transmitting component based on the positional relationship information, and making conditions of a CT&C voltage gain characteristic and an input impedance characteristic after a charging inverter bridge of the wireless power transfer system meet a charging condition. The abovementioned technical solution can provide a protection for a stable operation of the wireless power transfer system with a non-mechanical adjusting device, and the wireless charging can be achieved without using a mechanical adjusting device to align and range.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: August 14, 2018
    Assignee: ZTE Corporation
    Inventors: Cheng Guo, Feiyun Tang, Jie Fan, Yong Luo, Jianping Zhou, Chuan He, Chen Liu, Yaoguang Gao, Wei Liu, Beibei Qiu, Jing Wang, Jianquan Liu, Lin Chi
  • Patent number: 9970111
    Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: May 15, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kohei Fukushima, Hiroyuki Matsuura, Yutaka Motoyama, Koichi Shimada, Takeshi Ando
  • Patent number: 9953888
    Abstract: An electromagnetic detection device is provided. The electromagnetic detection device includes an induction coil, a converter, and a controller. The induction coil is utilized to sense an RF signal and generate a sensing RF signal by electromagnetic induction of the induction coil which is proportional to the RF signal. The RF signal is transmitted to a shower head to perform a semiconductor process on a wafer for manufacturing an IC in association with the RF signal. The converter is utilized to convert the sensing RF signal into a DC signal. The controller is utilized to determine whether the semiconductor process is normal or abnormal according to the DC signal during the semiconductor process. The semiconductor process will be terminated when the semiconductor process is determined as abnormal.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: April 24, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Wei Fang, Yao-Fong Dai, Chih-Tung Lo, Ming-Hsien Tsai, Kai-Wen Wu
  • Patent number: 9941097
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: April 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
  • Patent number: 9840772
    Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: December 12, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
  • Patent number: 9818584
    Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: November 14, 2017
    Assignee: FEI Company
    Inventors: Thomas G. Miller, Shouyin Zhang
  • Patent number: 9807862
    Abstract: A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: October 31, 2017
    Assignee: TOKOYO ELECTRON LIMITED
    Inventor: Hachishiro Iizuka
  • Patent number: 9754769
    Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: September 5, 2017
    Assignee: Lam Research Corporation
    Inventors: Yukinori Sakiyama, Yaswanth Rangineni, Jeremy Tucker, Douglas Keil, Edward Augustyniak, Sunil Kapoor
  • Patent number: 9685305
    Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: June 20, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maruyama, Masato Horiguchi, Tetsuri Matsuki, Akira Koshiishi
  • Patent number: 9677171
    Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: June 13, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
  • Patent number: 9596744
    Abstract: A radio frequency (RF) power supply is provided. The RF power supply includes a first frequency oscillator for generating a first frequency signal and a second frequency oscillator for generating a second frequency signal. Also provided is an amplifier and a first switch connected to an output of the first frequency oscillator and a second switch connected to an output of the second frequency oscillator. An output of the first switch and the second switch are connected to an input of the amplifier. Also provided is a switch control coupled to the first switch and the second switch. The switch control is configured to enable a connection via the first and second switches from only one of the first frequency oscillator or the second frequency oscillator to the amplifier at one time. The amplifier is configured to power amplify both of the first and second frequency signals from the first and second frequency oscillators.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: March 14, 2017
    Assignee: Lam Research Corporation
    Inventor: Karl F. Leeser
  • Patent number: 9595424
    Abstract: An impedance matching circuit (IMC) is described. The impedance matching circuit includes a first circuit. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The IMC includes a second circuit. The second circuit has an input coupled to a low frequency megahertz (MHz) RF generator. The IMC includes a third circuit. The third circuit has an input coupled to a high frequency MHz RF generator. The IMC includes an output of the first, second, and third circuits coupled to an input of an RF transmission line. The first circuit and the second circuit provide isolation between a kHz RF signal sent through the first circuit and a low frequency MHz RF signal sent through the second circuit.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: March 14, 2017
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Felix Kozakevich, John Patrick Holland, Brett Jacobs
  • Patent number: 9530619
    Abstract: A filter unit 54(IN) includes a housing 82 formed of a cylindrical conductor. Further, in the housing 82, the air-core solenoid coils AL1 and BL1; the first capacitors AC1 and BC1; the troidal coils AL2 and BL2; and the second capacitors AC2 and BC2 are arranged in this sequence from top to bottom. In the vicinity of the air-core solenoid coils AL1 and BL1, a multiple number of rod-shaped comb-teeth members 86, which are extended in parallel to a coil axis direction, are provided adjacent to outer peripheries of the air-core solenoid coils AL1 and BL1 at a regular interval in a circumferential direction thereof. A comb teeth M are formed on an inner surface of each comb-teeth member 86, and the comb teeth M are inserted into winding gaps of the air-core solenoid coils AL1 and BL1.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: December 27, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Naohiko Okunishi
  • Patent number: 9396960
    Abstract: A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: July 19, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuto Ogawa, Akira Nakagawa, Hideki Konishi
  • Patent number: 9273682
    Abstract: A pressure pump may include a reciprocating assembly including a dynamic seal configured to be in sliding contact with a surface. The surface may be implanted with positive ions such as hydrogen ions/protons to provided reduced wear and/or greater service life of the dynamic seal. According to embodiments, a pump may include an ultra-high molecular weight polyethylene dynamic seal may substantially fixed relative to a cylinder wall, and a proton impregnated reciprocating plunger may pump high pressure water or a water based fluid in a system. The pump may exhibit increased dynamic seal life.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: March 1, 2016
    Assignee: OMAX Corporation
    Inventor: Darren L. Stang
  • Patent number: 9257294
    Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: February 9, 2016
    Assignee: Micron Technology, Inc.
    Inventor: Neal R. Rueger
  • Patent number: 9214319
    Abstract: A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: December 15, 2015
    Assignee: Mattson Technology, Inc.
    Inventors: Vladimir Nagorny, Charles Crapuchettes
  • Patent number: 9184043
    Abstract: The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: November 10, 2015
    Assignee: Lam Research Corporation
    Inventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi, Yunsang Kim
  • Patent number: 9184021
    Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: November 10, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gaurav Saraf, Xiawan Yang, Farid Abooameri, Wen Teh Chang, Anisul H. Khan, Bradley Scott Hersch
  • Patent number: 9171734
    Abstract: A substrate processing apparatus includes a processing chamber accommodating a substrate; first and second process gas supply units that respectively supply first and second process gases from above and laterally relative to the substrate; and first and second reactive gas supply units that respectively supply first and second reactive gases from above and laterally relative to the substrate. A control unit controls the other units such that a total amount of the first and second process gases supplied to a center portion of the substrate is different from that supplied to a peripheral portion of the substrate, or a total amount of the first and second reactive gases supplied to the center portion of the substrate is different from that supplied to the peripheral portion of the substrate.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: October 27, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Kazuyuki Toyoda, Shun Matsui
  • Patent number: 9171724
    Abstract: A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: October 27, 2015
    Assignee: HITACHI KOKUSAIELECTRIC INC.
    Inventors: Shinji Yashima, Atsushi Umekawa
  • Patent number: 9155184
    Abstract: Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (PGS) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma. A dielectric conduit assembly may guide the gas and the plasma away from the internal surface where particulates may be generated. The dielectric conduit assembly includes a first and second cross-conduit segments. The dielectric conduit assembly further includes parallel conduit segments extending from the second cross-conduit segment to distal ends which removably align with first cross-conduit interfaces of the first cross-conduit segment without leaving gaps. In this manner, the dielectric conduit assembly is easily serviced, and reduces and contains particulate generation away from the output port.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: October 6, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Siu Tang Ng, Changhun Lee, Huutri Dao, Roberto Cesar Cotlear
  • Patent number: 9053895
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: June 9, 2015
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith
  • Patent number: 9039866
    Abstract: The present invention relates to a method of manufacturing a web of a plurality of conductive structures which may be used for example to produce an antenna, electronic circuit, photovoltaic module or the like. The method involved simultaneously patterning at least one pattern in a conductive layer using a plurality of registration marks. The registration marks serve to align and guide the creation of the plurality of conductive structures. Optical brighteners may also be utilized within the adhesive layer and the registration marks of the present invention in order to detect the location where conductive structures are to be placed.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: May 26, 2015
    Assignee: Avery Dennison Corporation
    Inventors: Ian J. Forster, Christian K. Oelsner, Robert Revels, Benjamin Kingston, Peter Cockerell, Norman Howard
  • Patent number: 9039865
    Abstract: The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: May 26, 2015
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Ken Yoshioka, Motohiko Yoshigai, Ryoji Nishio, Tadayoshi Kawaguchi
  • Patent number: 9035553
    Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: May 19, 2015
    Inventor: Dae-Kyu Choi
  • Publication number: 20150129133
    Abstract: The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the substrate introduced into the chamber in a plasma state, wherein the plasma source moves in parallel with the substrate, whereby the substrate can be uniformly plasma-processed.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicants: ALLIED TECHFINDERS CO., LTD.
    Inventor: Kee Won SUH
  • Publication number: 20150126036
    Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from ?60%, and F in a range of ?75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 7, 2015
    Inventor: Jianping Zhao
  • Patent number: 9016236
    Abstract: A high-density plasma chemical vapor deposition tool and the method for use of the tool is disclosed. The chemical vapor deposition tool allows for angular adjustment of the pedestal that holds the substrate being manufactured. Electromagnets serve as an “electron filter” that allows for angular deposition of material onto the substrate. Methods for fabrication of trench structures and asymmetrical spacers in a semiconductor manufacturing process are also disclosed. The angular deposition saves process steps, thereby reducing time, complexity, and cost of manufacture, while improving overall product yield.
    Type: Grant
    Filed: August 4, 2008
    Date of Patent: April 28, 2015
    Assignee: International Business Machines Corporation
    Inventors: Daewon Yang, Kangguo Cheng, Pavel Smetana, Richard S. Wise, Keith Kwong Hon Wong
  • Patent number: 8999105
    Abstract: An etch mask is formed on a substrate. The substrate is positioned in an enclosure configured to shield an interior of the enclosure from electromagnetic fields exterior to the enclosure; and the substrate is etched in the enclosure, including removing a portion of the substrate to form a structure having at least a portion that is isolated and/or suspended over the substrate.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: April 7, 2015
    Assignee: President and Fellows of Harvard College
    Inventors: Marko Loncar, Mikhail D. Lukin, Michael J. Burek, Nathalie de Leon, Brendan Shields
  • Patent number: 8999104
    Abstract: A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: April 7, 2015
    Assignee: Lam Research Corporation
    Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
  • Publication number: 20150090401
    Abstract: An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 2, 2015
    Inventors: Banqiu Wu, Saravjeet Singh, Amitabh Sabharwal, Ajay Kumar
  • Patent number: 8992724
    Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: March 31, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Shunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
  • Patent number: 8992725
    Abstract: The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with plasma. The main part of the plasma reactor is an array of RF antenna cells, which are deeply immersed into the interior of the working chamber. Each antenna cell has a ferromagnetic core with a heat conductor and a coil wound onto the core. The core and coil are sealed in the protective cap. Deep immersion of the antenna cells having the structure of the invention provides high efficiency of plasma excitation, while the arrangement of the plasma cells and possibility of their individual adjustment provide high uniformity of plasma distribution and possibility of adjusting plasma parameters, such as plasma density, in a wide range.
    Type: Grant
    Filed: August 23, 2007
    Date of Patent: March 31, 2015
    Assignee: Mattson Technology, Inc.
    Inventor: Valery Godyak
  • Publication number: 20150075716
    Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones.
    Type: Application
    Filed: September 13, 2013
    Publication date: March 19, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kartik Ramaswamy, Kenneth S. Collins, Shahid Rauf, Steven Lane, Yang Yang, Lawrence Wong
  • Publication number: 20150075717
    Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling.
    Type: Application
    Filed: September 13, 2013
    Publication date: March 19, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kartik Ramaswamy, Kenneth S. Collins, Shahid Rauf, Steven Lane, Yang Yang, Lawrence Wong
  • Patent number: 8980049
    Abstract: Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
    Type: Grant
    Filed: April 1, 2008
    Date of Patent: March 17, 2015
    Assignee: Charm Engineering Co., Ltd.
    Inventors: Won Haeng Lee, Kwan Goo Rha, Jung Hee Lee, Chul Hee Jang, Hyang Joo Lee, Dong Wan Kim
  • Patent number: 8980760
    Abstract: Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: March 17, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Ankur Agarwal, Ajit Balakrishna, Shahid Rauf
  • Patent number: 8980046
    Abstract: A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: March 17, 2015
    Assignee: Lam Research Corporation
    Inventors: Akira Koshiishi, Peter L. G. Ventzek, Jun Shinagawa, John Patrick Holland
  • Publication number: 20150068682
    Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.
    Type: Application
    Filed: August 19, 2014
    Publication date: March 12, 2015
    Inventors: SAMER BANNA, TZA-JING GUNG, VLADIMIR KNYAZIK, KYLE TANTIWONG, DAN A. MAROHL, VALENTIN N. TODOROW, STEPHEN YUEN
  • Patent number: 8974629
    Abstract: A high density RF plasma source uses a special antenna configuration to launch waves at frequencies such as 13.56 MHz. The tunability of this antenna allows one to adapt actively the coupling of the RF energy into an evolutive plasma as found in plasma processing in semiconductor manufacturing. The plasma source can be used for plasma etching, deposition, sputtering systems, space propulsion, plasma based sterilization, and plasma abatement systems. Also, the plasma source can be used with one or several process chambers, which comprise an array of magnets and RF coils too. These elements can be used for plasma confinement or active plasma control (plasma rotation) thanks to a feedback control approach, and for in situ NMR monitoring or analysis such as moisture monitoring inside a process chamber, before or after the plasma process, or for in situ NMR inspection of wafers or others work pieces.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: March 10, 2015
    Assignee: Helyssen SARL
    Inventors: Eric Chevalier, Philippe Guittienne
  • Patent number: 8974630
    Abstract: An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: March 10, 2015
    Assignee: Sungkyunkwan University
    Inventors: Geun-Young Yeom, Young-Joon Lee, Kyong-Nam Kim
  • Patent number: RE45527
    Abstract: There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: May 26, 2015
    Assignee: NEW POWER PLASMA CO., LTD.
    Inventor: Dae-Kyu Choi