Abstract: An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

Abstract: A method and apparatus are provided for electrolyzing a source liquid in an electrolytic device. The electrolytic device includes a first cathode in a cathode chamber; and an anode and a second, auxiliary cathode in an anode chamber. The anode chamber and cathode chamber are separated by a barrier, and the anode and the auxiliary cathode are separated by a gap that lacks a barrier. While electrolyzing the source liquid with the electrolytic device, a level of current applied to the auxiliary cathode is adjusted in response to pH of an anolyte liquid produced from the source liquid by the anode chamber to maintain the pH within a desired range.

Abstract: An electrochemical cell having a cation-conductive ceramic membrane and an acidic anolyte. Generally, the cell includes a catholyte compartment and an anolyte compartment that are separated by a cation-conductive membrane. While the catholyte compartment houses a primary cathode, the anolyte compartment houses an anode and a secondary cathode. In some cases, a current is passed through the electrodes to cause the secondary cathode to evolve hydrogen gas. In other cases, a current is passed between the electrodes to cause the secondary cathode to evolve hydroxyl ions and hydrogen gas. In still other cases, hydrogen peroxide is channeled between the secondary cathode and the membrane to form hydroxyl ions. In yet other cases, the cell includes a diffusion membrane disposed between the secondary cathode and the anode. In each of the aforementioned cases, the cell functions to maintain the pH of a fluid contacting the membrane at an acceptably high level.

Abstract: The present disclosure provides methods and systems for electrorefining high-purity materials, for example, silicon. An exemplary system includes at least one cathode, an anode, and a reference electrode. At least one controller, for example a potentiostat, is used to control the potential difference between a reference electrode and a cathode or anode. The system can be operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

Abstract: An electroplating apparatus including a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

Abstract: An electroplating apparatus is provided that includes a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an auxiliary electrode that is configured to function both as an auxiliary cathode and an auxiliary anode during the course of electroplating. The apparatus further includes an ionic current collimator (e.g., a focus ring) configured to direct ionic current from the main anode to central portions of the wafer. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. In one example, the auxiliary electrode functions as an auxiliary cathode in the beginning of electroplating when the terminal effect is pronounced, and subsequently is anodically biased.

Abstract: An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.

Abstract: Disclosed is a Nanotube Detangler capable of aligning and ordering the constituent nanotubes, nanowires and/or nanoparticles of a filament leading to greater tensile strength of the filament and subsequent threads or structures made from it. The technique exploits ion infusion as a mechanism to force the tangle of the nanotubes, nanowires and/or nanoparticles apart. Included in the invention are alignment enhancement technologies such as heating, vibration, electromagnetic, particle bombardment and chemical means. The present invention recognizes that aligned and ordered nanotubes, nanowires and nanoparticles in a filament will increase the conductivity of the filament and enable the fabrication of electric conductors, wires and circuit components. Such breakthroughs in strength and conductivity of filaments of nanotubes, nanowires and/or nanoparticles will revolutionize life on Earth.

Abstract: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating, an auxiliary cathode located between the anode and the ionically resistive ionically permeable element, and an insulating shield with an opening in its central region. The insulating shield may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the shield and the ionically resistive ionically permeable element during electroplating.

Abstract: An electrolysis device to separate water into its more economically valuable constituent hydrogen and oxygen gases. A neutral plate is interleaved between every magnetically charged electrode in an electrode stack to provide a means of spark suppression, a physical barrier between the hydrogen gas created at the cathode and oxygen gas created at the cathode, and to reduce deterioration of electrode surfaces caused by alternating polarity from an anode state to a cathode state. Scale of electrolysis cell electrodes are partially cleaned through a cycling of system polarity through a neutral electrode period. A means is provided to isolate and segregate dissociated hydrogen and oxygen gas.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An electroplating apparatus for depositing a conductive material on a semiconductor wafer includes a vessel for holding an electroplating bath, a support for holding a semiconductor wafer within the vessel and beneath a surface of the bath; first and second electrodes within the vessel, between which an electrical current may flow causing conductive material to be electrolytically deposited onto the wafer, a third electrode disposed outside of the bath for applying a static electric charge to the wafer, and an electrical power supply coupled with the third electrode.

Abstract: An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.

Abstract: An electrolyzing device is capable of removing scales adhered to a cathode in an electrolyzing mode without deteriorating an electrode forming an anode. An electrolyzing device includes a first main electrode 3, a second main electrode 4, an auxiliary electrode 5, and control means C for controlling current supply to the electrodes, the control means C includes an electrolyzing mode in which treated water is electrochemically treated by using the first main electrode 3 as an anode and the second main electrode 4 as a cathode, a scale removal mode of the second main electrode in which scales adhered to the second main electrode 4 are removed by using the second main electrode 4 as the anode and the auxiliary electrode 5 as the cathode, and a scale removal mode of the auxiliary electrode in which scales adhered to the auxiliary electrode 5 are removed by using the auxiliary electrode 5 as the anode and the second main electrode 4 as the cathode.

Abstract: A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec.

Abstract: A method for measuring an iodine adsorption number of carbon black includes: (a) electrochemically reducing an unknown amount of iodine adsorbed by a predetermined amount of a carbon black sample; (b) measuring the electrical charge used for reducing the unknown amount of the iodine adsorbed by the carbon black sample; and (c) obtaining the iodine adsorption number from the measured electrical charge. An electrolytic cell and a kit for measuring an iodine adsorption number of carbon black are also disclosed.

Abstract: A method and apparatus for adjusting an electric field of an electrochemical processing cell are provided. In one embodiment, a capacitive element is disposed in the processing solution. The strength, shape, or direction of the electric field in the processing solution may be modulated by charging and discharging the capacitive element in a controlled manner. Because the electric field is modulated with out passing a current from the capacitive element to the processing solution, electrochemical reactions do not occur on the interface of the capacitive element and the processing solution, thus, reduces complications caused by unwanted electrochemical reactions.

Abstract: An electrolysis device to separate water into its more economically valuable constituent hydrogen and oxygen gases. A neutral plate is interleaved between every magnetically charged electrode in an electrode stack to provide a means of spark suppression, a physical barrier between the hydrogen gas created at the cathode and oxygen gas created at the cathode, and to reduce deterioration of electrode surfaces caused by alternating polarity from an anode state to a cathode state. Scale of electrolysis cell electrodes are partially cleaned through a cycling of system polarity through a neutral electrode period. A means is provided to isolate and segregate dissociated hydrogen and oxygen gas.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract: A method and apparatus for plating a metal onto a substrate. One embodiment of the present invention provides an apparatus for electroplating a substrate. The apparatus comprises a fluid basin, an anode disposed near a bottom of the fluid basin, a restrictor disposed above the anode, and a substrate support member configured to move the substrate within the fluid basin among different elevations relative to the restrictor. Plating profiles on the substrate may be adjusted by changing the elevation of the substrate during plating.

Abstract: A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An electrolytic apparatus for an oxide electrolytic method includes an interior of an electrolytic vessel, a common cathode and two types of anodes different in shape and arrangement, a first electrolysis controller is connected between the cathode and the first anode, and a second electrolysis controller is connected between the cathode and the second anode. The electrolytic processing of the substance in the electrolytic vessel is carried out such that a pair of the cathode and one of the anodes is used for main electrolysis and a pair of the cathode and the other anode is used for auxiliary electrolysis. By this apparatus, prevention of the ununiform distribution of the electrodeposit, improvement of the processing speed and improvement of the durability of the crucible are achieved, whereby the recycling of spent nuclear fuels based on the nonaqueous reprocessing method is made feasible in a commercial scale.

Abstract: An electrolysis system (100) is provided. In addition to an electrolysis tank (101) and a membrane (105) separating the tank into two regions, the system includes at least one pair of low voltage electrodes (115/117) of a first type comprised of a first material, at least one pair of low voltage electrodes (117/118) of a second type comprised of a second material different from the first material, and at least one pair of high voltage electrodes (121/122) comprised of a material that may be the same as either the first or second material or different from both the first and second material. The low voltage applied to the low voltage electrodes and the high voltage applied to the high voltage electrodes is pulsed with the pulses occurring simultaneously with the same pulse duration.

Abstract: Chambers, systems, and methods for electrochemically processing microfeature workpieces are disclosed herein. In one embodiment, an electrochemical deposition chamber includes a processing unit having a first flow system configured to convey a flow of a first processing fluid to a microfeature workpiece. The chamber further includes an electrode unit having an electrode and a second flow system configured to convey a flow of a second processing fluid at least proximate to the electrode. The chamber further includes a nonporous barrier between the processing unit and the electrode unit to separate the first and second processing fluids. The nonporous barrier is configured to allow cations or anions to flow through the barrier between the first and second processing fluids.

Abstract: The invention relates to a method for processing at least two workpieces by means of electrochemical treatment. During the method, the workpieces are provided as working electrodes in an electrolytic treatment solution inside of which a counter-electrode arrangement is assigned to each workpiece. One workpiece and the assigned counter-electrode arrangement form an electrolytic processing element. The electrolytic processing elements are connected in series.

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process.

Abstract: A plating apparatus for plating a substrate comprises a power supply for generating a voltage between a pair of terminals; an anode connected to one terminal of the power supply; a main cathode connected to the other terminal of the power supply while in contact with the substrate; an auxiliary cathode connected to the other terminal of the power supply while out of contact with the substrate; a main resistance R1 connected in series between the other terminal of the power supply and the main cathode; and an auxiliary resistance R2 connected in series between the other terminal of the power supply and the auxiliary cathode.

Abstract: A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus included a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed to the seal member such that at least part of the auxiliary cathode expose on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.

Abstract: An electrolyzing device is capable of removing scales adhered to a cathode in an electrolyzing mode without deteriorating an electrode forming an anode. An electrolyzing device includes a first main electrode 3, a second main electrode 4, an auxiliary electrode 5, and control means C for controlling current supply to the electrodes, the control means C includes an electrolyzing mode in which treated water is electrochemically treated by using the first main electrode 3 as an anode and the second main electrode 4 as a cathode, a scale removal mode of the second main electrode in which scales adhered to the second main electrode 4 are removed by using the second main electrode 4 as the anode and the auxiliary electrode 5 as the cathode, and a scale removal mode of the auxiliary electrode in which scales adhered to the auxiliary electrode 5 are removed by using the auxiliary electrode 5 as the anode and the second main electrode 4 as the cathode.

Abstract: To avoid voids in the metal layer in holes of printed circuit boards, a conveyorized plating line and a method for electrolytically metal plated printed circuit boards are proposed which provide measures for reducing an electric voltage that builds up between adjacent printed circuit boards being conveyed through the line.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: An electrolytic processing apparatus (50) has feed electrodes (74) to feed a current to a substrate (W), an ion exchanger (76) brought into contact with the substrate (W), and process electrodes (72) to perform an electrolytic process on the substrate (W). The electrolytic processing apparatus (50) has an electrolytic processing liquid source to supply an electrolytic processing liquid between the substrate (W) and the ion exchanger (76), and a regeneration liquid supply source to supply a regeneration liquid to a regeneration liquid chambers (90a, 90b). The electrolytic processing apparatus (50) includes regeneration electrodes (84) spaced from the process electrodes (72). The feed electrode (74) has a potential higher than the process electrode (72) and the same polarity as the process electrode (72). The process electrode (72) has a potential higher than the regeneration electrode (84).

Abstract: A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

Abstract: An electroplating tool for providing a metal or metal film on a semiconductor wafer during processing thereof has a wafer chucking mechanism with a conductor or conductors associated therewith. The conductor(s) are electrically connected to a controller that applies a voltage or current applied thereto for altering the position of and/or varying the intensity of electromagnetic field lines originating from a source anode of the electroplating tool. The electromagnetic field lines originating from the source anode direct the deposition of metal from the electroplating solution to the semiconductor wafer. The conductor(s) of the wafer chucking mechanism improve and/or modulate the electromagnetic field lines of the electroplating process. This provides greater control of metal deposition during the electroplating process such that uniformity of the metal (e.g. copper) is provided across the semiconductor wafer.

Abstract: An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Abstract: A method for detecting the presence of target molecules bound to a working electrode in a first location. The first location is coated with a detection solution containing labeling molecules that include a first charge-separation moiety attached to a first molecule that binds to the target molecule. The first charge-separation moiety includes a material that generates hole-electron pairs in response to being illuminated by light in a first band of wavelengths. After removing any unbound labeling, the working electrode is immersed in a solution containing a compound that is oxidized by the generated holes. The first location is then selectively illuminated with light in the first band; and the change in the current and/or potential is measured between the working electrode and a reference electrode in contact with the solution. The first charge-separation moiety is preferably constructed from particles of a semiconducting material such as TiO2.

Abstract: A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode.

Abstract: The basic principles of the method for heavy metals electroextraction from technological solutions and wastewater includes pretreating to remove Chromium-6 and high concentrations of heavy metals and periodically treating in a six-electrode bipolar cylindrical electroreactor made of non-conducting material to achieve lower accepted levels of impurities. Six cylindrical steel electrodes form two triode stacks and are fed with three-phase alternating current of commercial frequency (50-60 Hz), which can be pulsed. Each phase of the three-phase current is connected to three electrodes of one triode stack or in parallel to two triode stacks. The parallel connection of three-phase current to two triode stacks is performed so that the same phase of the three phase current is connected in parallel with each two opposite electrodes of six electrodes located along the periphery, or with two adjacent electrodes. A bipolar stationary aluminum electrode is situated in the inter-electrode space.

Abstract: In order to make plating thickness uniform in a metal plating apparatus, a metal plating apparatus capable of performing metal plating to a uniform thickness is provided by aligning lines of electric force uniformly and in parallel by disposing a pair of conductive perforated plates 20a and 20b, which are electrically connected to each other, between plating metals 16 immersed in a plating solution and an object 18 to be plated.

Abstract: An electrolytic copper foil is electrodeposited onto the cathodic drum surface of a rotating cathode drum by feeding an electrolytic solution between the cathode drum and an anode facing each other and applying direct current between them, while the initial formation of the crystal nuclei of the electrolytic copper foil is performed by providing an auxiliary anode, an electrolytic solution receiver and a flashboard above the anode and applying an electric current between the cathode drum and the auxiliary anode and feeding an electrolytic solution separately onto the cathodic drum surface from an electrolytic solution feeder placed near the auxiliary anode and discharging it through the gap between the cathodic drum surface and the edge of the electrolytic solution receiver, keeping an electrolytic solution holdup between the cathodic drum surface and the auxiliary anode by the electrolytic solution receiver and the flashboard.

Abstract: An electrode assembly arrangement for improving an electrodeposition process and method for using the same the electrode assembly arrangement including a first electrode assembly and a second electrode assembly positioned to carry a metal containing electrolyte from the first electrode assembly to the second electrode assembly for deposition of the metal upon applying an electrical potential therebetween; at least one additional electrode assembly including a means for selectively applying an electrical potential thereto the at least one additional electrode assembly positioned to attract an electrolyte flow upon applying an electrical potential between the at least one additional electrode assembly and the second electrode assembly.

Abstract: Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

Abstract: A method of electroplating an object to be plated attached to a lower portion of a plating bath constituted by draining used plating solution and supplying new plating solution at every plating procedure. The method has a step of supplying additional current so that the object to be plated always has cathode potential, while the object to be plated is being dipped in the plating bath and electroplating is not carried out.

Abstract: The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface.