Abstract: A method of forming fine patterns includes forming an upper mask layer on a substrate, forming preliminary mask patterns on the upper mask layer, and forming upper mask patterns by etching the upper mask layer using the preliminary mask patterns as etch masks. Forming the upper mask patterns includes etching the upper mask layer by performing an etching process using an ion beam. The upper mask patterns include a first upper mask pattern formed under each of the preliminary mask patterns, and a second upper mask pattern formed between the preliminary mask patterns in a plan view and spaced apart from the first upper mask pattern.

Abstract: An electroplating apparatus has a vessel for holding electrolyte. A head has a rotor including a contact ring for holding a wafer having a notch. The contact ring includes a perimeter voltage ring having perimeter contact fingers for contacting the wafer around the perimeter of the wafer, except at the notch. The contact ring also has a notch contact segment having one or more notch contact fingers for contacting the wafer at the notch. The perimeter voltage ring is insulated from the notch contact segment. A negative voltage source is connected to the perimeter voltage ring, and a positive voltage source connected to the notch contact segment. The positive voltage applied at the notch reduces the current crowding effect at the notch. The wafer is plated with a film having more uniform thickness.

Abstract: A semiconductor substrate carrier for use during wet chemical processing may comprise a conductive flange to couple the carrier with processing equipment, a frame coupled with the conductive flange, where the frame is configured to hold a semiconductor substrate, and an integrated shield coupled with the frame. The integrated shield is configured to alter an electric field near at least a portion of a surface of the semiconductor substrate during the wet chemical processing.

Abstract: The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Abstract: The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Abstract: The invention relates to a tube target (50) for sputtering, with a target (46) disposed on a cylindrical carrier tube. This target (46) is divided into several segments. The target (46) includes at least one groove (51-54) extending obliquely with respect to its rotational axis.

Abstract: A wafer carrier is described. In one embodiment, the wafer carrier includes a variable aperture shield. The wafer carrier may include an electrically conductive wafer plating jig base having a plurality of concentric overlapping cavities of different depths, each cavity configured to receive a semiconductor wafer of a different size, a plurality of concentric magnetic attractors, at least one positioned within each of the plurality of overlapping cavities, and a cover plate comprising an open center surrounded by a support, the cover plate comprising an attractive material positioned within the support adjacent to the open center and aligned with at least one of the magnetic attractors when the cover plate is positioned over the wafer plating jig base.

Abstract: A plating fixture that affords improved control and process repeatability of the placement of material on a surface of a terminal lead is described. The thereby plated terminal lead is further incorporatable into an electrochemical cell. The plating fixture consists of a membrane that prevents migration of the electroplating chemicals along areas of the lead that are not desired. Furthermore, the fixture utilizes a setup plate that controls the length of the lead that is plated.

Abstract: The invention relates to a coating mask (1) for electrolytically coating the piston ring groove (39) of a piston (38), which is made of an elastically deformable material and has openings (3 to 10) that are arranged axially and are distributed in a uniform manner over the periphery, into which rods (11 to 18) of an expansion device (19) can be introduced, the rods being arranged in a displaceable manner such that the expansion device (19) can increase the radial diameter of the coating mask (1) and also the inner opening (2) so that the piston (38) can be introduced into the inner opening (2). The radial diameter of the coating mask (1) is selected in such a manner that after the reduction of radial diameter of the coating mask (1) and the inner opening, the elastically tensed coating mask (1) presses sealing lips (44, 45) of the coating groove (37) against the piston (38), on both sides of the piston ring groove (39).

Abstract: A device, apparatus, and method for abrasive electrochemical finishing of an arc flange leaf pack are presented. The device includes: a concave support block having holes to receive securing members; removable first and second end blocks configured to seat at opposite ends of the concave support block; removable first and second face plates attached to opposite sides of the concave support block via the securing members; and a region of space between the removable first and second face plates, the removable first and second end blocks, and the concave support block.

Abstract: A wafer carrier is described. In one embodiment, the wafer carrier includes a variable aperture shield.

Abstract: An electrode mask for electrowinning a metal is provided. An example technique forms openings in a solid nonconductive sheet, such as vinyl, polyvinyl chloride (PVC), or other plastic and adheres the sheet as a solid to a cathode surface as a mask. The mask protects the cathode surface from electrical interaction with an electrolyte, while the openings allow controlled electrodeposition of a metal in harvestable rounds, which can be stripped from the cathode. The electrode mask is reusable, and easily removed for recycling and replacement. A matrix design engine calculates pattern and sizes for the openings in the mask to optimize electrodeposition of the metal based on multiple parameters including the metal to be deposited, ions present in an electrolyte, electrolyte concentration, pH level, voltage, electrical current density, solution temperature, electrode temperature, or plating time.

Abstract: A polishing pad for an electrochemical planarization tool comprises a patterned surface that forms appropriate electrolyte flow channels for directing an electrolyte from the center to the periphery thereof. Consequently, a continuous electrolyte flow may be established, thereby significantly reducing the accumulation of contaminants in the polishing pad, thereby contributing to enhanced process uniformity so that frequent rinsing of the polishing pad and replacement of the electrolyte solution may be avoided.

Abstract: Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom.

Abstract: Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.

Abstract: Disclosed in this specification is selectively plated lead frame assembly and a method for the production thereof. A nickel-plated substrate is selectively masked to protect the bottom surface and a central portion of the top surface of the substrate. Gold is then plated on the unmasked portions. A preformed solder ring is soldered to the exposed gold.

Abstract: A method of fluid sealing a workpiece is provided. The method includes providing a force to cause a ring to form a barrier to fluid entry with the workpiece and preventing fluid from crossing the barrier to fluid entry by forming a pressure differential across the barrier.

Abstract: Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

Abstract: A semiconductor substrate carrier for use during wet chemical processing may comprise a conductive flange to couple the carrier with processing equipment, a frame coupled with the conductive flange, where the frame is configured to hold a semiconductor substrate, and an integrated shield coupled with the frame. The integrated shield is configured to alter an electric field near at least a portion of a surface of the semiconductor substrate during the wet chemical processing.

Abstract: According to one embodiment, patterns of protrusions and recesses includes a substrate including a conductive region on at least one major surface, and a projecting pattern layer formed on the conductive region on the major surface, and made of a microcrystalline material, a polycrystalline material, an amorphous material, or an oxide of the microcrystalline, polycrystalline, or amorphous material.

Abstract: Permanent or temporary alignment and/or retention structures for receiving multiple components are provided. The structures are preferably formed monolithically via a plurality of deposition operations (e.g. electrodeposition operations). The structures typically include two or more positioning fixtures that control or aid in the positioning of components relative to one another, such features may include (1) positioning guides or stops that fix or at least partially limit the positioning of components in one or more orientations or directions, (2) retention elements that hold positioned components in desired orientations or locations, and/or (3) positioning and/or retention elements that receive and hold adjustment modules into which components can be fixed and which in turn can be used for fine adjustments of position and/or orientation of the components.

Abstract: A polishing pad for an electrochemical planarization tool comprises a patterned surface that forms appropriate electrolyte flow channels for directing an electrolyte from the center to the periphery thereof. Consequently, a continuous electrolyte flow may be established, thereby significantly reducing the accumulation of contaminants in the polishing pad, thereby contributing to enhanced process uniformity so that frequent rinsing of the polishing pad and replacement of the electrolyte solution may be avoided.

Abstract: Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.

Abstract: A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.

Abstract: Systems and methods for preparing electrocatalysts are disclosed. The system includes a high temperature synthesis device for preparing an array of electrocatalysts as electrolytic surfaces of working electrodes. At least a portion of the electrolytic surfaces are defined by different materials. The device includes a plurality of openings for receiving the array of working electrodes and a mask having a plurality of openings configured for exposing at least a portion of each of the working electrodes for forming the electrolytic surfaces thereon.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: An apparatus and process is disclosed for the electrolytic removal of metal from a device, such as a medical device. More particularly, the apparatus of the invention includes a mandrel having slots or openings therein to expose portions of a metallic device, such as a stent, to an electrolytic solution to remove metal from the exposed portion.

Abstract: The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.

Abstract: A two dimensional vernier is provided along with a method of fabrication. The two dimensional vernier has a reference array patterned into a substrate, or a material overlying the substrate. An active array is patterned into photoresist overlying the substrate or the material. Both the reference array and the active array each comprise a two dimensional array of shapes. A difference between a combination of size or spacing of the shapes in each array determines vernier resolution. Vernier range is determined by a combination of vernier resolution and an integer related to a total number of shapes along a given axis. The two dimensional vernier allows an operator to readily measure the misalignment of a pattern to be processed relative to a previous pattern in two dimensions using a microscope. The two dimensional vernier reduces, or eliminates, repositioning of the microscope to determine both x-axis misalignment and y-axis misalignment.

Abstract: An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

Abstract: A hard material layer deposited on a hard metal work piece is removed by electrolytic passivation in which a maximum current density equal to at least 0.01 A/cm2 is generated on the work piece at the beginning of the layer removal process. The hard material layer rapidly flakes off without causing substantial damage to the hard metal material located underneath.

Abstract: A system for depositing materials on a surface of a wafer or removing materials from the surface of a wafer includes an electrode, a shaping plate, a liquid solution contained between the electrode and the wafer surface, and electrical contact members contacting selected locations on the wafer surface. The shaping plate is supported between the electrode and the wafer surface such that an upper surface of the shaping plate faces the wafer surface. The shaping plate can have a plurality of channels where each puts the wafer surface in a fluid communication with the electrode. The electrical contact members contact the selected locations on the wafer surface through a recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential. Advantages of the invention include substantially full surface treatment of the wafer.

Abstract: An electroplating method includes forming a layer, the forming of the layer includes: a) contacting a substrate with a first article, the first article includes a support and a conformable mask disposed in a pattern on the support; b) electroplating a first metal from a source of metal ions onto the substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the substrate. The method may further involve one or more of (1) selectively depositing or non-selectively depositing one or more additional materials to complete formation of the layer, (2) planarizing deposited material after each deposition or after all depositions for a layer, and/or (3) forming layers adjacent previously formed layers to build up a structure from a plurality of adhered layers. Electroplating articles and electroplating apparatus are also disclosed.

Abstract: A method and apparatus for fluid sealing the underside of a workpiece, such as a semiconductor wafer and the like, during wet-processing such as electrodeposition and the like, employing an elastomeric encased ring of flexible fingers against which the periphery of the workpiece underside is forced to deflect the fingers downwardly and engage a peripheral sealing bead against the underside periphery of the workpiece; and where electrical contact with the workpiece is desired, resiliently engaging electrical contact tips protruding through peripheral openings in the elastomeric covering within the sealing ring, with the underside periphery of the workpiece.

Abstract: A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.

Abstract: A method and apparatus for fluid sealing the underside of a workpiece, such as a semiconductor wafer and the like, during wet-processing such as electrodeposition and the like, employing an elastomeric encased ring of flexible fingers against which the periphery of the workpiece underside is forced to deflect the fingers downwardly and engage a peripheral sealing bead against the underside periphery of the workpiece; and where electrical contact with the workpiece is desired, resiliently engaging electrical contact tips protruding through peripheral openings in the elastomeric covering within the sealing ring, with the underside periphery of the workpiece.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

Abstract: A contact ring applies electroplating to a substrate having an electrically conductive portion. The contact ring comprises an annular insulative body, a conductive biasing member, and a seal member. The annular insulative body defines a central opening. The conductive biasing member is configured to exert a biasing force upon the substrate.

Abstract: A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath using a device which holds the substrate to be plated in spaced relation to an inhibitor electrode of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp ring which clamp ring has a through opening which overlies the inhibitor electrode. A cathode structure overlies the clamp ring and the cathode structure, substrate and clamp ring are secured to the device by a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so plating occurs on the surface of the inhibitor electrode. The substrate holding apparatus comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate overlies the inhibitor electrode and a cathode structure is secured against the plate member.

Abstract: A method for preventing the deposition of material in an opening near a surface of an article, and a masking insert therefore. The method and insert are particularly suited for preventing the plating of a metal, such as platinum, on turbine airfoils or turbine blades and vanes having a complex geometry, as is the case when cast trailing edge cooling slots are present in the airfoil surface. The method entails the use of the masking insert, which is precisely configured to mask the cooling slots during plating by preventing circulation of the plating bath through the slots. For this purpose, the insert is equipped with appendages that are sized, shaped, spaced and oriented on a base member to register with, and preferably be received within, the cooling slots of an airfoil having a particular cooling slot design.

Abstract: The present invention is directed to an apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.