Abstract: A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile.

Abstract: An enhanced DC plasma processing system which acts to immediately stop current from flowing through the plasma allows a variety of alternative embodiments for varying applications. In one embodiment, a tapped inductor is switched to ground to achieve substantial voltage reversal of about 10% upon detection of an arc condition through voltage and/or rate of voltage change techniques. This reversal of voltage is maintained long enough to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically applying a reverse voltage is effected through a timer system in the power supply.

Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.

Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.

Abstract: A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target to form a population of neutral chemically reactive molecular fragments, atoms or radicals at least some of which scatter away from the surface of the target and into the chamber.

Abstract: An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired.

Abstract: A method and apparatus for vacuum coating plural articles employs a drum work holder configuration and a sputter source with a plurality of individually controlled anodes for effectively providing uniform coatings on articles disposed at different locations on the drum work holder. A small number of measured process parameters are used to control a small number of process variable to improve coating uniformity from batch to batch.

Abstract: The invention encompasses a method of forming a sputtering target. A wear profile for a sputtering target surface is determined. The wear profile corresponds to a shape of the used target surface after the target is subjected to the wear of having material sputtered therefrom. The wear profile is divided amongst a plurality of datapoints across the target surface. A difference in height of the target surface after the wear relative to a height of the target surface prior to the wear is calculated. The difference in height calculations generate a plurality of wear definition datapoints. Target lifetime datapoints are calculated using the wear definition datapoints, and sputtering uniformity datapoints are also calculated using the wear definition datapoints. A difference between the target lifetime datapoints and sputtering uniformity datapoints is calculated.

Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.

Abstract: A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: Sputtering method and apparatus for depositing a coating onto substrate employs variable magnetic field arranged in vicinity of a cathode within a working chamber, filled with ionizable fluid. By controlling a magnetic field topology, i.e. orientation and value of magnetic strength with respect to cathode there is enabled localization and shifting of plasma away from substrate and by thus improvement of adhesion and properties of deposited coatings.

Abstract: The presence of biological contaminants in a liquid coating composition is determined by measuring the carbon dioxide content of the atmosphere above the liquid and comparing the measured carbon dioxide level to a baseline carbon dioxide level. A biocide can be added to the liquid when the measured carbon dioxide level reaches a predetermined value to control the level of biological contaminants in the liquid coating composition.

Abstract: A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement.

Abstract: A vacuum chamber deposits thin films on a substrate by sputtering a target. The beam of atoms or ions from the target is partially blocked by a shadow or adjustable uniformity mask, reducing the deposition rate onto the substrate. The adjustable uniformity mask has several adjustable fingers. The fingers extend or retract to enlarge or reduce the size of the mask. Each finger covers a different annular region or radius of the substrate. The deposition rate at different substrate radii is thus adjustable by the fingers. Several optical beams monitor the film transmittance at different substrate radii. A transmittance profile is continually generated during deposition. As deposition proceeds, radii with a thicker film have their fingers extended to reduce their deposition rate, producing a more uniform film thickness across all radii. Motors extend or retract the individual fingers.

Abstract: In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

Abstract: In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

Abstract: A physical vapor deposition apparatus is provided with at least one workpiece processing chamber and a programmable control device for controlling process variables within the processing chamber. The control device is programmed to vary the power to an aluminum sputtering target during deposition of aluminum layers. By controlling the applied power, the rate of deposition of the aluminum is varied in a manner which reduces or avoids the creation of voids during the filling of high aspect ratio features.

Abstract: The invention includes an apparatus and method for determining the pass through flux of magnetic materials. The apparatus comprises one or more magnetic field sensors arranged in such a way as to collect field strength data in any or all the x, y, z directions. The apparatus also comprises a magnet field source or arrangement of magnet field sources which are placed beneath the material being characterized and includes a mechanism whereby the magnetic material can be mapped by the movement of any one or combination of: magnetic field source or sources, sensors and magnetic material. The invented method comprises the use of various configurations of magnetic sources in order to generate a magnetic field that emulates the open-loop condition found in magnetron sputtering.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: A grid protects a manometer diaphragm from plasma. A plasma chamber is used to generate a plasma. A manometer is used to measure the pressure in the plasma chamber. A grounded electrically conductive grid is used to screen out ions in the plasma before they reach a diaphragm in the manometer. The grid may be formed in a centering ring. A pipe may be used to connect the manometer to the plasma chamber. The centering ring may be placed in the joint in the pipe, with the centering ring and grid being grounded to the pipe.

Abstract: DC plasma power supply for a sputter deposition of material layers on a substrate includes a plasma controller and a plasma input for the settings of the output voltage and output current providing plasma ignition and termination with no arcing and no striking voltage. Pre-defined voltages are applied in the vacuum state before sputtering and after sputtering until vacuum is restored in a sputtering apparatus.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).

Abstract: A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Abstract: A sputter deposition apparatus for depositing a film onto a substrate includes a surrogate rotating magnetron includes an internal magnet and a wall thickness that permits a fringe magnetic field to support an electron cyclotron resonance. Auxiliary coating sources are modulated for depositing a desired sequence of material onto the substrate.

Abstract: A system and method for controlling a circumferential deposition thickness distribution on a substrate includes a motor that rotates the substrate and a position sensor that senses a position of the substrate. At least one deposition thickness sensor senses the deposition thickness of the substrate at multiple positions on a circumference of a circle centered about an axis of rotation of the substrate. At least one controller drives a vapor source used to emit material for a deposition on a substrate. The at least one controller is coupled to the position sensor and the deposition thickness sensor. The controller synchronously varies an emission rate of material from the vapor source with respect to the position of the substrate to control the circumferential deposition thickness distribution.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate.

Abstract: A sputtering station for a disk-shaped workpiece includes one loadlock chamber, one sputtering source with a sputtering surface, a transport chamber with two workpiece handling openings, one communicating with the loadlock chamber and the other with the sputtering source. A transport device in the transport chamber has two workpiece carrier arms extending radially with respect to a rotation axis of the device. Each arm can extend and retract radially and carries a workpiece holder. The two openings of the transport chamber are radially opposite each other with respect to the axis of rotation so that the workpiece holders of the two arms may be swung toward each of the openings and about an arc of 180°.

Abstract: The present invention is such that, in a circuit for preventing an arc discharge through the application of a reverse voltage pulse, in the case where, after the application of the reverse voltage pulse has been ended, the generation of an arc discharge is detected by an arc discharge detecting means (23), a reverse voltage generated by a reverse voltage generating means (12) is applied within 1 to 10 &mgr;s to a sputtering source to lower the probability of generating a continuous arc discharge and, through a diode (D10) connected in series with the sputtering source (14) and a resistor (r10) connected in parallel with the diode (D10), a current at a time of applying the reverse voltage is restricted, thus lowering a continuous arc discharge resulting from the reverse arc discharge.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: A method and apparatus for detecting the presence of a plasma. The apparatus comprises an electrically floating contact member that is exposed to a plasma forming region, for example, a semiconductor wafer processing chamber. The floating contact is coupled to a measuring device. When a plasma is present in the plasma forming region, the plasma induces a voltage upon the floating contact which is detected by the measuring device.

Abstract: A system and method for controlling a deposition thickness distribution on a substrate includes a motor that rotates the substrate and at least one deposition thickness sensor that senses the deposition thickness on the rotating substrate at two or more radii. At least one actuator varies a shadow of a mask that is disposed over the rotating substrate, wherein the shadow has a surface area that is less than an unmasked surface area of the rotating substrate. A vapor source deposits material on the rotating substrate. A process controller is coupled to the thickness deposition sensor and the at least one actuator. In response to an output of the deposition thickness sensor, the process controller varies the shadow of the mask along a radius of the substrate to control the deposition thickness distribution.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

Abstract: A cathode assembly includes a monolithic target having a first surface and a center region. In addition, a sculpted section is formed in the first surface, and the sculpted section is generally recessed from the first surface and extends around the center in a racetrack configuration. The racetrack has a concentric centerline, and the sculpted section preferably is generally symmetric about the centerline. A magnetic field generator is disposed adjacent to the target and produces a magnetic field having an in-plane component. The magnetic field generator is tuned so that a distribution of the magnitude of the in-plane component in a direction transverse to the centerline at a point along the racetrack is characterized by two peaks that have a generally equal magnitude.

Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: A sputter deposition chamber may be fitted with measures to prevent or reduce electrical noise that might otherwise interfere with a controller for the sputter deposition chamber. A grounded shield plate may be coupled to an insulating member by which a sputtering target is mounted in the chamber. A ground line, separate from a power supply line, may be coupled to the chamber's enclosure wall and to a varying power supply. One or more filters may be coupled in series between chamber components and a controller associated with the chamber.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp3/Sp2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 &mgr;m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

Abstract: A high-temperature balance includes a piezoelectric material, such as langasite, that is stable at high temperatures. The frequency response of the balance is monitored to determine the change in mass of material deposited on the balance in a high-temperature environment. Accordingly, the balance can be used to monitor high-temperature deposition rates or to perform thermogravimetric analysis. The high-temperature balance of this invention can further be operated as a nanobalance to measure monolayer changes in film thickness.

Abstract: A thin film plasma processing system which includes multiple power environments and circuitry is described so as to encompass a variety of configurations. The environments may establish an energy quantum which may be interactively adjusted such as for conditioning or processing when new targets or materials are inserted. The energy quantum can be increased from the traditionally low energy storage of a switch-mode power supply to a higher energy to allow more intense arc occurrences and, thus, the more rapid conditioning of a target. Switching between environments can be achieved manually or automatically through timing or through arc or plasma electrical characteristics sensing. Energy quantum may be adjusted through the inclusion of energy storage elements, hardwired elements, or through software configurations such as are possible with the utilization of a programmable processor. Applications for DC switch-mode thin film processing systems are specifically shown.

Abstract: Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

Abstract: A sputter coating apparatus includes at least a first sputter coating line and a second sputter coating line. The first and second sputter coating lines may be operated in parallel with one another in certain embodiments in order to independently form coating systems and respective coated articles. However, the two coating lines may also be utilized so as to operate in series with one another to form a coated article. In the latter case, a transition zone is provided between an end of the first line and an end of the second line so as to selectively couple an output of the first line to an input of the second line when it is desired to utilize the two sputter coating lines in series with one another. In such a manner, it is possible to avoid many of the inefficiencies associated with conventional sputter coating apparatuses and processes.

Abstract: The invention relates to a PVD coating method and to a PVD coating device with a chamber in which at least one target cathode, at least one anode and at least one substrate holder which is intended to hold at least one substrate are arranged, and with a control device which delivers a first voltage in order to supply the target cathode with a negative electrical potential relative to the anode in order to form a plasma in which the substrate is arranged, and which delivers a second voltage in order to supply the anode with a positive electrical potential relative to the chamber wall. In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties. It is increased according to the invention in that the control device delivers a third voltage which supplies the substrate with an electrical potential that is more negative than the potential of the anode.

Abstract: The present invention is characterized by; detecting the volume of impurities in said vacuum vessel wherein plasma is generated by radio frequency power supplied to the target electrode and substrate electrode, and a target is sputtered by ions in said plasma, thereby forming films on the substrate, and controlling the phase difference of radio frequency power supplied to each of said electrodes according to said detection value.

Abstract: A method of coating a substrate by magnetron cathode sputtering includes a sputtering cathode having pole shoes and being arranged in a vacuum chamber. A target and a magnetic field are provided in an area of the surface of the target and the magnetic field is varied stepwise and/or continuously to displace the plasma radially such that the erosion groove is likewise displaced radially. The variable magnetic field is generated by coils between the back surface of the target and a yoke plate while a static magnetic field is gernated by an annularly arranged magnet in the area of the yoke plate and a target space between the target and the substrate is shielded by means of an iron core which also increases the field strength of the variable magnetic field.