Coating, Forming Or Etching By Sputtering Patents (Class 204/298.01)
  • Patent number: 9624570
    Abstract: The present invention relates to a filtered cathodic-arc ion source that reduces, or even eliminates, macroparticles while minimally compromising the compact size, simplicity, and high flux ion production benefits of unfiltered cathodic-arc sources. Magnetic and electrostatic forces are implemented in a compact way to guide ions along curved trajectories between the cathode source and the workpiece area such that macroparticles, which are minimally affected by these forces and travel in straight lines, are inhibited from reaching the workpieces. The present invention implements this filtering technique in a device that is compact, symmetrical and easy to manufacture and operate and which does not substantially compromise coating deposition rate, area, or uniformity.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: April 18, 2017
    Assignee: FLUXION INC.
    Inventor: Paul Erik Sathrum
  • Patent number: 9322094
    Abstract: The present invention provides a film forming apparatus configured such that the occurrence of contamination is reduced between targets. The film forming apparatus includes: a plurality of target electrodes respectively having attachment surfaces to which targets can be attached; a substrate holder for holding a substrate at a position opposing the plurality of target electrodes; a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that can oppose the attachment surfaces; and a shield member disposed adjacent to the first shutter member and having a number of openings equal to the number of the target electrodes, wherein a gap between the first shutter member and the shield member widens toward an outer perimeter from a portion where adjacent target electrodes are closest.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: April 26, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yuji Kajihara, Yasushi Yasumatsu, Kazuya Konaga
  • Patent number: 9252002
    Abstract: Shutter disk assemblies for use in process chambers to protect a substrate support disposed below the shutter disk assembly from undesired material deposition are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber to protect a substrate support disposed below the shutter disk assembly may include an upper disk member having a top surface and a bottom surface; and a lower carrier member having at least a portion of the lower carrier member disposed below a portion of the upper disk member to support the upper disk member and to create a protective overlap region that prevents exposure of the substrate support upon deformation of the upper disk member.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: February 2, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Cheng-Hsiung Matthew Tsai, Ananthkrishna Jupudi, Robert Dinsmore, Song-Moon Suh
  • Patent number: 9017526
    Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: April 28, 2015
    Assignee: Lam Research Corporation
    Inventors: Harmeet Singh, Alex Paterson
  • Patent number: 8999208
    Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: April 7, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masayuki Itose, Mami Nishimura, Masashi Kasami, Koki Yano
  • Patent number: 8980072
    Abstract: In a method in which two anodes are operated alternately opposite each other as plasma discharge anodes and as cathodes for self-cleaning, and the cathodes of the plasma discharge are recurrently briefly reversed in polarity, and an arrangement comprising a cathode and a first and a second anode supplied with voltage by an H-bridge circuit, pole reversal of cathode voltage is effected by a pulse current supply, at least one anode is maintained at positive potential at all times and the other anode intermittently at negative potential during an etching time, and the H-bridge circuit is operationally connected to the pulse current supply, such that at least one anode is at positive potential at all times.
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: March 17, 2015
    Assignee: VON ARDENNE Anlagentechnik GmbH
    Inventors: Goetz Teschner, Enno Mirring, Johannes Struempfel, Andreas Heisig
  • Patent number: 8956513
    Abstract: There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: February 17, 2015
    Assignee: Ulvac, Inc.
    Inventors: Shinya Nakamura, Yoshinori Fujii, Hideto Nagashima
  • Patent number: 8956516
    Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 17, 2015
    Assignee: Semicat, Inc.
    Inventors: Jin Hyun Kim, Michael Nam, Jae Yeol Park, Jonggu Park
  • Patent number: 8900465
    Abstract: Methods for reducing the surface roughness of magnetic media to be used in storage drives are described. One such method includes forming a recording media on a substrate, the recording media including at least one recording layer configured to store information magnetically, depositing a first layer of carbon on the recording media, the first carbon layer having a first average preselected thickness, etching the first carbon layer to have a second average preselected thickness less than the first average preselected thickness, depositing a second layer of carbon on the etched first carbon layer, the second carbon layer having a third average preselected thickness that is less than the first average preselected thickness, and implanting nitrogen in the second carbon layer.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: December 2, 2014
    Assignee: WD Media, LLC
    Inventors: Yang Yun, Xiaofeng Yao, Yi Chen, Paul C. Dorsey
  • Patent number: 8864959
    Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: October 21, 2014
    Assignee: Oerlikon Trading AG, Truebbach
    Inventors: Siegfried Krassnitzer, Oliver Gstoehl, Markus Esselbach
  • Patent number: 8852411
    Abstract: A sputtering apparatus includes a support assembly and posts. The support assembly includes an upper base, a lower base, seat members, and connection posts interconnected between the upper base and the lower base. The upper base defines cutouts. The seat members are rotatably mounted on the lower base and aligned with the cutouts. Each seat member includes a hollow receiving post, a support post moveably received in the receiving post, a lever bar pivotably connected to the receiving post, and a drive post, the drive post and the support post are coupled to opposite ends of the lever bar. Each seat member is rotatable about a longitudinal axis of the receiving post. The posts fix workpieces in place. Each post includes a rod body portion having a first end and an opposite second end, an engagement portion at the first end, and a protrusion extending from the second end.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: October 7, 2014
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Wei-Cheng Ling
  • Patent number: 8758579
    Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: June 24, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Reiner Hinterschuster, Lothar Lippert
  • Patent number: 8702918
    Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: April 22, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Alan Ritchie, Donny Young, Keith A. Miller, Muhammad Rasheed, Steve Sansoni, Uday Pai
  • Patent number: 8591709
    Abstract: A shield assembly for a sputter deposition chamber, the shield assembly including an outer sleeve with a gas inlet to conduct a gas through the outer sleeve and an inner sleeve disposed within the outer sleeve, the inner sleeve including gas channels on a surface mating with the outer sleeve to conduct the gas between the inner and outer sleeves. The shield assembly may further include an aperture ring adjacent to a first end of both the inner and outer sleeves, the aperture ring including a plurality of gas outlets to conduct the gas from the gas channels and an inner aperture flange extending from the plurality of gas outlets and adjacent to gas shield flange to form a gas runway for conducting the gas toward a sputter target located within the deposition chamber.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: November 26, 2013
    Assignee: WD Media, LLC
    Inventors: Chichoy Lim, Eang Keong Tan, Weng Aun Teh, Yi Chun Tan, Sheik Chian Lee
  • Patent number: 8568572
    Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.
    Type: Grant
    Filed: June 10, 2010
    Date of Patent: October 29, 2013
    Assignee: The Regents of the University of California
    Inventors: Andre Anders, Joakim Andersson
  • Patent number: 8512586
    Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
    Type: Grant
    Filed: September 1, 2011
    Date of Patent: August 20, 2013
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Christopher K. Olsen, Yan Shao, Ruairidh MacCrimmon
  • Patent number: 8506772
    Abstract: A sputtering apparatus includes a support assembly and posts. The support assembly includes an upper base, a lower base, seat members, and connection posts interconnected between the upper base and the lower base. The upper base defines cutouts. The seat members are rotatably mounted on the lower base and aligned with the cutouts. Each seat member includes a hollow receiving post, a support post moveably received in the receiving post, a lever bar is pivoted to the receiving post, and a drive post, the drive post and the support post are coupled to opposite ends of the lever bar. Each seat member is rotatable about a longitudinal axis of the receiving post. The posts fix workpieces. Each post includes a rod body portion having a first end and an opposite second end, an engagement portion at the first end, and a protrusion extending from the second end.
    Type: Grant
    Filed: October 17, 2010
    Date of Patent: August 13, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Wei-Cheng Ling
  • Patent number: 8499715
    Abstract: A coating apparatus includes a first coating device, a number of second coating devices and a number of substrate holders. Each of the substrate holders is rotatable relative to the first coating device and the second coating devices such that one of two opposite holding surfaces of the substrate holder alternately faces the first coating device and the second coating devices.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: August 6, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8383001
    Abstract: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: February 26, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Hiromasa Mochiki, Yoshinobu Ooya, Fumio Yamazaki, Toshio Haga
  • Patent number: 8357272
    Abstract: A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: January 22, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Tadashi Itoh, Masaaki Ashida, Hajime Ishihara, Takuya Iida
  • Patent number: 8262898
    Abstract: A flow-path pattern provided with plural flow paths along a facing direction of facing electrodes is placed on the facing electrodes, a carbon nanotube-dispersed solvent is guided to the flow paths to allow it to flow in one direction, and, after the solvent is dried, the flow-path pattern is peeled off the facing electrodes, thereby controlling the position of carbon nanotubes. The flow path pattern is made of a filmy material. The respective flow paths are formed in parallel to each other at constant intervals, and an interval M between adjacent facing electrodes and an interval N between adjacent flow paths have a constant relation between them. Liquid pools for the carbon nanotube-dispersed solvent are provided at ends of the flow path pattern to allow the liquid pools to communicate with the respective flow paths.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: September 11, 2012
    Inventor: Masanori Ashitomi
  • Publication number: 20120193217
    Abstract: A physical vapor deposition system includes a segmented post cathode having multiple post segments.
    Type: Application
    Filed: February 2, 2011
    Publication date: August 2, 2012
    Inventors: Brian S. Tryon, Russell A. Beers
  • Patent number: 8192596
    Abstract: Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less. Further provided is a method of subjecting copper to high purification. An anode and a cathode are partitioned with an anion exchange membrane, an anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed.
    Type: Grant
    Filed: January 5, 2005
    Date of Patent: June 5, 2012
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yuichiro Shindo, Kouichi Takemoto
  • Patent number: 8178471
    Abstract: There are provided hydrogen storage materials comprising a first region composed primarily of an amorphous carbon containing at least one metal element selected from the group consisting of Ti, Zr, Hf and Y, and a second region composed primarily of an amorphous carbon having a density lower than that of the first region.
    Type: Grant
    Filed: January 22, 2004
    Date of Patent: May 15, 2012
    Assignee: Japan Science and Technology Agency
    Inventor: Eiji Iwamura
  • Patent number: 8163144
    Abstract: The present invention relates to a magnetron sputtering device and technique for depositing materials onto a substrate at a high production rate in which the deposited films have predictive thickness distribution and in which the apparatus can operate continuously and repeatedly for very long periods. The present invention has realized increased production by reducing cycle time. Increased coating rates are achieved by coupling a planetary drive system with a large cathode. The cathode diameter is greater than the diameter of a planet and less than twice the diameter of the planet. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: April 24, 2012
    Inventors: Markus K. Tilsch, Richard I. Seddon, Georg J. Ockenfuss, Jeremy Hayes, Robert E. Klinger
  • Patent number: 8101049
    Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: January 24, 2012
    Assignee: Seagate Technology LLC
    Inventors: Jeffrey Shane Reiter, Steven Eric Barlow, Matthew James Cross
  • Patent number: 8092560
    Abstract: Since structural portions of a device made of a plurality of materials are different from one another in mechanical hardness, it is very difficult to uniformly lap the structural portions. This is attributable to generation of machining recessions due to differences in lapped amount when large fixed abrasive grains are used, and generation of lapping marks caused by that the dropped abrasive grains rotate. Accordingly, in order to cope with the disadvantage, it is essential to surely grip abrasive grains of small size to a surface of a surface plate.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: January 10, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Inaba, Hiromu Chiba, Xudong Yang, Shinji Sasaki, Nobuto Yasui
  • Patent number: 8092607
    Abstract: In a vacuum coating installation to coat planar substrates, comprising a vacuum chamber and a transport device arranged in the vacuum chamber for transporting the substrates along a transportation path through the vacuum chamber, with the transport device comprising a multitude of transport rollers arranged successively along the transportation path, each transport roller is adapted to be mounted at least at two different positions, vertically distanced from each other. A carrier frame has a substrate accepting structure and a guiding rod arranged at the bottom of the carrier frame in the direction of transportation to create a friction connection with the transportation device, connected to the carrier frame at the connection points, with the guiding rod being connected at least at one connection point to the carrier frame such that a relative displacement is possible of the guiding rod relative to the carrier frame in the direction of transportation.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: January 10, 2012
    Assignee: Von Ardenne Anlagentechnik GmbH
    Inventors: Gerd Pollack, Andrej Wolf, Matthias Klooss, Johannes Struempfel
  • Patent number: 8088259
    Abstract: A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
    Type: Grant
    Filed: January 7, 2009
    Date of Patent: January 3, 2012
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Hiroshi Gotoh, Toshihiro Kugimiya, Katsufumi Tomihisa
  • Patent number: 8061299
    Abstract: A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.
    Type: Grant
    Filed: February 17, 2005
    Date of Patent: November 22, 2011
    Inventor: George M. Engle
  • Patent number: 8053364
    Abstract: This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with metal oxide deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of a desired electrical property as a function of cathode voltage used during a sputtering process that uses a biased target. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials (e.g.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: November 8, 2011
    Assignee: Intermolecular, Inc.
    Inventors: Wayne French, Pragati Kumar, Prashant Phatak, Tony Chiang
  • Patent number: 7942111
    Abstract: A method is proposed for vacuum-coating a substrate using a plasma-CVD method. In order to control ion bombardment during the vacuum coating, a substrate voltage, produced independently from a coating plasma, is applied to the substrate. The substrate voltage is modified during the coating. The substrate voltage is a direct voltage that is pulsed in bipolar fashion with a frequency of 0.1 kHz to 10 MHz. A wear-resistant and friction-reducing multilayer structure of alternating hard material individual layers and carbon or silicon individual layers is proposed.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: May 17, 2011
    Assignee: Robert Bosch GmbH
    Inventors: Kurt Burger, Thomas Weber, Johannes Voigt, Susanne Lucas
  • Patent number: 7883632
    Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: February 8, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Honda, Yutaka Matsui, Manabu Sato
  • Patent number: 7879203
    Abstract: A method and apparatus for depositing a coating material on a surface of a substrate by an ion plasma deposition process using a hollow cathode is disclosed. The cathode may be a substantially cylindrical hollow cathode. A plasma arc is formed on the outer circumference of the cathode to remove coating material from the cathode, which is then deposited on a surface of a substrate. An internal arc drive magnet is contained within the hollow bore of the cathode and cooling is provided to the magnet during operation.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: February 1, 2011
    Assignee: General Electric Company
    Inventors: Scott Andrew Weaver, William Thomas Carter, Paul Mario Marruso
  • Patent number: 7871470
    Abstract: An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a yoke comprising a curved surface with a first slot formed therethrough, a base comprising a first surface adapted to support the substrate support and a curved second surface, wherein the curved second surface mates with the curved surface of the yoke and a first slot is formed through the curved second surface of the base, and a first threaded member disposed through the first slot in the yoke and the first slot in the base.
    Type: Grant
    Filed: June 26, 2006
    Date of Patent: January 18, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Eric W. Schieve, Keith K. Koai, David T. Or, Rene T. Correa
  • Patent number: 7862694
    Abstract: A composite coating device includes first to third processing chambers. The first processing chamber performs an ion beam etching as a pretreatment process in which an ion beam is irradiated on a surface of a magnetic head at a predetermined angle and the surface is removed for a predetermined depth. The second processing chamber performs a magnetron sputter deposition as a shock absorbing coating formation process in which a shock absorbing coating is formed on the pretreated surface. The third processing chamber performs an electron cyclotron resonance plasma chemical vapor epitaxy or a cathode arc discharge deposition as an overcoat formation process in which an overcoat is formed on the shock absorbing coating. A preparation chamber communicates with the first to third processing chambers through opening and closing devices for transferring the magnetic head.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: January 4, 2011
    Assignee: Shimadzu Corporation
    Inventors: Yoshiyuki Konishi, Masahiro Ueda, Masayasu Suzuki
  • Patent number: 7846310
    Abstract: A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: December 7, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Gillard, Anthony Vesci, Keith A. Miller
  • Patent number: 7763153
    Abstract: A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting H?/SiH* from 0.3 to 1.3 between an emission spectral intensity H? of hydrogen atom radicals at a wavelength of 656 nm and an emission spectral intensity SiH* of silane radicals at a wavelength of 414 nm in plasma emission, and chemical sputtering is effected on the silicon sputter target by the plasma to form a crystalline silicon thin film on the deposition target object. Thereafter a high-frequency power is applied to a terminally treating gas to generate plasma for terminating treatment and the surface of the crystalline silicon thin film is terminally treated by the plasma in the terminally treating chamber.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: July 27, 2010
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Eiji Takahashi, Hirokazu Kaki
  • Patent number: 7758699
    Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: July 20, 2010
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 7744735
    Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: June 29, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Rodney Lee Robison, Jacques Faguet, Bruce Gittleman, Tugrul Yasar, Frank Cerio, Jozef Brcka
  • Patent number: 7731825
    Abstract: A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10?3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: June 8, 2010
    Assignee: Canon Anelva Corporation
    Inventors: Toru Kitada, Naoki Watanabe, Shinji Takagi, Shinji Furukawa
  • Patent number: 7695599
    Abstract: A discharging power supply including a direct current power supply unit, a control unit for controlling an output of the direct current power supply unit, and a vibrating current generation unit having a capacitance connected in parallel with a pair of outputs from the direct current power supply unit and an inductance connected to at least one of the pair of outputs, wherein the control unit controls the direct current power supply unit so that current outputted from the direct current power supply unit does not exceed a limit current value in at least a portion of a range of voltage that can be outputted from the direct current power supply unit. Thus, regardless of whether the discharge power is set to be high or low, discharge current exceeding the limit characteristic line can be prevented from flowing.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: April 13, 2010
    Assignee: Shibaura Mechatronics Corporation
    Inventors: Noboru Kuriyama, Kazuhiko Imagawa
  • Patent number: 7691243
    Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: April 6, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Mirko Vukovic
  • Publication number: 20100078312
    Abstract: A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias.
    Type: Application
    Filed: September 26, 2008
    Publication date: April 1, 2010
    Applicant: Tango Systems, Inc.
    Inventors: Ravi Mullapudi, Biju Ninan, Gabriel A. Calebotta
  • Patent number: 7678198
    Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. Preferably, the coater includes at least one coating apparatus (e.g., which is adapted for delivering coating material) on each of two sides of the path of substrate travel.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: March 16, 2010
    Assignee: Cardinal CG Company
    Inventor: Klaus Hartig
  • Publication number: 20100059366
    Abstract: A method of fabricating a process chamber component having a textured surface with raised features. The method comprises providing a process chamber component having a surface, and forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough. A textured surface having raised features is formed on the process chamber component by propelling grit particles with a gas that is pressurized to a pressure sufficiently high to cause the grit particles to erode and remove material from the surface.
    Type: Application
    Filed: November 13, 2009
    Publication date: March 11, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Karl BRUECKNER, Brian WEST, Hong WANG
  • Patent number: 7674446
    Abstract: A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: March 9, 2010
    Assignee: Nippon Mining & Metals Co., Ltd
    Inventors: Shuichi Irumata, Ryo Suzuki
  • Patent number: 7674360
    Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: March 9, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Ilyoung Richard Hong, Donny Young, Michael Rosenstein, Robert B. Lowrance, Daniel C. Lubben, Michael Andrew Miller, Peijun Ding, Sreekrishnan Sankaranarayan, Goichi Yoshidome
  • Patent number: 7659197
    Abstract: Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves depositing a first portion of seed layer material, subsequently selectively resputtering the deposited seed layer material in the presence of exposed diffusion barrier material, and, depositing a second portion of the seed layer material. Resputtering operation improves seed layer coverage on the recessed feature sidewalls by redistributing seed layer material within the feature. Resputtering, however, sometimes exposes an underlying diffusion barrier material at the feature bottom and at the top corners of the feature. In order to prevent inadvertent removal of diffusion barrier layer, resputtering is performed under conditions that allow etching of the seed layer material at a rate which is at least five times greater than the etching rate of a diffusion barrier material. Selective resputtering is performed by impinging on the wafer substrate with low-energy argon and/or copper ions.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: February 9, 2010
    Assignee: Novellus Systems, Inc.
    Inventor: Daniel R. Juliano
  • Patent number: RE41266
    Abstract: An electrode assembly for a plasma reactor, such as a plasma etch or plasma-enhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof. The electrode plate is composed of a substantially pure material which is compatible with a particular reaction being performed in the reactor, while the support frame is composed of a material having desirable thermal, electrical, and structural characteristics. The support frame is bonded to the electrode plate using a bonding layer, usually a ductile metallic bonding layer, which provides effective thermal and electrical coupling while permitting a degree of thermal expansion mismatch between the support frame and the electrode plate.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: April 27, 2010
    Assignee: Lam Research Corporation
    Inventors: Raymond L. Degner, Eric H. Lenz