Triode, Tetrode, Auxiliary Electrode Or Biased Workpiece Patents (Class 204/298.06)
  • Patent number: 10224189
    Abstract: Apparatus and a method for creation and maintenance of a closed field system in which magnetrons and/or magnet assemblies are provided in a form to create a magnetic field around an area in which a substrate to be coated is located. The method also relates to the steps of cleaning the substrates and applying an adhesive layer prior to the material which is to form the coating.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: March 5, 2019
    Assignee: Teer Coatings Limited
    Inventors: Dennis Teer, Paul Teer, Kevin Cooke, Hailin Sun
  • Patent number: 10224188
    Abstract: Apparatus for sputtering comprises a vacuum chamber defined by at least one side wall, a base and a cover, at least one first electrode having a surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and an additional electrically conductive member. The additional electrically conductive member comprises at least two surfaces arranged generally parallel to one another and spaced at a distance from one another.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: March 5, 2019
    Assignee: EVATEC AG
    Inventor: Martin Kratzer
  • Patent number: 9960018
    Abstract: Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: May 1, 2018
    Assignee: ULVAC, INC.
    Inventors: Yoshinori Fujii, Shinya Nakamura
  • Patent number: 9865440
    Abstract: A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: January 9, 2018
    Assignee: Seagate Technology LLC
    Inventors: Stan Kassela, Wei Xu, Lim Boon Leong, Liu Hao Jun, Chun Wai Tong, Weilu H. Xu, Thomas Larson Greenberg, Antonio Javier Zambano, Robin Andrew Davies
  • Patent number: 9822439
    Abstract: A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: November 21, 2017
    Assignee: FLIR Systems, Inc.
    Inventors: Tommy Marx, Richard E. Bornfreund, Yaroslava Petraitis, James L. Dale
  • Patent number: 9805743
    Abstract: A method of forming a sub-structure, suitable for use as a hot seed in a perpendicular magnetic recording head, is described. A buffer layer of alumina with a thickness of 50-350 Angstroms is formed by atomic layer deposition as a write gap. Thereafter, one or more seed layers having a body-centered cubic (bcc) crystal structure may be deposited on the buffer layer. Finally, a magnetic film made of FeCo or FeNi with a coercivity of 60-110 Oe is deposited on the seed layer(s) by a physical vapor deposition (PVD) method at a rate of 0.48 to 3.6 Angstroms per second. The magnetic film is preferably annealed at 220° C. for 2 hours in a 250 Oe applied magnetic field.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: October 31, 2017
    Assignee: Headway Technologies, Inc.
    Inventors: Shengyuan Wang, Kunliang Zhang, Min Li
  • Patent number: 9279179
    Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: March 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Chin Tsai, Bo-Hung Lin, Chung-En Kao, Chin-Hsiang Lin
  • Patent number: 9194036
    Abstract: A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: November 24, 2015
    Assignee: Infineon Technologies AG
    Inventors: Sun-Oo Kim, Moosung Chae, Bum Ki Moon
  • Patent number: 9139902
    Abstract: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: September 22, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seung-Hee Han, Ji-Young Byun, Hyun-Kwang Seok, Jun-Hyun Han, Yu-Chan Kim, Sung-Bai Lee, Jin-Young Choi
  • Patent number: 9119282
    Abstract: In an inductively coupled plasma processing apparatus, an RF antenna 54 provided on a dielectric window 52 is split into an inner coil 58, an intermediate coil 60, and an outer coil 62 in a radial direction. When traveling along each of the coils from a high frequency power supply 72 to a ground potential member via a RF power supply line 68, the RF antenna 54, and an earth line 70, a direction passing through the inner coil 58 and the outer coil 62 is a counterclockwise direction, whereas a direction passing through the intermediate coil 60 is a clockwise direction. Further, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series with the intermediate coil 60 and the outer coil 62, respectively, between the first and second nodes NA and NB.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: August 25, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Yohei Yamazawa
  • Patent number: 9034156
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 9017533
    Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: April 28, 2015
    Assignee: Applied Materials, Inc.
    Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianmin Tang, Rongjun Wang
  • Patent number: 8992743
    Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: March 31, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Patent number: 8992749
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: March 31, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 8961756
    Abstract: A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: February 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Makoto Inagawa, Hien Minh Huu Le, Akihiro Hosokawa, Bradley O. Stimson, John M. White
  • Patent number: 8920613
    Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: December 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Boitnott, Keith A. Miller
  • Patent number: 8916034
    Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: December 23, 2014
    Assignee: EMD Corporation
    Inventors: Yuichi Setsuhara, Akinori Ebe, Jeon Geon Han
  • Publication number: 20140251789
    Abstract: Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity.
    Type: Application
    Filed: March 6, 2013
    Publication date: September 11, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventor: KEITH A. MILLER
  • Patent number: 8808514
    Abstract: A magnetron sputtering apparatus comprising: a deposition chamber; a processing chamber in communication with the deposition chamber, wherein a target area composed of targets is located at the place where the processing chamber is connected with the deposition chamber; a transfer chamber provided adjacent to the processing chamber, wherein a first gas-tight gate is provided on a wall of the transfer chamber, the first gas-tight gate being opened or closed so as to control the vacuum degree in the transfer chamber and to replace the targets; a transfer device which is provided in the processing chamber and/or the transfer chamber, transfers the target between the transfer chamber and the processing chamber via a second gas-tight gate provided on the adjacent walls of the transfer chamber and the processing chamber for replacement when the transfer chamber is in a set vacuum degree state.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: August 19, 2014
    Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
    Inventor: Zhenyu Xie
  • Publication number: 20140216922
    Abstract: Apparatus and method for delivering power to a substrate processing chamber may include a target and a substrate support pedestal disposed in the chamber, a pedestal impedance match device coupled between the substrate support pedestal and ground, wherein the pedestal impedance match device is configured to adjust a bias voltage on the substrate support pedestal, a target impedance match device coupled between the target and ground, wherein the target impedance match device is configured to adjust a bias voltage on the target, a switch electrically coupled to the pedestal impedance match device and the target impedance match device, a first RF power source coupled to the switch, wherein the switch is configured to direct high frequency voltage from the first RF power source to either the target or the substrate support pedestal, and a second RF power source coupled to the substrate support pedestal.
    Type: Application
    Filed: February 7, 2013
    Publication date: August 7, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventor: ALAN A. RITCHIE
  • Publication number: 20140216924
    Abstract: A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target.
    Type: Application
    Filed: September 7, 2011
    Publication date: August 7, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventor: Hans-Georg Lotz
  • Publication number: 20140216928
    Abstract: A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device includes a target holder provided in a vacuum container, a substrate holder facing the target holder, a means for introducing a plasma generation gas into the vacuum container, a means for generating an electric field for sputtering in a region including a surface of a target, an antenna placement room provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window, and a radio-frequency antenna, which is provided in the antenna placement room, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.
    Type: Application
    Filed: August 30, 2011
    Publication date: August 7, 2014
    Applicant: EMD CORPORATION
    Inventors: Yuichi Setsuhara, Akinori Ebe
  • Publication number: 20140174912
    Abstract: The invention relates to apparatus and a method for applying coatings to substrates such as, for example, a lens or electronic component. The apparatus includes a coating chamber in which there is provided one or more magnetrons which include, typically, an at least partially oxidised metal or metal alloy. A carrier is provided for the substrates to be moved and held in the coating chamber and the carrier is formed from a plurality of units on which the substrates are positioned and the units can be brought together to form the carrier.
    Type: Application
    Filed: June 7, 2012
    Publication date: June 26, 2014
    Inventors: Allen Robert Waugh, Gareth William Hall, Steven Anthony Stanley
  • Patent number: 8758579
    Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: June 24, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Reiner Hinterschuster, Lothar Lippert
  • Patent number: 8734619
    Abstract: A method including directing a first radiation at a first copper-indium-gallium (CIG) sputtering target in a reactive copper indium gallium selenide (CIGS) sputtering process, detecting a first reflected radiation from the first CIG target and determining the amount of selenium poisoning of the first CIG target based on the first reflected radiation.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: May 27, 2014
    Assignee: Hanergy Holding Group Ltd.
    Inventor: John Corson
  • Publication number: 20140110253
    Abstract: Provided is a vacuum coating apparatus that deposits a coating on a substrate, the vacuum coating apparatus including: a vacuum chamber; a vacuum exhaust unit that performs a vacuum exhaust operation inside the vacuum chamber; a plurality of rotation holding units that hold the substrate as a coating subject in a rotating state; and a revolution mechanism that revolves the plurality of rotation holding units about a revolution axis parallel to the rotation axes of the respective rotation holding units; in which the plurality of rotation holding units are divided into a plurality of groups so that power is supplied to the respective rotation holding units in a manner that the rotation holding units of the respective groups have different potentials.
    Type: Application
    Filed: July 5, 2012
    Publication date: April 24, 2014
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Hiroshi Tamagaki, Junji Haga
  • Patent number: 8696875
    Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
    Type: Grant
    Filed: November 14, 2002
    Date of Patent: April 15, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan, Michael A. Miller, Arvind Sundarrajan, Xianmin Tang, John C. Forster, Jianming Fu, Roderick C. Mosely, Fusen Chen, Praburam Gopalraja
  • Patent number: 8691063
    Abstract: The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: April 8, 2014
    Assignee: Diamond Hard Surfaces Ltd.
    Inventor: Sergey Aleksandrov
  • Patent number: 8679307
    Abstract: An apparatus for preparing specimens for microscopy including equipment for providing two or more of each of the following specimen processing activities under continuous vacuum conditions: plasma cleaning the specimen, ion beam or reactive ion beam etching the specimen, plasma etching the specimen and coating the specimen with a conductive material. Also, an apparatus and method for detecting a position of a surface of the specimen in a processing chamber, wherein the detected position is used to automatically move the specimen to appropriate locations for subsequent processing.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: March 25, 2014
    Assignee: E.A. Fischione Instruments, Inc.
    Inventors: Paul E. Fischione, Alan C. Robins, David W. Smith, Rocco R. Cerchiara, Joseph M. Matesa, Jr.
  • Publication number: 20140076718
    Abstract: A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: VAPOR TECHNOLOGIES, INC.
    Inventors: Vladimir Gorokhovsky, William Grant, Edward W. Taylor, David Humenik, Klaus Brondum
  • Patent number: 8668816
    Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: March 11, 2014
    Assignee: Applied Materials Inc.
    Inventors: Peijun Ding, Rong Tao, Zheng Xu, Daniel C. Lubben, Suraj Rengarajan, Michael A. Miller, Arvind Sundarrajan, Xianmin Tang, John C. Forster, Jianming Fu, Roderick C. Mosely, Fusen Chen, Praburam Gopalraja
  • Publication number: 20140027274
    Abstract: A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 30, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, Adjin Sarajlic
  • Publication number: 20140014499
    Abstract: A system for substrate deposition is disclosed. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.
    Type: Application
    Filed: September 10, 2013
    Publication date: January 16, 2014
    Inventors: Peter John Cousins, Hsin-Chiao Luan, Thomas Pass, John Ferrer, Rex Gallardo, Stephen F. Meyer
  • Patent number: 8628647
    Abstract: An arrangement for the separation of particles from plasma for the formation of a coating onto the surface of a substrate under vacuum conditions. The plasma is advantageously formed by electrical arc discharge. The plasma is formed from a target that can be connected as a cathode and positive charge carriers of the plasma are accelerated in the direction of a surface of a substrate to be coated by at least one absorber electrode connected to an electrical potential that is positive with respect to the plasma. The absorber electrode is arranged and orientated such that a direct incidence of plasma onto the absorber electrode is avoided and can be designed in plate form aligned at an obliquely inclined angle which takes account of the divergence of the plasma flow. In addition, at least one permanent magnet or electromagnet element is a component of the arrangement.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: January 14, 2014
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
    Inventor: Carl-Friedrich Meyer
  • Publication number: 20140008214
    Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.
    Type: Application
    Filed: July 5, 2013
    Publication date: January 9, 2014
    Inventors: David Fang Wei Chen, David Ward Brown, Charles Liu, Samuel D. Harkness, IV
  • Publication number: 20130327641
    Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
    Type: Application
    Filed: May 20, 2013
    Publication date: December 12, 2013
    Inventors: Mengqi YE, Zhendong LIU, Peijun DING
  • Publication number: 20130319854
    Abstract: Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above.
    Type: Application
    Filed: May 22, 2013
    Publication date: December 5, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: VIJAY D. PARKHE, RYAN HANSON
  • Patent number: 8574410
    Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: November 5, 2013
    Assignee: The Regents of the University of California
    Inventor: Andre Anders
  • Publication number: 20130277206
    Abstract: The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an ?—Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the ?—Al2O3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the ?—Al2O3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.
    Type: Application
    Filed: June 17, 2013
    Publication date: October 24, 2013
    Inventors: Yoshiaki DAIGO, Keiji ISHIBASHI
  • Publication number: 20130256125
    Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: DONNY YOUNG, ALAN RITCHIE, UDAY PAI, MUHAMMAD RASHEED, KEITH A. MILLER
  • Publication number: 20130248352
    Abstract: A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.
    Type: Application
    Filed: September 10, 2012
    Publication date: September 26, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Chong Jiang, Byung-Sung Leo Kwak, Michael Stowell, Karl Armstrong
  • Publication number: 20130237053
    Abstract: A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
    Type: Application
    Filed: September 26, 2011
    Publication date: September 12, 2013
    Applicant: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Takashi Sakuma, Tatsuo Hatano, Osamu Yokoyama, Atsushi Gomi, Chiaki Yasumuro, Toshihiko Fukushima, Hiroyuki Toshima, Masaya Kawamata, Yasushi Mizusawa, Takara Kato
  • Publication number: 20130233701
    Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.
    Type: Application
    Filed: April 22, 2013
    Publication date: September 12, 2013
    Applicant: 4D-S, LTD
    Inventor: Makoto Nagashima
  • Publication number: 20130220802
    Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
    Type: Application
    Filed: April 10, 2013
    Publication date: August 29, 2013
    Applicant: OC OERLIKON BALZERS AG
    Inventor: OC OERLIKON BALZERS AG
  • Patent number: 8512530
    Abstract: A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: August 20, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Heung-Yeol Na, Jong-Won Hong, Seok-Rak Chang, Ki-Yong Lee
  • Patent number: 8491759
    Abstract: Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: July 23, 2013
    Assignee: COMET Technologies USA, Inc.
    Inventors: John A. Pipitone, Gerald E. Boston
  • Patent number: 8486242
    Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: July 16, 2013
    Assignee: Applied Materials, Inc.
    Inventor: Michael S. Cox
  • Publication number: 20130161187
    Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 27, 2013
    Applicant: Canon Anelva Corporation
    Inventor: Canon Anelva Corporation
  • Publication number: 20130153412
    Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
    Type: Application
    Filed: December 15, 2011
    Publication date: June 20, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: ALAN RITCHIE, DONNY YOUNG, KEITH A. MILLER, MUHAMMAD RASHEED, STEVE SANSONI, Uday Pai
  • Publication number: 20130126333
    Abstract: A vacuum deposition system for forming a dense coating includes a substrate holder for holding a substrate having a substrate surface to be coated, a magnetic field generator, an optional electron source, an optional electron drain, and a deposition source. The magnetic field generator generates a magnetic field in which the substrate is at least partially immersed such that a component of the magnetic field is parallel to the substrate surface such that electrons are forced along a path that causes ionization in the vicinity of the substrate surface. The magnetic field strength at the substrate surface is between 5 and 1000 Gauss. The deposition source provides material to coat the substrate. The vacuum deposition system includes the optional electron source if the deposition source does not provide a source of electrons. A method for depositing a dense coating is also provided.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 23, 2013
    Applicant: VAPOR TECHNOLOGIES, INC.
    Inventor: Klaus Brondum