Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.

Abstract: Embodiments of the invention include a plasma system. The plasma system includes a plasma chamber; an RF driver configured to drive bursts into the plasma chamber with an RF frequency; a nanosecond pulser configured to drive pulses into the plasma chamber with a pulse repetition frequency, the pulse repetition frequency being less than the RF frequency; a high pass filter disposed between the RF driver and the plasma chamber; and a low pass filter disposed between the nanosecond pulser and the plasma chamber.

Abstract: A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

Abstract: Nuclear magnetic resonance (NMR) method, system, and sensing device for downhole measurements. The NMR device for characterizing a subterranean zone includes a tool body, a magnetic element, and a radio frequency coil. The tool body includes an uphole end and a downhole end, where a longitudinal axis extends through the uphole end and downhole end. The magnetic element is located within the tool body and generates a static magnetic field (B0) in a longitudinal direction at a region of the subterranean zone. The radio frequency coil is located within the tool body and generates a radio frequency magnetic field (B1). The magnetic element and the radio frequency coil enable a side-looking NMR mode.

Abstract: A reaction chamber for a chemical vapor apparatus is disclosed. The reaction chamber for the chemical vapor apparatus comprises a housing including an internal space and a susceptor disposed in the internal space so that a substrate is loaded on an upper surface of the susceptor. A shower head is disposed above the susceptor in the internal space of the housing to spray process gas towards the substrate side. An inner barrel with open top and bottom is placed inside the internal space of the reaction chamber so that an upper edge of the barrel is positioned near the showerhead to enclose the substrate and the susceptor. A driving part is connected to the inner barrel. When it is needed to replace the susceptor and the substrate, the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part.

Abstract: Implementations described herein provide a cooling base and a substrate support assembly having the same. In one example, a cooling base is provided that includes a body coupled to a cap. A plurality cooling channels are disposed in the body and bounded on at least one side by the cap. The plurality cooling channels have a polar array of spirals.

Abstract: Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

Abstract: The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

Abstract: A device (2; 2I; 2II; 2IV; 2V; 2VI; 2VII; 2VIII) for generating plasma and for directing an electron beam towards a target (3); the device (2; 2I; 2II; 2IV; 2V; 2VI; 2VII; 2VIII) comprises a hollow element (5); an activation group (21), which is designed to impose a difference in potential between the hollow element (5) and another element which is separate from it, in such a way as to direct the electron beam towards said separate element; and a de Laval nozzle (23), having at least one tapered portion (13), which is tapered towards the separate element and is designed to accelerate a gas flow towards the separate element.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: Provided is a plasma generation apparatus capable of generating uniform plasma over a wide range. The plasma generation apparatus includes two oppositely arranged plasma guns each injecting a discharge gas to be ionized, and having a cathode for emitting electrons, and a converging coil for forming a magnetic flux to guide the emitted electrons, and polarities of the converging coils with respect to the cathodes in the two plasma guns are opposite to each other.

Abstract: [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface. [Solving Means] A deposition method according to an embodiment of the present invention includes evacuating an inside of a vacuum chamber 10 having a deposition chamber 101 formed inside a cylindrical partition wall 20 and an exhaust chamber 102 formed outside the partition wall 20, via an exhaust line 50 connected to the exhaust chamber 102. A process gas containing a reactive gas is introduced into the exhaust chamber 102. With the deposition chamber 101 being maintained at a lower pressure than the exhaust chamber 102, the process gas is supplied to the deposition chamber 101 via a gas flow passage 80 between the partition wall 20 and the vacuum chamber 10.

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Abstract: A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes.

Abstract: A sputtering apparatus, an organic light-emitting display apparatus manufactured using the sputtering apparatus, and a method for manufacturing the organic light-emitting display apparatus are provided. The sputtering apparatus includes: a chamber including a mounting portion configured to hold a deposition target material; a gas supply unit that faces the mounting portion and supplies gas to the chamber; a first target portion and a second target portion that are disposed to face each other within the chamber; and a magnetic field induction coil that surrounds an outside of the chamber.

Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Abstract: At least two gas supply pipes are connected to one gas pipe in a sputtering device. The sputtering device includes: a plurality of gas supply pipes provided outside a plurality of walls for surrounding a target, a plurality of gas pipes, and a plurality of gas supply ports each provided on an inner surface of each of the plurality of walls. The plurality of gas supply ports are each disposed on a side farther away from a film depositing roll than a surface of the target. The sputtering device further includes a plurality of cooling pipes for cooling the walls.

Abstract: In forming an optical thin film on a curved surface of a material to be deposited, a specific space, which is part of a space in a processing chamber and is a space between an arrangement part and a target, is surrounded by a shielding part. In this state, when deposition is performed by a sputtering step in which a voltage is applied to the target in the processing chamber which is in a vacuum state and supplied with an active gas and an inert gas, an optical thin film of a substantially equal optical thickness is formed on the curved surface.

Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

Abstract: The present invention provides a TMR element manufacturing apparatus capable of reducing contamination of impurities in magnetic films. According to an embodiment of the present invention, a tunnel magneto-resistance element manufacturing apparatus includes: a load lock device to load and unload a substrate from and to an outside; a first substrate transfer device that is connected to the load lock device, at least one substrate process device being connected to the first substrate transfer device; a first evacuation unit provided in the first substrate transfer device; a second substrate transfer device that is connected to the first substrate transfer device, multiple substrate process devices being connected to the second substrate transfer device; and a second evacuation unit provided in the second substrate transfer device. At least one of the multiple substrate process devices connected to the second substrate transfer device is an oxidation device.

Abstract: A sputtering device includes a chamber; and a substrate transferring unit for loading a substrate into, or unloading the substrate from the chamber, the substrate transferring unit including a gas injection assembly forming a gas cushion between the substrate and an upper surface of the substrate transferring unit.

Abstract: To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.

Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract: A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.

Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.

Abstract: A deposition apparatus includes a chamber, a chamber, a substrate placing unit which is located in the chamber and on which a substrate is placed, and a sputter unit for forming a thin film on the substrate. The sputter unit includes a first target unit and a second target unit facing the first target unit. A pair of targets are mounted on each of the first target unit and the second target unit. Argon gas is directly injected between the pair of targets. Accordingly, plasma may be more effectively and stably formed. A method of manufacturing an organic light-emitting display apparatus using the deposition apparatus is also disclosed.

Abstract: A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

Abstract: Technologies are generally described for a gas filtration device including an array of parallel carbon nanotubes. The carbon nanotubes may extend between first and second substrates, and the ends of the carbon nanotubes may be embedded in the substrates and cut to expose openings at each end of the carbon nanotubes. The carbon nanotubes may be composed from a graphene membrane which may be perforated with a plurality of discrete pores of a selected size for enabling one or more molecules to pass through the pores. A fluid mixture including two or more molecules for filtering may be directed through the first openings of the array of nanotubes, and the fluid mixture may be filtered by enabling smaller molecules to pass through the discrete pores of the graphene membrane walls of the carbon nanotubes to produce in a filtrate fraction including the smaller molecules and a retentate fraction including larger molecules.

Abstract: A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target.

Abstract: Apparatuses for forming material films on a solar cell substrate of substantially uniform thickness and processes for forming the same are disclosed. The process performed in the apparatuses is physical vapor deposition (PVD) in some embodiments. In one embodiment, an apparatus includes a specially configured flow aperture. In another embodiment, an apparatus includes moveable shutters which open and close in synchronization with a rotating drum on which substrates are mounted for processing. In other embodiments, the apparatus includes a variable power supply or drum speed control which automatically vary the power supply to the apparatus or drum speed respectively in synchronization with the rotating drum.

Abstract: Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.

Abstract: A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Abstract: To be able to realize a relatively wide magnetron sputter cathode, it is proposed that on the vacuum side of a carrier (2) is disposed the sputter target (4) with a backing plate (3), which maintains a gap (14) from the carrier (2). The backing plate (3) is developed as a cooling plate. In it are located cooling means channels (15), which, via an inlet (16) through the carrier (2), are supplied with cooling fluid, which can flow out again via an outlet (17) through the carrier (2). On the atmospheric side is located a magnet configuration (5).

Abstract: A backing plate for a sputter target includes a target receiving part for receiving a target to be sputtered, and a structure for exposing the target receiving part through the backing plate.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Abstract: The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: A magnetron sputtering apparatus of the invention includes: a sputtering chamber in which a target can be opposed to an object to be subjected to film formation; a gas introduction port facing the sputtering chamber; a magnet provided outside the sputtering chamber and opposite to the target and being rotatable about a rotation center which is eccentric with respect to center of the magnet; a sensor configured to detect a circumferential position of the magnet in a plane of rotation of the magnet; and a controller configured to start voltage application to the target to cause electrical discharge in the sputtering chamber on the basis of the circumferential position of the rotating magnet and gas pressure distribution in the sputtering chamber.

Abstract: A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Abstract: A windpipe used in a vacuum coating device includes an outer pipe and an inner pipe positioned in the outer pipe. The inner pipe defines a plurality of first outlets arranged in a line in the peripheral wall of the inner pipe along the axial direction. The outer pipe defines a plurality of second outlets arranged in a line in the peripheral wall of the outer pipe along the axial direction.

Abstract: The invention relates to a process for depositing under vacuum a multilayers coating stack on a flat glass substrate and to a modular coater for the deposit of thin layers on a flat glass substrate. A gas separation zone disposed between two depositing zones of the modular coater comprises at least one gas injector in the vicinity of the convoying path for the glass substrate which passes through apertures from a depositing zone towards the other depositing zone via the separation zone. The invention allows improvement of the separation factor between the two depositing zones.

Abstract: The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.