Abstract: A processing system and associated method for vacuum evaporation of material onto a substrate. The processing system includes a loading chamber, a transfer chamber, and a thermal processing chamber arranged together to form a cluster tool. The cluster tool arrangement provides the system a continuous processing capability. The system also includes an evacuation system arrangement for evacuating the processing system to adequate processing pressure levels. The evacuation system arrangement includes a series of pumps, which are capable of maintaining the selected processing pressure levels for continuous thermal evaporation processing without the need for lowering the pressure to deep vacuum pressure levels.

Abstract: A substrate support having heat transfer enhancing topography. Generally, the substrate support includes a first side that supports the substrate and a second side. A ring and a plurality of substrate support pads project from the first side. The ring is disposed proximate the perimeter of the substrate support. A fluid passage is disposed through the substrate support and is coupled to a well disposed in the first side. A plurality of gas flow channels are disposed in the first side and orientated radially outward from the well to a perimeter channel disposed radially inward and adjacent to the ring.

Abstract: A processing system 12 for processing a substrate with an ionized plasma comprises a processing chamber 13 defining a processing space 14 and including a substrate support 17, a gas inlet 20, and a plasma source for creating an ionized plasma in the processing space. The plasma source comprises an inductive element 24 operable for coupling electrical energy into the processing space. The inductive element 24 winds around portions of the processing space 14 inside the processing chamber 13 and is encased inside a dielectric material 30 to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply 98 for enhancing its magnetization to reduce the capacitive coupling of energy between the inductive element and the plasma.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. At least one set of vertically mounted, dual and triple rotatable cylindrical (or planar) magnetrons with associated vacuum pumps, form semi-isolated sputtering modules. The sputtering modules can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point.

Abstract: A target 3, which is composed of a compound material containing a gaseous component element, is subjected to cathode discharge with a cathode 30 while closing a main valve 4 and a gas-introducing valve 9 to tightly close a vacuum chamber 1. The vacuum chamber 1 is not subjected to reduction of pressure with a vacuum pump 5 by opening the main valve 4. Therefore, the gaseous component element, which is contained in the compound material, is not discharged by the vacuum pump 5. Accordingly, almost all of the gaseous component element contained in the compound material is successfully allowed to adhere and deposit onto a substrate 2. Therefore, a thin film, which has a composition extremely close to that of the compound material, is formed on the substrate 2. According to the film formation method as described above, a compound film, which is used as a coating material for an optical element, can be formed in a desired composition on the optical element.

Abstract: Apparatus and method for sputter depositing a layer of material comprises a sputtering chamber having an internal conductive wall which provides an electrical reference for plasma during sputter deposition. A conductive shield positioned in the processing space of the chamber between the target and the substrate is configured for capturing sputtered material which would deposit on the chamber wall surface during sputter deposition. The conductive shield reduces the amount of sputtered material depositing on the chamber wall and maintains a surface portion of the wall as a generally stable electrical reference for the plasma and is further operable for passing plasma therethrough during deposition to contact the stable electrical reference.

Abstract: This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.

Abstract: Sputtering method and apparatus for depositing a coating onto substrate employs variable magnetic field arranged in vicinity of a cathode within a working chamber, filled with ionizable fluid. By controlling a magnetic field topology, i.e. orientation and value of magnetic strength with respect to cathode there is enabled localization and shifting of plasma away from substrate and by thus improvement of adhesion and properties of deposited coatings.

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

Abstract: A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

Abstract: The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms.

Abstract: A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A thin film forming apparatus comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and power supplying means for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and a sputter gas is supplied to a space formed between the target and the partition member and a reactive gas is supplied to a space formed between the substrate and the partition member.

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Abstract: There is provided by this invention a novel inductively coupled plasma source apparatus that utilizes a transformer to induce closed path secondary plasma currents in a hollow metal housing that is directly cooled by a fluid. This plasma source apparatus is particularly useful for generating a high charged particle density source of ions, electrons, and chemically active species to serve various plasma related processes that may require high power densities. A hollow metal vacuum chamber is coupled to and electrically insulated from a metal vacuum process chamber by means of dielectric gaps that are well shielded from direct exposure to the plasma body. Electrons, photons and excited gaseous species are generated within the metal hollow chamber and process chamber to serve a wide variety of material, surface and gas processing applications. There is also provided by this invention a means of ganging together several hollow metal vacuum chamber assemblies about a single vacuum process chamber.

Abstract: A sealing surface of a sputter deposition chamber is provided with a groove adapted to receive a sealing member. The groove comprises an inner wall having a plurality of restrictive openings configured to restrict the flow of gas from the groove through the plurality of restrictive openings so as to reduce target arcing during a plasma process within the sputter deposition chamber. A method also is provided for reducing defect formation during plasma processing. The method comprises providing a sputter deposition chamber having at least one sealing surface; and restricting the flow of gas from the at least one sealing surface into the sputter deposition chamber so as to reduce target arcing during sputter deposition within the sputter deposition chamber.

Abstract: A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Abstract: An in-line sputtering apparatus includes a deposition chamber, a target installed inside the deposition chamber, a substrate holder to hold a substrate, a substrate holder transferring mechanism which transfers the substrate holder relative to the target such that a thin film made of a material of the target that is formed on the substrate held by the substrate holder, first and second thickness distribution correcting members and a plate driving mechanism. The first and second thickness distribution correcting members are provided above the target, and each of the first and second thickness distribution correcting members has a plurality of movable plates. The plate driving mechanism is linked to the first and second thickness distribution correcting members and moves the corresponding movable plates of the first and second distribution correcting plates, symmetrically.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: An apparatus for distributing a cleaning gas to a semiconductor substrate processing chamber. The apparatus comprises a feed block disposed on top of the processing chamber and a support block disposed over the feed block. The feed block and the support block slidably interfit and are axially moveable with respect to one another.

Abstract: The invention relates to a coating process, particularly for coating a gas turbine blade (1) having cooling passageways (4) opening out onto the surface (2). During the coating operation, a fluid (6) is directed out of the cooling passageways (4) to prevent blocking of the cooling passageways (4). The invention also relates to an apparatus for implementing this coating process.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A gas delivery apparatus and method for directing a flow of gas to the edge of a substrate at an angle to the radial direction of the substrate is provided. The apparatus directs the gas from a gas opening, over a plurality of grooves that are angled relative to a radial line originating at a center of the gas delivery apparatus. Subsequently, the gas is flowed over a portion of the substrate to prevent reactive gases from depositing on selective portions of the substrate.

Abstract: In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

Abstract: To provide a plasma etching method that can suppress discharge of active gases that do not contribute to plasma etching into the atmosphere, a plasma etching apparatus 10 is composed of a vacuum chamber 12, a plasma processing section 14, a helium supply section 16, a PFC supply section 18, a switching device 20, and an exhaust opening 22. In the use of the apparatus 10, first, helium is introduced into the vacuum chamber 12 through the switching device 20. Then, while introducing the helium, helium is also discharged from the exhaust opening 22 to set the interior of the vacuum chamber 12 at a specified pressure. When the pressure within the vacuum chamber 12 is stabilized at the specified pressure, plasma is generated within the vacuum chamber 12, and at the same time, helium is switched to carbon tetrafluoride by the switching device 20. As a result, carbon tetrafluoride that does not contribute to the plasma etching is prevented from being discharged into the atmosphere.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract: Two mutually opposite sputtering surfaces of at least one target are self-enclosed such that a closed loop gap, and consequently a closed loop plasma discharge space, is formed. A gas flow is created between the sputtering surface and directed against workpieces. No gap ends exist on the closed loop gap so that electrons that move along and within the plasma loop can recirculate until most of their energy has been transferred through impacts to the gas particles.

Abstract: During sputtering for use in thin film deposition, anomalous discharge is prevented from generating between a target and a backing plate, and a target presser. In the target presser also serving as an earth shield and a deposition preventing plate, an insulating member staying in contact with the sputtering target or the backing plate is provided with a recess constituted of two or more different depths so that the recess does not come in contact with the sputtering target or the backing plate.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.

Abstract: A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etching the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Abstract: A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.

Abstract: A device for the sputter application of hard material coatings, including an exhaustible vacuum chamber, at least one sputtering source for depositing a coating material, a plurality of fixtures for supporting a plurality parts to be coated, the fixtures being mounted on planet gears which are movable via a planetary drive, a centrally disposed heating device, a reactive gas inlet, and a plurality of movable screens for covering the at least one sputtering source, the screens being arranged to surround the fixtures, wherein the heating device, the screens, and the planetary drive comprise an assembly which is removable from the vacuum chamber.

Abstract: A getter system for purifying the gaseous atmosphere within a confinement volume of a process chamber is disclosed. In a process chamber provided with at least one screen that defines a confinement volume, the getter system includes at least one substantially planar getter device disposed within the confinement volume such that the at least one getter device is substantially parallel to and spaced apart from the at least one screen. The at least one getter device has an inner surface facing the at least one screen and an outer surface facing the confinement volume, with at least the inner surface being formed of getter material. The at least one getter device is spaced apart from the at least one screen such that the inner surface and the at least one screen define an inner space that is in gas flow communication with the confinement volume.

Abstract: A shield assembly for protecting the walls of a plasma sputter reactor from deposition while allowing high flow of processing gas into the processing space of the reactor without the plasma leaking out of the processing space. The shield assembly is particularly useful for reactive sputtering, for example, of TiN or TaN, in which large amounts of nitrogen need to flow into the chamber. The shield assembly includes a primary shield positioned inside of the chamber sidewalls and protecting the sidewalls and preferably also the bottom wall and sides of the pedestal. Multiple holes are formed in the primary shield to pass gas input through a gas inlet in the chamber walls outside of the primary shield. A baffle shield in positioned inside of the primary shield and covers the holes in the primary shield with a gap between the two shields. The baffle shield extends only partway along the primary shield so that gap communicates with the processing space of the reactor.

Abstract: The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

Abstract: In magnetically enhanced sputtering, pulses are applied having a very high instantaneous power, of the order of at least 0.1 kW-1 MW. In such sputtering regions exist in which electrons are trapped by the magnetic field generated by magnets cooperating with the electric field between the anode (part of the wall enclosing the chamber in which sputtering is performed) and the cathode (which at the same time is the target, from which material is to be sputtered). An ionization of the gas in the chamber will then for lower applied power occur preferably in those regions causing a non-uniform erosion of the target. For very high power in the pulses or power density in the pulses the gas in these regions, and in regions adjacent thereto, will enter another state of complete ionization, which considered in energy terms is located above the unwanted state of an electric arc which is formed for a lower supplied power.

Abstract: In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract: A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1×10−1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.

Abstract: A mirrortron sputtering apparatus for sputtering on a substrate includes a vacuum chamber for placing therein a pair of targets spaced apart from each other with inner surfaces thereof facing each other and outer surfaces thereof positioned opposite to the inner surfaces, and magnets respectively disposed closer to the outer surfaces of the targets for forming a magnetic field between said pair of targets. The magnetic field has a magnetic field distribution with a peripheral region having a high magnetic flux density and a center region having a low magnetic flux density. In this arrangement, the substrate is set alongside a space between the pair of targets as facing said magnetic field.

Abstract: A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.

Abstract: A sputtering system and magnet array for depositing metal and metal-reactive gas coatings onto a substrate. The magnet array is designed for use in a rotating magnetron. The magnet array includes a plurality of magnets disposed on a plate. The plurality of magnets is arranged such that a closed-loop magnetic path is formed. The shape of the magnetic path is a double-lobe structure that includes first and second lobes that are symmetric to one another about an axis in the plane of the plate that intersects the center of rotation of the plate. The magnets are arranged in several rows. A first row of magnets has a double-lobe structure that corresponds to the first and second lobes of the magnetic path. Second and third rows of magnets are arranged in the shape of rings inside the first and second lobes of the magnetic path magnetic path. The lobe structure of the magnetic path can be circular or elliptical in shape.

Abstract: A method and a device for manufacturing a thin film by a vacuum deposition method, and a magnetic recording medium produced thereby are disclosed. A thin film of high quality is mass-produced while introducing reaction gas to a thin film forming section from a nozzle consisting of minute tubes, so that the flow of evaporated atoms is not disturbed by the reaction gas.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).

Abstract: In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.