Abstract: A substrate processing device is provided. The substrate processing device includes a processing container including a mounting table, a refrigeration device disposed to have a gap between the mounting table and the refrigeration device, a first elevating device configured to raise or lower the refrigeration device, a refrigerant flow path to supply a refrigerant to the gap, a compression device configured to compress the refrigerant supplied to the refrigerant flow path, and refrigerant transfer pipes connected to both a first connection-fixing unit which is a flow path port of the refrigerant flow path and a second connection-fixing unit fluid-communicating with the compression device. Further, each of the refrigeration transfer pipes extends such that at least a portion of the refrigerant transfer pipe is curved between the first and second connection-fixing units, and each of the refrigerant transfer pipes is placed on a support member at the second connection-fixing unit.

Abstract: A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

Abstract: A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

Abstract: A microwave magnetron includes a cathode for emitting electrons, a filament for receiving a filament current to heat the cathode to enable to cathode to emit the electrons, and an anode to which anodic power can be applied to affect a flow of the electrons. An anodic power input receives the anodic power to be applied to the anode, the anodic power being characterized by an anodic current, an anodic voltage, and an anodic impedance, the anodic impedance being a quotient of the anodic voltage and the anodic current. An electromagnet power input receives electromagnet power and applies the electromagnet power to an electromagnet to control an intensity of a magnetic field, the electromagnet power being characterized by an electromagnet current. A controller adjusts at least one of the parameters of the magnetron to affect the flow of electrons while maintaining the anodic impedance constant.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. A lower surface of the second ring component contains an upper alignment coupling and an upper surface of the adjustable tuning ring contains a lower alignment coupling. The lower alignment coupling of the adjustable tuning ring is configured to mate with the upper alignment coupling of the second ring component to form an interface. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

Abstract: Aspects of the present disclosure generally relate to methods and apparatuses for adjusting an edge ring position, and for removing or replacing one or more components of a process kit of a process chamber. The process kit includes one or more of an edge ring, a support ring, a sliding ring, and other consumable or degradable components.

Abstract: A device for supporting a substrate, an apparatus for manufacturing a display panel, and a method for supporting a substrate are provided. The device for supporting a substrate comprises: a bearing mechanism being provided with a through hole for bearing a substrate; one or more sticky pads on the bearing mechanism surrounding the through hole, which are used for fixing the substrate on the bearing mechanism; and an elevating mechanism, which controls lifting and lowering of the substrate by passing through the through hole, wherein a top of the lifting mechanism is provided with a light-emitting member that emits light when in contact with the substrate, to illuminate the one or more sticky pads such that stickiness of the sticky pads is reduced from a first stickiness to a second stickiness.

Abstract: A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room.

Abstract: Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. Further, the plurality of protrusions is formed at a plurality of positions set at a regular interval on each of a plurality of circles set concentrically and at a regular interval around a center of the placing region. Furthermore, among the plurality of positions, a plurality of positions set on each of any two adjacent circles is set not to be positioned on the same straight line extending from the center.

Abstract: Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

Abstract: A system and method for disassembling a multiple contact probe head including a plurality of contact probes positioned by a first die at a first end of the plurality of probes and a second die at a second end of the plurality of probes, are provided. The system may include a manifold configured to sealingly receive an opposing side of the first die from the second die; and a vacuum source operatively coupled to the manifold to apply a vacuum to an interior of the manifold applying a force to the plurality of contact probes in position in the first die across. Where the probes include a paramagnetic material, a magnetic source may be employed to hold the probes during disassembly.

Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

Abstract: An example component polishing method includes polishing a component protecting portions of the component during the polishing using a barrier spaced from the component. The barrier is configured to move together with the component during the polishing.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: Systems to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a back-side process system deposits a metal layer on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process.

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

Abstract: This dummy substrate is for use in an inline reactive sputtering apparatus. The main unit thereof is made of a rectangular-plate-like frame structure in which an opening portion in a rectangular shape is formed in a metal plate in a similar shape. It is configured such that a contact portion of a carrier with the main unit is covered with the main unit. As a result, even while the sputtering apparatus is in operation, there is no possibility of the occurrence of undesirable situations such as glass cracking, making it possible to significantly increase the number of times the dummy substrate is used. Furthermore, the dummy substrate continues to cover the contact portion with the carrier. Thereby, it is possible to prevent deposition of a substance left in a sputter deposition chamber, especially a compound thin film, on the contact portion of the carrier with the substrate.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one intaglio printing plate (10) to be coated, a vacuum system (4) coupled to the vacuum chamber (3) adapted to create vacuum in the inner space (30) of the vacuum chamber (3), and a physical vapour deposition (PVD) system (5) adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface (10a) of the intaglio printing plate (10), which physical vapour deposition system (5) includes at least one coating material target (51, 52) comprising a source of the wear-resistant coating material to be deposited onto the 32 engraved surface (10a) of the intaglio printing plate (10).

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate.

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Abstract: An annular member 10 according to an aspect of the invention surrounds the periphery of a substrate to be processed 2. The annular member 10 includes an annular main body 11 which is made of a ceramic sintered body or quartz glass, and has at least one main surface S1. The main body 11 has a groove portion G disposed on the main surface S1 and a plurality of projections 14 protruded from a bottom surface B of the groove portion G. A film forming apparatus 1 according to an aspect of the invention includes the annular member 10 and a reaction chamber 4 in which the annular member 10 is disposed, and which performs formation of a metal film 3 on the substrate to be processed 2. The groove portion G of the annular member 10 is exposed to the inside of the reaction chamber 4.

Abstract: A deposition apparatus may include a first substrate mounting member and a second substrate mounting member that may overlap the first substrate mounting member. The deposition apparatus may further include a sputter unit disposed in a space located between the first substrate mounting member and the second substrate mounting member. The sputter unit may have a first opening and a second opening. The first opening may be disposed closer to the first substrate mounting member than the second opening. The second opening may be disposed closer to the second substrate mounting member than the first opening. A first set of material and a second set of material may be simultaneously provided through the first opening and the second opening, respectively.

Abstract: A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality of rotary shaft units that change rotation and an inclination angle of the substrate holder, and a target unit that supplies a thin film material for formation on the substrate.

Abstract: To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.

Abstract: A sputtering device includes a chamber; and a substrate transferring unit for loading a substrate into, or unloading the substrate from the chamber, the substrate transferring unit including a gas injection assembly forming a gas cushion between the substrate and an upper surface of the substrate transferring unit.

Abstract: A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the silicon carbide substrate. The heating is performed in a non-oxidizing atmosphere, and is followed by another heating step for activating the dopants.

Abstract: The disclosure relates to a sample-receiving device for sample materials in ultra-high vacuum chambers, in particular for sputter coating installations.

Abstract: The invention relates to a coating mask (1) for electrolytically coating the piston ring groove (39) of a piston (38), which is made of an elastically deformable material and has openings (3 to 10) that are arranged axially and are distributed in a uniform manner over the periphery, into which rods (11 to 18) of an expansion device (19) can be introduced, the rods being arranged in a displaceable manner such that the expansion device (19) can increase the radial diameter of the coating mask (1) and also the inner opening (2) so that the piston (38) can be introduced into the inner opening (2). The radial diameter of the coating mask (1) is selected in such a manner that after the reduction of radial diameter of the coating mask (1) and the inner opening, the elastically tensed coating mask (1) presses sealing lips (44, 45) of the coating groove (37) against the piston (38), on both sides of the piston ring groove (39).

Abstract: A sputtering apparatus includes a support assembly and posts. The support assembly includes an upper base, a lower base, seat members, and connection posts interconnected between the upper base and the lower base. The upper base defines cutouts. The seat members are rotatably mounted on the lower base and aligned with the cutouts. Each seat member includes a hollow receiving post, a support post moveably received in the receiving post, a lever bar pivotably connected to the receiving post, and a drive post, the drive post and the support post are coupled to opposite ends of the lever bar. Each seat member is rotatable about a longitudinal axis of the receiving post. The posts fix workpieces in place. Each post includes a rod body portion having a first end and an opposite second end, an engagement portion at the first end, and a protrusion extending from the second end.

Abstract: A plasma chamber for depositing a battery component material on a partially fabricated battery cell comprising a battery component layer containing charge-carrying metal species and having an exposed surface. The chamber comprises a support carrier to hold a battery support comprising the partially fabricated battery cell. A mesh screen is positioned at a preset distance from the support carrier, the mesh screen having a plurality of mesh openings. An exhaust maintains a pressure of the process gas in the plasma chamber. A plasma power source is capable of applying an electrical power to the process gas to generate a plasma from the process gas for plasma deposition, during which the mesh screen is capable of reducing migration of the charge-carrying metal species across the battery component layer.

Abstract: A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, and a housing configured to support the first rotating support unit and the second rotating support unit. The second rotating support unit and the housing or the support column and the housing are electrically insulated from each other.

Abstract: A rotary sputtering target assembly and method of making the same including a target and a backing tube having a plated bonding surface. The backing tube and the target are bonded together along the plated bonding surface.

Abstract: Disclosed is a substrate processing system with a magnetic conduit configuration to improve the movement of a substrate carrier within the system. The configuration specifically provides for safe, secure movement of a carrier between multiple levels of a substrate processing system by using magnetic conduits to redirect magnetic forces created by a linear motor, permitting the linear motor to be positioned outside of the system and in a location that will not interfere with the movement of the carrier.

Abstract: A structure of reaction chamber of semiconductor sputtering equipment is disclosed, including a chamber case, an elevation platform, a plurality of target fixing elements, a carrier ring and a covering protective ring, wherein the contact surface of the target fixing element, the ring-shaped protruding surface of the carrier ring and the attachment surface of the covering protective ring are all coarse surfaces with uneven patterns. As such, during sputtering, the contact surface, ring-shaped protruding surface and attachment surface can withstand the deposition thickening and extend the cycle of cleaning components and life span so as to improve utilization rate of the equipment and reduce the manufacturing cost.

Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.

Abstract: An antimagnetic sputtering device and a method for driving the same, the device including a vacuum chamber; a chuck on a bottom side of an inside of the vacuum chamber, the chuck providing a space on which a substrate is to be seated; a target on an upper side of the inside of the vacuum chamber, the target facing the chuck; a magnet on an upper portion of the target; a driving unit that drives the magnet; and a control unit that controls the driving unit to move the magnet at predetermined time intervals while the device is in a standby mode after completion of a sputtering process for the substrate.

Abstract: A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.

Abstract: The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.

Abstract: Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.

Abstract: Methods and apparatuses for performing combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. The processing chamber includes a sputter assembly disposed over the substrate. The sputter assembly includes a rotatable n-fold, symmetric-shaped magnetron and a sputter target. The methods include depositing a first film on the surface of a first site-isolated region of the substrate. The methods further include depositing a second film on the surface of a second site-isolated region of the substrate. Furthermore, methods include evaluating results of the first and second films.

Abstract: A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.