Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other.

Abstract: A process of making an electric current rectifying device using spatially coupled bipolar electrochemical deposition includes (a) placing at least two electrically conductive substrates, which may be a source of electrically conductive material, or a separate source of electrically conductive material, together with at least one semiconductor into an environment capable of conducting electricity and containing electrodes; (b) aligning the substrates and the semiconductor with respect to the electrodes such that the electrodes are not in contact with the substrates or the semiconductor and such that the material will form a conductive structure between and in contact with the substrates and the semiconductor when an electric field is applied between the electrodes; (c) to form a first electrically conductive structure between and in contact with a first of the substrates and the semiconductor; (d) reversing the polarity of the voltage to form a second electrically conductive structure.

Abstract: It is an object of the present invention to provide an anodizing apparatus capable of efficiently performing anodizing. In order to achieve this object, an anodizing apparatus for anodizing a substrate to be processed in an electrolytic solution includes a process tank for storing the electrolytic solution, the process tank having an opening in a wall, a negative electrode arranged in the process tank to oppose the opening, and a positive electrode contacting a surface of the substrate to be processed which is arranged to close the opening from an inside of the process tank, the surface being open outside the process tank through the opening.

Abstract: A method is provided for forming a film having excellent anticorrosion properties on a metal surface without producing sludge, and without using phosphorus or chromium. In this method, the following steps (a)-(c) are performed on a metal material: (a) degreasing, (b-1) pretreatment if necessary, and (c) which comprises the following steps (c-1) or (c-2). The film-forming step (c-1) is a step for forming a film by bringing the metal material in contact with an aqueous solution comprising at least one of the following compositions (A), (B), (C) or (D): (A) is a monomer comprising a sulfonium group at one end of the molecule. (B) is a water-soluble polymer obtained by homopolymerization or copolymerization of the monomer (A). (C) is an emulsion or water-soluble polymer comprising a sulfonium group obtained by copolymerization of the monomer (A) and a radical-polymerizable unsaturated monomer excluding the monomer (A).

Abstract: A method of manufacturing a polymer transistor having a controllable gap is provided in an embodiment. In the embodiment, a conducting tip is positioned proximate to a conducting surface so as to form a gap, an electrochemical medium is introduced in contact with the conducting tip and the conducting surface, and an electrical potential is applied across the electrochemical medium so as to deposit a conductive polymer that electrically bridges the formed gap. In another embodiment, a counter electrode is provided in the electrochemical solution, facilitating processing in which the electrochemical potential at the conducting tip and at the conducting surface are the same and there is a return path for electrical current through the counter electrode. Repositioning of the tip during and after polymer deposition provides, in a further embodiment, adds additional capability with respect to gap control and polymer properties.

Abstract: Thin, light weight bipolar plates for use in electrochemical cells are rapidly, and inexpensively manufactured in mass production by die casting, stamping or other well known methods for fabricating magnesium or aluminum parts. The use of a light metal, such as magnesium or aluminum minimizes weight and simultaneously improves both electrical and thermal conductivity compared to conventional carbon parts. For service in electrochemical cells these components must be protected from corrosion. This is accomplished by plating the surface of the light weight metal parts with a layer of denser, but more noble metal. The protective metal layer is deposited in one of several ways. One of these is deposition from an aqueous solution by either electroless means, electrolytic means, or a combination of the two. Another is deposition by electrolytic means from a non-aqueous solution, such as a molten salt.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: An anode container, electroplating system, method and object so plated. A feature of the invention is that an anode container has an interior cross-sectional area, at or near a lower end thereof, that is larger than an interior cross-sectional area of an upper end thereof. An anode-receiving container also has a body with a plurality of sides and a lower end having a larger cross-sectional interior area than an upper end. The container may also include punched out apertures positioned to provide strength to the container and an apparatus to vibrate the container coupled to a lower end of the container.

Abstract: A method and a device are described for the repair and/or touch-up of small surface flaws in large press plates or endless bands of sheet metal, especially steel sheet, having a structured metal coating and a hard-chrome plating for surface-embossing plastic-coated wooden or laminated panels. Each flaw is repaired by surrounding it with a mask, pickling, and galvanically metallizing it. For a simplified and cost-favorable repair or touch-up, a galvanic solution is applied to the masked and pickled flaw for microgalvanizing damaged areas smaller than 14 mm.sup.2 by dipping the tip of an electrode into the solution. The pickled flaw can first be provided with a thin, microgalvanically applied nickel layer, and it is then copper-plated. The copper build-up is restructured by hand, if necessary, and covered with a hardened cobalt layer.

Abstract: Simultaneous non-contact plating and planarizing of copper interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode and a metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

Abstract: Plating of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

Abstract: The present invention relates to a bipolar electrochemical process for toposelective electrodeposition of a substance on a substrate comprising (a) placing the substrate and at least one of the substance and a source of the substance into an environment capable of conducting electricity and containing electrodes; (b) aligning the substrate on which the substance is to be deposited with respect to the electrodes such that the electrodes are not in contact with the substrate and the substance will be deposited in a predetermined location on the substrate when an electric field is applied; and (c) applying a voltage to the electrodes to create an electric field of a sufficient strength between the electrodes and for a time sufficient to deposit the substance on the substrate at the predetermined location in substantial alignment with the electric field.

Abstract: A system and method is provided for electrolytic pickling a metal strip, where the electric current is conducted through the strip indirectly without electrically conductive contact between the strip and the electrodes. The strip is run vertically or substantially vertically through the process, and the electrolyte liquid is fed in between the strip and the electrodes.

Abstract: This invention provides an apparatus for producing an electrode foil for use in aluminum electrolytic capacitors with which a high capacitance is obtained while the distortion of the foil and the leakage current can be controlled. At least two electrode plates as cathode are disposed in an electrolytic tank containing an electrolytic solution, and a direct current is supplied between an aluminum foil as anode and the electrode plates. Anodization is conducted continuously by turning the direction of the aluminum foil via rollers and conveying the foil between the electrode plates. During this treatment, the length and the position of the effective sections of the electrode plates are adjusted to keep the length to be at most two-thirds of the distance between an area near the surface of the electrolytic solution and the upper part of the bottom roller, so that the peak value of the anodizing current density appears not at the surface of the electrolytic solution but in the electrolytic solution.

Abstract: The invention relates to a method for continuous uniform electrolytic metallizing or etching of metal surfaces, and to a device suitable for carrying out this method. The invention is particularly suitable for treating printed circuit boards and conductive films in installations through which the metal surface being treated passes horizontally. In order to avoid metal coatings of differing thicknesses being deposited on narrow and wide conductor strips in printed circuit boards, according to the present invention operation is with movable, preferably rotating roller-shaped intermediate electrodes, which roll without short circuit at a very close effective distance above the metal surface being treated, or which contact the surface in a wiping manner. These intermediate electrodes are not electrically connected to the source of bath current, thus serving as bipolar electrodes, and are located between the surface being treated and a suitable counter-electrode.

Abstract: This invention offers a method of manufacturing a matted electrodeposition coating composition which does not mask the hue and the fine pattern which are inherent to the thing to be coated and also offers a method of conducting such an electrodeposition. The invention also relates to a matted electrodeposition coating composition which is characterized in containing (A) an anionic acryl resin having an acetoacetyl group in a side chain, (B) an amine and water, (C) an aldehyde and (D) an alkoxylated methylolmelamine resin with a water dilutability of not more than 4.0 cc and optionally containing (D) an acidic composition with pKa of not more than 1.9 as well as a method of producing a matted electrodeposition coating using the aforementioned composition.

Abstract: A technique for utilizing an electric field to initiate electroless deposition of a material to form layers and/or structures on a semiconductor wafer. The wafer is disposed between a positive electrode and a negative electrode and disposed so that its deposition surface faces the positive electrode. A conductive surface on the wafer is then subjected to an electroless copper deposition solution. When copper is the conductive material being deposited, positive copper ions in the solution are repelled by the positive electrode and attracted by the negatively charged wafer surface. Once physical contact is made, the copper ions dissipate their charges by accepting electrons from the conductive surface, thereby forming copper atoms on the surface. The deposited copper have the catalytic properties so that when a reductant in the solution is absorbed at the copper sites and then oxidized, additional electrons are released into the conductive surface.

Abstract: Larvae swimming in a mass of fresh water and having interiors substantially constituted of highly electrically conductive substance are immobilized or killed. Two capacitor plates, which include exterior insulation, are located on opposite sides of the mass of fresh water. A low power AC voltage is applied across the plate. The AC voltage is sufficient to establish an alternating electric field in the mass of fresh water between the plates and to alternately polarize the mass of fresh water and the larvae. Thereby is generated an AC current in the substance in the interiors of the larvae sufficient to cause therein a concentrated power dissipation of immobilizing or killing magnitude.