Abstract: Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

Abstract: The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.

Abstract: A system for photodynamic therapy is provided that includes a light delivery device that delivers the illumination necessary to perform photodynamic therapy. The light delivery device includes one or more etched fibers arranged to illuminate a selective region of a body for photodynamic therapy. An illumination device is coupled to the light delivery device to provide the necessary illumination to the light delivery device.

Abstract: A process for manufacturing a nanocomposite thermoelectric material having a plurality of nanoparticle inclusions. The process includes determining a material composition to be investigated for the nanocomposite thermoelectric material, the material composition including a conductive bulk material and a nanoparticle material. In addition, a range of surface roughness values for the insulating nanoparticle material that can be obtained using current state of the art manufacturing techniques is determined. Thereafter, a plurality of Seebeck coefficients, electrical resistivity values, thermal conductivity values and figure of merit values as a function of the range of nanoparticle material surface roughness values is calculated. Based on these calculated values, a nanocomposite thermoelectric material composition or ranges of compositions is/are selected and manufactured.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract: An example component finishing method includes immersing a surface of a component within a fluid during a finishing process. The method heats fluid near the surface during the finishing to create a convection current within the fluid that carries a byproduct of the finishing away from the surface.

Abstract: An example component machining method includes immersing a surface of a component within a fluid during a machining process. The method heats the surface during the machining to vary the machining process at the surface relative to other surfaces of the component.

Abstract: Methods of dispensing a small amount of liquid onto a work piece includes in some embodiments known providing a microscopic channel for the liquid to flow from the nanodispenser. In some embodiments, dispensing the liquid includes dispensing the liquid using a nanodispenser have at least one slit extending to the tip. Some methods include controlling the rate of evaporation or the rate of liquid flow to establish an equilibrium producing a bubble of a desired size.

Abstract: The present invention provides a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Abstract: An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.

Abstract: An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process.

Abstract: An implantable biocompatible material includes one or more vacuum deposited layers of biocompatible materials deposited upon a biocompatible base material. At least a top most vacuum deposited layer includes a homogeneous molecular pattern of distribution along the surface thereof and comprises a patterned array of geometric physiologically functional features.

Abstract: An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.

Abstract: Methods and apparatus for monitoring in situ the progress of planarization and/or removal of a thin metal layer from a substrate during membrane-mediated electropolishing processes are provided.

Abstract: The invention is a method of electrochemical etching of a non-conductive insulator. The method entails inducing a current in the insulator by exciting electrons into the conduction band by supplying the needed energy through irradiation of the insulator. Alternatively, electrons may be supplied externally from an electron gun. The insulator is subject to an electrical bias, and the induced or supplied electrons then create a current in the insulator that effects the etch rated.

Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically connecting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor or device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically con netting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: Stent, as well as a method and device for fabricating the stent, wherein the stent has a tubular lattice structure comprising individual struts and at least one strut of which at least one longitudinal section runs with at least one directional component in the radial circumferential direction of the stent, wherein the surface of the longitudinal section facing the outside of the stent is curved only about the longitudinal axis of the stent. According to the invention, the surface of longitudinal section of the strut, which surface faces the inside of the stent, has such a curvature that the strut cross section is fluidically optimized.

Abstract: Ultra-thin sections in an electrically conducting material are formed by electrochemically removing material to a thickness of approximately 5 to 150 micrometers and removing further material by laser micromachining to a material thickness of 1 to 30 micrometers. The electrochemical process quickly removes substantial material but is not as precise and accurate as laser machining to create the ultra-thin sections or translucent sections. Removing material by an electrochemical process may be controlled down to a thickness of approx. 10-12 micrometres so that enough margin of a material thickness is left at the bottom of this first cavity. The laser micromachining process removes remaining material down to a predetermined level, e.g. 1-5 micrometres, relatively rapidly, so that a relatively quick process for the manufacture of ultra-thin sections in an electrically conducting material is achieved. A metal structure manufactured by the novel and inventive process is disclosed.

Abstract: There is provided a method for manufacturing a printed wiring board that allows molten scattered Cu and an overhang to be selectively removed while scarcely decreasing a thickness of wires, and an electrolytic etching solution suitably used in the method. In the method for manufacturing a printed wiring board in which a via that reaches from a surface copper layer to an inner-layer copper layer of a multilayer board in which copper layers and insulating layers are alternately layered is machined by means of a laser, a process of machining the via including steps of forming a laser absorbing layer on a surface of a copper layer disposed on the surface of the multilayer board, irradiating the laser, performing an electrolytic etching and removing the laser absorbing layer is carried out in this order.

Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

Abstract: A method for manufacturing an inkjet print head with ink channels formed on a member including a piezoelectric body, and where ink is jetted from each of the ink channels by applying a voltage to electrodes provided on the piezoelectric body for each of the ink channels thereby driving the piezoelectric body. The method has the steps including adsorbing a catalyst onto the channel plate with the ink channel grooves; removing a part of the catalyst by a laser beam; and plating at least one side surface and a bottom surface of the channel plate to form a layer which serves as the electrodes, on the catalyst which has not been removed by the laser beam.

Abstract: The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.

Abstract: In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.

Abstract: In an electrolytic cell a membrane consisting of dielectric material such as an organic polymer, which separates two chambers of the electrolytic cell from each other is produced using an etching solution which is provided in one of the chambers, contains active etching ions, while the other chamber contains a solution, which does not have an etching action. An electrical field is generated through the membrane. The etching progresses along ion tracks in the membrane and first produces one funnel-shaped pore per ion track. Immediately prior to the breakthrough, the ions, which do not have an etching action, begin to penetrate the still existent thin layer with fine pores—the active layer—and displace the ions with an etching action. An intensified electric current, driven by the adjacent field, is established and the etching process at the bottom of the pore shifts sideways according to the concentration of etching ions still present. The process is stopped by deactivating the field and flushing the membrane.

Abstract: An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm2 or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.

Abstract: Disclosed herewithin is an apparatus for fabricating a stent which involves processing a tubular member whereby no connection points to join the edges of a flat pattern are necessary. The process includes the steps of: a) preparing the surface of a tubular member, b) coating the outside surface of the tubular member with a photo-sensitive resist material, c) placing the tubular member in an apparatus designed to simultaneously rotate the tubular member while passing a specially configured photographic frame negative between a light source and the tubular member, d) exposing the tubular member to a photoresist developer, e) rinsing the excess developer and uncured resist from the exposed tubular member, f) sealing the inner lumen of the tubular member, and g) treating the tubular member with a chemical or electro-chemical process to remove uncovered metal. By modifying the photographic negative, this process can be employed to fabricate a virtually unlimited number of stent designs and configurations.

Abstract: The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using etching and deposition techniques. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for photo stimulated etching of objects in a liquid solution, patterning glass, and photoselective metal deposition. For photo stimulated etching of objects in a liquid solution, the invention provides a system and method for immersing a substrate in an etchant solution, exposing the immersed substrate to patterned light, and etching the substrate according to the pattern of incident light.

Abstract: A method for the production of filters in which a blank of n- or p-doped etchable semiconductor material is connected as an anode or a cathode according to doping. The method includes contacting a first side of the blank with an etching solution in which a counterelectrode is arranged to electrochemically etch the first side, and supplying activation energy to generate minority charge carriers to the blank during the etching process. The activation energy supplied per unit time is reduced with increasing etching progress.

Abstract: An electrochemical machining process gives a workpiece such as a honeycomb panel a 3-dimensional profile form having a varying cross-section perpendicular to an axis of the profile form. In the process an electrode is maintained in a constant position relative to the axis and the surface of the profile form is exposed differentially to the action of the electrode in the axial direction to vary the amount of material removal and so vary the cross-section.

Abstract: A method of making improved substrates for desorbing and ionizing analytes takes an n-type semiconductor substrate and provides a strong light source. By focusing the illumination from the light source onto the n-type semiconductor substrate results in at least one lit region on the n-type semiconductor substrate. The substrate is electrochemically etched with a low current during illumination to form at least one sample reservoir, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.

Abstract: There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.

Abstract: A method of making, by etching, depressions in selected portions of an etching surface of an electrically conductive etching material, the depressions forming an etching pattern, comprises the step of contacting the etching material with an etchant. A passivating layer is formed on the etching material which layer decreases or stops the etching capability of the etchant on the surface and which is dissolved in a chemical reaction when exposed to electromagnetic radiation. An electrode with electrically conductive electrode portions in selected portions of an electrode surface is provided, the electrode portions forming an electrode pattern corresponding to the etching pattern. The electrode is arranged in contact with the etchant and with the electrode portions facing the etching surface of the etching material, an electric voltage is applied between the electrode and the etching material, and the etching material is exposed to electromagnetic radiation essentially perpendicular to the etching surface.

Abstract: An interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.

Abstract: In an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.

Abstract: In the manufacturing of the cold cathode device which has a porous silicon portion as an emitter portion, the silicon layer is given an electric potential, while the gate electrode is given an electric potential lower than that of the silicon layer. And thereby, the predetermined portion of the silicon layer is subjected to anodic etching to be rendered into the porous silicon portion. With such anodic etching, the cold cathode device with the porous silicon portion is obtained.

Abstract: In the manufacturing of the cold cathode device which has a porous silicon portion as an emitter portion, the silicon layer is given an electric potential, while the gate electrode is given an electric potential lower than that of the silicon layer. And thereby, the predetermined portion of the silicon layer is subjected to anodic etching to be rendered into the porous silicon portion. With such anodic etching, the cold cathode device with the porous silicon portion is obtained.

Abstract: A method for producing a filter includes the steps of providing a blank of etchable semiconductor material having a first side and a second side and affixing a holding element to the blank. The holding element is chemically resistant to an etching solution. A current source is connected to the blank and at least one of the first and second sides of the blank is illuminated with light. The holding element and the blank are immersed in the etching solution until the first side of the blank is wetted so that the first side is etched electrochemically. The holding element is affixed to the blank such that contact areas between the holding element and the blank remain free of the etching solution.

Abstract: A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a selected area of a p-doped substrate in order to effect etching and structuring of the porous silicon in another area. A device for carrying out the process includes an illuminating system for supporting the etching process and for structuring the porous silicon, in which the illuminating system is selectively aimed during or after the formation of the porous silicon directly at a selected area of p-doped substrate in order to effect etching and structuring of the porous silicon in another area.

Abstract: Disclosed herewithin is a method of fabricating a stent which involves processing a tubular member whereby no connection points to join the edges of a flat pattern are necessary. The method includes the steps of a) removing contaminates from a tubular member, b) coating the outside surface of the tubular member with a photo-sensitive resist material, c) placing the tubular member in an apparatus designed to simultaneously rotate the tubular member while passing a specially configured photographic frame negative between a UV light source and the tubular member, thereby exposing a specified pattern of UV light to the resist coated tubular member, d) exposing the outside surface of the tubular member to a photoresist developer for a specified period of time, e) rinsing the excess developer and uncured resist from the outside surface of the tubular member, f) treating the tubular member with a electro-chemical process to remove uncovered metal.

Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity.

Abstract: Photoelectrochemical etching of p-InP in various nitric acid solutions demonstrates that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a slight decrease with lower potentials. Etch rates exhibit a linear relation with relative light intensity. The values of etch rate for p-InP polarized at -1.0 V vary from 0.07 to 1.24 .mu.m/min. for HNO.sub.3 solutions with concentrations ranging from 1.0 to 5.0 M. Etch rates determined in the 4 M acid range were reproducible within 4%. With acid concentrations greater than 5 M, the etch rates were observed to be inconsistent. XPS studies indicated that these inconsistencies are probably due to the formation of organic nitrogen compounds on the surface of p-InP.

Abstract: A method of processing semiconductor films and layers, especially Group III Nitride films, has been achieved, using laser-enhanced, room-temperature wet etching with dilute etchants. Etch rates of a few hundred .ANG./min up to a few thousand .ANG./min have been achieved for unintentionally doped n-type Group III Nitride films grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electrons generated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell.

Abstract: The invention provides a method for producing semiconductor particles in which a semiconductor material of the type for which particles are desired is placed in an electrolytic solution of an anodic cell. The anodic cell is configured with a cathode also positioned in the electrolytic solution. The electrolytic solution of the anodic cell includes an etchant and a surfactant that is characterized by an attractive affinity for the semiconductor material. To produce semiconductor particles from the semiconductor material, an electrical potential is applied between the semiconductor material in the electrolytic solution and the cathode in the electrolytic solution to anodically etch the semiconductor material. During the etch process, particles of the semiconductor material form and are encapsulated by the surfactant. This method for producing semiconductor particles uses an uncomplicated apparatus and procedure that results in inexpensive and high-volume production of particles of a semiconductor material.

Abstract: The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.

Abstract: Manufacture of a microchannel plate may be improved using photoelectrochemical etching and thin film activation such as CVD and nitriding and oxidizing wall surface portions of pores formed in the substrate. The pore pattern may be changed by oxidizing and etching the substrate prior to activation.