Pattern Or Design Applied By Transfer Patents (Class 216/54)
  • Publication number: 20130075361
    Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.
    Type: Application
    Filed: June 20, 2012
    Publication date: March 28, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yoshiaki KAWAMONZEN, Yasuaki OOTERA, Akiko YUZAWA, Naoko KIHARA, Yoshiyuki KAMATA, Hiroyuki HIEDA, Norikatsu SASAO, Ryosuke YAMAMOTO, Takeshi OKINO, Tomoyuki MAEDA, Takuya SHIMADA
  • Patent number: 8404600
    Abstract: A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open and an opposite end has a sidewall that acts as a seed sidewall. A first material is deposited on the seed sidewall. A second material is deposited on the deposited first material. The deposition of the first and second materials is alternated, thereby forming alternating rows of the first and second materials in the interior volume. The mold and seed layer are subsequently selectively removed. In addition, one of the first or second materials is selectively removed, thereby forming a pattern including free-standing rows of the remaining material. The free-standing rows can be utilized as structures in a final product, e.g., an integrated circuit, or can be used as hard mask structures to pattern an underlying substrate. The mold and rows of material can be formed on multiple levels.
    Type: Grant
    Filed: June 17, 2008
    Date of Patent: March 26, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Patent number: 8382998
    Abstract: A process of manufacturing a three-dimensional relief on a metal surface includes steps of preparing a water transfer label, transferring, roasting, electro-plating and removing. An anti-corrosion pattern ink layer of the water transfer label is first transferred onto a metal surface and then roasted and dried with high temperature for covering a part of the metal, which will not be etched by electro-plating, but the other part of the metal not covered by the pattern ink layer will be etched and colored. Thus, after the pattern ink layer is removed, the part of the metal covered by the pattern ink layer will present a bulgy state and possess original color that is different from the color of the other part of the metal not covered by the pattern ink layer, attaining a three-dimensional visual esthetic sense.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: February 26, 2013
    Inventor: Kuo-Tasi Wang
  • Patent number: 8323520
    Abstract: According to a first aspect of the invention, a method for manufacturing a concave-convex pattern includes the steps of heating a sheet-like member, compressively bonding the sheet-like member, removing the sheet-like member after the compressively bonding, and transferring a pattern shape of a reverse concave-convex pattern layer to a surface of the substrate. The sheet-like member has a concave-convex pattern block on at least one of surfaces thereof, and is given flowability thereto by heating. The reverse concave-convex pattern layer is formed on the one of the surfaces, and continues over two or more concaves of the concave-convex pattern block so that the reverse concave-convex pattern layer meshes at least partially with the concave-convex pattern block. At least the reverse concave-convex pattern layer is left on the substrate. Here, the one of the surfaces has the concave-convex pattern block.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: December 4, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Toshiro Hiraoka
  • Patent number: 8318029
    Abstract: Capsules and similar objects are made from materials having diamond (sp3) lattice structures, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The capsules generally include a hollow shell made of a diamond material that defines an interior region that may be empty or that may contain a fluid or solid material. Some of the capsules include access ports that can be used to fill the capsule with a fluid. Capsules and similar structures can be manufactured by growing diamond on suitably shaped substrates. In some of these methods, diamond shell sections are grown on substrates, then joined together. In other methods, a nearly complete diamond shell is grown around a form substrate, and the substrate can be removed through a relatively small opening in the shell.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: November 27, 2012
    Assignee: Terraspan LLC
    Inventor: Victor B. Kley
  • Patent number: 8303829
    Abstract: A method of fabricating an apparatus of fabricating a flat panel display device and method of fabricating flat panel display device is disclosed, which enables simplification of process by performing a patterning process without a photo process, the method for fabricating an apparatus of fabricating flat panel display device comprising, preparing a master mold including a thin film pattern, coating a liquid-type molding material including oligomer on the master mold, forming a soft mold including a groove provided with a pattern in a shape corresponding to the thin film pattern of the master mold and adhering the soft mold to a mold support plate, wherein the soft mold is adhered to the mold support plate by a covalent bonding in the interface between the oligomer and the mold support plate.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: November 6, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Jin Wuk Kim, Mi Kyung Park
  • Publication number: 20120276483
    Abstract: The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.
    Type: Application
    Filed: March 26, 2012
    Publication date: November 1, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Takafumi UEDA, Toshiharu YANO
  • Patent number: 8293125
    Abstract: A structure having a pattern is manufactured. An elastically deformable process target is elastically deformed in an inplane direction from a first state. A first pattern is formed on the process target deformed. The elastically deformed process target is made close to or returned to the first state, thereby to form a second pattern having a size and a shape at least one of which differs from those of the first pattern.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: October 23, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Aya Imada, Toru Den, Takashi Nakamura
  • Patent number: 8273665
    Abstract: A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: September 25, 2012
    Assignee: International Business Machines Corporation
    Inventors: Charles T. Black, Kathryn Wilder Guarini
  • Patent number: 8252191
    Abstract: The present invention provides a method of sub-micron decal transfer lithography. The method includes forming a first pattern in a surface of a first silicon-containing elastomer, bonding at least a portion of the first pattern to a substrate, and etching a portion of at least one of the first silicon-containing elastomer and the substrate.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: August 28, 2012
    Assignee: Dow Corning Corporation
    Inventors: Ahn Heejoon, Ralph Nuzzo, Anne Shim
  • Publication number: 20120145669
    Abstract: Provided is a process for making a relief printing plate in which a residue on the plate that is generated during engraving can be easily removed and a rinsing liquid for making a relief printing plate that is suitably used for the process for making a relief printing plate. A process for making a relief printing plate includes a step of preparing a relief printing plate precursor having a relief-forming layer, a step of engraving the relief printing plate precursor by exposure, and a step of removing an engraved residue generated by the engraving with a rinsing liquid in this order, wherein the rinsing liquid is an aqueous solution having a pH of 9 or higher, and wherein the engraved residue contains a polymer having a group represented by Formula (I) below.
    Type: Application
    Filed: August 12, 2010
    Publication date: June 14, 2012
    Applicant: FUJIFILM CORPORATION
    Inventors: Hiroshi Tashiro, Keiichi Adachi
  • Patent number: 8177991
    Abstract: The present application relates to a method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate, to a pattern created by such method and to uses of such pattern. Furthermore, the present invention relates to an assembly of layers that can be used for printing.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: May 15, 2012
    Assignee: Sony Corporation
    Inventors: Björn Lüssem, Zoi Karipidou, Jurina Wessels, Akio Yasuda
  • Publication number: 20110303640
    Abstract: A nanoimprint method is provided. A substrate and a master stamp are first provided. The substrate has a first resist layer, a transition layer, and a second resist layer orderly formed thereon. The master stamp has a nanopattern defined therein. The second resist layer is a layer of hydrogen silsesquioxane. The nanopattern of the master stamp is then pressed into the second resist layer to form a nanopattern in the second resist layer at normal temperature which is in a range from about 20 centidegrees to about 50 centidegrees. Finally, the nanopattern of the second resist layer is transferred to the substrate.
    Type: Application
    Filed: December 27, 2010
    Publication date: December 15, 2011
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, YUAN-HAO JIN
  • Patent number: 8070968
    Abstract: According to one embodiment, this invention uses an ultraviolet-curable resin material for pattern transfer containing 80 to 95 wt % of isobornyl acrylate, 1 to 20 wt % of trifunctional acrylate, and 0.5 to 6 wt % of a polymerization initiator.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: December 6, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuyo Umezawa, Seiji Morita, Masatoshi Sakurai
  • Patent number: 8012395
    Abstract: Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: September 6, 2011
    Assignee: Molecular Imprints, Inc.
    Inventors: Kosta S. Selinidis, Byung-Jin Choi, Gerard M. Schmid, Ecron D. Thompson, Ian Matthew McMackin
  • Patent number: 7985686
    Abstract: A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
    Type: Grant
    Filed: March 13, 2006
    Date of Patent: July 26, 2011
    Assignee: International Business Machines Corporation
    Inventors: Charles T. Black, Kathryn Wilder Guarini
  • Publication number: 20110108522
    Abstract: A fluidic device for separating different components of a sample, the fluidic device comprising a microstructured body and porous material covering at least a portion of a surface of the microstructured body.
    Type: Application
    Filed: April 23, 2008
    Publication date: May 12, 2011
    Applicant: AGILENT TECHNOLOGIES, INC.
    Inventor: Gerard Rozing
  • Publication number: 20110076351
    Abstract: A method of forming an imprint template using a substrate having an inorganic release layer and a layer of imprintable medium is disclosed. The method includes using a master imprint template to imprint a pattern into the imprintable medium, causing the imprintable medium to solidify, and etching the imprintable medium and the inorganic release layer to form a pattern in the inorganic release layer.
    Type: Application
    Filed: September 27, 2010
    Publication date: March 31, 2011
    Applicant: ASML NETHERLANDS B.V.
    Inventor: Sander Frederik WUISTER
  • Publication number: 20110068083
    Abstract: According to one embodiment, a method for manufacturing a template for imprinting includes preparing a first template having a device pattern and a plurality of identification patterns, and forming a second template by transferring the device pattern and at lest desired one of the identification patterns to a template substrate.
    Type: Application
    Filed: September 16, 2010
    Publication date: March 24, 2011
    Inventor: Yoshihito KOBAYASHI
  • Patent number: 7875197
    Abstract: Improved methods of forming a patterned self-assembled monolayer on a surface and derivative articles are provided. According to one method, an elastomeric stamp is deformed during and/or prior to using the stamp to print a self-assembled molecular monolayer on a surface. According to another method, during monolayer printing the surface is contacted with a liquid that is immiscible with the molecular monolayer-forming species to effect controlled reactive spreading of the monolayer on the surface. Methods of printing self-assembled molecular monolayers on nonplanar surfaces and derivative articles are provided, as are methods of etching surfaces patterned with self-assembled monolayers, including methods of etching silicon. Optical elements including flexible diffraction gratings, mirrors, and lenses are provided, as are methods for forming optical devices and other articles using lithographic molding.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: January 25, 2011
    Assignee: President and Fellows of Harvard College
    Inventors: George M. Whitesides, Younan Xia, James L. Wilbur, Rebecca J. Jackman, Enoch Kim, Mara G. Prentiss, Milan Mrksich, Amit Kumar, Christopher B. Gorman, Hans Biebuyck, Karl K. Berggren
  • Patent number: 7837459
    Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: November 23, 2010
    Assignee: International Business Machines Corporation
    Inventors: Matthew E. Colburn, Kenneth Raymond Carter, Gary M. McClelland, Dirk Pfeiffer
  • Patent number: 7807065
    Abstract: A processing method for forming a first pattern on a substrate to which a resist is applied includes the steps of pressing an original having a second pattern that has a relief reverse to that of the first pattern, against the resist on the substrate, and irradiating light onto the resist via the original, wherein a size of a concave of the second pattern is greater than a size of a convex of the first pattern corresponding to the concave of the second pattern, and a size of a convex of the second pattern is smaller than a size of a concave of the first pattern corresponding to the convex of the second pattern.
    Type: Grant
    Filed: December 7, 2006
    Date of Patent: October 5, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshinobu Tokita, Hirohisa Ota, Eigo Kawakami, Kazuyuki Kasumi
  • Publication number: 20100213169
    Abstract: According to a first aspect of the invention, a method for manufacturing a concave-convex pattern includes the steps of heating a sheet-like member, compressively bonding the sheet-like member, removing the sheet-like member after the compressively bonding, and transferring a pattern shape of a reverse concave-convex pattern layer to a surface of the substrate. The sheet-like member has a concave-convex pattern block on at least one of surfaces thereof, and is given flowability thereto by heating. The reverse concave-convex pattern layer is formed on the one of the surfaces, and continues over two or more concaves of the concave-convex pattern block so that the reverse concave-convex pattern layer meshes at least partially with the concave-convex pattern block. At least the reverse concave-convex pattern layer is left on the substrate. Here, the one of the surfaces has the concave-convex pattern block.
    Type: Application
    Filed: February 24, 2010
    Publication date: August 26, 2010
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Toshiro HIRAOKA
  • Patent number: 7699996
    Abstract: A method for simultaneously forming multiple line-widths, one of which is less than that achievable employing conventional lithographic techniques. The method includes providing a structure which includes a memory layer and a sidewall image transfer (SIT) layer on top of the memory layer. Then, the SIT layer is patterned resulting in a SIT region. Then, the SIT region is used as a blocking mask during directional etching of the memory layer resulting in a first memory region. Then, a side wall of the SIT region is retreated a retreating distance D in a reference direction resulting in a SIT portion. Said patterning comprises a lithographic process. The retreating distance D is less than a critical dimension CD associated with the lithographic process. The SIT region includes a first dimension W2 and a second dimension W3 in the reference direction, wherein CD<W2<2D<W3.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: April 20, 2010
    Assignee: International Business Machines Corporation
    Inventors: Toshiharu Furukawa, John G. Gaudiello, Mark Charles Hakey, David Vaclav Horak, Charles William Koburger, III
  • Patent number: 7686970
    Abstract: A method for manufacturing a working template for use in imprint lithography is disclosed, which in an embodiment, involves contacting a first target region of an imprintable medium on a working template substrate with a master template to form a first imprint in the medium, the imprint defining a part of a working template pattern, separating the master template from the imprinted medium, contacting a second target region of the medium with the master template to form a second imprint in the medium, the second imprint defining a further part of the working template pattern, and separating the master template from the imprinted medium.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: March 30, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Aleksey Yurievich Kolesnychenko, Helmar Van Santen, Yvonne Kruijt-Stegeman
  • Patent number: 7682981
    Abstract: The present invention is a method of applying a topographical surface to a part such as a substrate without the need for low temperature softening of that part while retaining high aspect ratios and densely packed features in that topography. A substrate, selected for its ability to be processed at a given desired temperature, has a layer of material applied to its surface. This layer is selected, among other reasons, for its ability to be molded. Typically, it is expected that the substrate will be able to withstand the higher temperatures of semiconductor post-processing whereas the applied layer will be moldable at low temperatures. This combination enables low cost embossing of a topography into this surface layer. The present invention comprises means to transfer this topography from the low temperature material into the higher temperature substrate.
    Type: Grant
    Filed: January 27, 2006
    Date of Patent: March 23, 2010
    Assignee: Contour Semiconductor, Inc.
    Inventor: Daniel Robert Shepard
  • Publication number: 20090302001
    Abstract: The present invention is directed to methods for patterning surfaces using contact printing and pastes, and products formed therefrom.
    Type: Application
    Filed: June 11, 2009
    Publication date: December 10, 2009
    Applicants: Nano Terra Inc., Merck Patent GmbH
    Inventors: Brian T. MAYERS, Jeffrey Carbeck, Wajeeh Saadi, George M. Whitesides, Ralf Kugler, Monika Kursawe, Johannes Canisius
  • Patent number: 7597813
    Abstract: A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; disposing a second support substrate on the first support substrate so that the metal layer is interposed between the first and second support substrates; pouring a resin material in a fluid state between the first and second support substrates; curing the resin material to form a resin substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the resin substrate.
    Type: Grant
    Filed: October 2, 2007
    Date of Patent: October 6, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Toshihiko Kaneda, Satoshi Kimura, Hidemichi Furihata, Takeshi Kijima
  • Patent number: 7597814
    Abstract: A structure is provided that is formed with a template defining a pattern having nanoscale features. The template may be positioned on a substrate and include a resist layer having openings formed therein, where the template is configured to accommodate the controlled assembly of nanoscale objects.
    Type: Grant
    Filed: March 23, 2004
    Date of Patent: October 6, 2009
    Assignee: Hewlett Packard Development Company, L.P.
    Inventors: James W. Stasiak, Kevin Francis Peters, Pavel Kornilovich
  • Patent number: 7586047
    Abstract: An object of the present invention is to provide a method for manufacturing a porous material in which complicated and fine through portions, recessed portions, and the like have been patterned. It is to provide a patterned porous molded product or nonwoven fabric, in which a plated layer has been selectively formed on the surfaces of the through portions and the recessed portions. With the invention, a mask having through portions in a pattern is placed on at least one side of the porous molded product or the nonwoven fabric. A fluid or a fluid containing abrasive grains is sprayed from above the mask, thereby to form through portions or recessed portions, or both of them, to which the opening shape of each through portion of the mask has been transferred, in the porous molded product or the nonwoven fabric.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: September 8, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Fumihiro Hayashi, Yasuhito Masuda, Yasuhiro Okuda
  • Publication number: 20090212012
    Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
    Type: Application
    Filed: February 25, 2009
    Publication date: August 27, 2009
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Cynthia B. Brooks, Dwayne L. LaBrake, Niyaz Khusnatdinov, Michael N. Miller, Sidlgata V. Sreenivasan, David James Lentz, Frank Y. Xu
  • Patent number: 7547504
    Abstract: The present invention features a method of patterning a substrate that includes forming, on the substrate, a first layer having a first pattern and selectively shifting in tone, as well as along a first direction, a subsequent pattern formed into the same layer that corresponds to the first pattern. To that end, one method of the present invention includes generating into the first layer, a second pattern having a shape inverse to the first pattern. A third pattern is then transferred into the first layer that has a shape inverse to the second pattern.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: June 16, 2009
    Assignee: Molecular Imprints, Inc.
    Inventor: Sidlgata V. Sreenivasan
  • Patent number: 7523549
    Abstract: A method of fabricating a flexible circuit interconnect comprising a conductive pattern on a flexible substrate comprising layers of different components having different coefficients of thermal expansion, including exposing the flexible substrate sequentially to different temperature regimes tending to differentially expand the flexible circuit components, dimensionally stabilizing the flexible substrate with an added stainless steel layer only during said exposing to different temperature regimes, and removing stainless steel of the added layer from the flexible circuit after exposing the flexible circuit.
    Type: Grant
    Filed: May 9, 2005
    Date of Patent: April 28, 2009
    Assignee: Magnecomp Corporation
    Inventors: Christopher Schreiber, Chris Dunn
  • Patent number: 7473645
    Abstract: The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a masking feature projecting from a substrate. The feature has a top, opposing sidewalls, and a base. A layer comprising SixCyFz is deposited over the feature, where “x” is from 0 to 0.2, “y” is from 0.3 to 0.9, and “z” is from 0.1 to 0.6. The SixCyFz—comprising layer and upper portions of the feature opposing sidewalls are etched effective to laterally recess such upper portions proximate the feature top relative to lower portions of the feature opposing sidewalls proximate the feature base. After such etching of the SixCyFz—comprising layer and such etching of upper portions of the feature sidewalls, the substrate is etched using the masking feature as a mask.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: January 6, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Mirzafer Abatchev, Krupakar M. Subramanian
  • Patent number: 7462292
    Abstract: A method of fabricating a silicon carbide imprint stamp is disclosed. A mold layer has a cavity formed therein. A spacer is formed in the cavity to reduce a first feature size of the cavity. A casting process is used to form a feature and a foundation layer connected with the feature. The spacer operatively reduces the first feature size of the feature to a second feature size that is less than the lithography limit. The foundation layer and the feature are unitary whole made from a material comprising silicon carbide (SiC), a material that is harder than silicon (Si) alone. Consequently, the silicon carbide imprint stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the silicon carbide imprint stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: December 9, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Heon Lee
  • Patent number: 7455788
    Abstract: A nanoscale lithographic method in which a reusable conductive mask, having a pattern of conductive surfaces and insulating surfaces, is positioned upon a substrate whose surface contains an electrically responsive resist layer over a buried conductive layer. When an electric field is applied between the conductive mask and buried conductive layer, the resist layer is altered in portions adjacent the conductive areas of the mask. Selective processing is performed on the surface of the substrate, after mask removal, to remove portions of the resist layer according to the pattern transferred from the mask. The substrate may be a target substrate, or the substrate may be utilized for a lithographic masking step of another substrate. In one aspect of the invention the electrodes to which the charge is applied are divided, such as into a plurality of rows and columns wherein any desired pattern may be created without the need to fabricate specific masks.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: November 25, 2008
    Assignee: The Regents of the University of California
    Inventor: Yong Chen
  • Patent number: 7449123
    Abstract: A nanoimprint lithography method of fabricating a nanoadhesive includes steps of (a) preparing a substrate and a transfer stamp, said transfer stamp having a transfer face and nanometer-scale features formed on said transfer face, said nanometer-scale features having a plurality of convexities and concavities, said substrate having an etched layer; (b) proceeding a staining process to enable either of said convexities and concavities to be stained with a photoresist; (c) proceeding a transfer process to enable said nanometer-scale features to touch said etched layer to transfer said photoresist onto said etched layer; and (d) proceeding an etching process to enable parts of said etched layer that are not stained with the photoresist to be each etched for a predetermined depth. As the steps indicated above, the nanoadhesive can be produced with mass production and low cost.
    Type: Grant
    Filed: November 3, 2005
    Date of Patent: November 11, 2008
    Assignee: Contrel Technology Co., Ltd.
    Inventors: Chih-Yu Chao, Wen-Jiunn Hsieh
  • Patent number: 7422651
    Abstract: A method for applying a pattern to a target surface includes the steps of applying a coating of membrane material over a selected portion of a substrate. The substrate imparts a pattern to the membrane material corresponding to a pattern to be applied to the target surface. A support member is positioned in contact with an outer portion of the membrane material. The support member has a higher rigidity than the membrane material. The method may also combine the steps of curing the membrane material to bond the support member to the membrane. When bonded to the membrane, the support member maintains at least a portion of the membrane in a substantially taut condition to prevent a portion of the membrane from folding onto itself. The membrane is then employed to impart the pattern to the target surface.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: September 9, 2008
    Assignee: Surface Logix Inc.
    Inventors: Aaron Raphel, Enoch Kim, Emanuele Ostuni, Gregory Kirk, Olivier Schueller
  • Patent number: 7419611
    Abstract: A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: September 2, 2008
    Assignee: International Business Machines Corporation
    Inventors: Richard Anthony DiPietro, Mark Whitney Hart, Frances Anne Houle, Hiroshi Ito
  • Patent number: 7399422
    Abstract: A system and method form a nanodisk that can be used to form isolated data bits on a memory disk. The imprint stamp is formed from first and second overlapping patterns, where the patterns are selectively etched. The selective etching leaves either pits or posts on the imprint stamp. The pits or posts are imprinted on the memory disk, leaving either pits or posts on the memory disk. The pits or posts on the memory disk are processed to form relatively small and dense isolated data bits. Instability of the isolated data bits caused by outside magnetic and thermal influences is substantially eliminated.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: July 15, 2008
    Assignee: ASML Holding N.V.
    Inventor: Harry Sewell
  • Patent number: 7371331
    Abstract: A method is provided for creating a patterned monolayer on a substrate. First, organic molecules are prepared that have self-assembling properties. These molecules are applied to an aligning substrate. Then, the aligning surface is applied to the substrate, then separated from the substrate, leaving ordered patterns of the organic molecules on the substrate.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: May 13, 2008
    Inventors: Valerie J Marty, Tom Etheridge
  • Publication number: 20080099433
    Abstract: In the automatic positioning/engraving method for a laser engraving machine, a pattern to be used for engraving is framed with a quadrilateral frame, then a first and a second coordinate position of two mutually opposite ends of a diagonal line of the quadrilateral frame are obtained by measuring; a pen carriage on the laser engraving machine is moved to be above a workpiece to position a first positioning point in coincidence with the first coordinate position and a second positioning point in coincidence with the second coordinate position; and a processor is used to calculate to decide a center between the first and the second positioning points according to the coordinate values of the first and the second positioning points, and a driving unit is used to move the pen carriage to the center for starting pattern engraving.
    Type: Application
    Filed: October 30, 2006
    Publication date: May 1, 2008
    Inventors: Hans Huang, Jeff Lee
  • Publication number: 20080017606
    Abstract: A method for forming a surface energy difference bank includes: providing a material for forming a self-assembled molecular film onto a contact region of a stamps the contact region being formed of a plurality of apical faces of a plurality of elastic elements protruding out from a base part of the stamp; and transferring the material from the contact region to an object face by contacting the contact region with the object face so as to obtain the surface energy difference bank that is composed of a plurality of dots on the object face, the plurality of the dots being made of the self assembled molecular film and corresponding to the plurality of elastic elements.
    Type: Application
    Filed: July 17, 2007
    Publication date: January 24, 2008
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Shunpu LI, Christopher NEWSOME, Daping CHU
  • Publication number: 20070295688
    Abstract: A fabricating method and apparatus of a thin film pattern improves the reliability of forming the thin film pattern by a resist printing method. The apparatus includes a print roller device of a roll shape around which a blanket is wound; a spray device located around the print roller device for spraying an etch resist solution to the blanket; and a print plate of an engraved shape where a groove of a desired thin film shape and a projected part except the groove are formed, and the etch resist solution has a surfactant inclusive of an ethylene oxide fluorinated polymer material.
    Type: Application
    Filed: December 15, 2006
    Publication date: December 27, 2007
    Inventor: Jin Wuk Kim
  • Patent number: 7309446
    Abstract: Capsules and similar objects are made from materials having diamond (sp3) lattice structures, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The capsules generally include a hollow shell made of a diamond material that defines an interior region that may be empty or that may contain a fluid or solid material. Some of the capsules include access ports that can be used to fill the capsule with a fluid. Capsules and similar structures can be manufactured by growing diamond on suitably shaped substrates. In some of these methods, diamond shell sections are grown on substrates, then joined together. In other methods, a nearly complete diamond shell is grown around a form substrate, and the substrate can be removed through a relatively small opening in the shell.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: December 18, 2007
    Assignee: Metadigm LLC
    Inventor: Victor B. Kley
  • Patent number: 7291563
    Abstract: The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a masking feature projecting from a substrate. The feature has a top, opposing sidewalls, and a base. A layer comprising SixCyFz is deposited over the feature, where “x” is from 0 to 0.2, “y” is from 0.3 to 0.9, and “z” is from 0.1 to 0.6. The SixCyFz-comprising layer and upper portions of the feature opposing sidewalls are etched effective to laterally recess such upper portions proximate the feature top relative to lower portions of the feature opposing sidewalls proximate the feature base. After such etching of the SixCyFz-comprising layer and such etching of upper portions of the feature sidewalls, the substrate is etched using the masking feature as a mask.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: November 6, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Mirzafer Abatchev, Krupakar M. Subramanian
  • Patent number: 7291278
    Abstract: An electrode forming method with an excellent yield, includes: (a) forming an adhesion preventing member having a predetermined pattern on a base member: (b) forming a conductive layer on the base member and the adhesion preventing member; and (c) forming an electrode having a predetermined pattern by removing the conductive layer on the adhesion preventing member in a state in which the adhesion preventing member is disposed on the base member. Adhesion between the adhesion preventing member and the conductive layer is smaller than adhesion between the base member and the conductive layer.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: November 6, 2007
    Assignee: Seiko Epson Corporation
    Inventors: Tsuyoshi Kaneko, Tetsuo Hiramatsu
  • Patent number: 7279113
    Abstract: A method of forming a lithographic template having an elastomer layer positioned between a body and an imprinting layer, the imprinting layer having a pattern formed thereon.
    Type: Grant
    Filed: December 9, 2005
    Date of Patent: October 9, 2007
    Assignee: Molecular Imprints, Inc.
    Inventors: Michael P. C. Watts, Ronald D. Voisin, Sidlgata V. Sreenivasan
  • Patent number: 7273564
    Abstract: A method of fabricating a flat panel display device including: coating an etch-resist on a thin film; forming a soft mold having a groove and a protrusion for patterning the thin film; treating an end surface of the protrusion; applying the soft mold to the etch-resist to form an etch-resist pattern; separating the soft mold from the etch-resist pattern; and etching the thin film by using the etch-resist pattern to form a thin film pattern.
    Type: Grant
    Filed: October 14, 2004
    Date of Patent: September 25, 2007
    Assignee: LG.Philips LCD Co., Ltd.
    Inventor: Jin Wuk Kim
  • Publication number: 20070212488
    Abstract: A pattern transfer method includes performing positioning between a transfer position of a pattern forming surface of a transfer original plate on which a pattern to be transferred is formed and a transferred position of a transferred surface of a transferred substrate to which the pattern is to be transferred; contacting the pattern forming surface with the transferred surface; and partly correcting the positional deviation between the transfer position of the pattern forming surface and the transferred position of the transferred surface in the in-plane direction, after the positioning is performed.
    Type: Application
    Filed: September 18, 2006
    Publication date: September 13, 2007
    Inventor: Kenichi Murooka