Abstract: Functionalized F-POSS compounds comprising synthetic blends of at least two feedstocks that produce a distribution of fluorinated polyhedral oligomeric silsesquioxane molecule structures and/or functional groups.

Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.

Abstract: An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of the workpiece while etchant is supplied.

Abstract: The present patent application discloses a novel sol-gel process to synthesize a nano-porous solid carbon material—suitable for use in electrodes in energy storage applications—from a combination of liquid reagents that undergo a polymerization reaction to form a matrix.

Abstract: A glass article including: at least one anti-glare surface having haze, distinctness-of-image, surface roughness, and uniformity properties, as defined herein. A method of making the glass article includes, for example: depositing deformable particles on at least a portion of a glass surface of the article; causing the deposited deformable particles on the surface to deform and adhere to the surface; and contacting the surface having the adhered particles with an etchant to form the anti-glare surface. A display system that incorporates the glass article, as defined herein, is also disclosed.

Abstract: A copolymer composition and a method of processing a substrate to form line space features thereon are provided.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: The present patent application discloses a novel sol-gel process to synthesize a nano-porous solid carbon material—suitable for use in electrodes in energy storage applications—from a combination of liquid reagents that undergo a polymerization reaction to form a matrix.

Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.

Abstract: A method for forming pattern on substrate comprises steps of: providing a metal substrate; amorphousizing the metal substrate to from an amorphous pattern layer in the metal substrate; etching the metal substrate and forming an etching portion in the surface of the metal substrate which is not covered with the amorphous pattern layer. The article manufactured by the method is also provided.

Abstract: A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.

Abstract: A substrate support apparatus for a plasma processing system includes a layer of dielectric material having a top surface and a bottom surface. The top surface is defined to support a substrate in exposure to a plasma. The substrate support apparatus also includes a number of optical fibers each having a first end and a second end. The first end of each optical fiber is defined to receive photons from a photon source. The second end of each optical fiber is oriented to project photons received from the photon source onto the bottom surface of the layer of dielectric material.

Abstract: Embodiments described herein may take the form of a textile fabric, including: a first region defined by a first plurality of textile fibers; a second region adjacent the first region and being formed from a second plurality of textile fibers and a hot melt material adjacent the second plurality of textile fibers; wherein the first region is free of hot melt material. Other embodiments may take the form of a method for fabricating a textile product, including the operations of: applying heat to a textile having associated hot melt fibers, thereby melting the hot melt fibers; modifying a mechanical property of a portion of the textile by introducing a solvent to the textile; and stopping an action of the solvent on the textile when the mechanical property reaches a target.

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ?20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: A method includes forming a chemical guide layer above a process layer. A template having a plurality of elements is formed above the process layer. The chemical guide layer is disposed on at least portions of the process layer disposed between adjacent elements of the template. A directed self-assembly layer is formed over the chemical guide layer. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer as an etch mask.

Abstract: To provide an etchant for copper oxide, control of the etching rate, and etching method using the same for enabling exposed portions to be selectively etched against unexposed portions in the case of performing exposure with laser light using an oxide of copper as a heat-reactive resist material, an etchant of the invention is an etchant for copper oxide to selectively remove a copper oxide of a particular valence from a copper oxide-containing layer containing copper oxides of different valences, and is characterized by containing at least an amino acid, a chelating agent and water, where a weight percentage of the amino acid is higher than that of the chelating agent, and pH thereof is 3.5 or more.

Abstract: In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.

Abstract: A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.

Abstract: A copolymer composition and a method of processing a substrate to form line space features thereon are provided.

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract: Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A method for manufacturing graphene oxide nanoplatelets and derivative products and the graphene oxide nanoplatelets obtained, comprising two distinct phases, a first phase for obtaining an intermediate material consisting of carbon nanofilaments, each one having a structure comprising continuous ribbon of graphitic material with a small number of stacked monoatomic graphene layers and spirally rolled around and along the main axis of said nanofilaments, and a second phase wherein said carbon nanofilaments are subjected to a high-temperature treatment in order to clean said filaments and increase their degree of crystallinity. Once these nanofilaments are treated, a chemical etching is performed on them comprising an oxidation that causes the fragmentation of the carbon nanofilaments and starts a cleaving method that is completed by physical means in order to obtain graphene oxide nanoplatelets.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Provided is an ion exchange resin volume reduction apparatus in which the ignition of plasma is facilitated and the plasma is prevented from extinguishing. A volume reduction apparatus according to aspects of the present invention includes a stage carrying thereon a resin to be treated, a CCP power source, and an ICP power source. The volume reduction apparatus according to a certain aspect of the present invention is provided with a supply mechanism, and the CCP power source continues operating when the resin to be treated is supplied in a depressurized state to a vacuum vessel. In the volume reduction apparatus according to a certain aspect of the present invention, the CCP power source continues operating when a gas condition under which gas is supplied into the vacuum vessel is changed.

Abstract: A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same, The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A diblock copolymer blend containing a unique combination of an ordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer and a disordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer is provided. Also provided are substrates treated with the diblock copolymer blend.

Abstract: A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

Abstract: A method of patterning a substrate is described. The method includes preparing a film stack on a substrate, wherein the film stack comprises a spin-on layer, and heating the spin-on layer to a cure temperature less than a thermal decomposition temperature of the spin-on layer and exceeding about 200 degrees C. to increase mechanical strength of the spin-on layer. The method further includes forming a feature pattern without pattern collapse in the spin-on layer, wherein the feature pattern is characterized by a critical dimension less than 35 nm (nanometers) and an aspect ratio relating a height of the feature pattern to the critical dimension exceeding 5:1.

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.

Abstract: This invention provides an inexpensive and rapid method for fabricating a high-anisotropic-etch ratio, shaped glass structures using a novel photosensitive glass composition. Structures of the photosensitive glass may include micro-channels, micro-optics, microposts, or arrays of hollow micro-needles. Furthermore, such shaped glass structures can be used to form a negative mold for casting the shape in other materials.

Abstract: To make an arrangement so as not to give any damage to the central part of a substrate during the operation for removing unnecessary film coated on the outer peripheral part of the substrate. The stage is provided therein with a refrigerant chamber 41 as a heat absorber and a refrigerant such as water is filled in the chamber. A wafer 90 is contacted with and supported on the support surface 10a of the stage 10. A reactive gas for removing unnecessary film is supplied the outer periphery of the wafer 90 through a reactive gas jet port 30b while heating the outer periphery of the wafer 90. On the other hand, the area inside the outer peripheral part of the wafer 90 is heat-absorbed by the heat absorber.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.

Abstract: A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure.

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract: A positive-working lithographic printing plate precursor is disclosed which comprises on a support having a hydrophilic surface or which is provided with a hydrophilic layer a heat and/or light-sensitive coating including an infrared absorbing agent and a compound including a benzoxazine group.

Abstract: The present invention discloses a method for treating at least a portion of at least one surface of a glass article which comprises the following steps, whatever their order: dry application of at least one high-pH solid material on said portion; heating of said glass article to a temperature at least equal to the melting temperature of the said high-pH solid.

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract: A nanoparticle including a Group 3 atom-containing shell. In various embodiments, the nanoparticle includes a metal or metal catalyst-containing core, or a substantially metal-free core. In other embodiments, the nanoparticle shell is hollow. A method of preparing the nanoparticle and methods of using such particles are also provided.