Abstract: A nanocomposite electrode and supercapacitor thereof are disclosed. The nanocomposite electrode includes a substrate, at least one binding compound, at least one carbonaceous compound, and vanadium doped spinel ferrite nanoparticles (V-SFNPs). The V-SFNPs have a formula of CoxNi1-xVyFe2-yOz, wherein x=0.1-0.9, y=0.01-0.10, and z=3-5. The substrate is at least partially coated on a first side with a mixture comprising the V-SFNPs, the at least one binding compound, and the at least one carbonaceous compound. Two of the nanocomposite electrodes are combined to form the supercapacitor.

Abstract: Carbon opals, a form of colloidal crystal, are composed of ordered two-dimensional or three-dimensional arrays of Monodispersed Starburst Carbon Spheres (MSCS). Methods for producing such carbon opals include oxidizing as-synthesized MSCS, for example by heating in air, to increase surface charge. Such oxidation is believed to decrease settling rates of a colloidal suspension, enabling formation of an ordered colloidal crystal. Inverse opals, composed of any of a wide variety of materials, and based on a carbon opal template, have a reciprocal structure to a carbon opal. Inverse opals are formed by methods including: forming a carbon opal as described, impregnating a desired material into pores in the carbon opal to produce a hybrid structure, and removing the carbon portion from the hybrid structure.

Abstract: A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.

Abstract: The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.

Abstract: Methods of preparing graphene nano ribbons may include forming a graphene sheet on at least one surface of a substrate, forming a plasma mask having a nano pattern on the graphene sheet, and forming a nano pattern on the graphene sheet by plasma treating a stack structure on which the plasma mask is formed.

Abstract: This invention presents a method for the fabrication of periodic nanostructures on polymeric surfaces by means of plasma processing, which method comprises the following steps: (i) provision of a homogeneous organic polymer (such as PMMA, or PET, or PEEK, or PS, or PE, or COC) or inorganic polymer (such as PDMS or ORMOCER); (ii) exposure of the polymer to an etching plasma such as oxygen (O2) or sulphur hexafluoride (SF6) or a mixture of oxygen (O2) and sulphur hexafluoride (SF6), or mixtures of etching gases with inert gases such as any Noble gas (Ar, He, Ne, Xe).

Abstract: A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.

Abstract: The present invention, in part, relates to a carbon black having a) a nitrogen BET surface area (BET) of from about 600 m2/g to about 2100 m2/g, b) a CDBP value in mL/100 g of from about (?2.8+(b*BET)) to about (108+(b*BET)), where b is 0.087 and BET is expressed in m2/g, and c) an apparent density (p, g/cm3) of at least about 0.820+q*BET, where q=?2.5×10?4, as determined at a compressive force (P) of 200 kgf/cm2 on dry carbon black powder. Energy storage devices, such as electrochemical double layer capacitors (EDLC's), containing the carbon black are also disclosed. Methods for making the carbon blacks and EDLC's made with them are also provided.

Abstract: A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member.

Abstract: An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled, the etching method includes supplying a high frequency power which is set such that a great amount of ion energy is distributed within a range smaller than ion energy distribution at which an etching yield of the first polymer is generated and larger than or equal to ion energy distribution at which an etching yield of the second polymer is generated, and supplying a predetermined gas, generating plasma from the supplied gas by the high frequency power, and etching the periodic pattern on a processing target object by using the generated plasma.

Abstract: A method of removing carbon materials, preferably amorphous carbon, from a substrate includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the carbon material coated substrate. The liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. In preferred embodiments, amorphous carbon is selectively removed as compared to a silicon oxide (e.g., silicon dioxide) and/or silicon nitride.

Abstract: Means, apparatus, systems, and/or methods are described for forming improved rigid or flexible semi-transparent imprinting templates. These templates can be used to produce patterning masks having improved resolution that do not require plasma etching for residue removal. The methods and apparatus are compatible with roll-to-roll manufacturing processes and enable roll-to-roll formation of a wide range of metal patterned films.

Abstract: The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance.

Abstract: A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.

Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.

Abstract: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.

Abstract: A method for forming a semiconductor device. A substrate having thereon at least one small pattern and at least one large pattern is provided. A sacrificial layer is deposited to cover the small pattern and the large pattern. A chemical mechanical polishing is performed to planarize the sacrificial layer. The sacrificial layer is then dry etched to a thickness that is smaller than a height of the small pattern and the large pattern, thereby revealing an oxide hard mask of the small pattern and the large pattern. The oxide hard mask is then selectively removed.

Abstract: A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: The present invention generally relates to a method of forming a magnetic head while ensuring residues do not negatively impact the magnetic head. In particular, when performing a RIE process to remove DLC, oxygen gas can leave residues that will negatively impact the RIE process performed on the next substrate to enter the chamber. By utilizing CO2 rather than O2, the residues will not be created and therefore will not impact processing of the next substrate that enters the chamber.

Abstract: A magnetic recording medium has magnetic patterns formed of a patterned ferromagnetic layer, and a non-magnetic layer including a component of the ferromagnetic layer and separating the magnetic patterns, in which a thickness “a” of the non-magnetic layer and a thickness “b” of the magnetic patterns satisfy a relationship of: a<b.

Abstract: A method for manufacturing a glass stamper includes the following steps. First, a diamond film is formed on a substrate. A resist is applied onto the diamond film and a pattern is formed by performing electron beam lithography and development. The diamond film is etched with any one of oxygen and Ar gas using the pattern on the resist as a mask, thereby transferring the pattern to the diamond film. The resist and the substrate are removed to fabricate a diamond mold. Then, a glass stamper is manufactured by glass molding using the diamond mold.

Abstract: The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

Abstract: Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Abstract: The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises: a. depositing a polymeric fill matrix comprising at least one latent photoacid generator; b. curing the polymeric fill matrix; c. depositing a layer of photosensitive material directly onto the cured polymeric fill matrix; and d. forming a pattern with at least one opening in the layer of photosensitive material with lithography.

Abstract: A method of processing a graphene sheet material includes irradiating UV ray to a graphene sheet material in an atmosphere containing a first substance to inactivate an edge of the graphene sheet material by substituting an end group connected to the edge of the graphene sheet material with more stable functional group generated from the first substance, and irradiating UV ray to a surface of the graphene sheet material in an atmosphere containing a second substance containing oxygen to activate the second substance, and oxidize and remove a graphene sheet contained in the graphene sheet material sequentially from a surface side.

Abstract: An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

Abstract: Provided is a process for manufacturing a diamond like carbon layer. The process for manufacturing the diamond like carbon layer includes, without limitation, forming a layer of diamond like carbon over a substrate, and reactive ion etching the layer of diamond like carbon.

Abstract: A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.

Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.

Abstract: Described is a method for the selective etching of single walled carbon nanotubes with CO2 where nanotubes of small diameters are removed.

Abstract: Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.

Abstract: The present invention, in part, relates to a carbon black having a) a nitrogen BET surface area (BET) of from about 600 m2/g to about 2100 m2/g, b) a CDBP value in mL/100 g of from about (?2.8+(b*BET)) to about (108+(b*BET)), where b is 0.087 and BET is expressed in m2/g, and c) an apparent density (p, g/cm3) of at least about 0.820+q*BET, where q=?2.5×10?4, as determined at a compressive force (P) of 200 kgf/cm2 on dry carbon black powder. Energy storage devices, such as electrochemical double layer capacitors (EDLC's), containing the carbon black are also disclosed. Methods for making the carbon blacks and EDLC's made with them are also provided.

Abstract: A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

Abstract: Methods and systems for modifying a surface of a polymer with a shielded plasma are provided. The surface may be modified to create a surface with increased crosslinking and/or a particular mechanical property, such as a coefficient of friction. A shielding arrangement is used to modify the plasma to which the polymer surface is exposed, thereby providing a surface with the desired mechanical properties. In one aspect, a single source that provides multiple species of plasma particles is advantageously used instead of having to switch or move in multiple sources. The extent of crosslinking is evaluated using a surface force microscope to determine a frictional property that is correlated to the crosslinking, e.g., via calibrated values determined from reference surfaces.

Abstract: Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.

Abstract: The present invention is generally directed toward a regiofunctional carbon nanotube beam structures and a method the same. The regiofunctional carbon nanotube beam structures contain chemical moieties attached selectively to the ends and/or the sidewalls of the nanotube which differentiate the physico-chemical properties of the nanotube ends from the physico-chemical of the sidewalls to enable directed self-assembly. The method comprises the steps including opening carbon nanotube ends, protecting those ends from sidewall functionalization chemistry by chemically differentiating the open carbon nanotube ends from the nanotube sidewall, functionalizing the sidewalls, functionalizing the ends of the carbon nanotube and attaching crown to ends.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses, and partially etching the magnetic recording layer in areas not covered with patterns of the resist used as masks by ion beam etching using a mixed gas of He and N2 as well as modifying a remainder of the magnetic recording layer to leave behind a nonmagnetic layer having a reduced thickness.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses, and partially etching the magnetic recording layer in areas not covered with patterns of the resist used as masks by ion beam etching using a mixed gas of He and N2 as well as modifying a remainder of the magnetic recording layer to leave behind a nonmagnetic layer having a reduced thickness.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an oxidation inhibiting layer, a hard mask layer includes carbon on a substrate, coating the hard mask layer with a resist, transferring patterns of protrusions and recesses to the resist by imprinting to form resist patterns, sequentially performing etching of the hard mask layer using the resist patterns as masks, etching of the oxidation inhibiting layer, and etching and/or magnetism deactivation of the magnetic recording layer to form patterns of the magnetic recording layer, and sequentially performing stripping of the resist patterns, stripping of the hard mask layer and stripping of the oxidation inhibiting layer, in which ion beam etching is used for stripping the oxidation inhibiting layer.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a hard mask and a resist on a magnetic recording layer, imprinting a stamper on the resist to transfer patterns of protrusions and recesses, removing resist residues left in the recesses of the patterned resist, etching the hard mask using the patterned resist as a mask to transfer the patterns of protrusions and recesses, stripping the resist, and performing ion beam etching to remove the remaining hard mask and to modify a surface of the magnetic recording layer uncovered with the remaining hard mask.

Abstract: The present invention relates to a micro/nano imprint lithography technique and in particular, to a stamp that is used in an UV-micro/nano imprint lithography process or thermal micro/nano imprint lithography process and a method for fabricating the stamp. The method for fabricating a stamp for micro/nano imprint lithography of the present invention includes i) depositing a thin film of diamond-like carbon on a substrate, ii) applying resist on the diamond-like carbon thin film, iii) patterning the resist, iv) etching the diamond-like carbon thin film by using the resist as a protective layer, and v) removing the resist.

Abstract: A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask.

Abstract: A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.

Abstract: Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Abstract: The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.

Abstract: A method for manufacturing carbon nanotubes with a desired length includes the steps of: providing an array of carbon nanotubes; placing a mask having at least an opening defined therein on the array of carbon nanotubes, with at least one portion of the array of carbon nanotubes being at least partially exposed through a corresponding opening of the mask; forming a protective film on at least one exposed portion of the array of carbon nanotubes; removing the mask from the array of the carbon nanotubes, with the carbon nanotubes being compartmentalized into at least a first portion covered by the protective film and at least one uncovered second portion; breaking/separating the first portion from the second portion of the array of the carbon nanotubes using a chemical method, thereby obtaining at least a carbon nanotube segment with a protective film covered thereon; and removing the protective film from the carbon nanotube segment.