Abstract: This optical-fiber fusion-splicing device includes: a first heating device (12); a second heating device (13); and a CPU (14) which controls the first heating device (12) and the second heating device (13), wherein the CPU (14) stops heating of the second heating device (13) if heating of the first heating device (12) is started during heating in the second heating device (13), and resumes the heating of the second heating device (13) if the heating of the first heating device (12) is ended, and sets a heating condition after resumption of heating in the second heating device (13), based on at least an interruption time of heating or a change in temperature during heating interruption in the second heating device (13).

Abstract: An optical-fiber fusion-splicing device includes: a first heating device in which a fusion-splicing operation of heating and fusing abutting parts of at least a pair of optical fibers with end faces brought into contact with each other is performed; a second heating device in which a reinforcing operation of heating and shrinking a heat-shrinkable resin which covers a site where the optical fibers are fusion-spliced to each other is performed; and a CPU which controls the first heating device and the second heating device, wherein the CPU preheats a heater of the second heating device so as to reach a predetermined first temperature, if the CPU receives a heating end signal from the first heating device, and thereafter, heats the heater of the second heating device so as to reach a second temperature higher than the first temperature, if the CPU receives a reinforcement start signal.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture includes a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: This reinforcement device includes: a first heater (9A) on which a fusion-spliced section of an optical fiber covered with a protective member is disposed and which heats a central portion of the protective member at a first temperature (T1); second heaters (9B) which are respectively provided on both sides of the first heater (9A) along a longitudinal direction of the optical fiber and respectively heat both end portions of the protective member at a second temperature (T2); and a CPU (14) which performs energization control for heating each of the first heater (9A) and the second heaters (9B), wherein the CPU (14) makes an energizing time of the first heater (9A) and an energizing time of each of the second heaters (9B) at least partially overlap.

Abstract: A thermal cutter for cutting with heat a board mounted upon a table having an internal space includes a plurality of walls and a sound absorbent material. The walls are disposed in the internal space of the table to partition a plurality of exhaust chambers with each of the exhaust chambers having an aperture that opens towards a side on which the board is mounted. The sound absorbent material is provided to at least a portion of at least one of the walls, the sound absorbent material being removably coupled to the table.

Abstract: Apparatus and methods for handling workpieces in a processing system. The workpiece vertical lift mechanism (200), which is disposed inside a process chamber (40) of the processing system, is adapted to transfer a workpiece (55) to and from a pedestal portion (286) of an electrode (24). The pedestal portion (286) is configured to support the workpiece (55) during processing. The workpiece vertical lift mechanism (200) including a workpiece fixture (290) movable relative to the pedestal portion (286) between a first position in which the workpiece fixture (290) holds the workpiece (55) in a non-contacting relationship with the pedestal portion (286) and a second position in which the pedestal portion (286) projects above workpiece fixture (290) so as to transfer the workpiece (55) from the workpiece fixture (290) to the pedestal portion (286).

Abstract: The meat cutting cabinet provides an apparatus for automatically cutting and slicing meat using laser beams. The cabinet includes a motor disposed in the interior top thereof. The motor is connected to a winch or spool that pays out or reels in a steel cable. A steel hanger adapted for holding meat is suspended from the steel cable. Interior sidewalls of the cabinet have elongate standards extending from the upper portion to a lower portion proximate the cutting area of the cabinet. The steel hanger is slidably attached to the elongate members via channels formed in the standards. A laser carrier is disposed along an interior periphery of the cabinet and holds laser heads that can move via translation inside the carrier. This laser arrangement forms the cutting area through which the suspended meat can travel under control of a control panel connected to the spool motor.

Abstract: This disclosure relates to a thermal spray coating system including a table that is configured to support a component. A spray torch is configured to direct a thermal spray at a component surface. A cooling device is arranged adjacent to spray torch and configured to be in close proximity to the component surface. The cooling device includes a manifold that is connected to an air supply. The manifold has a face with multiple impingement holes less than one-eighth inch (3.1 mm) in diameter that are configured to direct cooling air on the component surface. In one example, the diameter of the impingement holes is approximately 0.059 inch (1.5 mm) and provide cooling air at a velocity of at least 400 ft per second (122 meters per second). The face is arranged within one inch (25 mm) of the component surface, in one example. Accordingly, the above cooling device uses less air and yields more consistent results in thermal coating of the component.

Abstract: A mounting table includes an electrostatic chuck, a base, and a cylindrical sleeve. The electrostatic chuck has a top surface to be exposed to plasma and a bottom surface opposite to the top surface, and a first through-hole is formed through the electrostatic chuck. The base is bonded to the bottom surface of the electrostatic chuck by a first adhesive, and a second through-hole is formed through the base. The second through-hole communicates with the first through-hole and has a diameter larger than a diameter of the first through-hole. The sleeve is bonded to the bottom surface of the electrostatic chuck by a second adhesive while communicating with the first through-hole.

Abstract: A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

Abstract: A method of welding panels overlapping each other includes a one-directional clamping step that performs one-directional clamping by positioning electrodes of a pair of one-directional spot welding guns with respect to an upper panel and a lower panel overlapping each other, a pressure welding step that forms a plurality of pressure welding portions in a zero gap status by pressure-welding the upper panel to the lower panel in a temporary welding status, by pressing and supplying electricity to the upper panel with the electrodes of the one-directional spot welding guns, plasma spot step that forms a molten portion between the pressure welding portions by performing plasma welding on the pressure welding portions with a plasma welding machine, and a cooling step that forms a welded portion by overlapping the pressure welding portions and the molten portion between the upper panel and the lower panel by cooling the molten portion.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.

Abstract: An optical fiber fusion splicer includes a base having a fiber groove for containing an optical fiber, a fiber clamp for pressing the optical fiber contained in the fiber groove against the base and load changing means for changing a load for the fiber clamp to press the optical fiber.

Abstract: A method and an apparatus for treating return ores using plasma, capable of treating sintered return ores generated in a sintering process in a steel maker or return ores (iron ores) employed in other ironmaking process such as FINEX. The method of treating return ores using plasma includes: providing return ores sorted out by a sorting process; and bonding the return ores by fusing and agglomerating the return ores using plasma. Also, an apparatus for treating return ores using plasma includes a plasma heating device used to fuse and agglomerate sorted return ores. The return ores of a predetermined grain size are fusion-bonded and agglomerated using a flame of a plasma heating device. Particularly, the return ores can be treated in a massive amount to enhance productivity of a fusion-bonding process of the return ores. Furthermore, a great amount of sintered return ores generated in the sintering process can be subjected to a fewer number of re-treatment processes.

Abstract: A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.

Abstract: Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more. A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A multi-chamber heat treatment device (S1) includes a plurality of treatment chambers having a heat treatment chamber, the device including: a cooling chamber (3) serving as the heat treatment chamber configured to cool a treatment target by latent heat of liquid particles; treatment chambers (1, 2) different from the cooling chamber (3); and drying devices (11, 19) configured to dry the cooling chamber (3).

Abstract: A fence system capable of serving as a guide rail assembly for a cutting tool is provided. The system comprises a main beam with integrated or removable guide inserts interlocked by mechanical means that provide a spacing system for various handheld plasma torches. The inserts are customizable to fit the profile of various torch bodies and provide a precise preset gap for optimized cutting. The main beam can also incorporate storage of consumable parts for the torch as well as additional guide inserts.

Abstract: A mechanism for adjusting an orientation of an electrode in a plasma processing chamber is disclosed. The plasma processing chamber may be utilized to process at least a substrate, which may be inserted into the plasma processing chamber in an insertion direction. The mechanism may include a support plate disposed outside a chamber wall of the plasma processing chamber and pivoted relative to the chamber wall. The support plate may have a first thread. The mechanism may also include an adjustment screw having a second thread that engages the first thread. Turning the adjustment screw may cause translation of a portion of the support plate relative to the adjustment screw. The translation of the portion of the support plate may cause rotation of the support plate relative to the chamber wall, thereby rotating the electrode with respect to an axis that is orthogonal to the insertion direction.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: A pipe processing apparatus containing a gripping mechanism with bracing rollers, further a drive wheel which is rotationally supported on the pipe processing apparatus and axially parallel to the bracing rollers and is positioned/positionable by its tread at such a site where said tread can make contact with the pipe held by the bracing rollers and can rotate said pipe by static friction; and a drive system to actuate the drive wheel.

Abstract: Apparatus and methods for handling workpieces in a processing system. The workpiece vertical lift mechanism (200), which is disposed inside a process chamber (40) of the processing system, is adapted to transfer a workpiece (55) to and from a pedestal portion (286) of an electrode (24). The pedestal portion (286) is configured to support the workpiece (55) during processing. The workpiece vertical lift mechanism (200) including a workpiece fixture (290) movable relative to the pedestal portion (286) between a first position in which the workpiece fixture (290) holds the workpiece (55) in a non-contacting relationship with the pedestal portion (286) and a second position in which the pedestal portion (286) projects above workpiece fixture (290) so as to transfer the workpiece (55) from the workpiece fixture (290) to the pedestal portion (286).

Abstract: A plasma torch rotation assembly for relieving stress on a lead. The rotation assembly can include an outer housing, which can have a mounting surface adapted to be fixedly coupled to a torch mount. The rotation assembly can include an inner component disposed at least partially within the outer housing, and a bearing structure disposed between the outer housing and the inner component. The bearing structure can facilitate rotational movement of the outer housing relative to the inner component, about a longitudinal axis of the rotation assembly. The rotation assembly can include a torch adapter disposed near a first end of the inner component. The torch adapter can be adapted to mate with a plasma arc torch. The rotation assembly can include a receiving portion disposed at a second end of the inner component, the receiving portion adapted to receive at least a portion a lead.

Abstract: A mechanism for adjusting an orientation of an electrode in a plasma processing chamber is disclosed. The plasma processing chamber may be utilized to process at least a substrate, which may be inserted into the plasma processing chamber in an insertion direction. The mechanism may include a support plate disposed outside a chamber wall of the plasma processing chamber and pivoted relative to the chamber wall. The support plate may have a first thread. The mechanism may also include an adjustment screw having a second thread that engages the first thread. Turning the adjustment screw may cause translation of a portion of the support plate relative to the adjustment screw. The translation of the portion of the support plate may cause rotation of the support plate relative to the chamber wall, thereby rotating the electrode with respect to an axis that is orthogonal to the insertion direction.

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: In the present invention, a plurality of suction ports are provided in a heating plate of a heat processing apparatus. The suction ports are provided at a central portion, an intermediate portion, and a peripheral portion of a substrate mounting surface of the heating plate, respectively. The warped state of the substrate before heat-processed is measured, so that when the substrate warps protruding downward, the suction start timing via a suction port corresponding to the outer peripheral portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports, and when the substrate warps protruding upward, the suction start timing via the suction port corresponding to the central portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports.

Abstract: Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.

Abstract: Embodiments of the invention include a load lock chamber having a decoupled slit valve door seal compartment. In one embodiment, a load lock chamber includes a main assembly, a first slit valve door seal compartment and a seal assembly. The main assembly has a substrate transfer cavity formed therein. Two substrate access ports are formed through the main assembly and fluidly couple to the cavity. The first slit valve door seal compartment has an aperture disposed adjacent to and aligned with one of the access ports. The first slit valve door seal compartment is decoupled from the main assembly. The seal assembly couples the first slit valve door seal compartment to the main assembly.

Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

Abstract: A torch spacing apparatus for a plasma or flame cutting machine includes a gantry that is guided to travel in an X axis. Mounted to the gantry is at least one carriage that is/are guided to travel in a Y axis. Mounted to each carriage are selected tooling having at least two cutting torches mounted thereon with an active cutting tool in an active cutting position. The carriage is mounted to enable tooling substitution whereby the torch spacing apparatus includes a substitution mechanism which is operatively attached to the carriage and tooling such that the said substitution mechanism is adapted to allow the position of a cutting torch or active cutting torch to be substituted with another cutting torch currently in the active position to space the torches accordingly by rotating the cutting tools about a Z axis.

Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

Abstract: A plasma treatment apparatus that can perform an excellent plasma treatment on a portion of a work which is to be used for producing products or parts, while preventing undesirable occurrence of discharge at that portion reliably is provided. The plasma treatment apparatus performs a plasma treatment on a plate-shaped work having an usable region to be used for producing products or parts and an unusable region other than the usable region.

Abstract: A disclosed heating apparatus for heating a substrate on which a film is coated includes a process chamber having a gas supply opening for supplying a first gas to the process chamber and a gas evacuation opening for evacuating the first gas from the process chamber; a heating plate that is arranged in the process chamber and includes a heating element for heating the substrate; plural protrusions arranged on the heating plate so as to support the substrate; plural suction holes formed in the heating plate so as to attract by suction the substrate toward the heating plate; and a gas inlet adapted to supply a second gas to a gap between the heating plate and the substrate supported by the plural protrusions.

Abstract: A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support.

Abstract: A remote plasma source comprises a first plate-like electrode (7s) and a second plate-like electrode (7b) which are arranged in parallelism and mutually electrically DC isolated. The two electrodes (7s, 7b) are operationally connected to an Rf generator (11). The first electrode (7s) has a surface which is freely exposed to a substrate holder (3) and has a pattern of through-openings (19) distributed along its surface extent.

Abstract: A heating device for an optical fiber may include a crucible body having an optical fiber receiving slotted passageway therein for receiving the optical fiber therein, and a heating element receiving passageway therein adjacent the optical fiber receiving slotted passageway and spaced apart therefrom. The heating device may further include a respective electrically powered plasma heating element enclosed within the heating element receiving passageway for heating the optical fiber within the optical fiber receiving slotted passageway.

Abstract: Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Abstract: A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table disposed in the processing chamber; and a heating electrode disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil having a first path and a second coil having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.

Abstract: The invention relates to a method for exposing an integrated circuit by ablating the polymer coating initially covering the integrated circuit, characterised in that it comprises the combined application of a laser radiation and a plasma onto the coating initially covering the integrated circuit.

Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A chuck table for use in a laser beam processing machine, having a workpiece holding area for holding a workpiece, wherein the workpiece holding area is similar in shape to the workpiece and smaller in size than the workpiece, and a buffer groove is formed in such a manner that it surrounds the workpiece holding area.

Abstract: A clamping assembly for clamping a product to allow drilling and/or cutting of the product by a drilling or cutting assembly, the clamping assembly including control means, activation means, moving means and clamp foot means being operatively connected whereby the control means controls the activation means to control the torque and distance moved on the activation means and moving means such that any movement of the drilling or cutting or clamp assembly relative to each other can be controlled such that the depth of and timing of drilling or cutting and or clamping by the drilling or cutting or clamping assembly can be adjusted accordingly such that if the product being clamped by the clamp foot means is moved during any additional forces that occur during drilling or cutting, then the control means can compensate and ensure the drilling or cutting depth is maintained.

Abstract: A cutting apparatus (1) includes a base (5) having upwardly extending first and second ends (10, 15) between which spaced elongate sides extend (20, 25). The ends and sides (10, 15, 20, 25) being located in a plane. The plane being inclined by an acute angle to a vertical plane. A cutting device (35) is provided to cut sheet material supported on the base (5). The device (1) is mounted on and moveable relative to the sides and ends (10, 15, 21, 25). Means (30) urges the cutting device (35) to desired locations relative to the base (5) thereby enabling the device (1) to cut the sheet material at desired locations.

Abstract: An ablative plasma gun subassembly is disclosed. The subassembly includes a body, a first pair and a second pair of gun electrodes having distal ends disposed within an interior of the body, and ablative material disposed proximate the distal ends of at least one of the first pair of gun electrodes and the second pair of gun electrodes.

Abstract: A plasma processing apparatus includes a chamber configured to accommodate a target substrate; a plasma generation mechanism configured to generate plasma inside the chamber; a process gas supply mechanism configured to supply a process gas into the chamber; an exhaust mechanism connected to the chamber to exhaust gas from inside the chamber; a table configured to place the target substrate thereon inside the chamber, the table including a table main body and a heating element disposed in the main body to heat the substrate; a support portion that supports the substrate table; a fixing member that fixes the support portion to the chamber; and an electrode configured to supply a power to the heating element, wherein the heating element and the electrode are made of an SiC-containing material, the electrode is fixed to the fixing member, extends through the support portion, and is connected to the heating element at a distal end, and an electrode sheath member made of a quartz-containing insulative material env

Abstract: A plasma reactor is provided having multiple frequency control of etch parameters. The reactor includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, and an inductively coupled source power applicator and a capacitively coupled plasma source power applicator. An array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors are coupled to the output ends of the optical fibers. The reactor further includes a controller responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.